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1. 发明申请

WO2008065605A2 ELECTROPHORETIC COLOR DISPLAY PANEL 审中-公开
标题翻译：电子彩色显示面板
公开(公告)号：WO2008065605A2
公开(公告)日：2008-06-05
申请号：PCT/IB2007/054799
申请日：2007-11-27
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , LENSSEN, Kars-Michiel, H. , BAESJOU, Patrick, J. , VAN DELDEN, Martinus, H., W., M. , ROOSENDAAL, Sander, J. , STOFMEEL, Leon, W., G. , VERSCHUEREN, Alwin, R., M.
发明人： LENSSEN, Kars-Michiel, H. , BAESJOU, Patrick, J. , VAN DELDEN, Martinus, H., W., M. , ROOSENDAAL, Sander, J. , STOFMEEL, Leon, W., G. , VERSCHUEREN, Alwin, R., M.
IPC分类号： G02F1/167 , G02F1/1347
CPC分类号： G02F1/167 , G02F1/134363 , G02F1/13473 , G02F2001/1678 , G02F2203/34
摘要： The invention relates to an electrophoretic color display panel, the display panel comprising at least one pixel (10, 12), the at least one pixel (10, 12) comprising a layer cavity (18ab) containing a suspension with a first set of charged particles (24a) having a first optical property and a second set of charged particles (24b) having a second optical property, and a pair of control electrodes (20a, 20b) arranged adjacent to the layer cavity (18ab), such that charged particles (24a, 24b) are essentially in-plane displaceable in an in-plane direction within the layer cavity (18ab) upon application of a control voltage over the electrode pair, wherein the in-plane distribution of charged particles (24a, 24b) having first and second optical properties in the layer cavity (18ab) depends on at least one of a differing control property additional to any polarity difference of the charged particles (24a, 24b) for each set of charged particles, or at least one additional electrode arranged adjacent to the layer cavity, wherein the electrode pair (20a, 20b) and the at least one additional control electrode are arranged essentially outside of a viewing area (26) of the at least one pixel (10, 12), such that a composite optical property of at least a portion of the at least one pixel (10, 12) is controllable. According to the invention, the control electrodes will be arranged at essentially the outer ends, or arranged in-plane, at a peripheral, of a prolonged layer cavity, such that the particles move in an in-plane direction within the layer cavity when the control voltage is applied. This facilitates the handling of the pixel since the layer cavity can be reached from essentially the outside of the pixel. Another advantage is that since only a minor part of the pixel area has to be covered with an electrode material the total transmission and thus the brightness of the pixel can be optimized.
摘要翻译：本发明涉及一种电泳彩色显示面板，该显示面板包括至少一个像素（10,12），该至少一个像素（10,12）包括一层含有第一组带电荷的悬浮液的层腔（18ab）具有第一光学特性的颗粒（24a）和具有第二光学特性的第二组带电粒子（24b）和与层腔（18ab）相邻布置的一对控制电极（20a，20b），使得带电粒子（24a，24b）在电极对上施加控制电压时，在层空腔（18ab）内基本上可以在面内方向上移位，其中带电粒子（24a，24b）的面内分布具有层空腔（18ab）中的第一和第二光学特性取决于对于每组带电粒子的带电粒子（24a，24b）的任何极性差异附加的不同控制特性或至少一个附加电极排列的至少一个一个其中所述电极对（20a，20b）和所述至少一个附加控制电极基本上布置在所述至少一个像素（10,12）的观察区域（26）的外侧，使得复合材料至少一个像素（10,12）的至少一部分的光学特性是可控的。根据本发明，控制电极将基本上布置在延伸的层空腔的外围的外端或平面内，使得当颗粒在层腔内的平面内方向移动时，施加控制电压。这有助于像素的处理，因为可以从像素的基本上外部到达层空腔。另一个优点在于，由于只有少部分像素区域必须用电极材料覆盖，因此可以优化像素的总透射率和亮度。

