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1. 发明申请

WO2004077608A2 ANTENNA FOR PRODUCING UNIFORM PROCESS RATES 审中-公开
标题翻译：用于生产统一过程速率的天线
公开(公告)号：WO2004077608A2
公开(公告)日：2004-09-10
申请号：PCT/US2004/004399
申请日：2004-02-12
申请人： LAM RESEARCH CORPORATION , WILCOXSON, Mark, H. , BAILEY, Andrew, D., III
发明人： WILCOXSON, Mark, H. , BAILEY, Andrew, D., III
IPC分类号： H01Q
CPC分类号： H01J37/32467 , H01J37/321 , H01Q1/36 , H01Q7/00
摘要： An antenna arrangement for generating an electric field inside a process chamber through a window. Generally, the antenna arrangement comprises an outer loop, comprising a first outer loop turn disposed around an antenna axis, an inner loop, comprising a first inner loop turn disposed around the antenna axis, wherein the inner loop is closer to the antenna axis than the outer loop is to the antenna axis in each azimuthal direction, and a radial connector radially electrically connecting the outer loop to the inner loop, wherein the radial connector is placed a large distance from the window.
摘要翻译：一种用于通过窗口在处理室内产生电场的天线装置。通常，天线装置包括外环，包括围绕天线轴设置的第一外环转向，内环，包括围绕天线轴设置的第一内环转，其中内环比天线轴更靠近天线轴外环是在每个方位角方向上的天线轴线，以及径向连接器将外环径向电连接到内环，其中径向连接器与窗口放置很大距离。

2. 发明申请

WO2013078098A1 MULTI ZONE GAS INJECTION UPPER ELECTRODE SYSTEM 审中-公开
标题翻译：多区域注气上电极系统
公开(公告)号：WO2013078098A1
公开(公告)日：2013-05-30
申请号：PCT/US2012/065684
申请日：2012-11-16
申请人： LAM RESEARCH CORPORATION , BISE, Ryan , DHINDSA, Rajinder , MARAKHTANOV, Alexei , LI, Lumin , NAM, Sang, Ki , ROGERS, Jim , HUDSON, Eric , DELGADINO, Gerardo , BAILEY, Andrew, D., III , KELLOGG, Mike , DE LA LIERA, Anthony , EHRLICH, Darrell
发明人： BISE, Ryan , DHINDSA, Rajinder , MARAKHTANOV, Alexei , LI, Lumin , NAM, Sang, Ki , ROGERS, Jim , HUDSON, Eric , DELGADINO, Gerardo , BAILEY, Andrew, D., III , KELLOGG, Mike , DE LA LIERA, Anthony , EHRLICH, Darrell
IPC分类号： C23F1/08
CPC分类号： H01J37/32449 , H01J37/32495 , H01J37/32541
摘要： A system and method of plasma processing includes a plasma processing system including a plasma chamber and a controller coupled to the plasma chamber. The plasma chamber including a substrate support and an upper electrode opposite the substrate support, the upper electrode having a plurality of concentric gas injection zones.
摘要翻译：等离子体处理的系统和方法包括等离子体处理系统，其包括等离子体室和耦合到等离子体室的控制器。等离子体室包括基板支撑件和与基板支撑件相对的上电极，上电极具有多个同心气体注入区域。

3. 发明申请

WO2008091667A1 CONFIGURABLE BEVEL ETCHER 审中-公开
标题翻译：可配置BEVEL ETCHER
公开(公告)号：WO2008091667A1
公开(公告)日：2008-07-31
申请号：PCT/US2008/000939
申请日：2008-01-24
申请人： LAM RESEARCH CORPORATION , BAILEY, Andrew, D., III , SCHOEPP, Alan M. , SEXTON, Gregory , KIM, Yunsang , KENNEDY, William S.
发明人： BAILEY, Andrew, D., III , SCHOEPP, Alan M. , SEXTON, Gregory , KIM, Yunsang , KENNEDY, William S.
IPC分类号： H01L21/3065
CPC分类号： H01L21/0209 , H01J37/32366 , H01J37/32568 , H01J2237/335 , H01L21/67069
摘要： A device for cleaning a bevel edge of a semiconductor substrate. The device includes: a lower support having a cylindrical top portion; a lower plasma-exclusion-zone (PEZ) ring surrounding the outer edge of the top portion and adapted to support the substrate; an upper dielectric component opposing the lower support and having a cylindrical bottom portion; an upper PEZ ring surrounding the outer edge of the bottom portion and opposing the lower PEZ ring; and at least one radiofrequency (RF) power source operative to energize process gas into plasma in an annular space defined by the upper and lower PEZ rings, wherein the annular space encloses the bevel edge.
摘要翻译：一种用于清洁半导体衬底的斜边缘的装置。该装置包括：具有圆柱形顶部的下支撑件; 围绕顶部部分的外边缘并适于支撑基底的较低等离子体排除区（PEZ）环; 与所述下支撑件相对并且具有圆柱形底部部分的上介电部件; 围绕底部的外边缘并与下部PEZ环相对的上部PEZ环; 以及至少一个射频（RF）电源，其用于在由所述上和下PEZ环限定的环形空间中将工艺气体激发成等离子体，其中所述环形空间包围所述斜面边缘。

