专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2006082163A1 METHODS OF FORMING SILICIDE 审中-公开
标题翻译：形成硅酮的方法
公开(公告)号：WO2006082163A1
公开(公告)日：2006-08-10
申请号：PCT/EP2006/050498
申请日：2006-01-27
申请人： INFINEON TECHNOLOGIES AG , LIM, Chan , MOON, Bum-Ki
发明人： LIM, Chan , MOON, Bum-Ki
IPC分类号： H01L21/283 , H01L21/336
CPC分类号： H01L21/28097 , H01L21/28518 , H01L29/4975 , H01L29/66545 , H01L29/6656
摘要： Methods of fully suiciding semiconductive materials of semiconductor devices are disclosed. A preferred embodiment comprises depositing an alloy comprised of a first metal and a second metal over a semiconductive material (208). The device is heated, causing atoms (232) of the semiconductive material to move towards and bond to the atoms (234) of the second metal, leaving vacancies in the semiconductive material, and causing atoms (236) of the first metal to move into the vacancies in the semiconductive material.
摘要翻译：公开了半导体器件的半导体材料完全自杀的方法。优选实施例包括在半导体材料（208）上沉积由第一金属和第二金属组成的合金。该装置被加热，使半导体材料的原子（232）向第二金属的原子（234）移动并且结合到第二金属的原子（234），在半导体材料中留下空位，并使第一金属的原子（236）移动到半导体材料的空缺。

2. 发明申请

WO2005045910A1 ELECTRONIC DEVICE AND METHOD FOR ITS FABRICATION 审中-公开
标题翻译：电子设备及其制造方法
公开(公告)号：WO2005045910A1
公开(公告)日：2005-05-19
申请号：PCT/SG2004/000304
申请日：2004-09-17
申请人： INFINEON TECHNOLOGIES AG , MOON, Bum-Ki
发明人： MOON, Bum-Ki
IPC分类号： H01L21/02
CPC分类号： H01L28/84 , H01L21/2855 , H01L28/55
摘要： The present invention relates to a ferroelectric device comprising a ferroelectric capacitor and a method for its fabrication. The Qsw of the ferroelectric capacitor is improved by providing a rugged first electrode. The rugged first electrode causes a subsequently deposited ferroelectric layer to have a substantially hemispherical wavy surface thereby increasing the effective surface area between the ferroelectric layer and the electrodes.
摘要翻译：本发明涉及一种铁电电容器及其制造方法。通过提供坚固的第一电极来改善铁电电容器的Qsw。粗糙的第一电极导致随后沉积的铁电层具有基本上半球形的波浪表面，从而增加铁电层和电极之间的有效表面积。

3. 发明申请

WO2004093168A1 A PROCESS FOR FABRICATION OF FERROELECTRIC DEVICES WITH REDUCED HYDROGEN ION DAMAGE 审中-公开
标题翻译：具有降低氢损伤的电磁装置的制造方法
公开(公告)号：WO2004093168A1
公开(公告)日：2004-10-28
申请号：PCT/SG2004/000065
申请日：2004-03-22
申请人： INFINEON TECHNOLOGIES AG , KABUSHIKI KAISHA TOSHIBA , HORNIK, Karl , ZHUANG, Haoren , MOON, Bum-Ki , HILLIGER, Andreas , NATORI, Katsuaki
发明人： HORNIK, Karl , ZHUANG, Haoren , MOON, Bum-Ki , HILLIGER, Andreas , NATORI, Katsuaki
IPC分类号： H01L21/02
CPC分类号： H01L28/57 , H01L21/02178 , H01L21/022 , H01L21/02266 , H01L21/0228 , H01L21/28568 , H01L21/3141 , H01L21/31616 , H01L28/65 , H01L28/75
摘要： A ferrocapacitor device comprising a ferroelectric capacitor structure which includes a bottom electrode (5), a ferroelectric layer (7), and a top electrode (9), formed over a substructure (1). A first Al 2 0 3 cover layer (15) is deposited over the structure by a physical vapour deposition process (such as sputtering), and a second Al 2 0 3 cover layer (17) is deposited over the first Al 2 0 3 cover layer (15) by atomic layer deposition. The first Al 2 0 3 cover layer (15) protects the capacitor structure during the formation of the second Al 2 0 3 cover layer (17), and the second Al 2 0 3 cover layer (17) protects the capacitor structure during back end processes performed on the FeRAM device.
摘要翻译：一种铁电体器件，包括形成在子结构（1）上的包括底部电极（5），铁电体层（7）和顶部电极（9）的铁电电容器结构。通过物理气相沉积工艺（例如溅射）在结构上沉积第一Al 2 O 3覆盖层（15），并且通过原子层沉积在第一Al 2 O 3覆盖层（15）上沉积第二Al 2 O 3覆盖层（17）。第一Al 2 O 3覆盖层（15）在形成第二Al 2 O 3覆盖层（17）期间保护电容器结构，并且第二Al 2 O 3覆盖层（17）在对FeRAM器件执行的后端处理期间保护电容器结构。

