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1. 发明申请

WO2004108617A2 METHODS OF FINISHING QUARTZ GLASS SURFACES AND COMPONENTS MADE BY THE METHODS 审中-公开
标题翻译：方法完成石英玻璃表面和组分的方法
公开(公告)号：WO2004108617A2
公开(公告)日：2004-12-16
申请号：PCT/US2004/016857
申请日：2004-05-28
申请人： LAM RESEARCH CORPORATION , KIEHLBAUCH, Mark, W. , DAUGHERTY, John, E.
发明人： KIEHLBAUCH, Mark, W. , DAUGHERTY, John, E.
IPC分类号： C03C
CPC分类号： C03C23/0075 , C03C15/00 , C03C19/00 , C03C2204/08 , Y10S438/905 , Y10S438/906
摘要： Methods of surface finishing a component useful for a plasma processing apparatus are provided. The component includes at least one plasma-exposed quartz glass surface. The method includes mechanically polishing, chemically etching and cleaning the plasma-exposed surface to achieve a desired surface morphology. Quartz glass sealing surfaces of the component also can be finished by the methods. Plasma-exposed surface and sealing surfaces of the same component can be finished to different surface morphologies from each other.
摘要翻译：提供表面处理用于等离子体处理装置的部件的方法。该组件包括至少一个等离子体暴露的石英玻璃表面。该方法包括机械抛光，化学蚀刻和清洁等离子体暴露表面以实现期望的表面形态。石英玻璃密封面的组件也可以通过这种方法完成。等离子体暴露的表面和相同部件的密封表面可以被完成为不同的表面形态彼此。

2. 发明申请

WO2006012021A2 METHODS AND APPARATUS FOR OPTIMAL TEMPERATURE CONTROL IN A PLASMA PROCESSING SYSTEM 审中-公开
标题翻译：一种等离子体处理系统中最佳温度控制的方法与装置
公开(公告)号：WO2006012021A2
公开(公告)日：2006-02-02
申请号：PCT/US2005/021202
申请日：2005-06-14
申请人： LAM RESEARCH CORPORATION , SALDANA, Miguel, A. , SHARPLESS, Leonard, J. , DAUGHERTY, John, E.
发明人： SALDANA, Miguel, A. , SHARPLESS, Leonard, J. , DAUGHERTY, John, E.
IPC分类号： C23F1/00
CPC分类号： H01L21/67248 , F28D1/06 , F28D2021/0077 , F28F2013/006 , H01J37/321 , H01J37/32522 , H01L21/67069
摘要： A temperature control device for controlling temperature of an upper chamber of a plasma processing apparatus is described. The temperature control device includes a thermally conductive body having an inner surface and an outer surface removably connected with and in thermal communication with the upper chamber of the plasma processing apparatus. The temperature control device also includes a plurality of thermal interface layers in thermal communication with the thermally conductive body wherein at least one layer is a heating element; and a cooling element connected with the banded thermally conductive body and thermally coupled with the upper chamber of the plasma processing apparatus wherein the cooling element is configured to conduct a fluidic medium. The temperature control device further includes at least one temperature sensor for sensing temperature of the upper chamber of the plasma processing apparatus; a temperature control unit for controlling the heating element and the cooling element; and a latching mechanism for securing the temperature control device to the upper chamber.
摘要翻译：描述了一种用于控制等离子体处理装置的上部室的温度的温度控制装置。温度控制装置包括导热体，其具有可拆卸地与等离子体处理装置的上腔室连接并与热连通的内表面和外表面。温度控制装置还包括与导热体热连通的多个热界面层，其中至少一层是加热元件; 以及与所述带状导热体连接并与所述等离子体处理设备的上室热耦合的冷却元件，其中所述冷却元件被配置为导入流体介质。温度控制装置还包括至少一个温度传感器，用于感测等离子体处理装置的上腔室的温度; 用于控制加热元件和冷却元件的温度控制单元; 以及用于将温度控制装置固定到上室的闭锁机构。

