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1. 发明申请

WO2008063889A9 CHALCOGENIDE SPUTTERING TARGET 审中-公开
标题翻译： CHALCOGENIDE溅射靶材
公开(公告)号：WO2008063889A9
公开(公告)日：2008-08-21
申请号：PCT/US2007083921
申请日：2007-11-07
申请人： HONEYWELL INT INC , KARDOKUS JANINE , PINTER MICHAEL R , RASTOGI RAVI , MORALES DIANE , PAYTON MICHAEL D
发明人： KARDOKUS JANINE , PINTER MICHAEL R , RASTOGI RAVI , MORALES DIANE , PAYTON MICHAEL D
IPC分类号： C23C14/06 , C23C14/34
CPC分类号： C23C14/0623 , C23C14/3414 , H01L31/0322 , H01L45/06 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/1625 , Y02E10/541 , Y02P70/521
摘要： A PVD component forming method includes identifying two or more solids having different compositions, homogeneously mixing particles of the solids using proportions which yield a bulk formula, consolidating the homogeneous particle mixture to obtain a rigid mass while applying pressure and using a temperature below the minimum temperature of melting or sublimination of the solids, and forming a PVD component including the mass. A chalcogenide PVD component includes a rigid mass containing a bonded homogeneous mixture of particles of two or more solids having different compositions, the mass having a microcomposite structure exhibiting a maximum feature size of 500 µm or less, and one or more of the solids containing a compound of two or more bulk formula elements. An alternative PVD component exhibits a uniform composition with less than 10% difference in atomic compositions from feature to feature.
摘要翻译： PVD成分形成方法包括鉴定具有不同组成的两种或更多种固体，使用产生本体配方的比例均匀混合固体颗粒，在施加压力的同时固结均匀颗粒混合物以获得刚性质量并使用低于最低温度将固体熔化或升华，并形成包含物质的PVD组分。硫族化物PVD部件包括含有具有不同组成的两种或更多种固体的颗粒的结合的均匀混合物的刚性物质，所述物质具有显示最大特征尺寸为500μm或更小的微复合结构，以及一种或多种含有两种或两种以上块状配方元素的化合物。另一种PVD组分显示出均匀的组成，并且每个特征与特征之间的原子组成差异小于10％。

2. 发明申请

WO2008060926A3 ALLOY CASTING APPARATUSES AND CHALCOGENIDE COMPOUND SYNTHESIS METHODS 审中-公开
标题翻译：合金铸造设备和氯化铝化合物合成方法
公开(公告)号：WO2008060926A3
公开(公告)日：2011-04-21
申请号：PCT/US2007084006
申请日：2007-11-08
申请人： HONEYWELL INT INC , KARDOKUS JANINE , PINTER MICHAEL R , RASTOGI RAVI , MORALES DIANE , PAYTON MICHAEL D , SAND NORMAN L , POWERS BRYAN E
发明人： KARDOKUS JANINE , PINTER MICHAEL R , RASTOGI RAVI , MORALES DIANE , PAYTON MICHAEL D , SAND NORMAN L , POWERS BRYAN E
IPC分类号： C01B19/00 , B22F9/08 , C04B35/547 , C23C14/06 , C23C14/34
CPC分类号： C01B19/007 , B22F9/04 , B22F9/08 , B22F2009/041 , B22F2999/00 , C01B19/002 , C01P2002/88 , C01P2004/03 , C22C1/0491 , C23C14/0623 , C23C14/3414 , F27B14/061 , F27D7/00 , Y02P10/253 , B22F2009/043 , B22F2009/049
摘要： A chalcogenide compound synthesis method includes homogeneously mixing solid particles and, during the mixing, imparting kinetic energy to the particle mixture, heating the particle mixture, alloying the elements, and forming alloyed particles containing the compound. Another chalcogenide compound synthesis method includes, under an inert atmosphere, melting the particle mixture in a heating vessel, removing the melt from the heating vessel, placing the melt in a quenching vessel, and solidifying the melt. The solidified melt is reduced to alloyed particles containing the compound. An alloy casting apparatus includes an enclosure, a heating vessel, a flow controller, a collection pan and an actively cooled quench plate. The heating vessel has a bottom-pouring orifice and a pour actuator. The flow controller operates the pour actuator from outside the enclosure. The quench plate is positioned above a bottom of the collection pan and below the bottom-pouring orifice.
摘要翻译：硫族化合物合成方法包括均匀混合固体颗粒，并且在混合过程中，向颗粒混合物赋予动能，加热颗粒混合物，使元素合金化并形成含有该化合物的合金颗粒。另一种硫族化合物的合成方法包括在惰性气氛下，在加热容器中熔化颗粒混合物，从加热容器中除去熔体，将熔体置于淬火容器中，并使熔体固化。将固化的熔体还原成含有该化合物的合金颗粒。合金铸造设备包括外壳，加热容器，流量控制器，收集盘和主动冷却的淬火板。加热容器具有底部浇注孔和倾倒致动器。流量控制器从外壳外部操作倾倒致动器。淬火板位于收集盘的底部上方并在底部倾倒孔下方。

