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1. 发明申请

WO2007102885A3 MAGNETIC TUNNEL JUNCTION PRESSURE SENSORS AND METHODS 审中-公开
公开(公告)号：WO2007102885A3
公开(公告)日：2007-09-13
申请号：PCT/US2006/060208
申请日：2006-10-25
申请人： FREESCALE SEMICONDUCTOR INC. , CHUNG, Young Sir , BAIRD, Robert W. , ENGEL, Bradley N.
发明人： CHUNG, Young Sir , BAIRD, Robert W. , ENGEL, Bradley N.
IPC分类号： G11B5/33
摘要： An integrated circuit device (800) is provided which comprises a substrate (801), a conductive line (807) configured to experience a pressure, and a magnetic tunnel junction ("MTJ") core (802) formed between the substrate and the current line. The conductive line (807) is configured to move in response to the pressure, and carries a current which generates a magnetic field. The MTJ core (802) has a resistance value which varies based on the magnetic field. The resistance of the MTJ core (802) therefore varies with respect to changes in the pressure. The MTJ core (802) is configured to produce an electrical output signal which varies as a function of the pressure.

2. 发明申请

WO2007053340A3 MAGNETIC TUNNEL JUNCTION CURRENT SENSORS 审中-公开
公开(公告)号：WO2007053340A3
公开(公告)日：2007-05-10
申请号：PCT/US2006/041147
申请日：2006-10-20
申请人： FREESCALE SEMICONDUCTOR INC. , CHUNG, Young Sir , BAIRD, Robert W. , DURLAM, Mark A. , GRYNKEWICH, Gregory W. , SALTER, Eric J. , ZUO, Jiang-Kai
发明人： CHUNG, Young Sir , BAIRD, Robert W. , DURLAM, Mark A. , GRYNKEWICH, Gregory W. , SALTER, Eric J. , ZUO, Jiang-Kai
IPC分类号： G11C11/00
摘要： An integrated circuit device (600) is provided which includes an active circuit component (604, 804) and a current sensor (602, 802). The active circuit component (604, 804) may be coupled between a first conductive layer (206) and a second conductive layer (210), and is configured to produce a first current. The current sensor (602, 802) is disposed over the active circuit component. The current sensor (602, 802) may comprise a Magnetic Tunnel Junction ("MTJ") core disposed between the first conductive layer (206) and the second conductive layer (210). The MTJ core is configured to sense the first current and produce a second current based on the first current sensed at the MTJ core.

3. 发明申请

WO2008011210A1 SEMICONDUCTOR DEVICE WITH UNDER-FILLED HEAT EXTRACTOR 审中-公开
标题翻译：具有下填充热萃取器的半导体器件
公开(公告)号：WO2008011210A1
公开(公告)日：2008-01-24
申请号：PCT/US2007/067916
申请日：2007-05-01
申请人： FREESCALE SEMICONDUCTOR INC. , CHUNG, Young Sir , BAIRD, Robert W.
发明人： CHUNG, Young Sir , BAIRD, Robert W.
IPC分类号： H01L21/02
CPC分类号： H01L29/0657 , H01L21/84 , H01L23/3677 , H01L2924/0002 , H01L2924/12044 , H01L2924/3011 , H01L2924/00
摘要： Structure (40, 61-13, 61-15, 61-18, 61-19) and method (60-5... 60-19, 100, 200) are provided for a semiconductor device (40, 61-13, 61-15, 61-18, 61-19) with under-filled heat extractor(s) (46, 46', 78, 78'). The device (40, 61-13, 61-15, 61-18, 61-19) comprises a substrate (48, 72) with upper (37) and lower (63, 73) surfaces. A semiconductor (38, 72) is located proximate the upper surface (37) with a device region (26) therein. One or more cavities (67, 77) underlying the device region (26) are etched in the substrate (48, 72) from the lower surface (63, 73). A higher thermal conductivity material (68) versus the substrate (48, 72) fills the one or more cavities (67) and has an exposed surface (69, 69', 79, 79') underlying the device region (26) at or beyond the lower surface (63, 73). This provides the under-filled heat extractor(s) (46, 46', 78, 78'). A composite substrate (48) is preferred, having a first semiconductor (38) extending to the upper surface (37) containing the device region (26), a second semiconductor (42) extending to the lower surface (63) and an insulating layer (36) therebetween, wherein the one or more cavities (67) extend from the lower surface (63) to the insulating layer (36) and the etch depth (671) is self limiting.
摘要翻译：提供了一种半导体器件（40,61-13,61-19,61-15,61-18,61-19）和方法（60-5 ... 60-19,100,200）（46,46'，78,78'）。装置（40,61-13,61-15,61-18,61-19）包括具有上（37）和下（63,73）表面的基底（48,72）。半导体（38,72）位于靠近上表面（37）处，其中具有器件区域（26）。下部表面（63,73）在衬底（48,72）中蚀刻位于器件区域（26）下面的一个或多个腔体（67,77）。较高的导热材料（68）相对于基底（48,72）填充一个或多个空腔（67），并且在装置区域（26）下方的暴露表面（69,69'，79,79'）处于或超出下表面（63,73）。这提供了未填充的散热器（46,46'，78,78'）。复合衬底（48）是优选的，具有延伸到包含器件区域（26）的上表面（37）的第一半导体（38），延伸到下表面（63）的第二半导体（42）和绝缘层（36），其中所述一个或多个空腔（67）从所述下表面（63）延伸到所述绝缘层（36），并且所述蚀刻深度（671）是自限制的。