4. 发明申请

WO2008042581A2 OFFSET CORRECTION METHODS AND ARRANGEMENT FOR POSITIONING AND INSPECTING SUBSTRATES 审中-公开
标题翻译：偏移校正方法和定位和检查基板的安排
公开(公告)号：WO2008042581A2
公开(公告)日：2008-04-10
申请号：PCT/US2007/078578
申请日：2007-09-14
申请人： LAM RESEARCH CORPORATION , CHEN, Jack , BAILEY, Andrew, D., III , MOORING, Ben , CAIN, Stephen J.
发明人： CHEN, Jack , BAILEY, Andrew, D., III , MOORING, Ben , CAIN, Stephen J.
IPC分类号： G03B15/02
CPC分类号： H01L21/681 , H01L21/67259 , H01L21/67288
摘要： A bevel inspection module for capturing images of a substrate is provided. The module includes a rotational motor, which is attached to a substrate chuck and is configured to rotate the substrate chuck thereby allowing the substrate to revolve. The module further includes a camera and an optic enclosure, which is attached to the camera and is configured to rotate, enabling light to be directed toward the substrate. The camera is mounted from a camera mount, which is configured to enable the camera to rotate on a 180 degree plane allowing the camera to capture images of at least one of a top view, a bottom view, and a side view of the substrate. The module yet also includes a backlight arrangement, which is configured to provide illumination to the substrate, thereby enabling the camera to capture the images, which shows contrast between the substrate and a background.
摘要翻译：提供了用于捕获基板的图像的斜面检查模块。该模块包括旋转马达，该旋转马达连接到衬底卡盘并且被配置为旋转衬底卡盘从而允许衬底旋转。该模块还包括照相机和光学外壳，该照相机和光学外壳连接到照相机并且被配置成旋转，使得光被引导朝向基板。照相机从照相机安装架安装，照相机安装架被配置成使照相机能够在180度平面上旋转，从而允许照相机捕获衬底的顶视图，底视图和侧视图中的至少一个的图像。该模块还包括背光装置，该背光装置被配置为向基板提供照明，由此使得该照相机能够捕获图像，该图像显示基板和背景之间的对比。

5. 发明申请

WO2009046032A1 METHOD AND APPARATUS FOR SHAPING GAS PROFILE NEAR BEVEL EDGE 审中-公开
标题翻译：用于形成近似气体剖面的方法和装置
公开(公告)号：WO2009046032A1
公开(公告)日：2009-04-09
申请号：PCT/US2008/078338
申请日：2008-09-30
申请人： LAM RESEARCH CORPORATION , CHEN, Jack , BAILEY, Andrew, D., III , SHAREEF, Iqbal
发明人： CHEN, Jack , BAILEY, Andrew, D., III , SHAREEF, Iqbal
IPC分类号： H01L21/3065
CPC分类号： H01L21/02087 , C23C16/455 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/67051 , H01L21/67069 , H01L21/6708
摘要： A method for etching a bevel edge of a substrate in a processing chamber is provided. The method includes flowing an inert gas into a center region of the processing chamber defined above a center region of the substrate and flowing a mixture of an inert gas and a processing gas over an edge region of the substrate. The method farther includes striking a plasma in the edge region, wherein the flow of the inert gas and the flow of the mixture maintain a mass fraction of the processing gas substantially constant. A processing chamber configured to clean a bevel edge of a substrate is also provided.
摘要翻译：提供了一种用于在处理室中蚀刻衬底的斜边缘的方法。该方法包括将惰性气体流入位于衬底的中心区域上方的处理室的中心区域，并使惰性气体和处理气体的混合物流过衬底的边缘区域。该方法进一步包括在边缘区域中冲击等离子体，其中惰性气体的流动和混合物的流动保持处理气体的质量分数基本上恒定。还提供了一种构造成清洁基板的斜边缘的处理室。