2. 发明申请

WO2003104829A1 SENSOR AND METHOD FOR MEASURING A CURRENT OF CHARGED PARTICLES 审中-公开
标题翻译：用于测量充电颗粒电流的传感器和方法
公开(公告)号：WO2003104829A1
公开(公告)日：2003-12-18
申请号：PCT/IB2003/002263
申请日：2003-05-21
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , LENSSEN, Kars-Michiel, H.
发明人： LENSSEN, Kars-Michiel, H.
IPC分类号： G01R33/09
CPC分类号： G01R15/205 , G01R33/09
摘要： A current sensor (1) is disclosed for measuring a magnetic field (8) induced by a current of charged particles (3) having at least one magneto resistive sensor element (2;6;12;16) for enclosing the magnetic field induced by the current of charged particles, the magneto resistive sensor element being arranged perpendicularly to the current (3) during use. A method for accurately determining a current of charged particles is also disclosed making use of the current sensor (1). Further a protective switch device (30) is disclosed for protecting a user of an electrical device (31) by switching a supply current to the electric device off in case of malfunction of the electric device is also provided comprising the above current sensor (1).
摘要翻译：公开了一种用于测量由具有至少一个磁阻传感器元件（2; 6; 12; 16）的带电粒子（3）的电流引起的磁场（8）的电流传感器（1），用于封闭由带电粒子的电流，磁阻电阻传感器元件在使用期间垂直于电流（3）布置。还公开了一种用于精确地确定带电粒子的电流的方法，利用电流传感器（1）。此外，还提供了一种保护开关装置（30），用于通过在还包括上述电流传感器（1）的情况下提供电气装置的故障的情况下切断对电气装置的供电电流来保护电气装置的使用者，。

3. 发明申请

WO2003054886A3 INCREASED MAGNETIC STABILITY DEVICES SUITABLE FOR USE AS SUB-MICRON MEMORIES 审中-公开
公开(公告)号：WO2003054886A3
公开(公告)日：2003-07-03
申请号：PCT/IB2002/005475
申请日：2002-12-16
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , GILLIES, Murray, F. , LENSSEN, Kars-Michiel, H.
发明人： GILLIES, Murray, F. , LENSSEN, Kars-Michiel, H.
IPC分类号： G11C11/16
摘要： Magnetic device cells such as MRAM cells are described which can be used in sub-micron cell sizes. The present invention describes a method of stabilising magnetic device cells by creating a storage state where the two magnetisation directions of the spin valve are anti-parallel when no readout is performed. This avoids the problem at such small dimensions, that the parallel state of magnetisation directions in a spin valve or a spin tunnel junction become unstable. A high coercivity memory layer is combined with a low coercivity keeper layer. The read out process has also been simplified: only one pulse over the bit line and measurement of the resistance in the word line is sufficient to determine the data stored in a magnetic device cell according to the present invention.

4. 发明申请

WO2003054886A2 INCREASED MAGNETIC STABILITY DEVICES SUITABLE FOR USE AS SUB-MICRON MEMORIES 审中-公开
标题翻译：增加的磁性稳定性器件适用于作为副MICRON MEMORIES
公开(公告)号：WO2003054886A2
公开(公告)日：2003-07-03
申请号：PCT/IB2002/005475
申请日：2002-12-16
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , GILLIES, Murray, F. , LENSSEN, Kars-Michiel, H.
发明人： GILLIES, Murray, F. , LENSSEN, Kars-Michiel, H.
IPC分类号： G11C11/16
CPC分类号： G11C11/15 , G11C11/16
摘要： Magnetic device cells such as MRAM cells are described which can be used in sub-micron cell sizes. The present invention describes a method of stabilising magnetic device cells by creating a storage state where the two magnetisation directions of the spin valve are anti-parallel when no readout is performed. This avoids the problem at such small dimensions, that the parallel state of magnetisation directions in a spin valve or a spin tunnel junction become unstable. A high coercivity memory layer is combined with a low coercivity keeper layer. The read out process has also been simplified: only one pulse over the bit line and measurement of the resistance in the word line is sufficient to determine the data stored in a magnetic device cell according to the present invention.
摘要翻译：描述了可以以亚微米级细胞大小使用的磁性器件细胞，例如MRAM细胞。本发明描述了一种通过产生存储状态来稳定磁性器件单元的方法，其中当不执行读出时，自旋阀的两个磁化方向是反平行的。这避免了在这样小的尺寸下的问题，即自旋阀或自旋隧道结中的磁化方向的平行状态变得不稳定。高矫顽力记忆层与低矫顽力保持层组合。读出过程也被简化：根据本发明，在位线上只有一个脉冲和字线中的电阻的测量足以确定存储在磁性器件单元中的数据。