4. 发明申请

WO2004053949A1 FERROELECTRIC CAPACITOR AND PROCESS FOR ITS MANUFACTURE 审中-公开
标题翻译：电力电容器及其制造工艺
公开(公告)号：WO2004053949A1
公开(公告)日：2004-06-24
申请号：PCT/SG2003/000277
申请日：2003-11-24
申请人： INFINEON TECHNOLOGIES AG , KABUSHIKI KAISHA TOSHIBA , MOON, Bum-Ki , BEITEL, Gerhard , ARISUMI, Osamu , ITOKAWA, Hiroshi
发明人： MOON, Bum-Ki , BEITEL, Gerhard , ARISUMI, Osamu , ITOKAWA, Hiroshi
IPC分类号： H01L21/02
CPC分类号： H01L28/56
摘要： In a capacitor and a method for its manufacture, a first electrode layer and a second electrode layer are formed such that a ferroelectric layer is situated between the first and second electrode layer. A first bilayer or multi-layer seed structure is formed between the ferroelectric layer and either the first electrode layer or the second electrode layer.
摘要翻译：在电容器及其制造方法中，形成第一电极层和第二电极层，使得铁电层位于第一和第二电极层之间。在铁电层与第一电极层或第二电极层之间形成第一双层或多层种子结构。

5. 发明申请

WO2005045909A1 FERROELECTRIC CAPACITOR DEVICES AND A METHOD FOR COMPENSATING FOR DAMAGE TO A CAPACITOR CAUSED BY ETCHING 审中-公开
标题翻译：电磁电容器装置和用于补偿由蚀刻引起的电容器损坏的方法
公开(公告)号：WO2005045909A1
公开(公告)日：2005-05-19
申请号：PCT/SG2004/000303
申请日：2004-09-17
申请人： INFINEON TECHNOLOGIES AG , MOON, Bum-Ki
发明人： MOON, Bum-Ki
IPC分类号： H01L21/02
CPC分类号： H01L28/56 , H01L28/75
摘要： A ferroelectric capacitor (17) in which damage caused by etching exposed faces (14) of a ferroelectric layer (2) of the capacitor is compensated by depositing a seeding layer (18) of ferroelectric material such as PZT on one or more exposed faces of the ferroelectric layer and depositing an electrode layer (16) made of conductive material such as platinum on the seeding layer. An oxygen annealing recovery process is applied to the device. The seeding layer can transform the phase of the damaged surfaces from amorphous to crystalline during the recovery annealing process and, at the same time, provide the damaged surfaces of the ferroelectric layer with missing element(s), for example lead. The oxygen necessary for recovery of the damage may be obtained through the platinum layer from the oxygen atmosphere.
摘要翻译：通过在诸如PZT等铁电材料的种子层（18）上沉积电容器的铁电体层（2）的暴露面（14）而形成的腐蚀所致的铁电电容器（17）并且在接种层上沉积由诸如铂的导电材料制成的电极层（16）。将氧退火恢复过程应用于该装置。接种层可以在恢复退火过程中将受损表面的相位从无定形转变为结晶，并且同时提供具有缺失元件（例如铅）的铁电层的受损表面。可以通过来自氧气氛的铂层获得回收损伤所必需的氧。

