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1. 发明申请

WO2009158402A1 SOLAR CELL FOR IMPLANTABLE MEDICAL DEVICE 审中-公开
标题翻译：用于可植入医疗器械的太阳能电池
公开(公告)号：WO2009158402A1
公开(公告)日：2009-12-30
申请号：PCT/US2009/048450
申请日：2009-06-24
申请人： IXYS CORPORATION , ZOMMER, Nathan
发明人： ZOMMER, Nathan
IPC分类号： A61N1/378
CPC分类号： A61N1/3787 , H02J7/355
摘要： An implantable medical device includes a solar cell configured to provide energy to recharge a power source such as a battery. The power source is coupled to a control circuit of the medical device and provides power to the circuit. The solar cell may be coupled to the power source via a wire and may be distanced from a housing of the medical device. The solar cell may also be attached to the housing or may be disposed in the housing. The medical device may be implanted in the body of a host such that a surface of the solar cell is provided under a layer of skin of the host. The translucent property of skin allows the solar cell to receive light or infrared radiation from outside the body. The solar cell converts the received energy and provides the converted energy to the power source for recharging.
摘要翻译：可植入医疗装置包括被配置为提供能量以再充电诸如电池的电源的太阳能电池。电源耦合到医疗设备的控制电路，并向电路提供电力。太阳能电池可以通过电线耦合到电源，并且可以远离医疗装置的壳体。太阳能电池还可以附接到壳体或者可以设置在壳体中。医疗装置可以植入主体的主体中，使得太阳能电池的表面设置在主体皮肤层的下方。皮肤的半透明性使得太阳能电池能够从身体外部接收光或红外辐射。太阳能电池转换接收到的能量并将转换的能量提供给电源以进行充电。

2. 发明申请

WO2010019691A1 SYSTEM AND METHOD FOR CONSERVING POWER APPLIED TO AN ELECTRICAL APPARATUS 审中-公开
标题翻译：用于保存应用于电气设备的电力的系统和方法
公开(公告)号：WO2010019691A1
公开(公告)日：2010-02-18
申请号：PCT/US2009/053583
申请日：2009-08-12
申请人： ZOMMER, Nathan , IXYS CORPORATION
发明人： ZOMMER, Nathan
IPC分类号： G06F1/26
CPC分类号： G06F1/3203
摘要： A usage pattern identifies time periods when an electrical apparatus is likely to bepowered-up or not in use. Power provided to an electrical apparatus is increased during time periods that the electrical apparatus is likely to be powered-up. Similarly, the power provided to the electrical apparatus is reduced or removed during tme periods that the electrical apparatus is likely to be out of use or idle. The usage pattern is continually updated and refined by collecting usage data during user interaction with the electrical apparatus.
摘要翻译：使用模式识别电气设备可能会被激活或不使用的时间段。提供给电气设备的功率在电气设备可能上电的时间段内增加。类似地，提供给电气设备的电力在电气设备可能不再使用或空闲的期间被减少或移除。通过在与电气设备的用户交互期间收集使用数据来不断更新和改进使用模式。

3. 发明申请

WO2010141306A1 METHODS AND APPARATUSES FOR CONVERTING CARBON DIOXIDE AND TREATING WASTE MATERIAL 审中-公开
标题翻译：用于转化二氧化碳和处理废物的方法和装置
公开(公告)号：WO2010141306A1
公开(公告)日：2010-12-09
申请号：PCT/US2010/036330
申请日：2010-05-27
申请人： IXYS CORPORATION , ZOMMER, Nathan
发明人： ZOMMER, Nathan
IPC分类号： B01J19/08
CPC分类号： B01J19/085 , B01D53/007 , B01D53/62 , B01D2257/504 , B01D2259/812 , B01J2219/1944 , C01B32/60 , C01D7/07 , C01D7/18 , C01F5/24 , C01F11/18 , Y02C10/04 , Y02P20/152
摘要： Methods and apparatuses for converting carbon dioxide and treating waste material using a high energy electron beam are disclosed. For example, carbon dioxide and an aqueous reaction solution having a reactant can be combined to form an aqueous reaction mixture, and the aqueous reaction mixture can then be subjected to a high energy electron beam that initiates a reaction between carbon dioxide and the reactant to form a reaction product. Solid or liquid waste material can be treated by, for example, combining carbon dioxide and a solid or liquid waste material having a reactant and then subjecting the carbon dioxide and solid or liquid waste material having a reactant to a high energy electron beam to initiate a reaction between the carbon dioxide and the reactant to form a reaction product.
摘要翻译：公开了使用高能电子束转换二氧化碳和处理废料的方法和装置。例如，可以将具有反应物的二氧化碳和含水反应溶液组合以形成水反应混合物，然后将水性反应混合物经受高能电子束，其引发二氧化碳和反应物之间的反应以形成反应产物。固体或液体废料可以通过例如组合二氧化碳和具有反应物的固体或液体废物进行处理，然后使具有反应物的二氧化碳和固体或液体废料对高能电子束进行起始二氧化碳和反应物之间的反应形成反应产物。