5. 发明申请

WO2004055824A2 METHOD AND DEVICE FOR PROTECTION OF AN MRAM DEVICE AGAINST TAMPERING 审中-公开
标题翻译：用于保护防止篡改的MRAM装置的方法和装置
公开(公告)号：WO2004055824A2
公开(公告)日：2004-07-01
申请号：PCT/IB2003/006005
申请日：2003-12-15
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , LENSSEN, Kars-Michiel, H. , JOCHEMSEN, Robert
发明人： LENSSEN, Kars-Michiel, H. , JOCHEMSEN, Robert
IPC分类号： G11C11/16
CPC分类号： H01L23/57 , G06F21/79 , G06K19/07372 , G11C8/20 , G11C11/1695 , H01L2924/0002 , Y10S257/922 , H01L2924/00
摘要： Data, stored in MRAM-cells (12) should be protected against misuse or read-out by unauthorised persons. The present invention provides an array (10) of MRAM-cells (12) provided with a security device (14) for destroying data stored in the MRAM-cells (12) when they are tampered with. This is achieved by placing a permanent magnet (16) adjacent the MRAM-array (10) in combination with a soft-magnetic flux-closing layer (18). As long as the soft-magnetic layer (18) is present, the magnetic field lines (20) from the permanent magnet (16) are deviated and flow through this soft-magnetic layer (18). When somebody is tampering with the MRAM-array (10), e.g. by means of reverse engineering, and the flux-closing layer (18) is removed, the flux is no longer deviated and affects the nearby MRAM-array (10), thus destroying the data stored in the MRAM-cells (12).
摘要翻译：存储在MRAM单元（12）中的数据应受到保护，防止未经授权的人员误用或读取。本发明提供了一种具有安全装置（14）的MRAM单元（12）的阵列（10），用于当它们被篡改时，破坏存储在MRAM单元（12）中的数据。这通过将与MRAM阵列（10）相邻的永磁体（16）与软磁通量闭合层（18）组合来实现。只要存在软磁性层（18），来自永磁体（16）的磁场线（20）就会偏离并流过该软磁层（18）。当某人篡改MRAM阵列（10）时，例如，通过逆向工程，并且去除磁通密闭层（18），磁通不再偏离并影响附近的MRAM阵列（10），从而破坏存储在MRAM单元（12）中的数据。

6. 发明申请

WO2004055823A2 HARDWARE SECURITY DEVICE FOR MAGNETIC MEMORY CELLS 审中-公开
标题翻译：用于磁记忆体的硬件安全装置
公开(公告)号：WO2004055823A2
公开(公告)日：2004-07-01
申请号：PCT/IB2003/005999
申请日：2003-12-15
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , LENSSEN, Kars-Michiel, H. , DENISSEN, Adrianus, J., M. , LAMBERT, Nicolaas
发明人： LENSSEN, Kars-Michiel, H. , DENISSEN, Adrianus, J., M. , LAMBERT, Nicolaas
IPC分类号： G11C11/16
CPC分类号： H01L23/57 , G11C11/161 , G11C11/1659 , G11C11/1675 , G11C11/1695 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a special structure of magnetic elements, e.g. MRAM elements (10, 11), as a security device (30) for IC's containing magnetic memory cells. The structure may comprise a combination of two or more associated magnetic elements (10, 11) with pre-set anti-parallel magnetization directions. By determining the polarisation directions of the magnetic elements, exposure to an external magnetic field can be detected. Inverse polarisation directions indicate a normal situation, aligned polarisation directions indicate that the MRAM-array has been exposed to an external field. In this way it can be detected whether it has been tried to erase or alter the data stored in the MRAM in an illegal way. The IC can regularly check the resistance of the security system during operation. Upon detection of a field exposure, the IC can erase all MRAM data, or can reset itself or block its functioning.
摘要翻译：本发明提供了一种磁性元件的特殊结构。 MRAM元件（10,11），作为用于包含磁存储器单元的IC的安全装置（30）。该结构可以包括具有预设的反并联磁化方向的两个或更多个相关联的磁性元件（10,11）的组合。通过确定磁性元件的极化方向，可以检测到暴露于外部磁场。反偏振方向表示正常情况，对准偏振方向表示MRAM阵列暴露于外部场。以这种方式，可以检测是否以非法方式擦除或更改存储在MRAM中的数据。 IC可以在运行期间定期检查安全系统的电阻。在检测到场曝光时，IC可以擦除所有的MRAM数据，或者可以自己复位或阻止其功能。

