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1. 发明申请

WO2018220532A1 PASSIVATION MIXTURE AND SYSTEMS AND METHODS FOR SELECTIVELY PASSIVATING SUBSTRATE MATERIALS INCLUDING GERMANIUM OR TYPE III-IV MATERIALS USING THE PASSIVATION MIXTURE 审中-公开
公开(公告)号：WO2018220532A1
公开(公告)日：2018-12-06
申请号：PCT/IB2018/053820
申请日：2018-05-29
申请人： LAM RESEARCH AG , LAM RESEARCH CORPORATION
发明人： DICTUS, Dries
IPC分类号： H01L21/28 , H01L21/02 , H01L21/56
CPC分类号： C23C22/73 , C23C22/60
摘要： A liquid passivation mixture for passivating an outer layer of a substrate comprises a first material selected from group consisting of sulfur or selenium and a base selected from a group consisting of quaternary ammonium compound, sodium hydroxide (NaOH), potassium hydroxide (KOH), and amine.

2. 发明申请

WO2021072042A1 POSITIVE TONE DEVELOPMENT OF CVD EUV RESIST FILMS 审中-公开
公开(公告)号：WO2021072042A1
公开(公告)日：2021-04-15
申请号：PCT/US2020/054730
申请日：2020-10-08
申请人： LAM RESEARCH CORPORATION
发明人： WEIDMAN, Timothy William , NARDI, Katie Lynn , DICTUS, Dries , KAM, Benjamin , WU, Chenghao , HANSEN, Eric Calvin , KENANE, Nizan , GU, Kevin Li
IPC分类号： G03F7/16 , G03F7/20 , G03F7/004 , G03F7/32 , C23C16/56
摘要： The present disclosure relates to post-application treatment of a radiation-sensitive film to provide a hardened resist film. In some instances, such films can be used to form a pattern by a positive tone wet development process.

3. 发明申请

WO2020006532A1 ZINCATING AND DOPING OF METAL LINER FOR LINER PASSIVATION AND ADHESION IMPROVEMENT 审中-公开
公开(公告)号：WO2020006532A1
公开(公告)日：2020-01-02
申请号：PCT/US2019/040014
申请日：2019-06-28
申请人： LAM RESEARCH CORPORATION
发明人： JOI, Aniruddha , DICTUS, Dries , DORDI, Yezdi
IPC分类号： C23C16/56 , C23C16/40 , C23C16/455 , C23C16/04 , C23C10/28 , C23C18/16 , H01L21/768
摘要： A method for forming a self-forming barrier in a feature of a substrate is provided, including the following operations: depositing a metallic liner in the feature of the substrate, the metallic liner being deposited over a dielectric of the substrate; depositing a zinc- containing precursor over the metallic liner; performing a thermal soak of the substrate; repeating the depositing of the zinc-containing precursor and the thermal soak of the substrate for a predefined number of cycles; wherein the method forms a zinc-containing barrier layer at an interface between the metallic liner and the dielectric.

4. 发明申请

WO2022016126A1 METAL CHELATORS FOR DEVELOPMENT OF METAL-CONTAINING PHOTORESIST 审中-公开
公开(公告)号：WO2022016126A1
公开(公告)日：2022-01-20
申请号：PCT/US2021/042106
申请日：2021-07-16
申请人： LAM RESEARCH CORPORATION
发明人： HANSEN, Eric, Calvin , WEIDMAN, Timothy, William , WU, Chenghao , GU, Kevin, Li , DICTUS, Dries
IPC分类号： G03F7/32 , G03F7/20 , G03F7/16 , G03F7/004 , H01L21/027 , H01L21/67
摘要： The present disclosure relates to use of a metal chelator to treat an exposed photoresist film. In particular embodiments, the metal chelator is employed to remove an interfacial area that is disposed between exposed and unexposed areas or disposed within an exposed area, thereby enhancing patterning quality.

5. 发明申请

WO2019236311A1 METAL LINER PASSIVATION AND ADHESION ENHANCEMENT BY ZINC DOPING 审中-公开
公开(公告)号：WO2019236311A1
公开(公告)日：2019-12-12
申请号：PCT/US2019/033710
申请日：2019-05-23
申请人： LAM RESEARCH CORPORATION
发明人： DORDI, Yezdi N. , JOI, Aniruddha , MADSEN, Steven James , DICTUS, Dries
IPC分类号： H01L21/285 , H01L21/28 , H01L21/02 , H01L21/768
摘要： A method comprises depositing a barrier layer on a dielectric layer to prevent oxidation of a metal layer to be deposited by electroplating due to an oxide present in the dielectric layer and depositing a doped liner layer on the barrier layer to bond with the metal layer to be deposited on the liner layer by the electroplating. The dopant forms a protective passivation layer on a surface of the liner layer and dissolves during the electroplating so that the metal layer deposited on the liner layer by the electroplating bonds with the liner layer. The dopant reacts with the dielectric layer and forms a layer of a compound between the barrier layer and the dielectric layer. The compound layer prevents oxidation of the barrier layer and the liner layer due to the oxide present in the dielectric layer and adheres the barrier layer to the dielectric layer.

