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1. 发明申请

WO2011109146A3 SEMICONDUCTOR-METAL-ON-INSULATOR STRUCTURES, METHODS OF FORMING SUCH STRUCTURES, AND SEMICONDUCTOR DEVICES INCLUDING SUCH STRUCTURES 审中-公开
公开(公告)号：WO2011109146A3
公开(公告)日：2011-09-09
申请号：PCT/US2011/024354
申请日：2011-02-10
申请人： MICRON TECHNOLOGY, INC. , TANG, Sanh, D. , ZHANG, Ming , BAYLESS, Andrew, M. , ZAHURAK, John, K.
发明人： TANG, Sanh, D. , ZHANG, Ming , BAYLESS, Andrew, M. , ZAHURAK, John, K.
IPC分类号： H01L27/12 , H01L21/20 , H01L27/115 , H01L21/8247
摘要： Methods for fabricating semiconductor-metal-on-insulator (SMOI) structures include forming an acceptor wafer including an insulator material on a first semiconductor substrate, forming a donor wafer including a conductive material and an amorphous silicon material on a second semiconductor substrate, and bonding the amorphous silicon material of the donor wafer to the insulator material of the acceptor wafer. SMOI structures formed from such methods are also disclosed, as are semiconductor devices including such SMOI structures.

2. 发明申请

WO2010129137A2 METHODS OF FORMING A PLURALITY OF CONDUCTIVE LINES IN THE FABRICATION OF INTEGRATED CIRCUITRY, METHODS OF FORMING AN ARRAY OF CONDUCTIVE LINES, AND INTEGRATED CIRCUITRY 审中-公开
标题翻译：在集成电路制造中形成多个导体线的方法，形成导电线阵列的方法和集成电路
公开(公告)号：WO2010129137A2
公开(公告)日：2010-11-11
申请号：PCT/US2010/030583
申请日：2010-04-09
申请人： MICRON TECHNOLOGY, INC. , TANG, Sanh, D. , ZHANG, Ming
发明人： TANG, Sanh, D. , ZHANG, Ming
IPC分类号： H01L21/8239
CPC分类号： H01L21/76877 , H01L21/7682 , H01L21/76838 , H01L21/76883 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a pair of conductive lines in the fabrication of integrated circuitry includes forming a trench into a damascene material received over a substrate. Conductive material is deposited over the damascene material and to within the trench to overfill the trench. The conductive material is removed back at least to the damascene material to leave at least some of the conductive material remaining in the trench. Etching is conducted longitudinally through the conductive material within the trench to form first and second conductive lines within the trench which are mirror images of one another in lateral cross section along at least a majority of length of the first and second conductive lines. Other implementations are contemplated.
摘要翻译：在集成电路的制造中形成一对导线的方法包括将沟槽形成在基板上容纳的镶嵌材料中。导电材料沉积在镶嵌材料上并且在沟槽内沉积以覆盖沟槽。导电材料至少被去除到镶嵌材料，以留下留在沟槽中的至少一些导电材料。蚀刻通过沟槽内的导电材料纵向导电，以在沟槽内形成第一和第二导电线，该沟槽中的第一和第二导电线沿着第一和第二导电线的至少大部分长度在横截面上相互镜像。考虑其他实现。

3. 发明申请

WO2010030484A2 METHODS UTILIZING MICROWAVE RADIATION DURING FORMATION OF SEMICONDUCTOR CONSTRUCTIONS 审中-公开
标题翻译：利用微波辐射形成半导体结构的方法
公开(公告)号：WO2010030484A2
公开(公告)日：2010-03-18
申请号：PCT/US2009/054475
申请日：2009-08-20
申请人： MICRON TECHNOLOGY, INC. , SMYTHE, John , SRINIVASAN, Bhaskar , ZHANG, Ming
发明人： SMYTHE, John , SRINIVASAN, Bhaskar , ZHANG, Ming
IPC分类号： H01L21/265
CPC分类号： H01L29/66136 , H01L21/26513 , H01L21/268 , H01L21/324 , H01L21/823425 , H01L21/823814 , H01L27/10873 , H01L27/24 , H01L29/665 , H01L29/6659
摘要： Some embodiments include methods in which microwave radiation is used to activate dopant and/or increase crystallinity of semiconductor material during formation of a semiconductor construction. In some embodiments, the microwave radiation has a frequency of about 5.8 gigahertz, and a temperature of the semiconductor construction does not exceed about 500°C during the exposure to the microwave radiation.
摘要翻译：某些实施例包括在形成半导体构造期间使用微波辐射激活掺杂剂和/或增加半导体材料的结晶度的方法。在一些实施例中，微波辐射具有大约5.8千兆赫的频率，并且在暴露于微波辐射期间半导体构造的温度不超过大约500℃。

