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2. 发明申请

WO2017006278A1 OPTICAL SENSOR WITH NARROW ANGULAR RESPONSE 审中-公开
标题翻译：具有NARROW ANGULAR反应的光学传感器
公开(公告)号：WO2017006278A1
公开(公告)日：2017-01-12
申请号：PCT/IB2016/054083
申请日：2016-07-07
申请人： LFOUNDRY S.R.L.
发明人： SPAZIANI, Fabio , DEL MONTE, Andrea , MARGUTTI, Giovanni , DE AMICIS, Giovanni
IPC分类号： H01L27/146
CPC分类号： A61B5/0059 , A61B5/6801 , A61B2562/0238 , A61B2562/185 , H01L27/14603 , H01L27/14623 , H01L27/14625 , H01L27/14643
摘要： The present invention relates to an optical sensor based on CMOS technology and comprising: a semiconductor substrate (21,31); an array of photocells (2,3), each of which includes a respective photodetector active area (11,12,22,32) that is formed in the semiconductor substrate (21,31) and is exposed on a given planar surface (13) of said semiconductor substrate (21,31), each photocell (2,3) being designed to provide a respective output electrical signal related to incident light impinging on the respective photodetector active area (11,12,22,32); a multilayer structure (23,33), that includes metal and dielectric layers and is formed on the given planar surface (13) of the semiconductor substrate (21,31); and light shielding means (14,15,24,35), that are formed in or on the multilayer structure (23,33) and are made of one or more materials reflecting and/or absorbing incident light impinging on said light shielding means (14,15,24,35); wherein each photodetector active area (11,12,22,32) is associated with a corresponding optical path (26,36) extending through the light shielding means (14,15,24,35) and directed towards said photodetector active area (11,12,22,32) to allow incident light with incident direction falling within a given direction range to reach said photodetector active area (11,12,22,32). The optical sensor is characterized in that: all the photocells (2,3) are connected in parallel to provide an overall output electrical signal related to incident light impinging on all the photodetector active areas (11,12,22,32); and all the optical paths (26,36) are parallel to a given direction thereby causing all the photodetector active areas (11,12,22,32) to be reached by incident light with incident direction parallel to said given direction.
摘要翻译：本发明涉及一种基于CMOS技术的光学传感器，包括：半导体衬底（21,31）; 一组光电管（2,3），每个光电管（2,3）包括形成在半导体衬底（21,31）中并暴露在给定平面（13）上的相应光电检测器有源区（11,12,22,32）），每个光电池（2,3）被设计成提供与入射光相关的相应输出电信号，该入射光照射在相应的光电检测器有效区（11,12,22,32）上; 形成在所述半导体衬底（21,31）的给定平面（13）上的多层结构（23,33），其包括金属和电介质层。以及形成在多层结构（23,33）中或上的多个遮光装置（14,15,24,35），并且由反射和/或吸收入射到所述遮光装置上的入射光的一种或多种材料制成 14,15,24,35）; 其中每个光电检测器有效区域（11,12,22,32）与延伸穿过所述光屏蔽装置（14,15,24,35）并指向所述光电检测器有效区域（11）的对应光路（26,36）相关联，12,22,32）以允许具有入射方向落入给定方向范围的入射光到达所述光电检测器有效区（11,12,22,32）。光学传感器的特征在于：所有光电池（2,3）并联连接以提供与入射光相关的总体输出电信号，该入射光照射在所有光电检测器有效区域（11,12,22,32）上; 并且所有的光路（26,36）平行于给定的方向，从而使入射方向平行于所述给定方向的入射光到达所有的光检测器有效面积（11,12,22,32）。

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