6. 发明申请

WO2005024919A1 A DEVICE AND METHOD FOR INHIBITING HYDROGEN DAMAGE IN FERROELECTRIC CAPACITOR DEVICES 审中-公开
标题翻译：用于抑制氢电容器装置中的氢损伤的装置和方法
公开(公告)号：WO2005024919A1
公开(公告)日：2005-03-17
申请号：PCT/SG2004/000251
申请日：2004-08-18
申请人： INFINEON TECHNOLOGIES AG , MOON, Bum-Ki , HORNIK, Karl , ZHUANG, Haoren , EGGER, Ulrich , LIAN, Jenny , HILLIGER, Andreas
发明人： MOON, Bum-Ki , HORNIK, Karl , ZHUANG, Haoren , EGGER, Ulrich , LIAN, Jenny , HILLIGER, Andreas
IPC分类号： H01L21/02
CPC分类号： H01L28/57 , H01L27/0805 , H01L27/11507
摘要： A ferroelectric capacitor device comprises a substrate, a contact plug passing through the substrate, a first electrode formed on the substrate, the first electrode being electrically connected to said plug, a ferroelectric layer formed on the first electrode, a second electrode formed on the ferroelectric layer, one or more first encapsulation layers on the second electrode, the encapsulation layers extending over the device, and one or more hydrogen storage material layers on the encapsulation layers. One or more second encapsulation layers may be formed on the one or more hydrogen storage material layers.
摘要翻译：铁电电容器装置包括基板，穿过基板的接触插塞，形成在基板上的第一电极，第一电极电连接到所述插头，形成在第一电极上的铁电层，形成在铁电体上的第二电极层，在第二电极上的一个或多个第一封装层，在器件上延伸的封装层以及封装层上的一个或多个储氢材料层。一个或多个第二封装层可以形成在一个或多个储氢材料层上。

7. 发明申请

WO2005008751A1 MULTI-LAYER BARRIER ALLOWING RECOVERY ANNEAL FOR FERROELECTRIC CAPACITORS 审中-公开
标题翻译：多层障碍物允许用于电容电容器的恢复电极
公开(公告)号：WO2005008751A1
公开(公告)日：2005-01-27
申请号：PCT/SG2004/000192
申请日：2004-07-02
申请人： INFINEON TECHNOLOGIES AG , HILLIGER, Andreas , LIAN, Jingyu , NAGEL, Nicolas , BRUCHHAUS, Rainer , GERNHARDT, Stefan , WELLHAUSEN, Uwe , MOON, Bum-Ki , HORNIK, Karl
发明人： HILLIGER, Andreas , LIAN, Jingyu , NAGEL, Nicolas , BRUCHHAUS, Rainer , GERNHARDT, Stefan , WELLHAUSEN, Uwe , MOON, Bum-Ki , HORNIK, Karl
IPC分类号： H01L21/02
CPC分类号： H01G4/1245 , H01G4/33 , H01L28/57
摘要： A multi-layer barrier (115) for a ferroelectric capacitor (101) includes an outdiffusion barrier layer (115a) permeable to both hydrogen and oxygen. The outdiffusion barrier (115a) layer covers the ferroelectric (103) of the capacitor. Oxygen passes through the outdiffusion barrier layer into the ferroelectric during an oxygen anneal in order to repair damage to the ferroelectric caused during etching. The outdiffusion barrier layer reduces the decomposition of the ferroelectric by blocking molecules leaving the ferroelectric during the oxygen anneal. The multi-layer barrier also includes a hydrogen barrier layer (115b) deposited on the outdiffusion barrier layer after repair of the ferroelectric by the oxygen anneal. The hydrogen barrier layer allows the multi-layer barrier to block the passage of hydrogen into the ferroelectric during back-end processes.
摘要翻译：用于铁电电容器（101）的多层势垒（115）包括可渗透氢和氧的扩散阻挡层（115a）。扩散阻挡层（115a）层覆盖电容器的铁电体（103）。在氧退火期间，氧气通过外扩散阻挡层进入铁电体，以便修复在蚀刻期间引起的铁电体损坏。扩散阻挡层通过在氧退火期间阻挡离开铁电体的分子来减少铁电体的分解。多层阻挡层还包括通过氧退火修复铁电体之后沉积在外扩散阻挡层上的氢阻挡层（115b）。氢阻挡层允许多层屏障在后端工艺期间阻止氢气进入铁电体。