4. 发明申请

WO2010101691A2 METHODS OF FORMING PATTERNS 审中-公开
标题翻译：形成图案的方法
公开(公告)号：WO2010101691A2
公开(公告)日：2010-09-10
申请号：PCT/US2010/023209
申请日：2010-02-04
申请人： MICRON TECHNOLOGY, INC. , SILLS, Scott , SANDHU, Gurtej, S. , SMYTHE, John , ZHANG, Ming
发明人： SILLS, Scott , SANDHU, Gurtej, S. , SMYTHE, John , ZHANG, Ming
IPC分类号： H01L21/027 , G03F7/00
CPC分类号： H01L21/0274 , G03F7/20 , G03F7/40 , H01L21/0337 , H01L21/0338
摘要： Some embodiments include methods of forming patterns of openings. The methods may include forming spaced features over a substrate. The features may have tops and may have sidewalls extending downwardly from the tops. A first material may be formed along the tops and sidewalls of the features. The first material may be formed by spin-casting a conformal layer of the first material across the features, or by selective deposition along the features relative to the substrate. After the first material is formed, fill material may be provided between the features while leaving regions of the first material exposed. The exposed regions of the first material may then be selectively removed relative to both the fill material and the features to create the pattern of openings.
摘要翻译：一些实施例包括形成开口图案的方法。所述方法可以包括在衬底上形成间隔的特征。特征可以具有顶部并且可以具有从顶部向下延伸的侧壁。第一材料可以沿着特征的顶部和侧壁形成。第一材料可以通过将特征上的第一材料的共形层旋转浇铸而形成，或通过相对于基底的特征的选择性沉积来形成。在形成第一材料之后，可以在特征之间提供填充材料，同时使第一材料的区域暴露。然后可以相对于填充材料和特征来选择性地去除第一材料的暴露区域以产生开口图案。

5. 发明申请

WO2013052236A1 METHODS OF PROCESSING UNITS COMPRISING CRYSTALLINE MATERIALS, AND METHODS OF FORMING SEMICONDUCTOR-ON INSULATOR CONSTRUCTIONS 审中-公开
标题翻译：包含结晶材料的加工单元的方法和形成半导体绝缘体构造的方法
公开(公告)号：WO2013052236A1
公开(公告)日：2013-04-11
申请号：PCT/US2012/054235
申请日：2012-09-07
申请人： MICRON TECHNOLOGY, INC. , QIN, Shu , ZHANG, Ming
发明人： QIN, Shu , ZHANG, Ming
IPC分类号： H01L27/12 , H01L21/20
CPC分类号： H01L21/68735 , H01L21/6831 , H01L21/76254
摘要： Some embodiments include methods of processing a unit containing crystalline material. A damage region may be formed within the crystalline material, and a portion of the unit may be above the damage region. A chuck may be used to bend the unit and thereby induce cleavage along the damage region to form a structure from the portion of the unit above the damage region. Some embodiments include methods of forming semiconductor-on-insulator constructions. A unit may be formed to have dielectric material over monocrystalline semiconductor material. A damage region may be formed within the monocrystalline semiconductor material, and a portion of the monocrystalline semiconductor material may be between the damage region and the dielectric material. The unit may be incorporated into an assembly with a handle component, and a chuck may be used to contort the assembly and thereby induce cleavage along the damage region.
摘要翻译：一些实施方案包括处理含有结晶材料的单元的方法。可以在结晶材料内形成损伤区域，并且该单元的一部分可能在损伤区域之上。可以使用卡盘来弯曲单元，从而沿着损伤区域引起切割，以从损伤区域上方的单元部分形成结构。一些实施例包括形成绝缘体上半导体结构的方法。单元可以形成为具有超过单晶半导体材料的电介质材料。可以在单晶半导体材料内形成损伤区域，并且单晶半导体材料的一部分可以在损伤区域和电介质材料之间。该单元可以结合到具有把手部件的组件中，并且卡盘可以用于扭曲组件，从而引起沿着损伤区域的切割。

