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1. 发明申请

WO2022178825A1 NOVEL DESIGN FOR FIBER ARRAY UNIT (FAU) FOR OPTICAL TRANSCEIVER PRODUCTS 审中-公开
公开(公告)号：WO2022178825A1
公开(公告)日：2022-09-01
申请号：PCT/CN2021/078122
申请日：2021-02-26
申请人： INTEL CORPORATION , ADIVARAHAN, Vinod , CUI, Liqiang , MALLIK, Aditi , XIE, Boping , PRIYADARSHI, Sunil
发明人： ADIVARAHAN, Vinod , CUI, Liqiang , MALLIK, Aditi , XIE, Boping , PRIYADARSHI, Sunil
IPC分类号： G02B6/08
摘要： A fiber array unit (200) and a photonics system (890), a fiber array unit (200) comprises a substrate (205) with a first end and a second end. A first mesa (207) is adjacent to the first end and a second mesa (209) is adjacent to the second end. A v-groove (211) is in the first mesa (207) and a slot (213) is in the second mesa (209). The v-groove (211) is aligned with the slot (213).

2. 发明申请

WO2009023722A1 MICRO-PIXEL ULTRAVIOLET LIGHT EMITTING DIODE 审中-公开
标题翻译：微型超紫外线发光二极管
公开(公告)号：WO2009023722A1
公开(公告)日：2009-02-19
申请号：PCT/US2008/073030
申请日：2008-08-13
申请人： NITEK, INC. , ADIVARAHAN, Vinod , KHAN, Asif , KHAN, Rubina
发明人： ADIVARAHAN, Vinod , KHAN, Asif , KHAN, Rubina
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L27/156 , H01L33/12
摘要： An ultra-violet light-emitting diode (LED) array, 12, and method for fabricating same with an AlInGaN multiple-quantum-well active region, 500, exhibiting stable cw-powers. The LED includes a template, 10, with an ultraviolet light-emitting array structure on it. The template includes a first buffer layer, 321, then a second buffer layer, 421, on the first preferably with a strain-relieving layer in both buffer layers. Next there is a semiconductor layer having a first type of conductivity, 500, followed by a layer providing a quantum-well region, 600, with an emission spectrum ranging from 190 nm to 369 nm. Another semiconductor layer having a second type of conductivity is applied next, 800. A first metal contact, 980, is a charge spreading layer in electrical contact with the first layer and between the array of LED's. A second contact, 990, is applied to the semiconductor layer having the second type of conductivity, to complete the LED.
摘要翻译：一种紫外发光二极管（LED）阵列12及其制造方法，具有稳定的cw功率的AlInGaN多量子阱有源区500。 LED包括一个具有紫外发光阵列结构的模板10。模板包括第一缓冲层321，然后第二缓冲层421，优选地在两个缓冲层中具有应变消除层。接下来，存在具有第一类型导电性的半导体层500，接着是提供量子阱区域的层600，发射光谱范围为190nm至369nm。接下来施加具有第二类型导电性的另一半导体层，800.第一金属触点980是与第一层电连接并在LED阵列之间的电荷扩散层。第二触点990被施加到具有第二类导电性的半导体层，以完成LED。

3. 发明申请

WO2008061085A1 SELECTIVELY DOPED SEMI-CONDUCTORS AND METHODS OF MAKING THE SAME 审中-公开
标题翻译：选择性半导体半导体及其制造方法
公开(公告)号：WO2008061085A1
公开(公告)日：2008-05-22
申请号：PCT/US2007/084520
申请日：2007-11-13
申请人： UNIVERSITY OF SOUTH CAROLINA , KHAN, Asif , ADIVARAHAN, Vinod
发明人： KHAN, Asif , ADIVARAHAN, Vinod
IPC分类号： H01L21/02
CPC分类号： H01L29/0847 , H01L21/2258 , H01L29/0891 , H01L29/2003 , H01L29/66462 , H01L29/7787 , H01L33/025 , H01L33/325 , Y10T428/24802
摘要： The present invention is generally directed to methods of selectively doping a substrate and the resulting selectively doped substrates. The methods include doping an epilayer of a substrate with the selected doping material to adjust the conductivity of either the epilayers grown over a substrate or the substrate itself. The methods utilize lithography to control the location of the doped regions on the substrate. The process steps can be repeated to form a cyclic method of selectively doping different areas of the substrate with the same or different doping materials to further adjust the properties of the resulting substrate.
摘要翻译：本发明一般涉及选择性掺杂衬底和所得到的选择性掺杂衬底的方法。所述方法包括用所选择的掺杂材料掺杂衬底的外延层以调节在衬底或衬底本身上生长的外延层的导电性。该方法利用光刻来控制衬底上的掺杂区域的位置。可以重复工艺步骤以形成用相同或不同的掺杂材料选择性掺杂衬底的不同区域以进一步调节所得衬底的性质的循环方法。