3. 发明申请

WO2008063889A2 CHALCOGENIDE PVD COMPONENTS AND METHODS OF FORMATION 审中-公开
标题翻译： CHALCOGENIDE PVD组分和形成方法
公开(公告)号：WO2008063889A2
公开(公告)日：2008-05-29
申请号：PCT/US2007083921
申请日：2007-11-07
申请人： HONEYWELL INT INC , KARDOKUS JANINE , PINTER MICHAEL R , RASTOGI RAVI , MORALES DIANE , PAYTON MICHAEL D
发明人： KARDOKUS JANINE , PINTER MICHAEL R , RASTOGI RAVI , MORALES DIANE , PAYTON MICHAEL D
IPC分类号： C23C14/06 , C23C14/34
CPC分类号： C23C14/0623 , C23C14/3414 , H01L31/0322 , H01L45/06 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/1625 , Y02E10/541 , Y02P70/521
摘要： A PVD component forming method includes identifying two or more solids having different compositions, homogeneously mixing particles of the solids using proportions which yield a bulk formula, consolidating the homogeneous particle mixture to obtain a rigid mass while applying pressure and using a temperature below the minimum temperature of melting or sublimination of the solids, and forming a PVD component including the mass. A chalcogenide PVD component includes a rigid mass containing a bonded homogeneous mixture of particles of two or more solids having different compositions, the mass having a microcomposite structure exhibiting a maximum feature size of 500 µm or less, and one or more of the solids containing a compound of two or more bulk formula elements. An alternative PVD component exhibits a uniform composition with less than 10% difference in atomic compositions from feature to feature.
摘要翻译： PVD组分形成方法包括鉴定具有不同组成的两种或更多种固体，使用产生本体配方的比例均匀混合固体颗粒，在施加压力并使用低于最低温度的温度下固化均匀的颗粒混合物以获得刚性质量固体的熔融或升华，以及形成包括该物质的PVD组分。硫族化物PVD组分包括含有两种或更多种具有不同组成的固体的粘合的均匀混合物的刚性物质，该物质具有显示最大特征尺寸为500μm或更小的微复合结构，以及一种或多种含有两种或多种主体配方元素的化合物。替代的PVD组分显示出从特征到特征的原子组成差异小于10％的均匀组成。

