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1. 发明申请

WO2005123282A3 METHODS FOR WET CLEANING QUARTZ SURFACES OF COMPONENTS FOR PLASMA PROCESSING CHAMBERS 审中-公开
公开(公告)号：WO2005123282A3
公开(公告)日：2005-12-29
申请号：PCT/US2005/019466
申请日：2005-06-03
申请人： LAM RESEARCH CORPORATION , SHIH, Hong , HUANG, Tuochuan , OUTKA, Duane , KUO, Jack , LIU, Shenjian , MOREL, Bruno , CHEN, Anthony
发明人： SHIH, Hong , HUANG, Tuochuan , OUTKA, Duane , KUO, Jack , LIU, Shenjian , MOREL, Bruno , CHEN, Anthony
IPC分类号： C23G1/02 , B08B3/00 , B08B3/04 , B08B3/14
摘要： Methods for wet cleaning quartz surfaces of components for plasma processing chambers in which semiconductor substrates are processed, such as etch chambers and resist stripping chambers, include contacting the quartz surface with at least one organic solvent, a basic solution and different acid solutions, so as to remove organic and metallic contaminants from the quartz surface. The quartz surface is preferably contacted with one of the acid solutions at least two times.

2. 发明申请

WO2006060234A3 WET CLEANING OF ELECTROSTATIC CHUCKS 审中-公开
标题翻译：静电清洁剂的清洁
公开(公告)号：WO2006060234A3
公开(公告)日：2006-07-20
申请号：PCT/US2005042294
申请日：2005-11-21
申请人： LAM RES CORP , SHIH HONG , HUANG TUOCHUAN , ZHOU CATHERINE , MOREL BRUNO , MCMILLIN BRIAN , MULGREW PAUL , AVOYAN ARMEN
发明人： SHIH HONG , HUANG TUOCHUAN , ZHOU CATHERINE , MOREL BRUNO , MCMILLIN BRIAN , MULGREW PAUL , AVOYAN ARMEN
IPC分类号： B08B3/12 , B08B3/00 , B08B3/10 , B08B3/14 , B08B5/00 , B08B6/00 , B08B7/00 , B08B7/02 , C23G1/02
CPC分类号： H01L21/6831 , B08B3/12 , H01L21/6704
摘要： A non-destructive and simple method for cleaning a new or used electrostatic chuck comprises a wet cleaning process, which removes contaminants deposited on a surface of the electrostatic chuck.
摘要翻译：用于清洁新的或使用过的静电卡盘的非破坏性和简单的方法包括湿式清洁工艺，其去除沉积在静电卡盘的表面上的污染物。

3. 发明申请

WO2005123282A2 METHODS FOR WET CLEANING QUARTZ SURFACES OF COMPONENTS FOR PLASMA PROCESSING CHAMBERS 审中-公开
标题翻译：用于等离子体处理室的组件的清洁清洗表面的方法
公开(公告)号：WO2005123282A2
公开(公告)日：2005-12-29
申请号：PCT/US2005019466
申请日：2005-06-03
申请人： LAM RES CORP , SHIH HONG , HUANG TUOCHUAN , OUTKA DUANE , KUO JACK , LIU SHENJIAN , MOREL BRUNO , CHEN ANTHONY
发明人： SHIH HONG , HUANG TUOCHUAN , OUTKA DUANE , KUO JACK , LIU SHENJIAN , MOREL BRUNO , CHEN ANTHONY
IPC分类号： B08B3/12 , C23C16/00 , C23C16/44
CPC分类号： C23C16/4407 , H01J37/32862
摘要： Methods for wet cleaning quartz surfaces of components for plasma processing chambers in which semiconductor substrates are processed, such as etch chambers and resist stripping chambers, include contacting the quartz surface with at least one organic solvent, a basic solution and different acid solutions, so as to remove organic and metallic contaminants from the quartz surface. The quartz surface is preferably contacted with one of the acid solutions at least two times.
摘要翻译：用于湿处理其中处理半导体衬底的等离子体处理室的部件的石英表面的方法，例如蚀刻室和抗蚀剂剥离室，包括使石英表面与至少一种有机溶剂，碱性溶液和不同的酸溶液接触，以便以从石英表面去除有机和金属污染物。石英表面优选与一种酸溶液接触至少两次。

4. 发明申请

WO2005029553A3 METHODS FOR CLEANING A SET OF STRUCTURES COMPRISING YTTRIUM OXIDE IN A PLASMA PROCESSING SYSTEM 审中-公开
标题翻译：在等离子体处理系统中清除一系列包含氧化亚铁的结构的方法
公开(公告)号：WO2005029553A3
公开(公告)日：2005-07-21
申请号：PCT/US2004030430
申请日：2004-09-16
申请人： LAM RES CORP , SHIH HONG , CHEN ANTHONY L , TAN SOK KIOW , HWANG STEPHEN , DAUGHERTY JOHN , MOREL BRUNO
发明人： SHIH HONG , CHEN ANTHONY L , TAN SOK KIOW , HWANG STEPHEN , DAUGHERTY JOHN , MOREL BRUNO
IPC分类号： B08B3/00 , B08B6/00 , B08B7/00 , B08B9/00 , B44C1/22 , C23G1/00 , C23G1/02 , H01L20060101
CPC分类号： H01J37/32431 , H01J2237/335
摘要： A method of removing a set of particles from a set of structures including yttrium oxide is disclosed. The method includes exposing the set of structures to a first solution including an oxidizer for a first period. The method also includes removing the set of structures from the first solution, and exposing the set of structures to a second solution including a keytone reagent for a second period. The method further includes removing the set of structures from the second solution, and mechanically rubbing the set of structures with a third solution including a first set of acids for a third period.
摘要翻译：公开了从包括氧化钇的一组结构中去除一组颗粒的方法。该方法包括将该组结构暴露于包括第一期间的氧化剂的第一溶液。该方法还包括从第一解决方案中移除该组结构，以及将该组结构暴露于包括第二期间的键控试剂的第二溶液。所述方法还包括从所述第二溶液中去除所述一组结构，并且在第三周期内用包含第一组酸的第三溶液机械地摩擦所述一组结构。

