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    • 4. 发明申请
    • MULTI-LAYER OVERLAY METROLOGY TARGET AND COMPLIMENTARY OVERLAY METROLOGY MEASUREMENT SYSTEMS
    • 多层叠加计量目标和综合覆盖度量度测量系统
    • WO2012018673A3
    • 2012-05-18
    • PCT/US2011045778
    • 2011-07-28
    • KLA TENCOR CORPKANDEL DANIELLEVINSKI VLADIMIRCOHEN GUY
    • KANDEL DANIELLEVINSKI VLADIMIRCOHEN GUY
    • H01L21/027
    • G03F7/70633G03F7/70683
    • A multi-layer overlay target for use in imaging based metrology is disclosed. The overlay target includes a plurality of target structures including three or more target structures, each target structure including a set of two or more pattern elements, wherein the target structures are configured to share a common center of symmetry upon alignment of the target structures, each target structure being invariant to N degree rotation about the common center of symmetry, wherein N is equal to or greater than 180 degrees, wherein each of the two or more pattern elements has an individual center of symmetry, wherein each of the two or more pattern elements of each target structure is invariant to M degree rotation about the individual center of symmetry, wherein M is equal to or greater than 180 degrees.
    • 公开了一种用于基于成像的计量学的多层覆盖目标。 覆盖目标包括包括三个或更多个目标结构的多个目标结构,每个目标结构包括一组两个或多个模式元素,其中目标结构被配置为在目标结构对准时共享公共对称中心,每个目标结构 目标结构相对于公共对称中心不变为N度旋转,其中N等于或大于180度,其中两个或更多个图案元素中的每一个具有单独的对称中心,其中两个或更多个图案 每个目标结构的元素对于单个对称中心的M度旋转是不变的,其中M等于或大于180度。
    • 6. 发明申请
    • ORDER SELECTED OVERLAY METROLOGY
    • 订单选择重叠度量
    • WO2007143056A2
    • 2007-12-13
    • PCT/US2007012875
    • 2007-05-31
    • KLA TENCOR TECH CORPKANDEL DANIELLEVINSKI VLADIMIRADEL MICHAEL ESELIGSON JOEL L
    • KANDEL DANIELLEVINSKI VLADIMIRADEL MICHAEL ESELIGSON JOEL L
    • G01B11/00
    • G03F7/70633
    • Disclosed are apparatus and methods for measuring a characteristic, such as overlay, of a semiconductor target. In general, order-selected imaging and/or illumination is performed while collecting an image from a target using a metrology system. In one implementation, tunable spatial modulation is provided only in the imaging path of the system. In other implementations, tunable spatial modulation is provided in both the illumination and imaging paths of the system. In a specific implementation, tunable spatial modulation is used to image side-by-side gratings with diffraction orders ±n. The side-by-side gratings may be in different layers or the same layer of a semiconductor wafer. The overlay between the structures is typically found by measuring the distance between centers symmetry of the gratings. In this embodiment, only orders ±n for a given choice of n (where n is an integer and not equal to zero) are selected, and the gratings are only imaged with these diffraction orders.
    • 公开了用于测量半导体靶的特性(例如覆盖)的装置和方法。 通常,在使用度量系统从目标物收集图像的同时执行顺序选择的成像和/或照明。 在一个实现中,仅在系统的成像路径中提供可调谐空间调制。 在其他实施方式中,在系统的照明和成像路径中提供可调谐的空间调制。 在具体实现中,可调谐空间调制用于以衍射级±n对并行光栅进行成像。 并排光栅可以在不同的层或相同的半导体晶片层中。 通常通过测量光栅的中心对称性之间的距离来发现结构之间的覆盖。 在本实施例中,对于给定的n(其中n是整数且不等于零)的选择,仅选择±n,并且光栅仅以这些衍射级成像。
    • 7. 发明申请
    • TARGET ACQUISITION AND OVERLAY METROLOGY BASED ON IMAGING BY TWO DIFFRACTED ORDERS
    • 基于两个差异订单成像的目标获取和覆盖度量
    • WO2006094021A3
    • 2007-01-11
    • PCT/US2006007195
    • 2006-02-28
    • KLA TENCOR TECH CORPFROMMER AVIVLEVINSKI VLADIMIRSMITH MARK DBYERS JEFFREYMACK CHRIS AADEL MICHAEL E
    • FROMMER AVIVLEVINSKI VLADIMIRSMITH MARK DBYERS JEFFREYMACK CHRIS AADEL MICHAEL E
    • G01B11/00
    • G03F9/7049G03F7/70633G03F9/7088
    • A system for imaging an acquisition target or an overlay or alignment semiconductor target (404) is disclosed. The system includes a beam generator for directing at least one incident beam (402) having a wavelength lamda towards a periodic target (404) having structures with a specific pitch p. A plurality of output beams (406) are scattered from the periodic target (404) in response to the at least one incident beam (402). The system further includes an imaging lens system (410) for passing only a first and second output beam (412a, 412b) from the target (404). The imaging system is adapted such that the angular separation between the captured beams, lamda, and the pitch are selected to cause the first and second output beams (412a, 412b) to form a sinusoidal image (414). The system also includes a sensor for imaging the sinusoidal image or images (414), and a controller for causing the beam generator to direct the at least one incident beam (402) towards the periodic target or targets (404), and for analyzing the sinusoidal image or images (414).
    • 公开了一种用于对采集目标或覆盖或对准半导体目标进行成像的系统(404)。 该系统包括用于将具有波长兰达的至少一个入射光束(402)朝向具有特定间距p的结构的周期性靶(404)引导的光束发生器。 响应于至少一个入射光束(402),多个输出光束(406)从周期性靶标(404)散射。 该系统还包括用于仅使来自目标物(404)的第一和第二输出光束(412a,412b)通过的成像透镜系统(410)。 成像系统被适配成使得捕获的光束,兰达和间距之间的角度间隔被选择以使得第一和第二输出光束(412a,412b)形成正弦图像(414)。 该系统还包括用于对正弦图像或图像进行成像的传感器(414),以及控制器,用于使光束发生器将至少一个入射光束(402)引向周期性目标(404),并且用于分析 正弦图像或图像(414)。