4. 发明申请

WO2007037796A3 CHALCOGENIDE PVD COMPONENTS AND METHODS OF FORMATION 审中-公开
标题翻译： CHALCOGENIDE PVD组分和形成方法
公开(公告)号：WO2007037796A3
公开(公告)日：2007-10-04
申请号：PCT/US2006031187
申请日：2006-08-10
申请人： HONEYWELL INT INC , RASTOGI RAVI , PINTER MICHAEL R , KARDOKUS JANINE K , PAYTON MICHAEL D
发明人： RASTOGI RAVI , PINTER MICHAEL R , KARDOKUS JANINE K , PAYTON MICHAEL D
IPC分类号： C23C14/06 , C23C14/34
CPC分类号： C23C14/3414 , C01G17/00 , C01P2006/10 , C04B35/547 , C04B35/645 , C04B2235/3287 , C04B2235/446 , C04B2235/5427 , C04B2235/72 , C04B2235/721 , C04B2235/722 , C04B2235/723 , C04B2235/77 , C04B2235/96 , C23C14/0623
摘要： A chalcogenide PVD component forming method includes providing a mixture of solid particles, less than about 90 volume percent (vol%) of the mixture having a crystalline microstructure, and densifying the mixture using pressure and heat. The method includes heat treating the mixture during or after the densifying at conditions sufficient to maintain or increase the percentage of the mixture having a crystalline microstructure without melting the mixture. The densified and heat treated mixture forms a rigid mass exhibiting a bulk formula including at least one element selected from the group consisting of sulfur, selenium, and tellurium. A chalcogenide PVD component includes a rigid mass containing a bonded mixture of solid particles. The mass has about 100 vol% of crystalline microstructure and the solid particles individually exhibit bulk formulas of Ge x S 100-x or Ge x Se 100-x , where x is from 33 to 50.
摘要翻译：硫族化物PVD组分形成方法包括提供具有小于约90体积％（体积％）的具有结晶微结构的混合物的固体颗粒的混合物，并且使用压力和热量使混合物致密化。该方法包括在致密化期间或之后，在足以维持或增加具有结晶微结构的混合物的百分比而不熔化混合物的条件下热处理混合物。致密和热处理的混合物形成表现出包括选自硫，硒和碲中的至少一种元素的主体配方的刚性质量。硫族化物PVD组分包括含有固体颗粒的粘合混合物的刚性质量。该质量具有约100体积％的结晶微结构，并且固体颗粒分别表现出大体上分子式为Ge x S x 100-x x或Ge x Se 100-x

5. 发明申请

WO2005019493A3 TARGET/BACKING PLATE CONSTRUCTIONS, AND METHODS OF FORMING THEM 审中-公开
标题翻译：目标/背板结构及其形成方法
公开(公告)号：WO2005019493A3
公开(公告)日：2005-09-09
申请号：PCT/US2004025801
申请日：2004-08-10
申请人： HONEYWELL INT INC , YI WUWEN , RASTOGI RAVI , KIM JAEYEON , CLARK BRETT M , STROTHERS SUSAN D , PINTER MICHAEL R , KARDOKUS JANINE K
发明人： YI WUWEN , RASTOGI RAVI , KIM JAEYEON , CLARK BRETT M , STROTHERS SUSAN D , PINTER MICHAEL R , KARDOKUS JANINE K
IPC分类号： C23C14/34 , H01J37/34
CPC分类号： H01J37/3435 , C23C14/3407
摘要： The Invention includes target/backing plate constructions and methods of forming target/backing plate constructions. The targets and backing plates can be bonded to one another through an appropriate interlayer. The targets can comprise one or more of aluminum, copper, tantalum and titanium. The interlayer can comprise one or more of silver, copper, nickel, tin, titanium and indium. Target/backing plate constructions of the present invention can have bond strengths of at least 20 ksi and an average grain size within the target of less than 80 microns.
摘要翻译：本发明包括目标/背板结构以及形成靶/背板结构的方法。靶材和背板可以通过适当的中间层彼此粘结。靶可以包括铝，铜，钽和钛中的一种或多种。中间层可以包括银，铜，镍，锡，钛和铟中的一种或多种。本发明的靶/背板结构可以具有至少20ksi的键合强度和小于80微米的目标内的平均晶粒尺寸。

