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    • 6. 发明申请
    • METHODS FOR THE SYNTHESIS OF FUNCTIONALIZABLE POLY(ETHYLENE OXIDE) STAR MACROMOLECULES
    • 功能性聚(乙氧基)星形分子的合成方法
    • WO1998018494A1
    • 1998-05-07
    • PCT/US1997019257
    • 1997-10-27
    • MASSACHUSETTS INSTITUTE OF TECHNOLOGY
    • MASSACHUSETTS INSTITUTE OF TECHNOLOGYMERRILL, Edward, W.YEN, Diane, RintzlerSAGAR, Ambuj
    • A61K47/48
    • B82Y5/00A61K47/6949C08G65/329C08G81/025C08G83/003
    • Methods are provided for the synthesis of poly(ethylene oxide) ("PEO") star macromolecules including functionalizable groups. In one embodiment, a core molecule including a plurality of dendritic branches or having a comb structure, and including a plurality of accessible reactive groups is reacted with functionalizable poly(ethylene oxide) ("PEO") molecules. The functionalizable poly(ethylene oxide) molecules include a reactive group capable of reacting with the reactive group on the core molecule, and a functionalizable group capable of being chemically modified, which optionally is protected. In the reaction, the PEO molecules are covalently attached to the core molecule, to form a PEO star macromolecule with terminal functionalizable groups. Preferably, the functionalizable PEO is a heterofunctional linear PEO which includes the reactive group at one terminus and the functionalizable group at the other terminus. The functionalizable groups on the PEO molecules then may be deprotected if necessary, and the further derivatized, for example, by the attachment of a biologically active molecule or polymer thereof.
    • 提供了用于合成包含可官能化基团的聚(环氧乙烷)(“PEO”)星型大分子的方法。 在一个实施方案中,包含多个树枝状枝或具有梳结构并且包括多个可接触的反应性基团的核心分子与可官能化的聚(环氧乙烷)(“PEO”)分子反应。 可官能化的聚(环氧乙烷)分子包括能够与芯分子上的反应性基团反应的反应性基团和能够被化学改性的可官能化基团,其任选被保护。 在反应中,PEO分子共价连接到核心分子上,形成具有末端官能团的PEO星型大分子。 优选地,可官能化PEO是异功能线性PEO,其包括一个末端的反应性基团和另一个末端的可官能化基团。 如果需要,PEO分子上的可官能化基团可以被去保护,并且例如通过附着生物活性分子或其聚合物进一步衍生化。
    • 8. 发明申请
    • CHARGE MODULATION DEVICE
    • 充电调制装置
    • WO1998009334A1
    • 1998-03-05
    • PCT/US1997014638
    • 1997-08-20
    • MASSACHUSETTS INSTITUTE OF TECHNOLOGY
    • MASSACHUSETTS INSTITUTE OF TECHNOLOGYREICH, Robert, K.SAVOYE, Eugene, D.KOSICKI, Bernard, B.
    • H01L27/148
    • H01L29/76833H01L27/1464H01L31/1126
    • A charge modulation device having a semiconductor region of a first conductivity type. An epitaxial layer of second conductivity type is provided on a portion of the semiconductor region so as to define an FET channel region. A first epitaxial region of the second conductivity type is provided adjacent to and in contact with the epitaxial layer so as to define an FET drain region, the first epitaxial region being electrically isolated from the semiconductor region. A second epitaxial region of the second conductivity type is provided adjacent to and in contact with the epitaxial layer so as to define an FET source region, the second epitaxial region being electrically isolated from the semiconductor region. A third epitaxial region of the first conductivity type or a metal oxide semiconductor is provided to the channel region between the source and drain regions.
    • 一种具有第一导电类型的半导体区域的电荷调制装置。 在半导体区域的一部分上设置第二导电类型的外延层,以限定FET沟道区。 第二导电类型的第一外延区域设置成与外延层相邻并与外延层接触,以便限定FET漏区,该第一外延区域与半导体区域电绝缘。 第二导电类型的第二外延区域被设置为与外延层相邻并与外延层接触,以限定FET源极区域,第二外延区域与半导体区域电隔离。 第一导电类型的第三外延区域或金属氧化物半导体被提供给源区和漏区之间的沟道区。