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1. 发明申请

WO2022072382A1 COATED CONDUCTOR FOR HEATER EMBEDDED IN CERAMIC 审中-公开
公开(公告)号：WO2022072382A1
公开(公告)日：2022-04-07
申请号：PCT/US2021/052473
申请日：2021-09-28
申请人： LAM RESEARCH CORPORATION
发明人： HOLLINGSWORTH, Joel , LINGAMPALLI, Ramkishan Rao , HAZARIKA, Pankaj
IPC分类号： H01L21/67 , H01L21/687 , H05B1/02 , H05B3/28 , H05B3/12
摘要： Various embodiments herein relate to techniques for fabricating a platen for use in a semiconductor processing apparatus, as well as the platens and intermediate structures produced by such techniques. For example, such techniques may include depositing a coating on a heater to form a coated heater, where the heater includes a metal wire on which the coating is formed; placing the coated heater in powder; consolidating the powder into a cohesive mass to form a powder-based composite; and sintering the powder-based composite to form the platen, where the platen includes the heater embedded in sintered ceramic material. The coating on the heater may act to protect the heater from chemical attack from carbon- and/or oxygen-containing compounds that may be present during sintering. The platen may be part of a pedestal that, once fabricated, may be installed in a semiconductor processing apparatus.

2. 发明申请

WO2021080953A1 MONOLITHIC ANISOTROPIC SUBSTRATE SUPPORTS 审中-公开
公开(公告)号：WO2021080953A1
公开(公告)日：2021-04-29
申请号：PCT/US2020/056436
申请日：2020-10-20
申请人： LAM RESEARCH CORPORATION
发明人： HOLLINGSWORTH, Joel , LINGAMPALLI, Ramkishan Rao , LEESER, Karl Frederick , TOPPING, Stephen , BAKER, Noah Elliot
IPC分类号： H01L21/683 , H02N13/00 , H01L21/67 , C23C16/458
摘要： A substrate support includes a monolithic anisotropic body, which includes first, second and intermediate layers. The first layer is formed of a first material and disposed therein are RF and clamping electrodes. The second layer is formed of the first material or a second material and disposed therein is a heating element. The intermediate layer is formed of a different material than the first and second layers, such that at least one of: a thermal energy conductivity of the intermediate layer is different than a thermal energy conductivity of at least one of the first or second materials; or an electrical energy conductivity of the intermediate layer is different than an electrical conductivity of at least one of the first or second materials. Either the intermediate layer is disposed between the first and second layers or the second layer is disposed between the first and intermediate layers.

3. 发明申请

WO2021112991A1 SUBSTRATE SUPPORTS WITH INTEGRATED RF FILTERS 审中-公开
公开(公告)号：WO2021112991A1
公开(公告)日：2021-06-10
申请号：PCT/US2020/058484
申请日：2020-11-02
申请人： LAM RESEARCH CORPORATION
发明人： KAPOOR, Sunil , MAROHL, Dan , LINGAMPALLI, Ramkishan Rao , MADSEN, Eric
IPC分类号： C23C16/458 , C23C16/46 , C23C16/509 , H01J37/32
摘要： A substrate support including a body, a heating element, a first radio frequency filter, and a second radio frequency filter. The body is configured to support a substrate. The heating element is at least partially implemented in a first portion of the body. The first radio frequency filter is connected to an input of the heating element and at least partially implemented in a second portion of the body and connected to the heating element by a first via. The second radio frequency filter is connected to an output of the heating element and at least partially implemented in the second portion or a third portion of the body.

4. 发明申请

WO2020186120A1 LAMELLAR CERAMIC STRUCTURE 审中-公开
公开(公告)号：WO2020186120A1
公开(公告)日：2020-09-17
申请号：PCT/US2020/022495
申请日：2020-03-12
申请人： LAM RESEARCH CORPORATION
发明人： HOLLINGSWORTH, Joel Philip , LEESER, Karl Frederick , LINGAMPALLI, Ramkishan Rao
IPC分类号： H01L21/687 , H01L21/67 , H01L21/683 , H02N13/00 , B23Q3/15 , C23C16/458 , H01J37/32
摘要： In some examples, a substrate support assembly comprises a monolithic ceramic body, a heater element disposed within the monolithic ceramic body, and an RF antenna disposed within the monolithic ceramic body. One or more power lines supplies the heater element and the RF antenna. A lamellar structure is formed or included within the monolithic ceramic body, the lamellar structure including at least one layer having a thermal conductivity different than a thermal conductivity of the monolithic ceramic body.