6. 发明申请

WO2022125388A1 PHOTORESIST DEVELOPMENT WITH ORGANIC VAPOR 审中-公开
公开(公告)号：WO2022125388A1
公开(公告)日：2022-06-16
申请号：PCT/US2021/061751
申请日：2021-12-03
申请人： LAM RESEARCH CORPORATION [US]/[US]
发明人： DICTUS, Dries , WU, Chenghao , HANSEN, Eric Calvin , WEIDMAN, Timothy William
IPC分类号： G03F7/36 , G03F7/16 , G03F7/004 , C09K13/06 , C09K13/08
摘要： Development of resists are useful, for example, to form a patterning mask in the context of high-resolution patterning. Development can be accomplished using an organic vapor such as a carboxylic acid. In some implementations, the organic vapor is trifluoroacetic acid. In some implementations, the organic vapor is hexafluoro-acetylacetone. A metal-containing resist film such as an EUV-sensitive organo-metal oxide may be deposited on a semiconductor substrate using a dry or wet deposition technique. The metal-containing resist film on the semiconductor substrate may be developed using the organic vapor, or residue of metal-containing resist material formed on surfaces of a process chamber may be removed using the organic vapor.

7. 发明申请

WO2013090099A1 ELECTROLESS COPPER DEPOSITION 审中-公开
标题翻译：电镀铜沉积
公开(公告)号：WO2013090099A1
公开(公告)日：2013-06-20
申请号：PCT/US2012/068034
申请日：2012-12-05
申请人： LAM RESEARCH CORPORATION
发明人： DORDI, Yezdi N. , JANEK, Richard P. , DICTUS, Dries
IPC分类号： H01L21/285 , H01L21/28 , H01L21/3205
CPC分类号： C23C16/26 , C23C16/56 , C23C18/2086 , C23C18/22 , C23C18/38 , H01J37/32082 , H01J37/3244 , H01L2924/0002 , H01L2924/00
摘要： A method for providing electroless plating is provided. An amorphous carbon barrier layer is formed over the low-k dielectric layer by providing a flow a deposition gas, comprising a hydrocarbon, H 2 and an oxygen free diluent, forming a plasma from the deposition gas, and stopping the flow of the deposition gas. The amorphous carbon barrier layer is conditioned by providing a flow of a conditioning gas comprising H 2 and a diluent, forming a plasma from the conditioning gas, which conditions a top surface of the amorphous carbon barrier layer, and stopping the flow of the conditioning gas. The amorphous carbon barrier layer is functionalized by providing a flow of a functionalizing gas comprising NH 3 or H 2 and N 2 , forming a plasma from the functionalizing gas, and stopping the flow of the functionalizing gas. An electroless process is provided to form an electrode over the barrier layer.
摘要翻译：提供了一种提供化学镀的方法。通过提供包含烃，H 2和无氧稀释剂的沉积气体，从沉积气体形成等离子体并停止沉积气体的流动，在低k电介质层上形成无定形碳阻挡层。通过提供包含H2和稀释剂的调节气体的流动来调节无定形碳阻挡层，该稀释剂从调节气体形成等离子体，其调节无定形碳阻挡层的顶表面，并停止调节气体的流动。通过提供包含NH 3或H 2和N 2的官能化气体的流动，从官能化气体形成等离子体并停止官能化气体的流动来使无定形碳阻挡层功能化。提供无电解方法以在阻挡层上形成电极。

8. 发明申请

WO2022103764A1 PROCESS TOOL FOR DRY REMOVAL OF PHOTORESIST 审中-公开
公开(公告)号：WO2022103764A1
公开(公告)日：2022-05-19
申请号：PCT/US2021/058647
申请日：2021-11-09
申请人： LAM RESEARCH CORPORATION
发明人： DICTUS, Dries , WEIDMAN, Timothy William
IPC分类号： H01L21/67 , G03F7/42
摘要： Dry development or dry removal of metal-containing extreme ultraviolet radiation (EUV) photoresist is performed in atmospheric conditions or performed in process tools without vacuum equipment. Dry removal of the metal-containing EUV photoresist may be performed under atmospheric pressure or over-atmospheric pressure. Dry removal of the metal-containing EUV photoresist may be performed with exposure to an air environment or with non-oxidizing gases. A process chamber or module may be modified or integrated to perform dry removal of the metal-containing EUV photoresist with baking, wafer cleaning, wafer treatment, or other photoresist processing function. In some embodiments, the process chamber for dry removal of the metal-containing EUV photoresist includes a heating assembly for localized heating of a semiconductor substrate and a movable discharge nozzle for localized gas delivery above the semiconductor substrate.

9. 发明申请

WO2021108252A1 DOPING PROCESSES IN METAL INTERCONNECT STRUCTURES 审中-公开
公开(公告)号：WO2021108252A1
公开(公告)日：2021-06-03
申请号：PCT/US2020/061502
申请日：2020-11-20
申请人： LAM RESEARCH CORPORATION
发明人： JOI, Aniruddha , DICTUS, Dries , DORDI, Yezdi
IPC分类号： H01L21/768
摘要： A metal interconnect structure is doped with zinc, indium, or gallium using top-down doping processes to improve diffusion barrier properties with minimal impact on line resistance. Dopant is introduced prior to metallization or after metallization. Dopant may be introduced by chemical vapor deposition on a liner layer at an elevated temperature prior to metallization, by chemical vapor deposition on a metal feature at an elevated temperature after metallization, or by electroless deposition on a copper feature after metallization. Application of elevated temperatures causes the metal interconnect structure to be doped and form a self-formed barrier layer or strengthen an existing diffusion barrier layer.

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