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1. 发明申请

WO2007084879A3 LOW RESISTANCE AND INDUCTANCE BACKSIDE THROUGH VIAS AND METHODS OF FABRICATING SAME 审中-公开
标题翻译：通过VIAS的低电阻和电感及其制造方法
公开(公告)号：WO2007084879A3
公开(公告)日：2008-02-21
申请号：PCT/US2007060544
申请日：2007-01-15
申请人： IBM , ERTURK METE , GROVES ROBERT A , JOHNSON JEFFREY B , JOSEPH ALVIN J , LIU QIZHI , SPROGIS EDMUND J , STAMPER ANTHONY K
发明人： ERTURK METE , GROVES ROBERT A , JOHNSON JEFFREY B , JOSEPH ALVIN J , LIU QIZHI , SPROGIS EDMUND J , STAMPER ANTHONY K
IPC分类号： H01L21/00 , H01L21/302 , H01L21/306 , H01L21/44 , H01L21/77
CPC分类号： H01L21/76898 , H01L23/481 , H01L2924/0002 , H01L2924/00
摘要： A backside contact structure and method of fabricating the structure. The method includes: forming a dielectric isolation (250) in a substrate (100), the substrate (100) having a frontside and an opposing backside; forming a first dielectric layer (105) on the frontside of the substrate (100); forming a trench (265C) in the first dielectric layer (105), the trench (265C) aligned over and within a perimeter of the dielectric isolation (250) and extending to the dielectric isolation (250); extending the trench (265C) formed in the first dielectric layer (1 05) through the dielectric isolation (250) and into the substrate (1 00)to a depth (Dl ) less than a thickness of the substrate (1 00); filling the trench (265C) and co-planarizing a top surface of the trench (265C) with a top surface of the first dielectric layer (1 05) to form an electrically conductive through via (270C); and thinning the substrate (100) from a backside of the substrate (100) to expose the through via (270C).
摘要翻译：背面接触结构及其制造方法。该方法包括：在衬底（100）中形成绝缘隔离（250），所述衬底（100）具有前侧和相对的背面; 在所述基板（100）的前侧形成第一介电层（105）; 在所述第一电介质层（105）中形成沟槽（265C），所述沟槽（265C）在所述电介质隔离（250）的周边内并且在所述绝缘隔离（250）的周边内并且延伸到所述电介质隔离（250）; 将形成在第一电介质层（105）中的沟槽（265C）延伸通过电介质隔离（250）并延伸到衬底（100）中至小于衬底厚度（001）的深度（D1）。填充沟槽（265C）并且将沟槽（265C）的顶表面与第一介电层（105）的顶表面共平面化以形成导电通孔（270C）; 以及从所述衬底（100）的背面使所述衬底（100）变薄以暴露所述通孔（270C）。

2. 发明申请

WO2004038916A3 MICRO-ELECTROMECHANICAL VARACTOR WITH ENHANCED TUNING RANGE 审中-公开
标题翻译：具有增强调谐范围的微电子变压器
公开(公告)号：WO2004038916A3
公开(公告)日：2004-08-12
申请号：PCT/EP0312399
申请日：2003-09-18
申请人： IBM , IBM FRANCE
发明人： CHINTHAKINDI ANIL K , GROVES ROBERT A , STEIN KENNETH J , SUBBANNA SESHADRI , VOLANT RICHARD P
IPC分类号： B81B7/00 , B81C1/00 , H01G5/011 , H01G5/18 , H03J3/18 , B81B3/00 , H01G5/16
CPC分类号： H01G5/18 , B81B2201/01 , H01G5/011 , Y10S257/924
摘要： A three-dimensional micro-electromechanical (MEM) varactor is described wherein a movable beam (50) and fixed electrodes (51) are respectively fabricated on separate substrates coupled to each other. The movable beam with comb-drive electrodes are fabricated on the "chip side" while the fixed bottom electrode is fabricated on a separated substrate "carrier side". Upon fabrication of the device on both surfaces of the substrate, the chip side device is diced and "flipped over", aligned and joined to the "carrier" substrate to form the final device. Comb-drive (fins) electrodes are used for actuation while the motion of the electrode provides changes in capacitance. Due to the constant driving forces involved, a large capacitance tuning range can be obtained. The three dimensional aspect of the device avails large surface area. When large aspect ratio features are provided, a lower actuation voltage can be used. Upon fabrication, the MEMS device is completely encapsulated, requiring no additional packaging of the device. Further, since alignment and bonding can be done on a wafer scale (wafer scale MEMS packaging), an improved device yield can be obtained at a lower cost.
摘要翻译：描述了三维微机电（MEM）变容二极管，其中可移动光束（50）和固定电极（51）分别制造在彼此耦合的分离的基板上。具有梳状驱动电极的可移动光束在“芯片侧”上制造，而固定底部电极制造在分离的基板“载体侧”上。在衬底的两个表面上制造器件时，芯片侧器件被切割并“翻转”，对准并接合到“载体”衬底以形成最终器件。梳状驱动（鳍）电极用于致动，同时电极的运动提供电容的变化。由于所涉及的驱动力恒定，可以获得大的电容调谐范围。该装置的三维方面具有较大的表面积。当提供大的纵横比特征时，可以使用较低的致动电压。在制造时，MEMS器件被完全封装，不需要额外的器件封装。此外，由于可以在晶片规模（晶片级MEMS封装）上进行取向和接合，所以可以以更低的成本获得改进的器件产量。

