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1. 发明申请

WO2012165756A1 SOLAR CELL AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：WO2012165756A1
公开(公告)日：2012-12-06
申请号：PCT/KR2012/001814
申请日：2012-03-13
申请人： HANWHA CHEMICAL CORPORATION. , CHO, Jae Eock , LEE, Yong Hwa , LEE, Dong HO , RYU, Hyun Cheol , KIM, Gang Il , HYUN, Deoc Hwan
发明人： CHO, Jae Eock , LEE, Yong Hwa , LEE, Dong HO , RYU, Hyun Cheol , KIM, Gang Il , HYUN, Deoc Hwan
IPC分类号： H01L31/06 , H01L31/0224 , H01L31/042 , H01L31/18
CPC分类号： H01L31/02168 , H01L31/022425 , Y02E10/50
摘要： Provided is a solar cell, including: a semiconductor substrate having a p-n junction; an antireflection film formed on at least one side of the semiconductor substrate; first electrodes formed on the antireflection film; and second electrodes covering the first electrodes, wherein only the first electrodes selectively penetrate the antireflection film and is thus connected with the semiconductor substrate by a punch through process.
摘要翻译：提供一种太阳能电池，包括：具有p-n结的半导体衬底; 形成在所述半导体衬底的至少一侧上的抗反射膜; 在抗反射膜上形成的第一电极; 以及覆盖第一电极的第二电极，其中只有第一电极选择性地穿透防反射膜，并且因此通过冲孔过程与半导体衬底连接。

2. 发明申请

WO2012134061A2 SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：WO2012134061A2
公开(公告)日：2012-10-04
申请号：PCT/KR2012/001371
申请日：2012-02-23
申请人： HANWHA CHEMICAL CORPORATION. , HYUN, Deoc Hwan , CHO, Jae Eock , LEE, Dong Ho , RYU, Hyun Cheol , LEE, Yong Hwa , KIM, Gang Il , AHN, Gui Ryong
发明人： HYUN, Deoc Hwan , CHO, Jae Eock , LEE, Dong Ho , RYU, Hyun Cheol , LEE, Yong Hwa , KIM, Gang Il , AHN, Gui Ryong
IPC分类号： H01L31/042 , H01L31/0236 , H01L31/18
CPC分类号： H01L31/02363 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Provided are a solar cell and a method for manufacturing the same, and more particularly, a solar cell for forming a selective emitter structure and a surface texture using dry plasma etching at the same time, and a method for manufacturing the same. The solar cell includes a silicon semiconductor substrate; an emitter doping layer having a surface, which is textured by a texturing process on an upper portion of the silicon semiconductor substrate and selectively doped; an anti-reflective film layer formed on a front of the substrate; a front electrode accessing to the emitter doping layer by penetrating the anti-reflective film layer; and a rear electrode accessing to a rear of the silicon semiconductor substrate.
摘要翻译：提供了一种太阳能电池及其制造方法，更具体地，涉及一种使用干法等离子刻蚀同时形成选择性发射极结构和表面结构的太阳能电池，以及一种方法为制造相同。太阳能电池包括硅半导体衬底; 发射极掺杂层，所述发射极掺杂层具有通过在所述硅半导体衬底的上部上进行纹理化处理而纹理化并选择性地掺杂的表面; 在基板的正面上形成的抗反射膜层; 通过穿透抗反射膜层接近发射极掺杂层的前电极; 和一个接近硅半导体衬底后部的后电极。

3. 发明申请

WO2013032256A1 METHOD FOR MANUFACTURING BACK CONTACT SOLAR CELL USING PUNCH-THROUGH 审中-公开
标题翻译：使用PUNCH-THROUGH制造回接触太阳能电池的方法
公开(公告)号：WO2013032256A1
公开(公告)日：2013-03-07
申请号：PCT/KR2012/006964
申请日：2012-08-31
申请人： HANWHA CHEMICAL CORPORATION. , LEE, Yong Hwa , CHO, Jae Eock , LEE, Hong Gu , SEO, Se-Young , HYUN, Deoc Hwan , KIM, Gang Il , JUNG, Woo Won
发明人： LEE, Yong Hwa , CHO, Jae Eock , LEE, Hong Gu , SEO, Se-Young , HYUN, Deoc Hwan , KIM, Gang Il , JUNG, Woo Won
IPC分类号： H01L31/042 , H01L31/0216 , H01L31/18
CPC分类号： H01L31/022458 , H01L31/0682 , H01L31/1864 , Y02E10/547 , Y02P70/521
摘要： Provided is a method for manufacturing a back contact solar cell. More particularly, the method includes: (a) forming via holes to penetrate two facing surfaces of a p-type semiconductor substrate by using laser; (b) performing heat treatment on the semiconductor substrate in the presence of n-type impurity, to thereby dope the n-type impurity in the semiconductor substrate; (c) forming an anti-reflective film on one surface of the two surfaces of the semiconductor substrate, and forming a passivation film on an opposite surface to one surface of the semiconductor substrate; (d) applying a first electrode material that penetrates the passivation film at the time of heat treatment, to thereby form first electrodes on opening parts of the via holes which are on the side of the opposite surface and a portion of the passivation film which is adjacent to the opening parts of the via holes, so as to cover the opening parts of the via holes, and applying a second electrode material that does not penetrate the passivation film at the time of heat treatment, to thereby form second electrodes to cover the first electrodes; (e) applying a third electrode material that penetrates the passivation film at the time of heat treatment, to thereby form third electrodes on the passivation film, and applying a fourth electrode material that does not penetrate the passivation film at the time of heat treatment, to thereby form fourth electrodes to cover the third electrodes; and (f) performing heat treatment on the semiconductor substrate having the first, second, third, and fourth electrodes to thereby allow only the first and third electrodes among the first, second, third, and fourth electrodes to be selectively connected with the semiconductor substrate through a punch-through phenomenon.
摘要翻译：提供一种背接触太阳能电池的制造方法。更具体地，该方法包括：（a）通过使用激光形成通孔以穿透p型半导体衬底的两个相对表面; （b）在存在n型杂质的情况下对半导体衬底进行热处理，从而将n型杂质掺杂在半导体衬底中; （c）在半导体衬底的两个表面的一个表面上形成抗反射膜，并在与半导体衬底的一个表面相对的表面上形成钝化膜; （d）施加在热处理时穿透钝化膜的第一电极材料，从而在相对表面侧的通孔的开口部分上形成第一电极，以及钝化膜的一部分邻近通孔的开口部分，以覆盖通孔的开口部分，并且在热处理时施加不穿透钝化膜的第二电极材料，从而形成第二电极以覆盖第一电极; （e）施加在热处理时穿透钝化膜的第三电极材料，从而在钝化膜上形成第三电极，并施加在热处理时不穿透钝化膜的第四电极材料，从而形成覆盖第三电极的第四电极; 和（f）对具有第一，第二，第三和第四电极的半导体衬底进行热处理，从而只允许第一，第二，第三和第四电极中的第一和第三电极与半导体衬底选择性地连接通过穿透现象。

