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1. 发明申请

WO2002103696A2 APPARATUS FOR REPRODUCING A DIGITAL INFORMATION SIGNAL 审中-公开
标题翻译：用于复制数字信息信号的装置
公开(公告)号：WO2002103696A2
公开(公告)日：2002-12-27
申请号：PCT/IB2002/002326
申请日：2002-06-18
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , POZIDIS, Charalampos , COENE, Willem, M., J., M. , BERGMANS, Johannes, W., M.
发明人： POZIDIS, Charalampos , COENE, Willem, M., J., M. , BERGMANS, Johannes, W., M.
IPC分类号： G11B20/10
CPC分类号： G11B20/10333 , G11B20/10009
摘要： Domain bloom, also known as asymmetry, is a systematic imperfection caused by the writing process in optical discs. During disc read-out it causes signal transitions to shift with respect to their nominal positions. State-of-the-art equalization and detection methods suffer significant performance losses if directly applied to replay signals with asymmetry. A non-linear model for replay signals with asymmetry is used for new equalization and detection techniques that are applicable to signals in the presence of asymmetry. Modifications are described of the threshold bit-detector, the run-length pushback bit-detector, and the PRML sequence detector, which have significant performance benefits. These benefits come at almost no additional cost with respect to existing detectors.
摘要翻译：域名绽放也被称为不对称，是由光盘写入过程引起的系统缺陷。在光盘读出期间，它使信号转换相对于它们的标称位置移动。最先进的均衡和检测方法如果直接应用于具有不对称性的重放信号，则会遭受显着的性能损失。用于具有不对称性的重放信号的非线性模型被用于适用于存在不对称性的信号的新的均衡和检测技术。描述了具有显着性能优点的阈值位检测器，游程长度推回位检测器和PRML序列检测器的修改。对于现有的检测器来说，这些优点几乎不会增加成本。

2. 发明申请

WO2002103696A3 APPARATUS FOR REPRODUCING DIGITAL INFORMATION SIGNAL WITH MEANS FOR ASYMMETRY PARAMETER ESTIMATION 审中-公开
公开(公告)号：WO2002103696A3
公开(公告)日：2002-12-27
申请号：PCT/IB2002/002326
申请日：2002-06-18
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , POZIDIS, Charalampos , COENE, Willem, M., J., M. , BERGMANS, Johannes, W., M.
发明人： POZIDIS, Charalampos , COENE, Willem, M., J., M. , BERGMANS, Johannes, W., M.
IPC分类号： G11B20/10
摘要： Domain bloom, also known as asymmetry, is a systematic imperfection caused by the writing process in optical discs. During disc read-out it causes signal transitions to shift with respect to their nominal positions. State-of-the-art equalization and detection methods suffer significant performance losses if directly applied to replay signals with asymmetry. A non-linear model for replay signals with asymmetry is used for new equalization and detection techniques that are applicable to signals in the presence of asymmetry. Modifications are described of the threshold bit-detector, the run-length pushback bit-detector, and the PRML sequence detector, which have significant performance benefits. These benefits come at almost no additional cost with respect to existing detectors.

3. 发明申请

WO2012001599A3 CARBON- BASED RESISTIVE MEMORY ELEMENT AND MANUFACTURING THEREOF 审中-公开
公开(公告)号：WO2012001599A3
公开(公告)日：2012-01-05
申请号：PCT/IB2011/052790
申请日：2011-06-24
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , CAIMI, Daniele , ELEFTHERIOU, Evangelos, S. , POZIDIS, Charalampos , ROSSEL, Christophe, P. , SEBASTIAN, Abu
发明人： CAIMI, Daniele , ELEFTHERIOU, Evangelos, S. , POZIDIS, Charalampos , ROSSEL, Christophe, P. , SEBASTIAN, Abu
IPC分类号： H01L45/00 , G11C13/00
摘要： Disclosed is a method for manufacturing a resistive memory element (1) which comprises: providing a storage layer (2) comprising a resistance changeable material comprising carbon; providing contact layers (3, 4) for contacting the storage layer (2), wherein the storage layer (2) is disposed between a bottom contact layer (3) and a top contact layer (4); and doping the resistance changeable material with a dopant material, preferably hydrogen, nitrogen or a transition metal, and/or annealing the material. A corresponding resistive memory element (1) includes a bottom contact layer (3), a top contact layer (4) and a storage layer (2) disposed between the bottom contact layer (3) and the top contact layer (4), wherein the storage layer (2) comprises a resistance changeable material comprising carbon that is doped with a dopant material.