3. 发明申请

WO02073702A9 INTEGRATED TOROIDAL COIL INDUCTORS FOR IC DEVICES 审中-公开
标题翻译：集成器件的集成式电感线圈电感器
公开(公告)号：WO02073702A9
公开(公告)日：2003-03-20
申请号：PCT/US0207992
申请日：2002-03-13
申请人： IBM
发明人： ACOSTA RAUL E , CARASSO MELANIE L , CORDES STEVEN A , GROVES ROBERT A , LUND JENNIFER L , ROSNER JOANNA
IPC分类号： H01F17/00 , H01F17/04 , H01F17/06 , H01F27/00 , H01F27/06 , H01F41/04 , H01L21/02 , H01L27/08 , H01L29/82 , H01L29/00
CPC分类号： H01L28/10 , H01F17/0006 , H01F17/0033 , H01F41/041 , H01L27/08
摘要： A means for fabrication of solenoidal inductors interated in a semiconductor chip is provided. A solenoidal coil (50) is partially embedded in a deep well etched into the chip substrate (10). The non-embedded part (30) of the coil is fabricated as part of BEOL metallization layers (52). This allows for large cross-sectional area of the solenoid turns, tus reducing the turn-to-turn capacitive coupling. Because the solenoidal coils of this invention have a large diameter cross-section, the coil can be made with a large inductance value and yet occupy a small area of the chip. The farbication process includes etching of a deep cavity in the substrate after all the FEOL steps are completed; lining said cavity with a dielectric (14) followed by fabrication of the part of the coil (22) that will be embedded by deposition of a conductive material metal through a mask; deposition of dielectric (24 and 28) and planarization of the same by CMP. After planarization the fabrication of the remaining part (30) of the solenoidal coil is fabricated as part of the metallization in the BEOL (i.e. as line/vias of the BEOL). To further increase the cross section of the solenoidal coil, part of it may be built by electrodeposition through a mask on top of the BEOL layers.
摘要翻译：提供了一种用于制造交错在半导体芯片中的螺线管电感器的装置。螺线管线圈（50）被部分地嵌入到蚀刻到芯片衬底（10）中的深阱中。线圈的非嵌入部分（30）被制造为BEOL金属化层（52）的一部分。这允许螺线管转弯的大截面积，减少匝间电容耦合。由于本发明的螺线管线圈具有大直径的横截面，所以线圈可以制造成具有大的电感值，并且占据芯片的小面积。改进方法包括在所有FEOL步骤完成之后蚀刻衬底中的深空腔; 用电介质（14）衬里所述空腔，随后制造将通过掩模沉积导电材料金属而嵌入的线圈（22）的部分; 介电（24和28）的沉积和CMP的平坦化。在平坦化之后，螺线管线圈的剩余部分（30）的制造被制造为BEOL中的金属化的一部分（即，作为BEOL的线/通路）。为了进一步增加螺线管线圈的横截面，其一部分可以通过电沉积穿过BEOL层顶部的掩模来构建。

4. 发明申请

WO2004078638A3 MICRO-ELECTROMECHANICAL INDUCTIVE SWITCH 审中-公开
标题翻译：微机电感应开关
公开(公告)号：WO2004078638A3
公开(公告)日：2004-10-28
申请号：PCT/US0334630
申请日：2003-10-28
申请人： IBM
发明人： VOLANT RICHARD P , FLORKEY JOHN E , GROVES ROBERT A
IPC分类号： B81B3/00 , H01F7/06 , H01F7/14 , H01H59/00 , H03K17/965 , H01F21/04
CPC分类号： H03K17/965 , H01F7/066 , H01F7/14 , H01F2007/068 , H01H59/0009
摘要： A micro-electromechanical (MEM) switch capable of inductively coupling and decoupling electrical signals is described. The inductive MEM switch consists of a first plurality of coils (20, 30) on a moveable platform (15) and a second plurality of coils (40, 50) on a stationary platform or substrate, the coils on the moveable platform being above or below those in the stationary substrate. Coupling and decoupling occurs by rotating or by laterally displacing the coils of the moveable platform with respect to the coils on the stationary substrate. Diverse arrangements or coils respectively on the moveable and stationary substrates allow for a multi-pole and multi-position switching configurations. The MEM switches described eliminate problems of stiction, arcing and welding of the switch contacts. The MEMS switches of the invention can be fabricated using standard CMOS techniques.
摘要翻译：描述了能够感应耦合和去耦电信号的微机电（MEM）开关。电感式MEM开关包括在可移动平台（15）上的第一组多个线圈（20,30）和固定平台或基板上的第二组多个线圈（40,50），可移动平台上的线圈位于低于固定基板的。通过旋转或相对于固定基板上的线圈横向移动可移动平台的线圈而发生耦合和去耦。分别在可移动和固定基板上的不同布置或线圈允许多极和多位置切换配置。所描述的MEM开关消除了开关触点的静电，电弧和焊接的问题。本发明的MEMS开关可以使用标准CMOS技术制造。

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