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1. 发明申请

WO2011133207A3 A COATING METHOD FOR GAS DELIVERY SYSTEM 审中-公开
标题翻译：一种气体输送系统的涂装方法
公开(公告)号：WO2011133207A3
公开(公告)日：2012-02-23
申请号：PCT/US2011000683
申请日：2011-04-15
申请人： LAM RES CORP , KENWORTHY IAN , OUTKA DUANE , HAO FANGLI , SHARPLESS LEONARD , DU YIJUN
发明人： KENWORTHY IAN , OUTKA DUANE , HAO FANGLI , SHARPLESS LEONARD , DU YIJUN
IPC分类号： C23C16/50 , H01L21/205 , H05H1/46
CPC分类号： F17D5/005 , B05D1/30 , B05D7/222 , F17D1/04 , H01J37/3244 , H01J37/32495 , H01J2237/3341 , H01L21/67069 , Y10T137/8593
摘要： A method of coating the inner surfaces of gas passages of a gas delivery system for a plasma process system such as a plasma etching system includes (a) flowing a fluidic precursor of a corrosion-resistant material through the gas passages and depositing a layer of the fluidic precursor to completely coat the inner surfaces of the gas passages; (b) removing excess fluidic precursor from the inner surfaces; (c) curing the deposited layer of the fluidic precursor to form a corrosion-resistant material coating.
摘要翻译：涂覆等离子体处理系统例如等离子体蚀刻系统的气体输送系统的气体通道的内表面的方法包括（a）使耐腐蚀材料的流体前体流过气体通道并沉积一层流体前体，以完全涂覆气体通道的内表面; （b）从内表面除去多余的流体前体; （c）固化流体前体的沉积层以形成耐腐蚀材料涂层。

2. 发明申请

WO2010002724A2 PERIPHERALLY ENGAGING ELECTRODE CARRIERS AND ASSEMBLIES INCORPORATING THE SAME 审中-公开
标题翻译：外围接触电极载体和组装体
公开(公告)号：WO2010002724A2
公开(公告)日：2010-01-07
申请号：PCT/US2009048797
申请日：2009-06-26
申请人： LAM RES CORP , AUGUSTINO JASON , AVOYAN ARMEN , FANG YAN , OUTKA DUANE , SHIH HONG , WHITTEN STEPHEN
发明人： AUGUSTINO JASON , AVOYAN ARMEN , FANG YAN , OUTKA DUANE , SHIH HONG , WHITTEN STEPHEN
IPC分类号： H05H1/34
CPC分类号： H01J37/32541 , H01J37/32009 , H01J37/32605 , H01L21/67069
摘要： In accordance with one embodiment of the present disclosure, an assembly is provided comprising a multi-component electrode and a peripherally engaging electrode carrier. The peripherally engaging electrode carrier comprises a carrier frame and a plurality of reciprocating electrode supports. The multi-component electrode is positioned in the electrode accommodating aperture of the carrier frame. The backing plate of the electrode comprises a plurality of mounting recesses formed about its periphery. The reciprocating electrode supports can be reciprocated into and out of the mounting recesses. Additional embodiments of broader and narrower scope are contemplated.
摘要翻译：根据本公开的一个实施例，提供了包括多组分电极和外围接合电极载体的组件。外围接合电极载体包括载体框架和多个往复电极支撑件。多组分电极位于载体框架的电极容纳孔中。电极的背板包括围绕其周边形成的多个安装凹部。往复式电极支撑件可以往复运动进入和离开安装凹槽。考虑到更广泛和更窄范围的另外的实施例。

