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    • 6. 发明申请
    • PROVISION OF ETCH STOP FOR WORDLINES IN A MEMORY DEVICE
    • 为存储设备中的WORDLINES提供蚀刻停止
    • WO2017034709A1
    • 2017-03-02
    • PCT/US2016/043143
    • 2016-07-20
    • INTEL CORPORATION
    • HALLER, Gordon A.LIU, Jun
    • H01L27/115H01L21/768
    • H01L27/11551H01L21/76816H01L21/76834H01L21/76889H01L23/528H01L27/11521H01L27/11524H01L27/11548H01L27/11556H01L27/11575H01L27/11582
    • Embodiments of the present disclosure are directed towards techniques to provide etch stops to the wordlines that form a staircase structure of a 3D memory array. In one embodiment, the apparatus may comprise a 3D memory array having wordlines disposed in a staircase structure in a die. A wordline may include a silicide layer and a spacer disposed to abut the silicide layer around an end of the wordline. The silicide layer and the spacer may form an etch stop of the wordline for a wordline contact structure to electrically connect the wordline with the memory array in response to deposition of the wordline contact structure on the etch stop. The etch stop may be configured to prevent physical or electrical contact of the wordline contact structure with an adjacent wordline of the staircase structure, in order to avoid undesired short circuits. Other embodiments may be described and/or claimed
    • 本公开的实施例涉及向形成3D存储器阵列的阶梯结构的字线提供蚀刻停止点的技术。 在一个实施例中,该装置可以包括具有设置在模具中的阶梯结构中的字线的3D存储器阵列。 字线可以包括硅化物层和设置成邻接字线的端部周围的硅化物层的间隔物。 硅化物层和间隔物可以形成用于字线接触结构的字线的蚀刻停止,以响应于刻蚀停止处的字线接触结构的沉积而将字线与存储器阵列电连接。 蚀刻停止件可以被配置为防止字线接触结构与阶梯结构的相邻字线的物理或电接触,以避免不期望的短路。 可以描述和/或要求保护其他实施例