发明申请
WO2018220532A1 PASSIVATION MIXTURE AND SYSTEMS AND METHODS FOR SELECTIVELY PASSIVATING SUBSTRATE MATERIALS INCLUDING GERMANIUM OR TYPE III-IV MATERIALS USING THE PASSIVATION MIXTURE
审中-公开
基本信息:
- 专利标题： PASSIVATION MIXTURE AND SYSTEMS AND METHODS FOR SELECTIVELY PASSIVATING SUBSTRATE MATERIALS INCLUDING GERMANIUM OR TYPE III-IV MATERIALS USING THE PASSIVATION MIXTURE
- 申请号：PCT/IB2018/053820 申请日：2018-05-29
- 公开(公告)号：WO2018220532A1 公开(公告)日：2018-12-06
- 发明人： DICTUS, Dries
- 申请人： LAM RESEARCH AG , LAM RESEARCH CORPORATION
- 申请人地址： SEZ Strasse 1 A-9500 Villach AT
- 专利权人： LAM RESEARCH AG,LAM RESEARCH CORPORATION
- 当前专利权人： LAM RESEARCH AG,LAM RESEARCH CORPORATION
- 当前专利权人地址： SEZ Strasse 1 A-9500 Villach AT
- 代理机构： WIGGINS, Michael D.
- 优先权： US15/608,416 20170530
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/02 ; H01L21/56
摘要：
A liquid passivation mixture for passivating an outer layer of a substrate comprises a first material selected from group consisting of sulfur or selenium and a base selected from a group consisting of quaternary ammonium compound, sodium hydroxide (NaOH), potassium hydroxide (KOH), and amine.
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/28 | ....用H01L21/20至H01L21/268各组不包含的方法或设备在半导体材料上制造电极的 |