7. 发明申请

WO2004032146A2 PROGRAMMABLE MAGNETIC MEMORY DEVICE FP-MRAM 审中-公开
标题翻译：可编程磁记忆体设备FP-MRAM
公开(公告)号：WO2004032146A2
公开(公告)日：2004-04-15
申请号：PCT/IB2003/004376
申请日：2003-09-30
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , LENSSEN, Kars-Michiel, H.
发明人： LENSSEN, Kars-Michiel, H.
IPC分类号： G11C11/16
CPC分类号： G11C7/24 , G11B5/00 , G11B5/488 , G11B5/4907 , G11B2005/0002 , G11B2005/0021 , G11C11/16
摘要： A memory device has an information plane (32) for storing data bits in a magnetic state of an electro-magnetic material at an array of bit locations (31). The device further has an array of electro-magnetic sensor elements (51) that are aligned with the bit locations. The information plane (32) is programmable or programmed via a separate magnetic writing device (21). In particular a read-only sensor element (60) is described for a read-only magnetic memory.
摘要翻译：存储器件具有信息平面（32），用于存储在位阵列（31）处的电磁材料的磁状态下的数据位。该装置还具有与位位置对准的电磁传感器元件阵列（51）。信息平面（32）可通过单独的磁性写入装置（21）进行编程或编程。特别地，对于只读磁存储器描述了只读传感器元件（60）。

8. 发明申请

WO2004032115A1 STORAGE SYSTEM USING ELECTROMAGNETIC ARRAY 审中-公开
标题翻译：使用电磁阵列的存储系统
公开(公告)号：WO2004032115A1
公开(公告)日：2004-04-15
申请号：PCT/IB2003/004007
申请日：2003-09-12
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , LENSSEN, Kars-Michiel, H. , VAN HOUTEN, Hendrik
发明人： LENSSEN, Kars-Michiel, H. , VAN HOUTEN, Hendrik
IPC分类号： G11B5/00
CPC分类号： B82Y10/00 , G11B5/00 , G11B5/49 , G11B5/4907 , G11B5/4969 , G11B9/1418 , G11B9/1445 , G11B9/1481 , G11B2005/0002 , G11B2005/0005 , G11C11/15
摘要： A record carrier (40) of a removable type has an information plane of a layer of magnetic material on a substrate constituting an array of bit locations (11). A magnetic state of the material represents the value of each bit location. A storage device (35) has an interface surface (32) for cooperating with the information plane. The interface surface has an array (31) of electro-magnetic elements that are sensitive to said magnetic state of the electro-magnetic material. The record carrier and device have alignment elements (38, 41) for positioning the bit locations near the electro-magnetic elements within a near-field working distance between a bit location and the corresponding electro-magnetic element when the record carrier is mounted in the device.
摘要翻译：可拆卸式的记录载体（40）在构成钻头位置（11）的阵列的基板上具有磁性材料层的信息平面。材料的磁状态表示每个位位置的值。存储装置（35）具有用于与信息平面配合的接口面（32）。界面表面具有对电磁材料的所述磁状态敏感的电磁元件阵列（31）。记录载体和装置具有对准元件（38,41），用于在记录载体安装在位置位置和对应的电磁元件之间的位置和对应的电磁元件之间的近场工作距离内，将电子元件附近的位位置定位设备。