3. 发明申请

WO2012061362A3 ELECTRODE SECURING PLATENS AND ELECTRODE POLISHING ASSEMBLIES INCORPORATING THE SAME 审中-公开
标题翻译：电极固定平板和电极抛光组件并入其中
公开(公告)号：WO2012061362A3
公开(公告)日：2012-09-07
申请号：PCT/US2011058745
申请日：2011-11-01
申请人： LAM RES CORP , LA CROIX CLIFF , AVOYAN ARMEN , OUTKA DUANE , ZHOU CATHERINE , SHIH HONG
发明人： LA CROIX CLIFF , AVOYAN ARMEN , OUTKA DUANE , ZHOU CATHERINE , SHIH HONG
IPC分类号： H01L21/304
CPC分类号： B24B37/30 , B24B41/061
摘要： In one embodiment, an electrode polishing assembly may include an electrode securing platen, a plurality of electrode locating fasteners, and an electrode. Each of the electrode locating fasteners may include an electrode spacing shoulder, a variance cancelling shoulder extending from the electrode spacing shoulder, a threaded platen clamping portion extending from the variance cancelling shoulder, and a threaded nut that engages the threaded platen clamping portion. The electrode locating fasteners clamp the electrode securing platen between the threaded nut and the electrode spacing shoulder. The variance cancelling shoulder is at least partially within one of a plurality of variance cancelling passages of the electrode securing platen. A minimum position stack-up is equal to a minimum passage size minus a maximum shoulder size. A maximum position stack-up is equal to a maximum passage size minus a minimum shoulder size. The maximum position stack-up is greater than the minimum position stack-up.
摘要翻译：在一个实施例中，电极抛光组件可以包括电极固定台板，多个电极定位紧固件和电极。每个电极定位紧固件可以包括电极间隔肩部，从电极间隔肩部延伸的变化抵消肩部，从变化抵消肩部延伸的螺纹压板夹紧部分以及与螺纹压板夹紧部分接合的螺纹螺母。电极定位紧固件将电极固定板夹紧在螺母和电极间隔肩之间。方差消除肩部至少部分在电极固定台板的多个方差消除通道中的一个之内。最小位置叠加等于最小通道尺寸减去最大肩部尺寸。最大位置叠加等于最大通道尺寸减去最小肩部尺寸。最大位置叠加大于最小位置叠加。

4. 发明申请

WO2010068753A2 IMMERSIVE OXIDATION AND ETCHING PROCESS FOR CLEANING SILICON ELECTRODES 审中-公开
标题翻译：用于清洁硅电极的强力氧化和蚀刻工艺
公开(公告)号：WO2010068753A2
公开(公告)日：2010-06-17
申请号：PCT/US2009067495
申请日：2009-12-10
申请人： LAM RES CORP , ZHOU CATHERINE , OUTKA DUANE , AVOYAN ARMEN , SHIH HONG
发明人： ZHOU CATHERINE , OUTKA DUANE , AVOYAN ARMEN , SHIH HONG
IPC分类号： H05H1/34 , H05H1/42
CPC分类号： B24B41/06 , B08B3/08 , B08B3/12 , C11D7/08 , C11D7/261 , C11D7/265 , C11D11/0047
摘要： A process for cleaning a silicon electrode is provided where the silicon electrode is soaked in an agitated aqueous detergent solution and rinsed with water following removal from the aqueous detergent solution. The rinsed silicon electrode is then soaked in an agitated isopropyl alcohol (IPA) solution and rinsed. The silicon electrode is then subjected to an ultrasonic cleaning operation in water following removal from the IPA solution. Contaminants are then removed from the silicon electrode by soaking the silicon electrode in an agitated mixed acid solution comprising hydrofluoric acid, nitric acid, acetic acid, and water. The silicon electrode is subjected to an additional ultrasonic cleaning operation following removal from the mixed acid solution and is subsequently rinsed and dried. In other embodiments of the present disclosure, it is contemplated that the silicon electrode can be soaked in either the agitated aqueous detergent solution, the agitated isopropyl alcohol (IPA) solution, or both. Additional embodiments are contemplated, disclosed, and claimed.
摘要翻译：提供一种清洁硅电极的方法，其中硅电极浸泡在搅拌的含水洗涤剂溶液中，并且在从洗涤剂水溶液中除去之后用水漂洗。然后将冲洗的硅电极浸泡在搅拌的异丙醇（IPA）溶液中并漂洗。然后在从IPA溶液中除去之后，将硅电极进行超声波清洗操作。然后通过将硅电极浸入包含氢氟酸，硝酸，乙酸和水的搅拌的混合酸溶液中从硅电极中除去污染物。在从混合酸溶液中除去之后，对硅电极进行附加的超声波清洗操作，随后漂洗并干燥。在本公开的其它实施例中，预期硅电极可以浸泡在搅拌的含水洗涤剂溶液，搅拌的异丙醇（IPA）溶液中或两者中。额外的实施例被设想，公开和要求保护。

