专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2007038054A3 APPARATUS FOR THE REMOVAL OF AN EDGE POLYMER FROM A SUBSTRATE AND METHODS THEREFOR 审中-公开
标题翻译：从基材上除去边缘聚合物的装置及其方法
公开(公告)号：WO2007038054A3
公开(公告)日：2007-05-31
申请号：PCT/US2006036323
申请日：2006-09-15
申请人： LAM RES CORP , YOON HYUNGSUK ALEXANDER , KIM YUNSANG , RYDER JASON A , BAILEY III ANDREW D
发明人： YOON HYUNGSUK ALEXANDER , KIM YUNSANG , RYDER JASON A , BAILEY III ANDREW D
IPC分类号： H01L21/203 , H01L21/461
CPC分类号： H01L21/02087 , H01J37/32541 , H01J37/3255 , H05H1/2406 , H05H2001/2412
摘要： An apparatus generating a plasma for removing an edge polymer from a substrate is disclosed. The embodiment includes a powered electrode assembly, including a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The embodiment also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated, the first wire mesh being shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, the cavity having an outlet at one end for providing the plasma to remove the edge polymer.
摘要翻译：公开了一种产生等离子体以从衬底去除边缘聚合物的设备。该实施例包括供电电极组件，该供电电极组件包括供电电极，第一介电层以及设置在供电电极和第一介电层之间的第一金属丝网。该实施例还包括与电源电极组件相对设置的接地电极组件，以便形成产生等离子体的空腔，当等离子体存在于空腔中时，第一电介质层被等离子体与等离子体屏蔽，腔在一端具有出口以提供等离子体以去除边缘聚合物。

2. 发明申请

WO2007038514A2 APPARATUS FOR THE REMOVAL OF A SET OF BYPRODUCTS FROM A SUBSTRATE EDGE AND METHODS THEREFOR 审中-公开
标题翻译：从基板边缘去除一组副产品的装置及其方法
公开(公告)号：WO2007038514A2
公开(公告)日：2007-04-05
申请号：PCT/US2006037492
申请日：2006-09-26
申请人： LAM RES CORP , KIM YUNSANG , BAILEY III ANDREW D , YOON HYUNGSUK ALEXANDER
发明人： KIM YUNSANG , BAILEY III ANDREW D , YOON HYUNGSUK ALEXANDER
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/02087 , H01J37/321 , H01J37/32623
摘要： A plasma processing system including a plasma chamber for processing a substrate is disclosed. The apparatus includes a chuck configured for supporting a first surface of the substrate. The apparatus also includes a plasma resistant barrier disposed in a spaced-apart relationship with respect to a second surface of the substrate, the second surface being opposite the first surface, the plasma resistant barrier substantially shielding a center portion of the substrate and leaving an annular periphery area of the second surface of the substrate substantially unshielded by the plasma resistant barrier. The apparatus further includes at least one powered electrode, the powered electrode operating cooperatively with the plasma resistant barrier to generate confined plasma from a plasma gas, the confined plasma being substantially confined to the annular periphery portion of the substrate and away from the center portion of the substrate.
摘要翻译：公开了一种包括用于处理衬底的等离子体室的等离子体处理系统。该装置包括配置用于支撑基板的第一表面的卡盘。该装置还包括等离子体阻挡屏障，其相对于衬底的第二表面以间隔开的关系设置，第二表面与第一表面相对，等离子体阻挡屏障基本上屏蔽衬底的中心部分并留下环形衬底的第二表面的周边区域基本上不受等离子体阻挡屏障的屏蔽。所述设备还包括至少一个动力电极，所述动力电极与所述等离子体阻挡屏障协同工作以从等离子体气体产生约束等离子体，所述受限等离子体基本上限制在所述衬底的所述环形周边部分并且远离所述衬底的中心部分底物。