3. 发明申请

WO2006039211A2 CORROSION RESISTANT APPARATUS FOR CONTROL OF A MULTI-ZONE NOZZLE IN A PLASMA PROCESSING SYSTEM 审中-公开
标题翻译：用于控制等离子体处理系统中的多个喷嘴的耐腐蚀设备
公开(公告)号：WO2006039211A2
公开(公告)日：2006-04-13
申请号：PCT/US2005/034239
申请日：2005-09-23
申请人： LAM RESEARCH CORPORATION , HAO, Fangli , DAUGHERTY, John, E. , TAPPAN, James
发明人： HAO, Fangli , DAUGHERTY, John, E. , TAPPAN, James
IPC分类号： C23C14/00 , C23C14/32
CPC分类号： H01J37/3244 , H01J37/32082
摘要： In a plasma processing system, an integrated gas flow control assembly for connecting a gas distribution system to a multi-zone injector is disclosed. The assembly includes a first set of channels connecting the gas distribution system to a first valve assembly with a first flow rate, a second valve assembly with a second flow rate, a third flow assembly with a third flow rate, and a fourth flow assembly with a fourth flow rate, wherein when the first valve assembly is substantially open, the third flow rate is less than the first flow rate, and wherein when the second valve assembly is substantially open, the fourth flow rate is less than the second flow rate. The assembly also includes a second set of channels for connecting the third flow assembly and the first valve assembly to a first multi-zone injector zone. The assembly further includes a third set of channels for connecting the fourth flow assembly and the second valve assembly to a second multi-zone injector zone. Wherein if the first valve assembly is closed, a first multi-zone injector zone flow rate is about the third flow rate, and wherein if the second valve assembly is closed, a second multi-zone injector zone flow rate is about the fourth flow rate.
摘要翻译：在等离子体处理系统中，公开了一种用于将气体分配系统连接到多区域喷射器的集成气体流量控制组件。组件包括将气体分配系统连接到具有第一流量的第一阀组件的第一组通道，具有第二流量的第二阀组件，具有第三流量的第三流量组件和具有第三流量的第四流量组件，第四流量，其中当第一阀组件基本上打开时，第三流量小于第一流量，并且其中当第二阀组件基本上打开时，第四流量小于第二流量。组件还包括用于将第三流动组件和第一阀组件连接到第一多区域注入器区域的第二组通道。组件还包括用于将第四流动组件和第二阀组件连接到第二多区域注入器区域的第三组通道。其中，如果第一阀组件关闭，则第一多区域喷射器区域流速约为第三流量，并且其中如果第二阀组件关闭，则第二多区域喷射器区域流速约为第四流量。

4. 发明申请

WO2004003962A3 THERMAL SPRAYED YTTRIA-CONTAINING COATING FOR PLASMA REACTOR 审中-公开
公开(公告)号：WO2004003962A3
公开(公告)日：2004-01-08
申请号：PCT/US2003/018502
申请日：2003-06-12
申请人： LAM RESEARCH CORPORATION , O'DONNELL, Robert, J. , DAUGHERTY, John, E.
发明人： O'DONNELL, Robert, J. , DAUGHERTY, John, E.
IPC分类号： H01J37/32
摘要： Components of semiconductor processing apparatus comprise thermal sprayed yttria-containing coatings that provide erosion, corrosion and/or corrosion-erosion resistance in plasma atmospheres. The coatings can protect substrates from physical and/or chemical attack.

5. 发明申请

WO02054453A1 ZIRCONIA TOUGHENED CERAMIC COMPONENTS AND COATINGS IN SEMICONDUCTOR PROCESSING EQUIPMENT AND METHOD OF MANUFACTURE THEREOF 审中-公开
标题翻译： ZIRCONIA半导体加工设备中的粗化陶瓷组件和涂层及其制造方法
公开(公告)号：WO02054453A1
公开(公告)日：2002-07-11
申请号：PCT/US2001/043149
申请日：2001-11-21
申请人： LAM RESEARCH CORPORATION , O'DONNELL, Robert, J. , CHANG, Christopher, C. , DAUGHERTY, John, E.
发明人： O'DONNELL, Robert, J. , CHANG, Christopher, C. , DAUGHERTY, John, E.
IPC分类号： H01L21/00
CPC分类号： H01J37/32477 , C23C14/083 , C23C16/405 , Y10T428/265
摘要： A corrosion resistant component of semiconductor processing equipment such as a plasma chamber comprises zirconia toughened ceramic material as an outermost surface of the component. The component can be made entirely of the ceramic material or the ceramic material can be provided as a coating on a substrate such as aluminum or aluminum alloy, stainless steel, or refractory metal. The zirconia toughened ceramic can be tetragonal zirconia polycrystalline (TZP) material, partially-stabilized zirconia (PSZ), or a zirconia dispersion toughened ceramic (ZTC) such as zirconia-toughened alumina (tetragonal zirconia particles dispersed in Al2O3). In the case of a ceramic zirconia toughened coating, one or more intermediate layers may be provided between the component and the ceramic coating. To promote adhesion of the ceramic coating, the component surface or the intermediate layer surface may be subjected to a surface roughening treatment prior to depositing the ceramic coating.
摘要翻译：诸如等离子体室的半导体加工设备的耐腐蚀部件包括氧化锆增韧陶瓷材料作为部件的最外表面。该组件可以完全由陶瓷材料制成，或者陶瓷材料可以作为涂层提供在诸如铝或铝合金，不锈钢或难熔金属的基底上。氧化锆增韧陶瓷可以是四方晶氧化锆多晶（TZP）材料，部分稳定的氧化锆（PSZ）或氧化锆分散体增韧陶瓷（ZTC）如氧化锆增韧的氧化铝（四方晶氧化锆颗粒分散在Al2O3中）。在陶瓷氧化锆增韧涂层的情况下，可以在组件和陶瓷涂层之间提供一个或多个中间层。为了促进陶瓷涂层的粘合，可以在沉积陶瓷涂层之前对组分表面或中间层表面进行表面粗糙化处理。