5. 发明申请

WO2021167939A1 HIGH TEMPERATURE SUBSTRATE SUPPORT WITH HEAT SPREADER 审中-公开
公开(公告)号：WO2021167939A1
公开(公告)日：2021-08-26
申请号：PCT/US2021/018313
申请日：2021-02-17
申请人： LAM RESEARCH CORPORATION
发明人： CHANDRASEKHARAN, Ramesh , LEESER, Karl Frederick , GAGE, Christopher , NIMMALA, Seshu , LINGAMPALLI, Ramkishan Rao , HOLLINGSWORTH, Joel , BURKHART, Vincent , LAFFERTY, William , BELOSTOTSKIY, Sergey Georgiyevich
IPC分类号： C23C16/458 , C23C16/46
摘要： A baseplate for a substrate support includes a heater layer configured to selectively heat the baseplate and a heat spreader disposed between the heater layer and an upper surface of the baseplate. The heat spreader is configured to distribute heat provided by the heater layer throughout the baseplate. The baseplate includes a first material that has a first coefficient of thermal expansion (CTE) and a first thermal conductivity. The heat spreader includes a second material that has a second CTE and a second thermal conductivity greater than the first thermal conductivity.

6. 发明申请

WO2019023429A3 MONOLITHIC CERAMIC GAS DISTRIBUTION PLATE 审中-公开
公开(公告)号：WO2019023429A3
公开(公告)日：2019-01-31
申请号：PCT/US2018/043843
申请日：2018-07-26
申请人： LAM RESEARCH CORPORATION
发明人： TUCKER, Jeremy , LINGAMPALLI, Ramkishan Rao
IPC分类号： H01L21/67 , H01L21/02
摘要： A monolithic ceramic gas distribution plate for use in a process chamber wherein semiconductor substrates can be processed includes a monolithic ceramic body having an upper surface, a lower surface, and an outer cylindrical surface extending between the upper surface and the lower surface. The lower surface includes first gas outlets at uniformly spaced apart first locations and the first gas outlets are in fluid communication with first gas inlets in the upper surface by a first set of vertically extending through holes connecting the first gas inlets with the first gas outlets. The lower surface also includes second gas outlets at uniformly spaced second locations adjacent the first locations and the second gas outlets are in fluid communication with an inner plenum in the monolithic ceramic body by a second set of vertically extending through holes connecting the second gas outlets with the inner plenum. The inner plenum is in fluid communication with a second gas inlet located in a central portion of the upper surface and the inner plenum is defined by an inner upper wall, an inner lower wall, an inner outer wall, and a set of pillars extending between the inner upper wall and the inner lower wall. Each through hole of the first set of vertically extending through holes passes through a respective one of the pillars to isolate the first and second gases.

7. 发明申请

WO2019023429A2 MONOLITHIC CERAMIC GAS DISTRIBUTION PLATE 审中-公开
公开(公告)号：WO2019023429A2
公开(公告)日：2019-01-31
申请号：PCT/US2018/043843
申请日：2018-07-26
申请人： LAM RESEARCH CORPORATION
发明人： TUCKER, Jeremy , LINGAMPALLI, Ramkishan Rao
IPC分类号： H01L21/67 , H01L21/02
摘要： A monolithic ceramic gas distribution plate for use in a process chamber wherein semiconductor substrates can be processed includes a monolithic ceramic body having an upper surface, a lower surface, and an outer cylindrical surface extending between the upper surface and the lower surface. The lower surface includes first gas outlets at uniformly spaced apart first locations and the first gas outlets are in fluid communication with first gas inlets in the upper surface by a first set of vertically extending through holes connecting the first gas inlets with the first gas outlets. The lower surface also includes second gas outlets at uniformly spaced second locations adjacent the first locations and the second gas outlets are in fluid communication with an inner plenum in the monolithic ceramic body by a second set of vertically extending through holes connecting the second gas outlets with the inner plenum. The inner plenum is in fluid communication with a second gas inlet located in a central portion of the upper surface and the inner plenum is defined by an inner upper wall, an inner lower wall, an inner outer wall, and a set of pillars extending between the inner upper wall and the inner lower wall. Each through hole of the first set of vertically extending through holes passes through a respective one of the pillars to isolate the first and second gases.

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