4. 发明申请

WO2008022149A3 VIDEO AND CONTENT CONTROLLED BACKLIGHT 审中-公开
公开(公告)号：WO2008022149A3
公开(公告)日：2008-02-21
申请号：PCT/US2007/075928
申请日：2007-08-14
申请人： IXYS CORPORATION , ZOMMER, Nathan , OUCHI, Sam
发明人： ZOMMER, Nathan , OUCHI, Sam
IPC分类号： G09G3/36
摘要： A display device includes a display panel; and a backlight panel provided below the display panel and defining a plurality of regions. A first array of light emitting diodes (LEDs) is provided along a first direction, each LED of the first array being coupled to a first line. A driver is coupled to the first line to drive the LEDs coupled to the first line. A second array of LEDs is provided along a second direction, each LEDs of the second array being coupled to a second line. A lighting condition of the regions defined by the backlight panel is controlled by turning on or off the LEDs.

5. 发明申请

WO1991003078A1 INSULATED GATE THYRISTOR WITH GATE TURN ON AND TURN OFF 审中-公开
标题翻译：绝缘闸门与门开启并关闭
公开(公告)号：WO1991003078A1
公开(公告)日：1991-03-07
申请号：PCT/US1990004219
申请日：1990-07-27
申请人： IXYS CORPORATION
发明人： IXYS CORPORATION , ZOMMER, Nathan
IPC分类号： H01L29/06
CPC分类号： H01L29/66333 , H01L29/66378 , H01L29/7455
摘要： An insulated gate thyristor (IGTH) (40, 80) that is built on IGBT technology rather than SCR or thyristor technology. The device provides the low on-resistance of a thyristor with the gate turn-on and turn-off capability of an IGBT. The device may be fabricated in a somewhat modified IGBT process, in a cellular (40) or stripe (80) configuration. First the process is modified (by reduced doping) in order to promote (rather than inhibit) latch-up. Second, certain regions (52) are formed without source diffusions to create a lateral MOSFET (T5) that can turn off the latched IGBT.
摘要翻译：一种绝缘栅极晶闸管（IGTH）（40,80），其基于IGBT技术而不是SCR或晶闸管技术。该器件提供具有IGBT的栅极导通和关断能力的晶闸管的低导通电阻。该装置可以以稍微改进的IGBT工艺制造，在蜂窝（40）或条带（80）配置中。首先，通过减少掺杂来改进（而不是抑制）闩锁的过程。第二，形成没有源扩散的某些区域（52）以产生可以关断锁存IGBT的横向MOSFET（T5）。

6. 发明申请

WO1989008928A1 HIGH POWER TRANSISTOR WITH VOLTAGE, CURRENT, POWER, RESISTANCE, AND TEMPERATURE SENSING CAPABILITY 审中-公开
标题翻译：具有电压，电流，功率，电阻和温度感测能力的高功率晶体管
公开(公告)号：WO1989008928A1
公开(公告)日：1989-09-21
申请号：PCT/US1989000900
申请日：1989-03-06
申请人： IXYS CORPORATION
发明人： IXYS CORPORATION , ZOMMER, Nathan
IPC分类号： H01L29/78
CPC分类号： H01L29/7815 , H01L27/0248 , H01L29/0646 , H01L29/1095
摘要： One or more probe cells are used to sense voltage and current accurately and without affecting performance of the switching device (T1) or the load. In addition, power, resistance, and temperature can be determined from the voltage and current. Voltage sensing is accomplished by placing a large value resistor (R3) (much greater than the on-resistance of the probe cell(s) between the probe cell(s) and its low voltage connection (the common source terminal in the case of MOSFET's). Since the resistor (R3) is much greater than the cell resistance, the voltage across the resistor is nearly equal to the voltage across the power chip (10). Current probe cells are isolated from switching cells (27) in MOSFET power chips. The cell locations adjacent the probe cells are occupied by cells (50) that are inactive by virtue of their not having had a source region implanted therein during the chip fabrication. This isolation prevents any crosstalk between probe and switching cells.