4. 发明申请

WO2012029007A1 CELL-STATE DETERMINATION IN PHASE-CHANGE MEMORY 审中-公开
标题翻译：相变记忆中的细胞状态测定
公开(公告)号：WO2012029007A1
公开(公告)日：2012-03-08
申请号：PCT/IB2011/053757
申请日：2011-08-26
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , ELEFTHERIOU, Evangelos S. , PANTAZI, Angeliki , PAPANDREOU, Nikolaos , POZIDIS, Charalampos , SEBASTIAN, Abu
发明人： ELEFTHERIOU, Evangelos S. , PANTAZI, Angeliki , PAPANDREOU, Nikolaos , POZIDIS, Charalampos , SEBASTIAN, Abu
IPC分类号： G11C13/00
CPC分类号： G11C13/0004 , G11C7/1006 , G11C11/5678 , G11C13/004
摘要： Methods and apparatus are provided for determining the state of a phase-change memory cell. A plurality of measurements are made on the cell, the measurements being dependent on the sub-threshold current-versus-voltage characteristic of the cell. The measurements are processed to obtain a metric which is dependent on the slope of the sub- threshold current-versus-voltage characteristic. The state of the cell is then determined in dependence on this metric which, unlike absolute cell resistance,is substantially unaffected by drift.
摘要翻译：提供了用于确定相变存储器单元的状态的方法和装置。对单元进行多个测量，测量取决于单元的次阈值电流对电压特性。处理测量以获得取决于子阈值电流对电压特性的斜率的度量。然后根据该度量确定单元的状态，其与绝对单元电阻不同，基本上不受漂移的影响。

5. 发明申请

WO2011121491A1 PROGRAMMING AT LEAST ONE MULTI-LEVEL PHASE CHANGE MEMORY CELL 审中-公开
标题翻译：编程至少一个多级相变记忆细胞
公开(公告)号：WO2011121491A1
公开(公告)日：2011-10-06
申请号：PCT/IB2011/051220
申请日：2011-03-23
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , ELEFTHERIOU, Evangelos S. , PANTAZI, Angeliki , PAPANDREOU, Nikolaos , POZIDIS, Charalampos , SEBASTIAN, Abu
发明人： ELEFTHERIOU, Evangelos S. , PANTAZI, Angeliki , PAPANDREOU, Nikolaos , POZIDIS, Charalampos , SEBASTIAN, Abu
IPC分类号： G11C13/00
CPC分类号： G11C13/0069 , G11C11/5678 , G11C13/0004 , G11C13/0097 , G11C2013/0078
摘要： A method is provided that comprises a step of programming the PCM cell to have a respective definite cell state by at least one current pulse flowing to the PCM cell, said respective definite cell state being defined at least by a respective definite resistance level, a step of controlling said respective current pulse by a respective bitline pulse and a respective wordline pulse, and a step of controlling said respective bitline pulse and said respective wordline pulse dependent on an actual resistance value of the PCM cell and a respective reference resistance value being defined for the definite resistance level.
摘要翻译：提供了一种方法，其包括通过流向PCM单元的至少一个电流脉冲对PCM单元进行编程以具有相应的确定单元状态的步骤，所述相应的确定单元状态至少由相应的确定电阻水平限定，步骤通过相应的位线脉冲和相应的字线脉冲来控制所述各个电流脉冲，以及根据PCM单元的实际电阻值来控制所述各个位线脉冲和所述各个字线脉冲的步骤，以及相应的参考电阻值被定义为确定阻力位。