8. 发明申请

WO2003060955A2 BARRIER STACK WITH IMPROVED BARRIER PROPERTIES 审中-公开
标题翻译：具有改进障碍物质的障碍物堆叠
公开(公告)号：WO2003060955A2
公开(公告)日：2003-07-24
申请号：PCT/EP2003/000114
申请日：2003-01-08
申请人： INFINEON TECHNOLOGIES AG , KABUSHIKI KAISHA TOSHIBA
发明人： NAGEL, Nicolas , IMAI, Keitaro , BEITEL, Gerhard, Adolf , HILLIGER, Andreas , MOON, Bum-Ki , YAMAKAWA, Koji
IPC分类号： H01L
CPC分类号： H01L27/11502 , H01L21/28568 , H01L27/11507 , H01L28/55 , H01L28/75
摘要： An improved barrier stack for inhibiting diffusion of atoms or molecules, such as O2 is disclosed. The barrier stack is particularly useful in capacitor over plug structures to prevent plug oxidation which can adversely impact the reliability of the structures. The barrier stack includes first and second barrier layers having mismatched grain boundaries. The barrier layers are selected from, for example, Ir, Ru, Pd, Rh, or alloys thereof. By providing mismatched grain boundaries, the interface of the layers block the diffusion path of oxygen. To further enhance the barrier properties, the first barrier layer is passivated with O2 using, for example, a rapid thermal oxidation. The RTO forms a thin oxide layer on the surface of the first barrier layer. The oxide layer can advantageously promote mismatching of the grain boundaries of the first and second barrier layer.
摘要翻译：公开了用于抑制诸如O 2的原子或分子扩散的改进的阻挡层。势垒堆叠在电容器超过插塞结构中特别有用，以防止插塞氧化，这可能不利地影响结构的可靠性。阻挡层包括具有不匹配晶界的第一和第二阻挡层。阻挡层选自例如Ir，Ru，Pd，Rh或其合金。通过提供错配的晶界，这些层的界面阻挡了氧的扩散路径。为了进一步增强阻挡性能，使用例如快速热氧化，用O 2钝化第一阻挡层。 RTO在第一阻挡层的表面上形成薄的氧化物层。氧化物层可有利地促进第一和第二阻挡层的晶界的失配。

9. 发明申请

WO2003092051A3 BARRIER FOR CAPACITOR OVER PLUG STRUCTURES 审中-公开
公开(公告)号：WO2003092051A3
公开(公告)日：2003-11-06
申请号：PCT/EP2003/004079
申请日：2003-04-17
申请人： INFINEON TECHNOLOGIES AG
发明人： BEITEL, Gerhard-Adolf , NAGEL, Nicolas , MOON, Bum-Ki
IPC分类号： H01L21/02
摘要： An improved barrier stack for reducing plug oxidation in capacitor-over-plug structures is disclosed. The barrier stack is formed on a non-conductive adhesion layer of titanium oxide. The barrier stack includes first and second barrier layers wherein the second barrier layer covers the top surface and sidewalls of the first barrier layer. In one embodiment, the first barrier layer comprises Ir and the second barrier layer comprises IrOx. Above the barrier stack is formed a capacitor.

10. 发明申请

WO2004027871A1 CAPACITOR OVER PLUG STRUCTURE 审中-公开
标题翻译：电容器通过插头结构
公开(公告)号：WO2004027871A1
公开(公告)日：2004-04-01
申请号：PCT/EP2003/008947
申请日：2003-08-12
申请人： INFINEON TECHNOLOGIES AG , KABUSHIKI KAISHA TOSHIBA
发明人： BEITEL, Gerhard , HILLIGER, Andreas , MOON, Bum-Ki , NAGEL, Nicolas , TSUCHIYA, Takamichi , YABUKI, Moto
IPC分类号： H01L27/115
CPC分类号： H01L28/75 , H01L21/28568 , H01L28/60 , H01L28/90
摘要： A capacitor over plug (COP) structure is disclosed. The COP avoids the step which is created in conventional COP structures, which adversely impacts the properties of the capacitor. In one embodiment, the step is avoided by providing a plug having upper and lower portions. The upper portion, which is coupled to the bottom electrode of the capacitor, has substantially the same surface area as the bottom electrode. A barrier layer can be provided between the plug and bottom electrode to avoid oxidation of the plug material.
摘要翻译：公开了一种电容器插头（COP）结构。 COP避免了常规COP结构中产生的步骤，这对电容器的性能产生不利影响。在一个实施例中，通过提供具有上部和下部的插塞来避免该步骤。耦合到电容器的底部电极的上部具有与底部电极基本相同的表面积。可以在塞子和底部电极之间提供阻挡层以避免塞子材料的氧化。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式