3. 发明申请

WO2007038514B1 APPARATUS AND METHOD FOR SUBSTRATE EDGE ETCHING 审中-公开
标题翻译：用于基底边缘蚀刻的装置和方法
公开(公告)号：WO2007038514B1
公开(公告)日：2008-11-06
申请号：PCT/US2006037492
申请日：2006-09-26
申请人： LAM RES CORP , KIM YUNSANG , BAILEY III ANDREW D , YOON HYUNGSUK ALEXANDER
发明人： KIM YUNSANG , BAILEY III ANDREW D , YOON HYUNGSUK ALEXANDER
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/02087 , H01J37/321 , H01J37/32623
摘要： A plasma processing system including a plasma chamber for processing a substrate is disclosed. The apparatus includes a chuck configured for supporting a first surface of the substrate. The apparatus also includes a plasma resistant barrier disposed in a spaced-apart relationship with respect to a second surface of the substrate, the second surface being opposite the first surface, the plasma resistant barrier substantially shielding a center portion of the substrate and leaving an annular periphery area of the second surface of the substrate substantially unshielded by the plasma resistant barrier. The apparatus further includes at least one powered electrode, the powered electrode operating cooperatively with the plasma resistant barrier to generate confined plasma from a plasma gas, the confined plasma being substantially confined to the annular periphery portion of the substrate and away from the center portion of the substrate.
摘要翻译：公开了一种等离子体处理系统，其包括用于处理基板的等离子体室。该设备包括配置用于支撑衬底的第一表面的卡盘。所述设备还包括抗等离子体阻挡层，所述抗等离子体阻挡层相对于所述衬底的第二表面以间隔关系设置，所述第二表面与所述第一表面相对，所述抗等离子体阻挡层基本上屏蔽所述衬底的中心部分并留下环形衬底的第二表面的外围区域基本上未被等离子体阻挡屏障遮蔽。该装置还包括至少一个通电电极，该通电电极与抗等离子体阻挡层协同操作以从等离子体气体生成受限等离子体，该受限等离子体基本上被限制在衬底的环形周边部分并且远离衬底。

4. 发明申请

WO2007038030B1 APPARATUS FOR THE REMOVAL OF A FLUORINATED POLYMER FROM A SUBSTRATE AND METHODS THEREFOR 审中-公开
标题翻译：从底物中除去氟化聚合物的装置及其方法
公开(公告)号：WO2007038030B1
公开(公告)日：2008-01-24
申请号：PCT/US2006036139
申请日：2006-09-15
申请人： LAM RES CORP , YOON HYUNGSUK ALEXANDER , BOYD JOHN , KUTHI ANDRAS , BAILEY III ANDREW D
发明人： YOON HYUNGSUK ALEXANDER , BOYD JOHN , KUTHI ANDRAS , BAILEY III ANDREW D
IPC分类号： H01J7/24 , H01L21/302
CPC分类号： H01L21/02087 , B08B7/0035
摘要： An apparatus generating a plasma for removing fluorinated polymer from a substrate is disclosed. The embodiment includes a powered electrode assembly, including a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The embodiment also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated, the first wire mesh being shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, the cavity having an outlet at one end for providing the plasma to remove the fluorinated polymer.
摘要翻译：公开了一种从衬底生成用于除去氟化聚合物的等离子体的装置。该实施例包括动力电极组件，其包括供电电极，第一介电层和设置在电源电极和第一介电层之间的第一丝网。该实施例还包括与动力电极组件相对设置的接地电极组件，以便形成其中产生等离子体的空腔，当等离子体存在于空腔中时，第一电线网被第一电介质层与等离子体屏蔽，空腔在一端具有出口，用于提供等离子体以除去氟化聚合物。