4. 发明申请

WO2013032255A1 METHOD OF FABRICATING EMITTER WRAP THROUGH SOLAR CELL USING ONE-STEP DOPING PROCESS 审中-公开
标题翻译：使用一步式掺杂方法制造通过太阳能电池的发射带的方法
公开(公告)号：WO2013032255A1
公开(公告)日：2013-03-07
申请号：PCT/KR2012/006962
申请日：2012-08-31
申请人： HANWHA CHEMICAL CORPORATION. , CHO, Jae Eock , LEE, Hong Gu , SEO, Se-Young , HYUN, Deoc Hwan , LEE, Yong Hwa , KIM, Gang Il , JUNG, Woo Won
发明人： CHO, Jae Eock , LEE, Hong Gu , SEO, Se-Young , HYUN, Deoc Hwan , LEE, Yong Hwa , KIM, Gang Il , JUNG, Woo Won
IPC分类号： H01L31/042 , H01L31/0216 , H01L31/18
CPC分类号： H01L31/022458 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Provided is a method of fabricating a selective EWT solar cell, including: a) forming via holes penetrating through opposing first and second surfaces of a p-type semiconductor substrate using laser; b) forming an anti-reflective film on the first surface of the semiconductor substrate, and forming a passivation film on the second surface of the semiconductor substrate; c) partially etching the passivation film so as to expose a part of the second surface on which an opening part of each of the via holes is formed; and d) heat-treating the semiconductor substrate under the presence of n-type impurity to dope the n-type impurity on the semiconductor substrate.
摘要翻译：提供一种选择性EWT太阳能电池的制造方法，包括：a）使用激光形成穿透p型半导体衬底的相对的第一和第二表面的通孔; b）在半导体衬底的第一表面上形成抗反射膜，并在半导体衬底的第二表面上形成钝化膜; c）部分地蚀刻钝化膜，以暴露其中形成有每个通孔的开口部分的第二表面的一部分; 以及d）在存在n型杂质的情况下对半导体衬底进行热处理以将n型杂质掺杂在半导体衬底上。

5. 发明申请

WO2014171686A1 SOLAR CELL AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：WO2014171686A1
公开(公告)日：2014-10-23
申请号：PCT/KR2014/003203
申请日：2014-04-14
申请人： HANWHA CHEMICAL CORPORATION
发明人： HWANG, Sung Ho , KIM, Gang Il , KIM, Young Kuk , HONG, Jeong Eui
IPC分类号： H01L31/06 , H01L31/042 , H01L31/0224 , H01L31/18
CPC分类号： H01L31/022425 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The present invention relates to a solar cell and a manufacturing method thereof. The solar cell of the present invention includes a first conductive type substrate that is doped with a first impurity; a second conductive type emitter layer that is positioned on the substrate and doped with a second impurity; a front electrode that is positioned on the emitter layer; and a back electrode that is positioned on the back side of the substrate, in which the second impurity has a concentration peak inside the emitter layer. According to the present invention, provided is a solar cell that is provided with low contact resistance to have improved efficiency of photovoltaic power.
摘要翻译：太阳能电池及其制造方法技术领域本发明涉及一种太阳能电池及其制造方法。本发明的太阳能电池包括掺杂有第一杂质的第一导电型基板; 位于所述衬底上并掺杂有第二杂质的第二导电型发射极层; 位于发射极层上的前电极; 以及位于基板的背侧的背面电极，其中第二杂质在发射极层内部具有浓度峰值。根据本发明，提供了具有低接触电阻以提高光伏电力效率的太阳能电池。

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