6. 发明申请

WO2008091668A1 BEVEL ETCHER WITH GAP CONTROL 审中-公开
标题翻译： BEVELER与GAP控制
公开(公告)号：WO2008091668A1
公开(公告)日：2008-07-31
申请号：PCT/US2008/000940
申请日：2008-01-24
申请人： LAM RESEARCH CORPORATION , BAILEY, Andrew, D., III , SCHOEPP, Alan M. , SEXTON, Gregory , KUTHI, Andras , KIM, Yunsang , KENNEDY, William S.
发明人： BAILEY, Andrew, D., III , SCHOEPP, Alan M. , SEXTON, Gregory , KUTHI, Andras , KIM, Yunsang , KENNEDY, William S.
IPC分类号： H01L21/3065
CPC分类号： H01L21/0209 , H01J37/32366 , H01J37/32568 , H01J2237/335 , H01L21/67069
摘要： A device for cleaning a bevel edge of a semiconductor substrate. The device includes a lower electrode assembly that has a top surface and is adapted to support the substrate and an upper electrode assembly that has a bottom surface opposing the top surface. The lower and upper electrode assemblies generate plasma for cleaning the bevel edge of the substrate disposed between the top and bottom surfaces during operation. The device also includes a mechanism for suspending the upper electrode assembly over the lower support and adjusting the tilt angle and horizontal translation of the bottom surface relative to the top surface.
摘要翻译：一种用于清洁半导体衬底的斜边缘的装置。该装置包括具有顶表面并适于支撑基底的下电极组件和具有与顶表面相对的底表面的上电极组件。下部和上部电极组件在操作期间产生用于清洁设置在顶部和底部表面之间的衬底的斜面边缘的等离子体。该装置还包括用于将上电极组件悬挂在下支撑件上并且调节底表面相对于顶表面的倾斜角度和水平平移的机构。

7. 发明申请

WO2004084266A2 SYSTEM, METHOD AND APPARATUS FOR IMPROVED GLOBAL DUAL-DAMASCENE PLANARIZATION 审中-公开
标题翻译：改进的全球双重平均面积的系统，方法和装置
公开(公告)号：WO2004084266A2
公开(公告)日：2004-09-30
申请号：PCT/US2004/007527
申请日：2004-03-10
申请人： LAM RESEARCH CORPORATION , LOHOKARE, Shrikant, P. , BAILEY, Andrew, D., III , HEMKER, David , COOK, Joel, M.
发明人： LOHOKARE, Shrikant, P. , BAILEY, Andrew, D., III , HEMKER, David , COOK, Joel, M.
IPC分类号： H01L
CPC分类号： H01L21/7684 , H01L21/31116 , H01L21/32115 , H01L21/32135 , H01L21/32136
摘要： A system and method for planarizing a patterned semiconductor substrate includes receiving a patterned semiconductor substrate. The patterned semiconductor substrate having a conductive interconnect material filling multiple of features in the pattern. The conductive interconnect material having an overburden portion. The overburden portion having a localized non-uniformity. A bulk portion of the overburden portion is removed to planarize the overburden portion. The substantially locally planarized overburden portion is mapped to determine a global non-uniformity. The substantially locally planarized overburden portion is etched to substantially remove the global non-uniformity.
摘要翻译：用于平坦化图案化半导体衬底的系统和方法包括接收图案化的半导体衬底。图案化半导体衬底具有填充图案中的多个特征的导电互连材料。导电互连材料具有覆盖层部分。覆盖层部分具有局部不均匀性。去除覆盖层部分的大部分以平坦化上覆层部分。映射基本上局部平坦化的覆盖层部分以确定全局不均匀性。基本上局部平坦化的覆盖层部分被蚀刻以基本上去除全局不均匀性。