5. 发明申请

WO2010002631A2 PROCESSES FOR RECONDITIONING MULTI-COMPONENT ELECTRODES 审中-公开
标题翻译：用于重新组装多组分电极的方法
公开(公告)号：WO2010002631A2
公开(公告)日：2010-01-07
申请号：PCT/US2009048244
申请日：2009-06-23
申请人： LAM RES CORP , AVOYAN ARMEN , FANG YAN , OUTKA DUANE , SHIH HONG , WHITTEN STEPHEN
发明人： AVOYAN ARMEN , FANG YAN , OUTKA DUANE , SHIH HONG , WHITTEN STEPHEN
IPC分类号： H05H1/34
CPC分类号： H01J37/32862 , H01J37/32559
摘要： A process for reconditioning a multi-component electrode comprising a silicon electrode bonded to an electrically conductive backing plate is provided. The process comprises: (i) removing metal ions from the multi-component electrode by soaking the multi-component electrode in a substantially alcohol-free DSP solution comprising sulfuric acid, hydrogen peroxide, and water and rinsing the multi-component electrode with de-ionized water; (ii) polishing one or more surfaces of the multi-component electrode following removal of metal ions there from; and (iii) removing contaminants from silicon surfaces of the multi-component electrode by treating the polished multi-component electrode with a mixed acid solution comprising hydrofluoric acid, nitric acid, acetic acid, and water and by rinsing the treated multi-component electrode with de-ionized water. Additional embodiments of broader and narrower scope are contemplated.
摘要翻译：提供了一种用于再生多组分电极的方法，其包括结合到导电背板的硅电极。该方法包括：（i）通过将多组分电极浸入含有硫酸，过氧化氢和水的基本上不含醇的DSP溶液中并从而从多组分电极中除去金属离子，并用去离子水冲洗多组分电极，电离水; （ii）在从其去除金属离子之后抛光多组分电极的一个或多个表面; 和（iii）通过用包含氢氟酸，硝酸，乙酸和水的混合酸溶液处理抛光的多组分电极，并通过用处理过的多组分电极进行漂洗来处理多组分电极的硅表面的污染物去离子水。考虑到更广泛和更窄范围的另外的实施例。

6. 发明申请

WO2010068752A2 PLATEN AND ADAPTER ASSEMBLIES FOR FACILITATING SILICON ELECTRODE POLISHING 审中-公开
标题翻译：用于促进硅电极抛光的平板和适配器组件
公开(公告)号：WO2010068752A2
公开(公告)日：2010-06-17
申请号：PCT/US2009067494
申请日：2009-12-10
申请人： LAM RES CORP , AVOYAN ARMEN , OUTKA DUANE , ZHOU CATHERINE , SHIH HONG
发明人： AVOYAN ARMEN , OUTKA DUANE , ZHOU CATHERINE , SHIH HONG
IPC分类号： H01L21/304
CPC分类号： B24B41/06 , B08B3/08 , B08B3/12 , C11D7/08 , C11D7/261 , C11D7/265 , C11D11/0047
摘要： A process is provided for polishing a silicon electrode utilizing a polishing turntable and a dual function electrode platen. The dual function electrode platen is secured to the polishing turntable and comprises a plurality of electrode mounts arranged to project from an electrode engaging face of the dual function electrode platen. The electrode mounts complement respective positions of mount receptacles formed in a platen engaging face of the silicon electrode to be polished. The electrode mounts and the mount receptacles are configured to permit non-destructive engagement and disengagement of the electrode engaging face of the electrode platen and the platen engaging face of the silicon electrode. The dual function electrode platen further comprises platen adapter abutments positioned radially inward of the electrode mounts. The platen adapter abutments are configured to bring a platen adapter into approximate alignment with the rotary polishing axis. The silicon electrode is polished by (i) engaging the electrode engaging face of the electrode platen and the platen engaging face of the silicon electrode via the electrode mounts and mount receptacles, (ii) utilizing the polishing turntable to impart rotary motion to the engaged silicon electrode, and (iii) contacting an exposed face of the silicon electrode with a polishing surface as the silicon electrode rotates about the rotary polishing axis. Additional embodiments are contemplated, disclosed and claimed.
摘要翻译：提供了一种利用抛光转台和双功能电极台板来抛光硅电极的工艺。双功能电极压板固定在抛光转台上，并且包括多个电极安装件，该电极安装件设置成从双功能电极板的电极接合面突出。电极安装件补充形成在待抛光的硅电极的压板接合面中的安装座的相应位置。电极安装件和安装座被构造成允许电极压板的电极接合面和硅电极的压板接合面的非破坏性接合和脱离。双功能电极板还包括定位在电极支架径向内侧的台板适配器支座。台板适配器基台配置为使台板适配器与旋转抛光轴大致对齐。通过（i）经由电极安装座和安装座将电极台板的电极接合面与硅电极的台板接合面接合，（ii）利用抛光转台将旋转运动赋予接合的硅以及（iii）当硅电极围绕旋转抛光轴旋转时，使硅电极的暴露面与抛光表面接触。其他实施例被考虑，公开和要求保护。