7. 发明申请

WO1992005481A1 INSULATED GATE TRANSISTOR DEVICES WITH TEMPERATURE AND CURRENT SENSOR 审中-公开
标题翻译：具有温度和电流传感器的绝缘栅极晶体管器件
公开(公告)号：WO1992005481A1
公开(公告)日：1992-04-02
申请号：PCT/US1991006741
申请日：1991-09-17
申请人： IXYS CORPORATION
发明人： IXYS CORPORATION , ZOMMER, Nathan
IPC分类号： G05F03/26
CPC分类号： H01L29/7815 , H01L27/0248 , H01L2924/0002 , H03K17/0822 , H03K17/567 , H03K2017/0806 , H01L2924/00
摘要： A technique for sensing the temperature of power MOS devices contemplates a main transistor (T1) and a monolithically formed sense transistor (T2). A resistor (R), which may be integrated into the device or may be off chip, is connected between the respective source nodes (S1, S2) of the main transistor (T1) and the sense transistor (T2) (as in a normal current mirror). However, the respective gate nodes (G1, G2) of the main transistor (T1) and the sense transistor (T2) are not directly connected to each other (in contrast to the normal current mirror configuration where the respective gate nodes (G1, G2) of the main transistor (T1) and the sense transistor (T2) are directly connected). Rather, the sense transistor gate node (G2) is coupled to the output terminal of an operational amplifier (60). The amplifier (60) has a first input terminal coupled to a reference voltage (Vref) and a second, complementary, input terminal coupled to the sense transistor source node (S2).

8. 发明申请

WO1996013857A1 STABLE HIGH VOLTAGE SEMICONDUCTOR DEVICE STRUCTURE 审中-公开
标题翻译：稳定的高电压半导体器件结构
公开(公告)号：WO1996013857A1
公开(公告)日：1996-05-09
申请号：PCT/US1995014116
申请日：1995-10-31
申请人： IXYS CORPORATION
发明人： IXYS CORPORATION , ZOMMER, Nathan
IPC分类号： H01L23/58
CPC分类号： H01L29/404 , H01L21/765 , H01L23/528 , H01L23/585 , H01L23/60 , H01L2924/0002 , H01L2924/00
摘要： A power integrated circuit device with multiple guard rings (102, 103, 105, 106) and field plates (125, 127, 131, 133) overlying regions between each of the guard rings. Each of the field plates formed overlying a dielectric layer (117, 119) also between each of the guard rings (102, 103, 105, 106). Multiple field plates (141, 143, 145, 147) can exist between each of the guard rings. At least one field plate (125) couples to a main junction region and another field plate (137) couples to a peripheral region, typically a scribe line. The present power device structure with multiple guard rings and field plates provides a resulting guard ring structure which allows for such device to achieve higher voltage applications.
摘要翻译：一种功率集成电路装置，具有多个保护环（102,103,105,106）和覆盖每个保护环之间的区域的场板（125,127,131,133）。形成在每个保护环（102,103,105,106）之间的介电层（117,119）上形成的每个场板。在每个保护环之间可以存在多个场板（141,143,145,147）。至少一个场板（125）耦合到主结区，而另一个场板（137）耦合到周边区域，通常是划线。具有多个保护环和场板的本发明的功率器件结构提供了最终的保护环结构，其允许这种器件实现更高的电压应用。

9. 发明申请

WO1989012361A1 MOSFET DEVICE WITH CURRENT MIRROR HAVING BI-DIRECTIONAL CAPABILITY 审中-公开
标题翻译：具有具有双向能力的电流镜的MOSFET器件
公开(公告)号：WO1989012361A1
公开(公告)日：1989-12-14
申请号：PCT/US1989002371
申请日：1989-06-01
申请人： IXYS CORPORATION
发明人： IXYS CORPORATION , ZOMMER, Nathan
IPC分类号： H03K17/687
CPC分类号： H03K17/687 , H03K17/08104 , H03K17/567 , H03K17/6874
摘要： A technique for providing dual direction current sensing with a single current mirror (TM) configured to provide the same current ratio in both directions for at least one predetermined temperature. The invention contemplates any of a number of techniques for providing relatively increased diode conduction in the mirror (TM) in order to provide the same current ratio as when channel conduction is the sole mechanism. These include increasing the doping of the cell body, increasing the diode area per cell relative to the amount of MOS channel area, providing extra diode cells in the mirror, or locating the current mirror in the hottest part of the chip where diode conduction is greatest.
摘要翻译：一种用于提供具有单电流镜（TM）的双向电流感测的技术，其配置为在两个方向上为至少一个预定温度提供相同的电流比。本发明设想了用于在镜（TM）中提供相对增加的二极管导通的许多技术中的任何一种，以便提供与当通道导通是唯一机构时相同的电流比。这些包括增加电池体的掺杂，相对于MOS沟道面积的量增加每单元的二极管面积，在反射镜中提供额外的二极管单元，或将电流镜定位在二极管导通最大的芯片的最热的部分。

10. 发明申请

WO2002073662A3 NON-UNIFORM POWER SEMICONDUCTOR AND METHOD FOR MAKING 审中-公开
公开(公告)号：WO2002073662A3
公开(公告)日：2002-09-19
申请号：PCT/US2002/000997
申请日：2002-01-14
申请人： IXYS CORPORATION
发明人： TSUKANOV, Vladimir , ZOMMER, Nathan
IPC分类号： H01L21/82
摘要： An active area [102] of a power device comprises active cells [104] having design that vary depending on where they are located in the active area [102]. Design variations include structural variations and variations in the material used to produce the cells.

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