5. 发明申请

WO2007038030A2 APPARATUS FOR THE REMOVAL OF A FLUORINATED POLYMER FROM A SUBSTRATE AND METHODS THEREFOR 审中-公开
标题翻译：从底物中除去氟化聚合物的装置及其方法
公开(公告)号：WO2007038030A2
公开(公告)日：2007-04-05
申请号：PCT/US2006036139
申请日：2006-09-15
申请人： LAM RES CORP , YOON HYUNGSUK ALEXANDER , BOYD JOHN , KUTHI ANDRAS , BAILEY III ANDREW D
发明人： YOON HYUNGSUK ALEXANDER , BOYD JOHN , KUTHI ANDRAS , BAILEY III ANDREW D
IPC分类号： H01L21/302 , G03C1/00 , H01L21/461
CPC分类号： H01L21/02087 , B08B7/0035
摘要： An apparatus generating a plasma for removing fluorinated polymer from a substrate is disclosed. The embodiment includes a powered electrode assembly, including a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The embodiment also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated, the first wire mesh being shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, the cavity having an outlet at one end for providing the plasma to remove the fluorinated polymer.
摘要翻译：公开了一种从衬底生成用于除去氟化聚合物的等离子体的装置。该实施例包括动力电极组件，其包括供电电极，第一介电层和设置在电源电极和第一介电层之间的第一丝网。该实施例还包括与动力电极组件相对设置的接地电极组件，以便形成其中产生等离子体的空腔，当空腔中存在等离子体时，第一电线网被第一介电层与等离子体屏蔽，空腔在一端具有出口，用于提供等离子体以除去氟化聚合物。

6. 发明申请

WO2011050062A3 METHOD FOR REPAIRING LOW-K DIELECTRIC DAMAGE 审中-公开
标题翻译：修复低K电介质损伤的方法
公开(公告)号：WO2011050062A3
公开(公告)日：2011-08-04
申请号：PCT/US2010053377
申请日：2010-10-20
申请人： LAM RES CORP , SIRARD STEPHEN M , TAKESHITA KENJI , BAILEY III ANDREW D
发明人： SIRARD STEPHEN M , TAKESHITA KENJI , BAILEY III ANDREW D
IPC分类号： H01L21/3105 , H01L21/311
CPC分类号： H01L21/3105 , H01L21/76814 , H01L21/76826
摘要： A method for repairing damage to a silicon based low-k dielectric layer with organic compounds, where damage replaces a methyl attached to silicon with a hydroxyl attached to silicon is provided. A repair gas comprising CH4 gas is provided. The repair gas is formed into a plasma, while maintaining a pressure below 50 mTorr. Hydroxyl attached to silicon is replaced with methyl from the plasma formed by the repair gas.
摘要翻译：提供了用有机化合物修复对基于硅的低k电介质层的损伤的方法，其中损伤用连接到硅上的羟基连接到硅上的甲基替代。提供了包含CH 4气体的修复气体。将修复气体形成为等离子体，同时保持低于50mTorr的压力。与由修复气体形成的等离子体中的甲基取代成硅的羟基。