4. 发明申请

WO2007041007A2 MAGNETIC TUNNEL JUNCTION TEMPERATURE SENSORS 审中-公开
标题翻译：磁性隧道接头温度传感器
公开(公告)号：WO2007041007A2
公开(公告)日：2007-04-12
申请号：PCT/US2006/036831
申请日：2006-09-20
申请人： FREESCALE SEMICONDUCTOR INC. , CHUNG, Young Sir , BAIRD, Robert W. , DURLAM, Mark A.
发明人： CHUNG, Young Sir , BAIRD, Robert W. , DURLAM, Mark A.
IPC分类号： G11B5/33
CPC分类号： G11C11/16 , G01K7/01 , G11C29/50 , G11C29/50008 , G11C2029/5002
摘要： An integrated circuit device (600) is provided which includes a heat source (604) disposed in a substrate (602), and a Magnetic Tunnel Junction ("MTJ") temperature sensor (608) disposed over the heat source.
摘要翻译：提供了集成电路装置（600），其包括设置在基板（602）中的热源（604）和设置在热源上方的磁隧道结（“MTJ”）温度传感器（608）。

5. 发明申请

WO2007053341A2 METHODS OF IMPLEMENTING MAGNETIC TUNNEL JUNCTION CURRENT SENSORS 审中-公开
标题翻译：实施磁性隧道结电流传感器的方法
公开(公告)号：WO2007053341A2
公开(公告)日：2007-05-10
申请号：PCT/US2006/041148
申请日：2006-10-20
申请人： FREESCALE SEMICONDUCTOR INC. , CHUNG, Young Sir , BAIRD, Robert W. , DURLAM, Mark A.
发明人： CHUNG, Young Sir , BAIRD, Robert W. , DURLAM, Mark A.
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , H01L27/228
摘要： An integrated circuit device (800) is provided which comprises a substrate (801), a conductive line (807) configured to experience a pressure, and a magnetic tunnel junction ("MTJ") core (802) formed between the substrate and the current line. The conductive line (807) is configured to move in response to the pressure, and carries a current which generates a magnetic field. The MTJ core (802) has a resistance value which varies based on the magnetic field. The resistance of the MTJ core (802) therefore varies with respect to changes in the pressure. The MTJ core (802) is configured to produce an electrical output signal which varies as a function of the pressure.
摘要翻译：提供集成电路器件（800），其包括衬底（801），被配置为经历压力的导线（807）和磁隧道结（“MTJ”）芯（ 802）形成在衬底和电流线之间。导线（807）被配置为响应于压力而移动，并且承载产生磁场的电流。 MTJ芯（802）具有基于磁场而变化的电阻值。 MTJ芯（802）的电阻因此相对于压力的变化而变化。 MTJ核心（802）被配置为产生电输出信号，其随着压力而变化。

