专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2008083469A1 LIGHT EMITTING DEVICES WITH A ZINC OXIDE THIN FILM STRUCTURE 审中-公开
标题翻译：具有氧化锌薄膜结构的发光器件
公开(公告)号：WO2008083469A1
公开(公告)日：2008-07-17
申请号：PCT/CA2008/000020
申请日：2008-01-09
申请人： GROUP IV SEMICONDUCTOR , RIOUX, Brian , NOEL, Jean-Paul
发明人： RIOUX, Brian , NOEL, Jean-Paul
IPC分类号： H01L21/04 , H01L21/388 , H01L29/04 , H01L29/12 , H01L29/22 , H01L29/227 , H01L29/40 , H01L33/00
CPC分类号： C09K9/02
摘要： The present invention relates to a sol-gel deposition/heat treatment process, which consistently produces polycrystalline direct bandgap semiconductor, e.g. ZnO, thin films exhibiting a photo luminescent (PL) spectrum at room temperature that is dominated by a single peak, e.g. in the ultraviolet part of the spectrum, in which the PL intensity of the bandgap emission is more than approximately 40 times greater than any deep-level defect emission peak or band. The present invention incorporates such direct bandgap semiconductor, e.g. ZnO, polycrystalline thin films produced by the method of the present invention into electro- luminescent devices that exhibit similarly high ratios of bandgap/deep-level defect emission intensity.
摘要翻译：本发明涉及一种溶胶 - 凝胶沉积/热处理工艺，其一贯地产生多晶直接带隙半导体，例如， ZnO，在室温下显示光致发光（PL）光谱的薄膜由单峰主导，在光谱的紫外线部分，其中带隙发射的PL强度比任何深度缺陷发射峰或带大约40倍以上。本发明结合了这种直接带隙半导体，例如， ZnO，通过本发明的方法生产的多晶薄膜制成显示出类似的高带隙/深能级缺陷发射强度比的电致发光器件。

2. 发明申请

WO2009065215A1 A LIGHT EMITTING DEVICE WITH A STOPPER LAYER STRUCTURE 审中-公开
标题翻译：具有停止层结构的发光装置
公开(公告)号：WO2009065215A1
公开(公告)日：2009-05-28
申请号：PCT/CA2008/002034
申请日：2008-11-20
申请人： GROUP IV SEMICONDUCTOR INC. , MACELWEE, Thomas , NOEL, Jean-Paul , DUCHARME, Dean , XIN, Yongbao
发明人： MACELWEE, Thomas , NOEL, Jean-Paul , DUCHARME, Dean , XIN, Yongbao
IPC分类号： H05B33/02 , H01L29/12 , H05B33/06
CPC分类号： H01L33/02 , H01L33/42
摘要： Electroluminescent (EL) devices structures are provided comprising a hot electron stopper layer structure to capture hot electrons and dissipate their energy, thereby reducing damage to the transparent conducting oxide (TCO) layer and reducing other hot electron effects, such as charging effects, which impact reliability of EL device structures. The stopper layer structure may comprise a single layer or multiple layers provided between the TCO electrode layer and the emitter structure, and may also function to reduce diffusion or chemical interactions between the TCO and the emitter layer structure. Optionally, stopper layers may also be provided within the emitter structure. Suitable stopper layer materials are wideband gap semiconductors or dielectrics, preferably transparent at wavelengths emitted by the EL device characterized by high impact ionization rates, and/or high relative permittivity relative to adjacent layers of the emitter structure.
摘要翻译：提供电致发光（EL）器件结构，其包括热电子阻挡层结构以捕获热电子并耗散其能量，从而减少对透明导电氧化物（TCO）层的损伤并减少其他热电子效应，例如充电效应，其影响 EL器件结构的可靠性。阻挡层结构可以包括设置在TCO电极层和发射极结构之间的单层或多层，并且还可以起到减少TCO和发射极层结构之间的扩散或化学相互作用的作用。可选地，也可以在发射器结构内设置阻挡层。合适的阻挡层材料是宽带间隙半导体或电介质，优选在由EL器件发射的波长处是透明的，其特征在于高冲击电离速率和/或相对于发射极结构的相邻层的高相对介电常数。