7. 发明申请

WO2007005387A2 METHODS AND APPARATUS FOR OPTIMIZING AN ELECTRICAL RESPONSE TO A SET OF CONDUCTIVE LAYERS ON A SUBSTRATE 审中-公开
标题翻译：用于优化对衬底上一组导电层的电气响应的方法和装置
公开(公告)号：WO2007005387A2
公开(公告)日：2007-01-11
申请号：PCT/US2006024862
申请日：2006-06-28
申请人： LAM RES CORP , BAILEY III ANDREW D
发明人： BAILEY III ANDREW D
IPC分类号： G01B7/06
CPC分类号： G01B7/105
摘要： A method of determining a first thickness of a first conductive layer formed of a first conductive material on a target substrate, the target substrate further having a second conductive layer formed of a second conductive material different from the first conductive material, is disclosed. The method includes positioning a first eddy current sensor at a given position relative to the target substrate, the first eddy current sensor being in a spaced-apart relationship with respect to the target substrate when positioned at the given position. The method also includes measuring, using the first eddy current sensor while the first eddy current sensor is positioned at the give position, a first set of electrical responses that includes at least one of a first voltage measurement and a first current measurement, the measuring the first set of electrical responses being performed at a first target substrate temperature. The method further includes measuring, using the first eddy current sensor while the first eddy current sensor is positioned at the given position, a second set of electrical responses that includes at least one of a second voltage measurement and a second current measurement, the measuring the second set of electrical responses being performed at a second target substrate temperature different from the first target substrate temperature. The method also includes calculating a third set of electrical responses using at least the first set of electrical responses and the second set of electrical responses, and a first temperature coefficient of the first conductive layer, the third set of electrical responses representing responses substantially attributable to the first conductive layer; and determining the first thickness from the third set of electrical responses.
摘要翻译：公开了一种确定由目标衬底上的第一导电材料形成的第一导电层的第一厚度的方法，所述目标衬底还具有由不同于所述第一导电材料的第二导电材料形成的第二导电层。该方法包括将第一涡流传感器定位在相对于目标衬底的给定位置处，当定位在给定位置时，第一涡流传感器相对于目标衬底处于间隔开的关系。该方法还包括在第一涡流传感器位于给定位置时测量使用第一涡流传感器的第一组电响应，其包括第一电压测量和第一电流测量中的至少一个，测量在第一目标衬底温度下执行第一组电响应。该方法还包括在第一涡流传感器位于给定位置时使用第一涡流传感器来测量包括第二电压测量和第二电流测量中的至少一个的第二组电响应，在与第一目标衬底温度不同的第二目标衬底温度下执行第二组电响应。该方法还包括使用至少第一组电响应和第二组电响应来计算第三组电响应，以及第一导电层的第一温度系数，第三组电响应表示基本上归因于第一导电层; 以及从所述第三组电响应确定所述第一厚度。

8. 发明申请

WO2013036371A2 PULSED PLASMA CHAMBER IN DUAL CHAMBER CONFIGURATION 审中-公开
标题翻译：双室配置中的脉冲等离子体室
公开(公告)号：WO2013036371A2
公开(公告)日：2013-03-14
申请号：PCT/US2012051460
申请日：2012-08-17
申请人： LAM RES CORP , MARAKHTANOV ALEXEI , DHINDSA RAJINDER , HUDSON ERIC , BAILEY III ANDREW D
发明人： MARAKHTANOV ALEXEI , DHINDSA RAJINDER , HUDSON ERIC , BAILEY III ANDREW D
IPC分类号： H01L21/3065 , C23F1/08 , H01L21/306
CPC分类号： H01J37/32146 , H01J37/32091 , H01J37/32825 , H01J2237/3341 , H01L21/31116 , H01L21/67069
摘要： Systems, methods, and computer programs for processing a semiconductor substrate in a pulsed plasma chamber in a dual chamber configuration are provided. A wafer processing apparatus with a top chamber and a bottom chamber separated by a plate that fluidly connects the top chamber to the bottom chamber includes a continuous wave (CW) controller, a pulse controller, and a system controller. The CW controller is operable to set the voltage and the frequency for a first radio frequency (RF) power source coupled to a top electrode in the top chamber. The pulse controller is operable to set voltage, frequency, ON-period duration, and OFF-period duration for a pulsed RF signal generated by a second RF power source coupled to the bottom electrode in the bottom chamber. Further, the system controller is operable to set parameters for the CW controller and the pulse controller to regulate the flow of species from the top chamber to the bottom chamber through the plate during operation of the chamber. The flow of species assists in the negative-ion etching and in neutralizing excessive positive charge on the wafer surface during afterglow in the OFF period, and assists in the re- striking of the plasma in the bottom chamber during the ON period.
摘要翻译：提供了用于在双室配置中处理脉冲等离子体室中的半导体衬底的系统，方法和计算机程序。具有通过将顶部腔室与底部腔室流体连接的板分隔开的顶部腔室和底部腔室的晶片处理装置包括连续波（CW）控制器，脉冲控制器和系统控制器。 CW控制器可操作地设置耦合到顶部室中顶部电极的第一射频（RF）电源的电压和频率。脉冲控制器可操作地为耦合到底部室中的底部电极的第二RF电源产生的脉冲RF信号设置电压，频率，接通周期持续时间和关闭周期持续时间。此外，系统控制器可操作以设置CW控制器和脉冲控制器的参数，以调节在室的操作期间物种从顶室到底室通过板的流动。物质的流动有助于负离子蚀刻，并且在关闭期间在余辉期间中和晶片表面上的过量正电荷，并且有助于在接通期间等离子体在底室中的重新打开。