4. 发明申请

WO2009152062A2 ULTRAVIOLET LIGHT EMITTING DIODE WITH AC VOLTAGE OPERATION 审中-公开
标题翻译：具有交流电压运行的超紫外线发光二极管
公开(公告)号：WO2009152062A2
公开(公告)日：2009-12-17
申请号：PCT/US2009/046525
申请日：2009-06-06
申请人： NITEK, INC. , KHAN, Asif , ADIVARAHAN, Vinod , FAREED, Qhalid
发明人： KHAN, Asif , ADIVARAHAN, Vinod , FAREED, Qhalid
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L27/153 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： Ultraviolet light emitting illuminator, and method for fabricating same, comprises an array of ultraviolet light emitting diodes and a first and a second terminal. When an alternating current is applied across the first and second terminals and thus to each of the diodes, the illuminator emits ultraviolet light at a frequency corresponding to that of the alternating current. The illuminator includes a template with ultraviolet light emitting quantum wells, a first buffer layer with a first type of conductivity and a second buffer layer with a second type of conductivity, all deposited preferably over a strain-relieving layer. A first and second metal contact are applied to the semiconductor layers having the first and second type of conductivity, respectively, to complete the LED. The emission spectrum ranges from 190 nm to 369 nm. The illuminator may be configured in various materials, geometries, sizes and designs.
摘要翻译：紫外线发光照明器及其制造方法包括紫外发光二极管阵列和第一和第二终端阵列。当跨越第一和第二端子以及因此施加到每个二极管的交流电时，照明器以与交流电流相对应的频率发射紫外光。照明器包括具有紫外光发射量子阱的模板，具有第一类型导电性的第一缓冲层和具有第二导电类型的第二缓冲层，所有这些均优选沉积在应变消除层上。将第一和第二金属接触分别施加到具有第一和第二导电类型的半导体层以完成LED。发射光谱范围为190nm至369nm。照明器可以被配置成各种材料，几何形状，尺寸和设计。

5. 发明申请

WO2008127469A2 A NOVEL FABRICATION TECHNIQUE FOR HIGH FREQUENCY, HIGH POWER GROUP III NITRIDE ELECTRONIC DEVICES 审中-公开
标题翻译：高频大功率III族氮化物电子器件的新型制备技术
公开(公告)号：WO2008127469A2
公开(公告)日：2008-10-23
申请号：PCT/US2007/087755
申请日：2007-12-17
申请人： UNIVERSITY OF SOUTH CAROLINA , KHAN, M. Asif , ADIVARAHAN, Vinod
发明人： KHAN, M. Asif , ADIVARAHAN, Vinod
IPC分类号： H01L21/306
CPC分类号： H01L29/7783 , H01L21/02057 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/30621 , H01L21/3141 , H01L21/31608 , H01L21/3185 , H01L29/2003 , H01L29/66462
摘要： Fabrication methods of a high frequency (sub-micron gate length) operation of AlInGaN/InGaN/GaN MOS-DHFET, and the HFET device resulting from the fabrication methods, are generally disclosed. The method of forming the HFET device generally includes a novel double-recess etching and a pulsed deposition of an ultra-thin, high-quality silicon dioxide layer as the active gate-insulator. The methods of the present invention can be utilized to form any suitable field effect transistor (FET), and are particular suited for forming high electron mobility transistors (HEMT).
摘要翻译：一般公开了AlInGaN / InGaN / GaN MOS-DHFET的高频（亚微米栅极长度）操作的制造方法以及由该制造方法产生的HFET器件。形成HFET器件的方法通常包括作为有源栅极绝缘体的新颖的双凹槽蚀刻和超薄高质量二氧化硅层的脉冲沉积。本发明的方法可用于形成任何合适的场效应晶体管（FET），并且特别适用于形成高电子迁移率晶体管（HEMT）。