3. 发明申请

WO2009033279A1 ZINC OXIDE THIN FILM ELECTROLUMINESCENT DEVICES 审中-公开
标题翻译：氧化锌薄膜电致发光器件
公开(公告)号：WO2009033279A1
公开(公告)日：2009-03-19
申请号：PCT/CA2008/001607
申请日：2008-09-11
申请人： GROUP IV SEMICONDUCTOR, INC. , NOEL, Jean-Paul
发明人： NOEL, Jean-Paul
IPC分类号： H05B33/02 , H01L33/00 , H01L49/02
CPC分类号： C09K11/642 , H05B33/14
摘要： A thin film electro-luminescent device (TFEL) includes an active layer made of a direct bandgap semiconductor material, e.g. zinc oxide, doped with exciton binding centers, such as aluminum, in small amounts, e.g. 0.001 at% to 30.0 at%. The exciton binding centers prevent free excitons, created by impact ionization, from diffusing toward and recombining at native defect centers. To provide a columnar structure, a polycrystalline seed layer is deposited first to provide a template, followed by the deposition of an overlying layer forming columns in accordance with the template.
摘要翻译：薄膜电致发光器件（TFEL）包括由直接带隙半导体材料制成的有源层，例如，掺杂有激子结合中心的氧化锌，例如少量的铝，例如铝。 0.001at％至30.0at％。激子结合中心阻止由冲击电离产生的游离激子在天然缺陷中心扩散和重组。为了提供柱状结构，首先沉积多晶种子层以提供模板，随后沉积根据模板形成柱的上层。

4. 发明申请

WO2011106860A1 DEPOSITION OF THIN FILM DIELECTRICS AND LIGHT EMITTING NANO-LAYER STRUCTURES 审中-公开
标题翻译：薄膜电沉积和发光纳米结构的沉积
公开(公告)号：WO2011106860A1
公开(公告)日：2011-09-09
申请号：PCT/CA2010/000287
申请日：2010-03-01
申请人： GROUP IV SEMICONDUCTOR, INC. , NOEL, Jean-Paul , LI, Ming
发明人： NOEL, Jean-Paul , LI, Ming
IPC分类号： H01L21/469 , G02F1/015 , H01L33/00 , H01L33/34 , H01L49/02 , H01S5/30
CPC分类号： H01L21/02164 , C23C16/0218 , C23C16/345 , C23C16/401 , C23C16/56 , H01L21/0217 , H01L21/022 , H01L21/02312 , H01L21/02337 , H05B33/10
摘要： A method is disclosed for deposition of thin film dielectrics, and in particular for chemical vapour deposition of nano-layer structures comprising multiple layers of dielectrics, such as, silicon dioxide, silicon nitride, silicon oxynitride and/or other silicon compatible dielectrics. The method comprises post-deposition surface treatment of deposited layers with a metal or semiconductor source gas, e.g. a silicon source gas. Deposition of silicon containing dielectrics preferably comprises silane-based chemistry for deposition of doped or undoped dielectric layers, and surface treatment of deposited dielectric layers with silane. Surface treatment provides dielectric layers with improved layer-to-layer uniformity and lateral continuity, and substantially atomically flat dielectric layers suitable for multilayer structures for electroluminescent light emitting structures, e.g. active layers containing rare earth containing luminescent centres. Doped or undoped dielectric thin films or nano-layer dielectric structures may also be provided for other semiconductor devices.
摘要翻译：公开了一种用于沉积薄膜电介质的方法，特别是用于化学气相沉积包括多层电介质的纳米层结构，例如二氧化硅，氮化硅，氮氧化硅和/或其它与硅相容的电介质。该方法包括用金属或半导体源气体沉积表面处理沉积层，例如，硅源气体。含硅电介质的沉积优选包括用于沉积掺杂或未掺杂的电介质层的硅烷基化学，以及用硅烷表面处理沉积的介电层。表面处理提供具有改进的层间均匀性和横向连续性的电介质层，以及适用于电致发光发光结构的多层结构的基本上原子平坦的电介质层。含有含稀土的发光中心的活性层。也可以为其它半导体器件提供掺杂或未掺杂的电介质薄膜或纳米层介电结构。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式