6. 发明申请

WO2015119798A1 DEVICES, SYSTEMS AND METHODS FOR ELECTROSTATIC FORCE ENHANCED SEMICONDUCTOR BONDING 审中-公开
标题翻译：静电强化半导体结合装置，系统及方法
公开(公告)号：WO2015119798A1
公开(公告)日：2015-08-13
申请号：PCT/US2015/012833
申请日：2015-01-26
申请人： MICRON TECHNOLOGY, INC.
发明人： QIN, Shu , ZHANG, Ming
IPC分类号： H01L21/58 , H01L21/683
CPC分类号： H01L21/6833 , H01L21/76251
摘要： Various embodiments of microelectronic devices and methods of manufacturing are described herein. In one embodiment, a method for enhancing wafer bonding includes positioning a substrate assembly on a unipolar electrostatic chuck in direct contact with an electrode, electrically coupling a conductor to a second substrate positioned on top of the first substrate, and applying a voltage to the electrode, thereby creating a potential differential between the first substrate and the second substrate that generates an electrostatic force between the first and second substrates.
摘要翻译：本文描述了微电子器件和制造方法的各种实施例。在一个实施例中，一种用于增强晶片接合的方法包括将基板组件定位在与电极直接接触的单极静电卡盘上，将导体电耦合到位于第一基板顶部的第二基板，以及向电极施加电压从而在第一基板和第二基板之间产生在第一和第二基板之间产生静电力的电位差。

7. 发明申请

WO2023019767A1 DIMM COOLING ASSEMBLIES 审中-公开
公开(公告)号：WO2023019767A1
公开(公告)日：2023-02-23
申请号：PCT/CN2021/130052
申请日：2021-11-11
申请人： INTEL CORPORATION , ZHANG, Ming , FAN, Yuehong , WEI, Peng , WANG, Chuanlou , MONGIA, Rajiv , ZHANG, Guocheng , BU, Yingqiong , WONDIMU, Berhanu , TAN, Guixiang , QUE, Xiang , JIANG, Qing , YU, Liu , CHU, Wei-Ming , ZHANG, Chen , ZHOU, Hao , QI, Feng , BIBER, Catharina , KULKARNI, Devdatta P. , LI, Xiang , ZHANG, Yechi
发明人： ZHANG, Ming , FAN, Yuehong , WEI, Peng , WANG, Chuanlou , MONGIA, Rajiv , ZHANG, Guocheng , BU, Yingqiong , WONDIMU, Berhanu , TAN, Guixiang , QUE, Xiang , JIANG, Qing , YU, Liu , CHU, Wei-Ming , ZHANG, Chen , ZHOU, Hao , QI, Feng , BIBER, Catharina , KULKARNI, Devdatta P. , LI, Xiang , ZHANG, Yechi
IPC分类号： H05K7/20
摘要： Heat pipes and vapor chambers that are components of a DIMM cooling assembly are described.