6. 发明申请

WO2009120998A2 LOW RESISTANCE ULTRAVIOLET LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：低电阻紫外线发光器件及其制造方法
公开(公告)号：WO2009120998A2
公开(公告)日：2009-10-01
申请号：PCT/US2009/038628
申请日：2009-03-27
申请人： NITEK, INC. , KHAN, Asif , FAREED, Qhalid , ADIVARAHAN, Vinod
发明人： KHAN, Asif , FAREED, Qhalid , ADIVARAHAN, Vinod
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/0079 , H01L33/12 , H01L33/22
摘要： A low resistance light emitting device with an ultraviolet light-emitting structure having a first layer with a first conductivity, a second layer with a second conductivity; and a light emitting quantum well region between the first layer and second layer. A first electrical contact is in electrical connection with the first layer and a second electrical contact is in electrical connection with the second layer. A template serves as a platform for the light-emitting structure. The ultraviolet light-emitting structure has a first layer having a first portion and a second portion of AlXInYGa(1-X-Y)N with an amount of elemental indium, the first portion surface being treated with silicon and indium containing precursor sources, and a second layer. When an electrical potential is applied to the first layer and the second layer the device emits ultraviolet light.
摘要翻译：具有紫外发光结构的低电阻发光器件，所述紫外发光结构具有：具有第一导电性的第一层，具有第二导电性的第二层; 以及在第一层和第二层之间的发光量子阱区域。第一电触点与第一层电连接并且第二电触点与第二层电连接。模板作为发光结构的平台。紫外发光结构具有第一层和第二层，第一层具有含有一定量铟元素的AlXInYGa（1-XY）N的第一部分和第二部分，第一部分表面用硅和含铟前体源处理，第二部分表面层。当电位施加到第一层和第二层时，装置发射紫外光。

7. 发明申请

WO2009002365A1 PULSED SELECTIVE AREA LATERAL EPITAXY FOR GROWTH OF III-NITRIDE MATERIALS OVER NON-POLAR AND SEMI-POLAR SUBSTRATES 审中-公开
标题翻译：用于非极性和半极性基底上III-NITRIDE材料生长的选择区选择区域外延
公开(公告)号：WO2009002365A1
公开(公告)日：2008-12-31
申请号：PCT/US2007/087751
申请日：2007-12-17
申请人： UNIVERSITY OF SOUTH CAROLINA , KHAN, M. Asif , ADIVARAHAN, Vinod
发明人： KHAN, M. Asif , ADIVARAHAN, Vinod
IPC分类号： H01L21/28 , H01L31/00
CPC分类号： H01L21/02647 , C30B25/04 , C30B29/403 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262
摘要： An epitaxy procedure for growing extremely low defect density non-polar and semi-polar III-nitride layers over a base layer, and the resulting structures, is generally described. In particular, a pulsed selective area lateral overgrowth of a group III nitride layer can be achieved on a non-polar and semi-polar base layer. By utilizing the novel P-MOCVD or PALE and lateral over growth over selected area, very high lateral growth conditions can be achieved at relatively lower growth temperature which does not affect the III-N surfaces.
摘要翻译：通常描述了用于在基层上生长极低缺陷密度非极性和半极性III族氮化物层的外延程序，以及所得到的结构。特别地，可以在非极性和半极性基底层上实现III族氮化物层的脉冲选择区域横向过度生长。通过利用新的P-MOCVD或PALE和选择区域的侧向生长，可以在不影响III-N表面的相对较低的生长温度下实现非常高的横向生长条件。

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