8. 发明申请

WO2004030082A1 EXPERT KNOWLEDGE METHODS AND SYSTEMS FOR DATA ANALYSIS 审中-公开
标题翻译：专家知识数据分析方法与系统
公开(公告)号：WO2004030082A1
公开(公告)日：2004-04-08
申请号：PCT/US2003/030391
申请日：2003-09-26
申请人： LAM RESEARCH CORPORATION , YADAV, Puneet , BAILEY, Andrew, D., III
发明人： YADAV, Puneet , BAILEY, Andrew, D., III
IPC分类号： H01L21/66
CPC分类号： H01L22/20
摘要： A method for adjusting a data set defining a set of process runs, each process run having a set of data corresponding to a set of variables for a wafer processing operation is provided. A model derived from a data set is received (116). A new data set corresponding to one process run is received (118). The new data set is projected to the model (120). An outlier data point produced as a result of the projecting is identified (122). A variable corresponding to the one outlier data point is identified, the identified variable exhibiting a high contribution (126). A value for the variable from the new data set is identified. Whether the value for the variable is unimportant is determined (128). A normalized matrix of data is created, using random data and the variable that was determined to be unimportant from each of the new data set and the data set (132). The data set is updated with the normalized matrix of data.
摘要翻译：提供一种用于调整定义一组处理运行的数据集的方法，每个处理运行具有与用于晶片处理操作的一组变量相对应的一组数据。接收从数据集导出的模型（116）。接收对应于一个进程运行的新数据集（118）。新数据集投影到模型（120）。识别作为投影的结果产生的异常值数据点（122）。识别对应于一个异常数据点的变量，所识别的变量表现出高贡献（126）。识别来自新数据集的变量的值。确定变量的值是否不重要（128）。使用随机数据和被确定为与每个新数据集和数据集不重要的变量（132）来创建数据的归一化矩阵。数据集用数据的归一化矩阵更新。

9. 发明申请

WO2003096765A3 APPARATUS AND METHODS FOR MINIMIZING ARCING IN A PLASMA PROCESSING CHAMBER 审中-公开
公开(公告)号：WO2003096765A3
公开(公告)日：2003-11-20
申请号：PCT/US2003/013597
申请日：2003-05-01
申请人： LAM RESEARCH CORPORATION , HOWALD, Arthur, M. , KUTHI, Andras , BAILEY, Andrew, D., III , BERNEY, Butch
发明人： HOWALD, Arthur, M. , KUTHI, Andras , BAILEY, Andrew, D., III , BERNEY, Butch
IPC分类号： H01J37/32
摘要： A plasma processing chamber for processing a substrate to form electronic components thereon is disclosed. The plasma processing chamber includes a plasma-facing component (602) having a plasma-facing surface oriented toward plasma in the plasma processing chamber during processing of the substrate, the plasma-facing component being electrically isolated from a ground terminal. The plasma processing chamber further includes a grounding arrangement (600) coupled to the plasma-facing component, the grounding arrangement including a first resistance circuit (610) disposed in a first current path between the plasma-facing component and the ground terminal. The grounding arrangement further includes a RF filter arrangement (604, 610) disposed in at least one other current path between the plasma-facing component and the ground terminal, wherein a resistance value of the first resistance circuit is selected to substantially eliminate arcing between the plasma and the plasma-facing component during the processing of the substrate.

10. 发明申请

WO2009085238A1 COPPER DISCOLORATION PREVENTION FOLLOWING BEVEL ETCH PROCESS 审中-公开
标题翻译：铜洗涤过程中的铜污染防治
公开(公告)号：WO2009085238A1
公开(公告)日：2009-07-09
申请号：PCT/US2008/013954
申请日：2008-12-22
申请人： LAM RESEARCH CORPORATION , FANG, Tong , BAILEY, Andrew, D., III , KIM, Yunsang , RIGOUTAT, Olivier , STOJAKOVIC, George
发明人： FANG, Tong , BAILEY, Andrew, D., III , KIM, Yunsang , RIGOUTAT, Olivier , STOJAKOVIC, George
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , H01J37/32366 , H01L21/02068 , H01L21/02087 , H01L21/32136 , H01L21/6708
摘要： A method of bevel edge etching a semiconductor substrate having exposed copper surfaces with a fluorine-containing plasma in a bevel etcher in which the semiconductor substrate is supported on a semiconductor substrate support comprises bevel edge etching the semiconductor substrate with the fluorine-containing plasma in the bevel etcher; evacuating the bevel etcher after the bevel edge etching is completed; flowing defluorinating gas into the bevel etcher; energizing the defluorinating gas into a defluorination plasma at a periphery of the semiconductor substrate; and processing the semiconductor substrate with the defluorination plasma under conditions to prevent discoloration of the exposed copper surfaces of the semiconductor substrate upon exposure, the discoloration occurring upon prolonged exposure to air.
摘要翻译：在半导体衬底支撑在半导体衬底支撑体上的斜面蚀刻器中，使用具有含氟等离子体的具有暴露的铜表面的半导体衬底进行斜边蚀刻的方法包括：在半导体衬底支撑体中的含氟等离子体斜角蚀刻机在斜边蚀刻完成之后排空斜面蚀刻机; 将脱氟气体流入斜面蚀刻机; 在所述半导体衬底的外围将所述脱氟气体通电为脱氟等离子体; 并且在曝光时防止半导体衬底的暴露的铜表面的变色的条件下，用脱氟等离子体处理半导体衬底，在长时间暴露于空气时发生变色。

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