7. 发明申请

WO2010002722A2 BACKSIDE MOUNTED ELECTRODE CARRIERS AND ASSEMBLIES INCORPORATING THE SAME 审中-公开
标题翻译：背面安装的电极载体和装配的装置
公开(公告)号：WO2010002722A2
公开(公告)日：2010-01-07
申请号：PCT/US2009048794
申请日：2009-06-26
申请人： LAM RES CORP , AUGUSTINO JASON , AVOYAN ARMEN , FANG YAN , OUTKA DUANE , SHIH HONG , WHITTEN STEPHEN
发明人： AUGUSTINO JASON , AVOYAN ARMEN , FANG YAN , OUTKA DUANE , SHIH HONG , WHITTEN STEPHEN
IPC分类号： H05H1/38 , H05H1/24 , H05H1/34
CPC分类号： H01J37/32568 , H01J37/32091 , H01J37/32605
摘要： A carrier assembly is provided comprising a backside mounted electrode carrier and electrode mounting hardware. The backside mounted electrode carrier comprises an electrode accommodating aperture, which in turn comprises a sidewall structure that is configured to limit lateral movement of an electrode positioned in the aperture. The electrode accommodating aperture further comprises one or more sidewall projections that support the weight of an electrode positioned in the aperture. The electrode mounting hardware is configured to engage an electrode positioned in the electrode accommodating aperture from the backside of the carrier and urge the electrode against the sidewall projections so as to limit axial movement of the electrode in the electrode accommodating aperture. Additional embodiments of broader and narrower scope are contemplated.
摘要翻译：提供的载体组件包括背面安装的电极载体和电极安装硬件。背面安装的电极载体包括电极容纳孔，电极容纳孔又包括被配置为限制位于孔中的电极的横向移动的侧壁结构。电极容纳孔还包括支撑位于孔中的电极的重量的一个或多个侧壁突起。电极安装硬件被配置成从位于载体的背面的电极容纳孔中的电极接合，并且将电极推向侧壁突起，以限制电极在电极容纳孔中的轴向移动。考虑到更广泛和更窄范围的另外的实施例。

8. 发明申请

WO2005123282A2 METHODS FOR WET CLEANING QUARTZ SURFACES OF COMPONENTS FOR PLASMA PROCESSING CHAMBERS 审中-公开
标题翻译：用于等离子体处理室的组件的清洁清洗表面的方法
公开(公告)号：WO2005123282A2
公开(公告)日：2005-12-29
申请号：PCT/US2005019466
申请日：2005-06-03
申请人： LAM RES CORP , SHIH HONG , HUANG TUOCHUAN , OUTKA DUANE , KUO JACK , LIU SHENJIAN , MOREL BRUNO , CHEN ANTHONY
发明人： SHIH HONG , HUANG TUOCHUAN , OUTKA DUANE , KUO JACK , LIU SHENJIAN , MOREL BRUNO , CHEN ANTHONY
IPC分类号： B08B3/12 , C23C16/00 , C23C16/44
CPC分类号： C23C16/4407 , H01J37/32862
摘要： Methods for wet cleaning quartz surfaces of components for plasma processing chambers in which semiconductor substrates are processed, such as etch chambers and resist stripping chambers, include contacting the quartz surface with at least one organic solvent, a basic solution and different acid solutions, so as to remove organic and metallic contaminants from the quartz surface. The quartz surface is preferably contacted with one of the acid solutions at least two times.
摘要翻译：用于湿处理其中处理半导体衬底的等离子体处理室的部件的石英表面的方法，例如蚀刻室和抗蚀剂剥离室，包括使石英表面与至少一种有机溶剂，碱性溶液和不同的酸溶液接触，以便以从石英表面去除有机和金属污染物。石英表面优选与一种酸溶液接触至少两次。

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