9. 发明申请

WO2009043018A3 OFFSET CORRECTION TECHNIQUES FOR POSITIONING SUBSTRATES WITHIN A PROCESSING CHAMBER 审中-公开
标题翻译：用于在加工室中定位基板的偏移校正技术
公开(公告)号：WO2009043018A3
公开(公告)日：2009-09-11
申请号：PCT/US2008078145
申请日：2008-09-29
申请人： LAM RES CORP , CHEN JACK , BAILEY III ANDREW D , MOORING BEN , CAIN STEPHEN J
发明人： CHEN JACK , BAILEY III ANDREW D , MOORING BEN , CAIN STEPHEN J
IPC分类号： H01L21/68 , H01L21/3065 , H01L21/677 , H01L21/683 , H01L21/687
CPC分类号： H01L21/681 , H01L21/68
摘要： A method for aligning a substrate to a process center of a support mechanism is provided. The method includes determining substrate thickness after substrate processing at a plurality of orientations and at a plurality of radial distances from a geometric center of the substrate. The method also includes deriving a set of process rate values from substrate thickness and process duration. The method further includes creating for a process rate an off-centered plot, which represents a substantially concentric circle whose points are a circumference of the off-centered plot having substantially the first process rate. The method yet also includes applying a curve-fitting equation to the off-centered plot to determine a set of parameters. The method yet further includes teaching a set of robot arms the set of parameters, thereby enabling the set of robot arms to align another substrate that is supported by the support mechanism with the process center.
摘要翻译：提供了一种将基板对准支撑机构的处理中心的方法。该方法包括在基板处理之后确定基板厚度，该基板在多个取向并且距离基板的几何中心的多个径向距离处。该方法还包括从衬底厚度和工艺持续时间导出一组工艺速率值。该方法还包括为处理速率创建偏心图，其表示基本上同心的圆，其点是具有基本上第一处理速率的偏心图的圆周。该方法还包括将曲线拟合方程应用于偏心图以确定一组参数。该方法还包括向一组机器人手臂提供该组参数，从而使得该组机器人臂将由支撑机构支撑的另一基板与处理中心对准。

10. 发明申请

WO2013070472A3 SYSTEM, METHOD AND APPARATUS FOR PLASMA SHEATH VOLTAGE CONTROL 审中-公开
标题翻译：用于等离子体电压控制的系统，方法和装置
公开(公告)号：WO2013070472A3
公开(公告)日：2015-06-11
申请号：PCT/US2012062867
申请日：2012-10-31
申请人： LAM RES CORP
发明人： MARAKHTANOV ALEXEI , DHINDSA RAJINDER , HUDSON ERIC , BAILEY III ANDREW D
IPC分类号： C23C14/34
CPC分类号： H01J37/32091 , H01J37/32165 , H01J37/32174
摘要： A system, method and apparatus for increasing an energy level of the ions emitted from a plasma include a plasma chamber, including a top electrode and a bottom electrode, a multiple RF sources, at least one of the RF sources being coupled to the bottom electrode. A phase locking circuit is coupled to at least two of the RF sources hereafter designated the first RF source and the second RF source. A controller is coupled to the plasma chamber, each of the RF sources and the phase locking circuit. The controller including operating system software, multiple logic circuits and a process recipe.
摘要翻译：用于增加从等离子体发射的离子的能量水平的系统，方法和装置包括等离子体室，包括顶部电极和底部电极，多个RF源，至少一个RF源耦合到底部电极。相位锁定电路耦合到以下称为第一RF源和第二RF源的至少两个RF源。控制器耦合到等离子体室，每个RF源和锁相电路。该控制器包括操作系统软件，多个逻辑电路和一个过程配方。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式