6. 发明申请

WO2013025990A3 LEAD-FREE SOLDER COMPOSITIONS 审中-公开
标题翻译：无铅焊料组合物
公开(公告)号：WO2013025990A3
公开(公告)日：2013-04-25
申请号：PCT/US2012051343
申请日：2012-08-17
申请人： HONEYWELL INT INC , LI JIANXING , PINTER MICHAEL R , STEELE DAVID E
发明人： LI JIANXING , PINTER MICHAEL R , STEELE DAVID E
IPC分类号： B23K35/28
CPC分类号： B23K35/282 , B23K35/025 , C22C1/02 , C22C18/04 , Y10T428/12
摘要： A solder may include zinc, aluminum, magnesium and gallium. The zinc may be present in an amount from about 82% to 96% by weight of the solder. The aluminum may be present in an amount from about 3% to about 15% by weight of the solder. The magnesium may be present in an amount from about 0.5% to about 1.5% by weight of the solder. The gallium may be present in an amount between about 0.5% to about 1.5% by weight of the solder.
摘要翻译：焊料可以包括锌，铝，镁和镓。锌可以以焊料重量的约82％至96％的量存在。铝可以以焊料重量的约3％至约15％的量存在。镁可以以焊料重量的约0.5％至约1.5％的量存在。镓可以以焊料重量的约0.5％至约1.5％的量存在。

7. 发明申请

WO2005021828A2 PVD TARGETS COMPRISING COPPER IN TERNARY MIXTURES, AND METHODS OF FORMING COPPER-CONTAINING PVD TARGETS 审中-公开
标题翻译：在三元混合物中包含铜的PVD目标和形成含铜PVD靶材的方法
公开(公告)号：WO2005021828A2
公开(公告)日：2005-03-10
申请号：PCT/US2004027090
申请日：2004-08-20
申请人： HONEYWELL INT INC , DANIELS BRIAN J , HAUSMAN CHRISTIE J , HUTCHISON CARA L , LEE EAL H , YI WUWEN , STROTHERS SUSAN D , PINTER MICHAEL R , THOMAS MICHAEL E
发明人： DANIELS BRIAN J , HAUSMAN CHRISTIE J , HUTCHISON CARA L , LEE EAL H , YI WUWEN , STROTHERS SUSAN D , PINTER MICHAEL R , THOMAS MICHAEL E
IPC分类号： C23C14/16 , C23C14/34 , H01L21/285 , H01L21/768 , H01L23/532 , C23C14/14 , C23C14/32
CPC分类号： C23C14/3414 , B32B15/012 , C23C14/16 , C23C14/185 , C23C14/3407 , H01L21/2855 , H01L21/76841 , H01L21/76843 , H01L21/76871 , H01L21/76877 , H01L23/53233 , H01L2924/0002 , H01L2924/00
摘要： The invention includes a physical vapor deposition target containing copper and at least two additional elements selected from Ag, Al, As, Au, B, Be, Ca, Cd, Co, Cr, Fe, Ga, Ge, Hf, Hg, In, Ir, Li, Mg, Mn, Nb, Ni, Pb, Pd, Pt, Sb, Sc, Si, Sn, Ta, Te, Ti, V, W, Zn and Zr, a total amount of the at least two additional elements being from 100 ppm to 10 atomic %. The invention additionally includes thin films and interconnects which contain the mixture of copper and at least two added elements. The invention also includes forming a copper-containing target. A mixture of copper and two or more elements is formed. The mixture is cast by melting and is subsequently cooled to form a billet which is worked utilizing one or both of equal channel angular extrusion and thermornechanical processing to form a target.
摘要翻译：本发明包括含有铜和至少两种选自Ag，Al，As，Au，B，Be，Ca，Cd，Co，Cr，Fe，Ga，Ge，Hf，Hg，In， Ir，Li，Mg，Mn，Nb，Ni，Pb，Pd，Pt，Sb，Sc，Si，Sn，Ta，Te，Ti，V，W，Zn和Zr中的至少两种添加元素为100〜10原子％。本发明还包括含有铜和至少两种添加元素的混合物的薄膜和互连。本发明还包括形成含铜靶。形成铜和两种或更多种元素的混合物。混合物通过熔化铸造并随后冷却以形成坯料，其使用等通道角挤压和热机械加工中的一种或两种来形成靶。