6. 发明申请

WO2010092526A1 HIGH-SPEED ELECTROSTATIC ACTUATION OF MEMS-BASED DEVICES 审中-公开
标题翻译：基于MEMS的器件的高速静电激励
公开(公告)号：WO2010092526A1
公开(公告)日：2010-08-19
申请号：PCT/IB2010/050583
申请日：2010-02-09
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , PANTAZI, Angeliki , POZIDIS, Charalampos , SAHOO, Deepak Ranjan , SEBASTIAN, Abu
发明人： PANTAZI, Angeliki , POZIDIS, Charalampos , SAHOO, Deepak Ranjan , SEBASTIAN, Abu
IPC分类号： G09G3/34
CPC分类号： G09G3/3433 , G09G2320/0252 , G11C23/00
摘要： A micro-electro mechanical device includes a first structure (104), a second structure (106) offset from the first structure by a gap. The first structure is configured to be electrostatically actuated to deflect relative to second structure. A pulse generator is configured to combine at least two different pulses (302, 304) to electrostatically drive at least one of the first structure and the second structure between an initial position and a final position.
摘要翻译：微机电装置包括第一结构（104），通过间隙从第一结构偏移的第二结构（106）。第一结构构造成静电致动以相对于第二结构偏转。脉冲发生器被配置为组合至少两个不同的脉冲（302,304）以在初始位置和最终位置之间静电地驱动第一结构和第二结构中的至少一个。

7. 发明申请

WO2012120401A1 CELL-STATE DETERMINATION IN PHASE-CHANGE MEMORY 审中-公开
标题翻译：相变记忆中的细胞状态测定
公开(公告)号：WO2012120401A1
公开(公告)日：2012-09-13
申请号：PCT/IB2012/050848
申请日：2012-02-24
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , IBM (CHINA) INVESTMENT COMPANY LTD. , PANTAZI, Angeliki , PAPANDREOU, Nikolaos , POZIDIS, Charalampos , SEBASTIAN, Abu , FREY, Urs
发明人： PANTAZI, Angeliki , PAPANDREOU, Nikolaos , POZIDIS, Charalampos , SEBASTIAN, Abu , FREY, Urs
IPC分类号： G11C13/00
CPC分类号： G11C13/0004 , G11C11/5678 , G11C13/004 , G11C13/0061 , G11C13/0069 , G11C27/005 , G11C2013/005
摘要： Methods and apparatus are provided for determining the state of a phase-change memory cell (10). The cell (10) is biased with a time- varying read voltage (V read ) and a measurement (T M ) is then made. The measurement (T M ) is dependent on a predetermined condition being satisfied. This condition depends on cell current during application of the read voltage (V read ). The measurement (T M ) is then used to determine the state of the cell (10).
摘要翻译：提供了用于确定相变存储单元（10）的状态的方法和装置。电池（10）用随时间变化的读取电压（Vread）进行偏置，然后进行测量（TM）。测量（TM）取决于满足的预定条件。该条件取决于应用读取电压（Vread）期间的电池电流。然后使用测量（TM）来确定细胞的状态（10）。

8. 发明申请

WO2013046066A1 READ-DETECTION IN SOLID-STATE STORAGE DEVICES 审中-公开
标题翻译：固态存储器件中的读取检测
公开(公告)号：WO2013046066A1
公开(公告)日：2013-04-04
申请号：PCT/IB2012/053237
申请日：2012-06-27
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , MITTELHOLZER, Thomas , PAPANDREOU, Nikolaos , POZIDIS, Charalampos
发明人： MITTELHOLZER, Thomas , PAPANDREOU, Nikolaos , POZIDIS, Charalampos
IPC分类号： G11C11/56
CPC分类号： G11C11/5678 , G11C2211/563 , G11C2211/5634
摘要： Methods and apparatus are provided for detecting N-symbol codewords stored in multilevel-cell solid-state memory. Each codeword is a permutation of an N-symbol vector of a predefined set of N-symbol vectors. The symbols of each codeword, each of which has one of q symbol values, are stored in respective q-level cells of solid state memory (2), where N≥q>2. The memory cells storing a group of codewords are read to obtain respective read signals each comprising N signal components corresponding to respective symbols of a codeword. The components of each read signal are ordered according to signal level to produce an ordered read signal. Corresponding components of the ordered read signals are averaged to produce an average read signal. A reference signal level corresponding to each of the q levels of the memory cells is determined in dependence on the average read signal and predefined probabilities of occurrence of each symbol value at each symbol position in a said codeword whose symbols are ordered according to symbol value. The codeword corresponding to each read signal is then detected in dependence on the reference signal levels.
摘要翻译：提供了用于检测存储在多电平单元固态存储器中的N个符号码字的方法和装置。每个码字是N个符号向量的预定义集合的N个符号向量的置换。每个码字的符号，每个码字具有q个符号值之一，被存储在固态存储器（2）的相应的q级单元中，其中N> = q> 2。读取存储一组码字的存储单元以获得每个包括与码字的各个符号对应的N个信号分量的各个读信号。每个读取信号的分量根据信号电平排序以产生有序的读取信号。将有序读取信号的相应组件平均以产生平均读取信号。根据平均读取信号和符号根据符号值排序的所述码字中的每个符号位置处的每个符号位置的每个符号值的出现的预定概率来确定对应于存储器单元的每个q电平的参考信号电平。然后根据参考信号电平检测对应于每个读取信号的码字。