8. 发明申请

WO2016057854A1 SYSTEMS AND METHODS FOR COOLING ELECTRICAL EQUIPMENT 审中-公开
标题翻译：冷却电气设备的系统和方法
公开(公告)号：WO2016057854A1
公开(公告)日：2016-04-14
申请号：PCT/US2015/054789
申请日：2015-10-08
申请人： INERTECH IP LLC , ZHANG, Ming , COSTAKIS, John
发明人： ZHANG, Ming , COSTAKIS, John
IPC分类号： F25B1/00 , F24F11/02
CPC分类号： F25B7/00 , F25B25/005 , F25B41/04 , F25B49/02 , F25B2500/18 , H05K7/20827
摘要： The cooling systems of the present disclosure include a first refrigerant circuit in thermal communication with a heat load and in fluid communication with a main condenser, a free cooling circuit in fluid communication with the main condenser and a free-cooled water source, a chilled water circuit in fluid communication with the main condenser and an evaporator, and a second refrigerant circuit in fluid communication with the evaporator and a secondary condenser. The free cooling circuit is in thermal communication with the first refrigerant circuit via the main condenser, the chilled water circuit is in thermal communication with the first refrigerant circuit via the main condenser, and the second refrigeration circuit is in thermal communication with the chilled water circuit and the free cooling circuit. The second refrigeration circuit cools a fluid flowing in the chilled water circuit. Methods of operating a cooling system are also disclosed.
摘要翻译：本公开的冷却系统包括与热负荷热连通并与主冷凝器流体连通的第一制冷剂回路，与主冷凝器流体连通的自由冷却回路和自由冷却水源，冷却水与主冷凝器和蒸发器流体连通的电路，以及与蒸发器和次级冷凝器流体连通的第二制冷剂回路。自由冷却回路通过主冷凝器与第一制冷剂回路热连通，冷水循环通过主冷凝器与第一制冷剂回路热连通，第二制冷回路与冷水回路和自由冷却电路。第二制冷回路冷却在冷水循环中流动的流体。还公开了操作冷却系统的方法。

9. 发明申请

WO2014153773A1 ELECTRONIC DEVICE HAVING A DETACHABLE TABLET 审中-公开
标题翻译：具有可拆卸片剂的电子设备
公开(公告)号：WO2014153773A1
公开(公告)日：2014-10-02
申请号：PCT/CN2013/073448
申请日：2013-03-29
申请人： INTEL CORPORATION , ZHANG, Ming , CROCKER, Michael T. , SHENG, Xiaofeng Shawn , TATE, Alan W. , DENG, Shanjun , KANE, Kapil , WANG, Minglei , BEAUREGARD, Russell
发明人： ZHANG, Ming , CROCKER, Michael T. , SHENG, Xiaofeng Shawn , TATE, Alan W. , DENG, Shanjun , KANE, Kapil , WANG, Minglei , BEAUREGARD, Russell
IPC分类号： G06F1/16
CPC分类号： G06F1/1656 , G06F1/1626 , G06F1/1632 , G06F1/1643 , G06F1/1654 , H01R31/00
摘要： An electronic device may be provided that includes a base portion having an input device, a tablet having a display and a docking connector with a plurality of second electrical connectors, and a docking connector to move relative to the base portion. The docking connector may include a first docking pole to extend from the docking connector and to engage with the docking receptacle, and a plurality of first electrical connectors.
摘要翻译：可以提供电子设备，其包括具有输入设备的基座部分，具有显示器的平板电脑和具有多个第二电连接器的对接连接器以及相对于基座部分移动的对接连接器。对接连接器可以包括从对接连接器延伸并与对接插座接合的第一对接极和多个第一电连接器。

10. 发明申请

WO2013176667A2 MASPIN-BASED TREATMENT AND PREVENTION OF CANCER 审中-公开
标题翻译：基于MASPIN的治疗和预防癌症
公开(公告)号：WO2013176667A2
公开(公告)日：2013-11-28
申请号：PCT/US2012/039165
申请日：2012-05-23
申请人： NORTHWESTERN UNIVERSITY , ZHANG, Ming
发明人： ZHANG, Ming
IPC分类号： A61K38/57
CPC分类号： A61K38/57
摘要： The present invention provides compositions and methods for the treatment of prevention of cancer through enhanced cell adhesion. In particular the present invention provides maspin-related peptides, and methods or use thereof, for the promotion of cell adhesion.
摘要翻译：本发明提供了通过增强细胞粘附来治疗预防癌症的组合物和方法。特别地，本发明提供了maspin相关肽及其方法或用途，用于促进细胞粘附。

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