8. 发明申请

WO0231218B1 SPUTTER TARGETS 审中-公开
标题翻译： SPUTTER目标
公开(公告)号：WO0231218B1
公开(公告)日：2003-03-20
申请号：PCT/US0132019
申请日：2001-10-11
申请人： HONEYWELL INT INC
发明人： LI JIANXING , PINTER MICHAEL R , WU CHI TSE
IPC分类号： C23C14/34 , C25D7/04 , H01J37/34
CPC分类号： H01J37/342 , C23C14/3414 , C25D7/04
摘要： The invention encompasses a method of forming a container-shaped physical vapor deposition target. A conductive material (56) is provided in a container-shape. The container-shape comprises an interior region and an exterior region, and the conductive material comprises an interior surface along the interior region as well as an exterior surface alon44the exterior region. A sputtering material is electrolytically deposited on at least one of the interior and exterior surfaces of the container-shaped conductive material. The invention also encompasses a container-shaped physical vapor deposition target. The target includes a first conductive material in a container-shape, with the container-shape comprising an interior region and an exterior region. The first conductive material comprises an interior surface (62) along the interior region of the container-shape and an exterior surface (64) along the exterior region of the container shape. The physical vapor deposition target further includes a second conductive material on an entirety of at least one of the interior and exterior surfaces of the first conductive material, with the second conductive material having at least one different metallurgical property than the first conductive material.
摘要翻译：本发明包括形成容器状物理气相沉积靶的方法。导电材料（56）设置成容器形状。容器形状包括内部区域和外部区域，并且导电材料包括沿内部区域的内表面以及外部区域的外部表面。溅射材料电解沉积在容器形导电材料的至少一个内表面和外表面上。本发明还包括容器形物理气相沉积靶。靶包括容器形状的第一导电材料，容器形状包括内部区域和外部区域。第一导电材料包括沿着容器形状的内部区域的内表面（62）和沿着容器形状的外部区域的外表面（64）。物理气相沉积靶还包括在第一导电材料的内表面和外表面的至少一个整体上的第二导电材料，其中第二导电材料具有比第一导电材料至少一种不同的冶金特性。

9. 发明申请

WO0231218A2 CONTAINER-SHAPED PHYSICAL VAPOR DEPOSITION TARGETS, AND METHODS OF FORMING CONTAINER-SHAPED PHYSICAL VAPOR DEPOSITION TARGETS 审中-公开
标题翻译：容器形状的物理蒸气沉积目标和形成容器形状的物理蒸气沉积目标的方法
公开(公告)号：WO0231218A2
公开(公告)日：2002-04-18
申请号：PCT/US0132019
申请日：2001-10-11
申请人： HONEYWELL INT INC
发明人： LI JIANXING , PINTER MICHAEL R , WU CHI TSE
IPC分类号： C23C14/34 , C25D7/04
CPC分类号： H01J37/342 , C23C14/3414 , C25D7/04
摘要： The invention encompasses a method of forming a container-shaped physical vapor deposition target. A conductive material is provided in a container-shape. The container-shape comprises an interior region and an exterior region, and the conductive material comprises an interior surface along the interior region as well as an exterior surface along the exterior region. A sputtering material is electrolytically deposited on at least one of the interior and exterior surfaces of the container-shaped conductive material. The invention also encompasses a container-shaped physical vapor deposition target. The target includes a first conductive material in a container-shape, with the container-shape comprising an interior region and an exterior region. The first conductive material comprises an interior surface along the interior region of the container-shape and an exterior surface along the exterior region of the container shape. The physical vapor deposition target further includes a second conductive material on an entirety of at least one of the interior and exterior surfaces of the first conductive material, with the second conductive material having at least one different metallurgical property than the first conductive material.
摘要翻译：本发明包括形成容器状物理气相沉积靶的方法。导电材料设置成容器形状。容器形状包括内部区域和外部区域，并且导电材料包括沿着内部区域的内表面以及沿着外部区域的外部表面。溅射材料电解沉积在容器形导电材料的至少一个内表面和外表面上。本发明还包括容器形物理气相沉积靶。靶包括容器形状的第一导电材料，容器形状包括内部区域和外部区域。第一导电材料包括沿着容器形状的内部区域的内表面和沿着容器形状的外部区域的外表面。物理气相沉积靶还包括在第一导电材料的内表面和外表面的至少一个整体上的第二导电材料，其中第二导电材料具有比第一导电材料至少一种不同的冶金特性。

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