9. 发明申请

WO2012120400A1 PROGRAMMING OF PHASE-CHANGE MEMORY CELLS 审中-公开
标题翻译：相变记忆细胞的编程
公开(公告)号：WO2012120400A1
公开(公告)日：2012-09-13
申请号：PCT/IB2012/050846
申请日：2012-02-24
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , IBM (CHINA) INVESTMENT COMPANY LTD. , PANTAZI, Angeliki , PAPANDREOU, Nikolaos , POZIDIS, Charalampos , SEBASTIAN, Abu , FREY, Urs
发明人： PANTAZI, Angeliki , PAPANDREOU, Nikolaos , POZIDIS, Charalampos , SEBASTIAN, Abu , FREY, Urs
IPC分类号： G11C16/10
CPC分类号： G11C11/5678 , G11C7/1006 , G11C11/5685 , G11C13/0004 , G11C13/0007 , G11C13/004 , G11C13/0061 , G11C13/0064 , G11C13/0069 , G11C2013/0076
摘要： Methods and apparatus are provided for programming a phase-change memory cell (10). A bias voltage signal (V BL ) is applied to the cell. A measurement portion (m) of this bias voltage signal has a profile which varies with time. A measurement (T M ), which is dependent on a predetermined condition being satisfied, is then made. The predetermined condition is dependent on cell current during the measurement portion (m) of the bias voltage signal. A programming signal is generated in dependence on the measurement (T M ), and the programming signal is applied to program the cell (10).
摘要翻译：提供了用于编程相变存储器单元（10）的方法和装置。偏置电压信号（VBL）被施加到单元。该偏置电压信号的测量部分（m）具有随时间变化的轮廓。然后进行取决于满足预定条件的测量（TM）。预定条件取决于偏置电压信号的测量部分（m）期间的电池电流。根据测量（TM）产生编程信号，并且应用编程信号对单元（10）进行编程。

10. 发明申请

WO2012001554A1 ELECTROMECHANICAL SWITCH DEVICE AND METHOD OF OPERATING THE SAME 审中-公开
标题翻译：电动开关装置及其操作方法
公开(公告)号：WO2012001554A1
公开(公告)日：2012-01-05
申请号：PCT/IB2011/052490
申请日：2011-06-08
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , DESPONT, Michel , HAGLEITNER, Christoph , POZIDIS, Charalampos , SEBASTIAN, Abu
发明人： DESPONT, Michel , HAGLEITNER, Christoph , POZIDIS, Charalampos , SEBASTIAN, Abu
IPC分类号： H01H59/00 , H01H47/00
CPC分类号： H01H59/00 , H01H47/00 , H01H59/0009
摘要： The invention relates to an electromechanical switch device (100, 200), comprising a first switch portion (111, 112, 211, 212), a second switch portion (121, 122, 220) and an actuator device (130, 230). The actuator device (130, 230) is configured to provide an actuation force, thereby actuating the first and second switch portion (111, 112, 121, 122, 211, 212, 220) relative to each other in order to change from a disconnected to a connected state. The actuator device (130, 230) is further configured to provide the actuation force with a modulation at least when the first and second switch portion (111, 112, 121, 122, 211, 212, 220) are in the connected state. The invention furthermore relates to a method of operating an electromechanical switch device (100, 200).
摘要翻译：本发明涉及一种机电开关装置（100,200），其包括第一开关部分（111,112,211,212），第二开关部分（121,122,220）和致动器装置（130,230）。致动器装置（130,230）构造成提供致动力，从而相对于彼此致动第一和第二开关部分（111,112,121,122,211,212,220），以便从断开的到连接状态。致动器装置（130,230）进一步构造成至少当第一和第二开关部分（111,112,121,122,211,212,220）处于连接状态时，提供具有调制的致动力。本发明还涉及一种操作机电开关装置（100,200）的方法。

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