6. 发明申请

WO2008121287A1 METHODOLOGY FOR CLEANING OF SURFACE METAL CONTAMINATION FROM ELECTRODE ASSEMBLIES 审中-公开
标题翻译：从电极组件清洗表面金属污染的方法
公开(公告)号：WO2008121287A1
公开(公告)日：2008-10-09
申请号：PCT/US2008/003969
申请日：2008-03-27
申请人： LAM RESEARCH CORPORATION , SHIH, Hong , YIN, Yaobo , WU, Shun, Jackson , AVOYAN, Armen , DAUGHERTY, John, E. , JIANG, Linda
发明人： SHIH, Hong , YIN, Yaobo , WU, Shun, Jackson , AVOYAN, Armen , DAUGHERTY, John, E. , JIANG, Linda
IPC分类号： H01L21/3065
CPC分类号： B08B3/08 , B08B3/12 , H01J37/32862 , H01L21/67051 , H01L21/67069
摘要： Systematic and effective methodology to clean capacitively coupled plasma reactor electrodes and reduce surface roughness so that the cleaned electrodes meet surface contamination specifications and manufacturing yields are enhanced. Pre-cleaning of tools used in the cleaning process helps prevent contamination of the electrode being cleaned.
摘要翻译：系统和有效的清洁电容耦合等离子体反应堆电极的方法，并降低表面粗糙度，从而提高清洁电极满足表面污染规格和制造产量。对清洁过程中使用的工具进行预清洁有助于防止被清洁电极的污染。

7. 发明申请

WO2002079538A1 CERIUM OXIDE CONTAINING CERAMIC COMPONENTS AND COATINGS IN SEMICONDUCTOR PROCESSING EQUIPMENT 审中-公开
标题翻译：在半导体加工设备中含有陶瓷组分和涂料的氧化铈
公开(公告)号：WO2002079538A1
公开(公告)日：2002-10-10
申请号：PCT/US2002/006651
申请日：2002-03-21
申请人： LAM RESEARCH CORPORATION , O'DONNELL, Robert, J. , DAUGHERTY, John, E.
发明人： O'DONNELL, Robert, J. , DAUGHERTY, John, E.
IPC分类号： C23C16/44
CPC分类号： C04B35/50 , B01J19/0073 , B01J19/02 , B01J2219/0218 , B01J2219/024 , C04B2235/3217 , C04B2235/3225 , C04B2235/3229 , C04B2235/3244 , C04B2235/3817 , C04B2235/80 , C23C16/4404 , C23C28/042 , H01J37/32477 , Y10S156/915
摘要： A corrosion resistant component of semiconductor processing equipment such as a plasma chamber comprises a cerium oxide containing ceramic material as an outermost surface of the component. The cerium oxide containing ceramic material comprises one or more cerium oxides as the single largest constituent thereof. The component can be made entirely of the cerium oxide containing ceramic material or, alternatively, the cerium oxide containing ceramic can be provided as a layer on a substrate such as aluminum or an aluminum alloy, a ceramic material, stainless steel, or a refractory metal. The cerium oxide containing ceramic layer can be provided as a coating by a technique such as plasma spraying. One or more intermediate layers may be provided between the component and the cerium oxide containing ceramic coating. To promote adhesion of the cerium oxide containing ceramic coating, the component surface or the intermediate layer surface may be subjected to a surface roughening treatment prior to depositing the cerium oxide containing ceramic coating.
摘要翻译：诸如等离子体室的半导体加工设备的耐腐蚀组分包括含有氧化铈的陶瓷材料作为组分的最外表面。含有氧化铈的陶瓷材料包含一种或多种作为其最大成分的氧化铈。该组分可以完全由含氧化铈的陶瓷材料制成，或者可选地，含氧化铈陶瓷可以作为基底如铝或铝合金，陶瓷材料，不锈钢或难熔金属。含氧化铈陶瓷层可以通过诸如等离子喷涂的技术作为涂层提供。可以在组分和含氧化铈的陶瓷涂层之间提供一个或多个中间层。为了促进含氧化铈陶瓷涂层的粘附，可以在沉积含氧化铈陶瓷涂层之前对组分表面或中间层表面进行表面粗糙化处理。