5. 发明申请

WO2005029553A2 METHODS FOR CLEANING A SET OF STRUCTURES COMPRISING YTTRIUM OXIDE IN A PLASMA PROCESSING SYSTEM 审中-公开
标题翻译：在等离子体处理系统中清洁包含氧化钇的一组结构的方法
公开(公告)号：WO2005029553A2
公开(公告)日：2005-03-31
申请号：PCT/US2004/030430
申请日：2004-09-16
申请人： LAM RESEARCH CORPORATION , SHIH, Hong , CHEN, Anthony, L. , TAN, Sok, Kiow , HWANG, Stephen , DAUGHERTY, John , MOREL, Bruno
发明人： SHIH, Hong , CHEN, Anthony, L. , TAN, Sok, Kiow , HWANG, Stephen , DAUGHERTY, John , MOREL, Bruno
IPC分类号： H01L
CPC分类号： H01J37/32431 , H01J2237/335
摘要： A method of removing a set of particles from a set of structures including yttrium oxide is disclosed. The method includes exposing the set of structures to a first solution including an oxidizer for a first period. The method also includes removing the set of structures from the first solution, and exposing the set of structures to a second solution including a keytone reagent for a second period. The method further includes removing the set of structures from the second solution, and mechanically rubbing the set of structures with a third solution including a first set of acids for a third period.
摘要翻译：公开了从包括氧化钇的一组结构中去除一组颗粒的方法。该方法包括将该组结构暴露于包含氧化剂的第一溶液达第一时间段。该方法还包括从第一溶液移除该组结构，并且将该组结构暴露于包含第二时间段的基础试剂的第二溶液。该方法进一步包括从第二溶液中去除该组结构，并且用包含第一组酸的第三溶液机械摩擦该组结构达第三时间段。

6. 发明申请

WO0215236A3 WAFER AREA PRESSURE CONTROL 审中-公开
标题翻译： WAFER AREA压力控制
公开(公告)号：WO0215236A3
公开(公告)日：2003-09-04
申请号：PCT/US0124103
申请日：2001-07-31
申请人： LAM RES CORP , HAO FANGLI , LENZ ERIC , MOREL BRUNO
发明人： HAO FANGLI , LENZ ERIC , MOREL BRUNO
IPC分类号： H01L21/3065 , H01J37/32
CPC分类号： H01J37/32449 , H01J37/32623
摘要： A plasma processing chamber is provided which provides improved wafer area pressure control. The plasma processing chamber is a vacuum chamber with a device connected for generating and sustaining a plasma. Part of this device would be an etchant gas source and an exhaust port. A confinement ring defines an area above a wafer. The wafer area pressure is dependent on the pressure drop across the confinement ring. The confinement ring is part of a confinement device that provides wafer area pressure control greater than 40 %. Such a confinement device may be a fixed vertical restriction ring in addition to the confinement ring, where the confinement ring is adjustable. In the alternative, three adjustable confinement rings may be used to provide the desired wafer area pressure control.
摘要翻译：提供等离子体处理室，其提供改进的晶片面积压力控制。等离子体处理室是具有连接用于产生和维持等离子体的装置的真空室。该装置的一部分将是蚀刻剂气源和排气口。限制环限定晶片上方的区域。晶片面积压力取决于限制环上的压降。限制环是限制装置的一部分，其提供超过40％的晶片面积压力控制。除了限制环之外，这种限制装置可以是固定的垂直限制环，其中限制环是可调节的。在替代方案中，可以使用三个可调约束环来提供期望的晶片面积压力控制。

7. 发明申请

WO2006060234A2 WET CLEANING OF ELECTROSTATIC CHUCKS 审中-公开
标题翻译：电除尘器的湿清洗
公开(公告)号：WO2006060234A2
公开(公告)日：2006-06-08
申请号：PCT/US2005/042294
申请日：2005-11-21
申请人： LAM RESEARCH CORPORATION , SHIH, Hong , HUANG, Tuochuan , ZHOU, Catherine , MOREL, Bruno , MCMILLIN, Brian , MULGREW, Paul , AVOYAN, Armen
发明人： SHIH, Hong , HUANG, Tuochuan , ZHOU, Catherine , MOREL, Bruno , MCMILLIN, Brian , MULGREW, Paul , AVOYAN, Armen
IPC分类号： B08B3/12 , B08B3/00 , B08B5/00 , B08B3/10 , C23G1/02 , B08B7/00
CPC分类号： H01L21/6831 , B08B3/12 , H01L21/6704
摘要： A non-destructive and simple method for cleaning a new or used electrostatic chuck comprises a wet cleaning process, which removes contaminants deposited on a surface of the electrostatic chuck.
摘要翻译：用于清洁新的或使用过的静电吸盘的非破坏性且简单的方法包括湿式清洁过程，其去除沉积在静电吸盘表面上的污染物。

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