9. 发明申请

WO2003096351A2 MEMORIES AND MEMORY CIRCUITS 审中-公开
标题翻译：记忆和记忆电路
公开(公告)号：WO2003096351A2
公开(公告)日：2003-11-20
申请号：PCT/IB2003/001748
申请日：2003-04-25
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , VAN DER ZAAG, Pieter, J. , EDWARDS, Martin, J. , LENSSEN, Kars-Michiel, H.
发明人： VAN DER ZAAG, Pieter, J. , EDWARDS, Martin, J. , LENSSEN, Kars-Michiel, H.
IPC分类号： G11C
CPC分类号： G11C11/16
摘要： Magnetoresistive random access memory (MRAM) is used to provide in-pixel memory circuits for display devices. A memory circuit (25) comprises two MRAMs (60, 62), each coupled to a respective input of a flip-flop circuit (64). A display device (1) is provided comprising a plurality of pixels (20) each associated with a memory circuit (25). One of the MRAMs is a switchable MRAM (60), the other MRAM is a reference MRAM (62) arranged to provide a reference by which the changed states of the switchable MRAM (60) may be readily observed and measured in the form of a differential.
摘要翻译：磁阻随机存取存储器（MRAM）用于为显示设备提供像素内存电路。存储器电路（25）包括两个MRAM（60,62），每个MRAM耦合到触发器电路（64）的相应输入端。提供一种显示装置（1），其包括与存储电路（25）相关联的多个像素（20）。 MRAM中的一个是可切换MRAM（60），另一个MRAM是被配置为提供参考的参考MRAM（62），通过该参考，可以容易地观察和测量可切换MRAM（60）的改变状态，微分。

10. 发明申请

WO2003081599A1 IN-PIXEL MEMORY FOR DISPLAY DEVICES 审中-公开
标题翻译：用于显示设备的像素内存
公开(公告)号：WO2003081599A1
公开(公告)日：2003-10-02
申请号：PCT/IB2003/000589
申请日：2003-02-17
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , VAN DER ZAAG, Pieter, J. , EDWARDS, Martin, J. , LENSSEN, Kars-Michiel, H.
发明人： VAN DER ZAAG, Pieter, J. , EDWARDS, Martin, J. , LENSSEN, Kars-Michiel, H.
IPC分类号： G11C11/15
CPC分类号： G09G3/20 , G09G2300/0857 , G11C11/14 , G11C11/16
摘要： Magnetoresistive random access memory (MRAM) is used to provide in-pixel memory circuits for display devices. A memory circuit (25) comprises two MRAMs (60, 62), each coupled to a respective input of a flip-flop circuit (64). A display device (1) is provided comprising a plurality of pixels (20) each associated with a memory circuit (25). A bit line (45) passes over and contacts a first MRAM (60) in a first direction and a second MRAM (62) in a second direction, the first and second directions being substantially opposite to each other. This provides opposite resistance states in the two MRAMs (60, 62). The bit line (45) does not pass over a word line (43), thereby avoiding or reducing overlap capacitance losses. The word line (43) is formed during a same masking stage as a gate line (44). The bit line (45) is formed during a same masking stage as a column line (54).
摘要翻译：磁阻随机存取存储器（MRAM）用于为显示设备提供像素内存电路。存储器电路（25）包括两个MRAM（60,62），每个MRAM耦合到触发器电路（64）的相应输入端。提供一种显示装置（1），其包括与存储电路（25）相关联的多个像素（20）。位线（45）在第一方向上经过第一MRAM（60）并且在第二方向上接触第一MRAM（60），第二和第二方向基本上彼此相对。这在两个MRAM（60,62）中提供相反的电阻状态。位线（45）不通过字线（43），从而避免或减少重叠电容损耗。字线（43）在与栅极线（44）相同的掩模阶段形成。位线（45）在与列线（54）相同的掩模阶段形成。

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