8. 发明申请

WO2002091453A1 HIGH PRESSURE WAFER-LESS AUTO CLEAN FOR ETCH APPLICATIONS 审中-公开
标题翻译：高压无刷自动清洗用于蚀刻应用
公开(公告)号：WO2002091453A1
公开(公告)日：2002-11-14
申请号：PCT/US2002/014102
申请日：2002-05-03
申请人： LAM RESEARCH CORPORATION , SINGH, Harmeet , DAUGHERTY, John, E. , ULLAL, Saurabh, J.
发明人： SINGH, Harmeet , DAUGHERTY, John, E. , ULLAL, Saurabh, J.
IPC分类号： H01L21/3213
CPC分类号： H01J37/32467 , B08B7/00 , H01J37/321 , H01J37/32862 , H01J37/32935
摘要： A method for cleaning a processing chamber is provided. The method initiates with introducing a fluorine containing gaseous mixture into a processing chamber. Then, a plasma is created from the fluorine containing gaseous mixture in the processing chamber. Next, a chamber pressure is established that corresponds to a threshold ion energy in which ions of the plasma clean inner surfaces of the processing chamber without leaving a residue. A method for substantially eliminating residual aluminum fluoride particles deposited by an in-situ cleaning process for a semiconductor processing chamber and a plasma processing system for executing an in-situ cleaning process are also provided.
摘要翻译：提供了一种用于清洁处理室的方法。该方法通过将含氟气体混合物引入处理室来启动。然后，从处理室中的含氟气体混合物产生等离子体。接下来，建立对应于阈值离子能量的室压力，其中等离子体的离子清洁处理室的内表面而不残留物。还提供了用于基本上消除通过用于半导体处理室的原位清洁工艺沉积的残余氟化铝颗粒的方法和用于执行原位清洁工艺的等离子体处理系统。

9. 发明申请

WO2002068129A1 CORROSION RESISTANT COMPONENT OF SEMICONDUCTOR PROCESSING EQUIPMENT AND METHOD OF MANUFACTURE THEREOF 审中-公开
标题翻译：半导体加工设备的耐腐蚀性成分及其制造方法
公开(公告)号：WO2002068129A1
公开(公告)日：2002-09-06
申请号：PCT/US2001/043152
申请日：2001-11-21
申请人： LAM RESEARCH CORPORATION , O'DONNELL, Robert, J. , CHANG, Christopher, C. , DAUGHERTY, John, E.
发明人： O'DONNELL, Robert, J. , CHANG, Christopher, C. , DAUGHERTY, John, E.
IPC分类号： B05D1/02
CPC分类号： H01J37/32467 , H01J37/32477 , H01J37/32559
摘要： A corrosion resistant component of a plasma chamber includes a liquid crystalline polymer. In a preferred embodiment, the liquid crystalline polymer (LCP) is provided on an aluminum component having an anodized or non- anodized surface. The liquid crystalline polymer can also be provided on an alumina component. The liquid crystalline polymer can be deposited by a method such as plasma spraying. The liquid crystalline polymer may also be provided as a preformed sheet or other shape adapted to cover the exposed surfaces of the reaction chamber. Additionally, the reactor components may be made entirely from liquid crystalline polymer by machining the component from a solid block of liquid crystalline polymer or molding the component from the polymer. The liquid crystalline polymer may contain reinforcing fillers such as glass or mineral fillers.
摘要翻译：等离子体室的耐腐蚀组分包括液晶聚合物。在优选的实施方案中，液晶聚合物（LCP）设置在具有阳极氧化或非阳极氧化表面的铝组分上。液晶聚合物也可以提供在氧化铝组分上。液晶聚合物可以通过诸如等离子喷涂的方法沉积。液晶聚合物也可以被提供为预成型片或适于覆盖反应室暴露表面的其它形状。此外，反应器组分可以通过从液晶聚合物的固体块中加工组分或从聚合物模塑组分而完全由液晶聚合物制成。液晶聚合物可以含有增强填料如玻璃或矿物填料。

10. 发明申请

WO2002054454A3 DIAMOND COATINGS ON REACTOR WALL AND METHOD OF MANUFACTURING THEREOF 审中-公开
公开(公告)号：WO2002054454A3
公开(公告)日：2002-07-11
申请号：PCT/US2001/043153
申请日：2001-11-21
申请人： LAM RESEARCH CORPORATION , O'DONNELL, Robert, J. , DAUGHERTY, John, E. , CHANG, Christopher, C.
发明人： O'DONNELL, Robert, J. , DAUGHERTY, John, E. , CHANG, Christopher, C.
IPC分类号： C23C16/44
摘要： A corrosion resistant component of semiconductor processing equipment such as a plasma chamber includes a diamond containing surface and process for manufacture thereof. The equipment may be a plasma etching chamber.

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