6. 发明申请

WO2007040991A2 MAGNETIC TUNNEL JUNCTION TEMPERATURE SENSORS AND METHODS 审中-公开
标题翻译：磁性隧道结温度传感器及方法
公开(公告)号：WO2007040991A2
公开(公告)日：2007-04-12
申请号：PCT/US2006/036634
申请日：2006-09-20
申请人： FREESCALE SEMICONDUCTOR INC. , CHUNG, Young Sir , BAIRD, Robert W. , DURLAM, Mark A.
发明人： CHUNG, Young Sir , BAIRD, Robert W. , DURLAM, Mark A.
IPC分类号： H01L21/00 , H01L21/336
CPC分类号： H01L27/228 , G01K7/36 , Y10T428/1114
摘要： Techniques of sensing a temperature of a heat source disposed in a substrate of an integrated circuit (600) are provided. According to one exemplary method, a Magnetic Tunnel Junction ("MTJ") temperature sensor (608) is provided over the heat source (604). The MTJ temperature sensor comprises an MTJ core configured to output a current during operation thereof. The value of the current varies based on a resistance value of the particular MTJ core. The resistance value of the MTJ core varies as a function of the temperature of the heat source. A value of the current of the MTJ core can then be associated with a corresponding temperature of the heat source.
摘要翻译：提供了感测设置在集成电路（600）的基板中的热源的温度的技术。根据一个示例性方法，在热源（604）之上提供磁隧道结（“MTJ”）温度传感器（608）。 MTJ温度传感器包括被配置为在其操作期间输出电流的MTJ内核。电流值根据特定MTJ磁芯的电阻值而变化。 MTJ芯的电阻值随着热源的温度而变化。然后，MTJ芯的电流的值可以与热源的相应温度相关联。

7. 发明申请

WO2007018811A2 MAGNETIC TUNNEL JUNCTION SENSOR METHOD 审中-公开
标题翻译：磁性隧道结传感器方法
公开(公告)号：WO2007018811A2
公开(公告)日：2007-02-15
申请号：PCT/US2006/025259
申请日：2006-06-28
申请人： FREESCALE SEMICONDUCTOR , CHUNG, Young Sir , BAIRD, Robert W.
发明人： CHUNG, Young Sir , BAIRD, Robert W.
IPC分类号： H01L21/00
CPC分类号： G01R33/093 , B82Y25/00 , B82Y40/00 , G01R33/098 , G11C11/16 , H01F41/307
摘要： Methods and apparatus are provided for sensing physical parameters. The apparatus (30) comprises a magnetic tunnel junction (MTJ) (32) and a magnetic field source (34) whose magnetic field (35) overlaps the MTJ and whose proximity to the MTJ varies in response to an input to the sensor. The MTJ comprises first and second magnetic electrodes (36, 38) separated by a dielectric (37) configured to permit significant tunneling conduction therebetween. The first magnetic electrode has its spin axis pinned and the second magnetic electrode has its spin axis free. The magnetic field source is oriented closer to the second magnetic electrode than the first magnetic electrode. The overall sensor dynamic range is extended by providing multiple electrically coupled sensors receiving the same input but with different individual response curves and desirably but not essentially formed on the same substrate.
摘要翻译：提供了用于感测物理参数的方法和设备。装置（30）包括磁性隧道结（MTJ）（32）和磁场源（34），磁性源的磁场（35）与MTJ重叠，并且其与MTJ的接近度响应于到传感器的输入而变化。 MTJ包括由电介质（37）分开的第一和第二磁电极（36,38），电介质（37）配置为允许其间的显着的隧道传导。第一磁性电极的自旋轴固定，第二磁性电极的自旋轴自由。磁场源比第一磁性电极更靠近第二磁性电极。整个传感器动态范围通过提供多个电耦合传感器来扩展，所述多个电耦合传感器接收相同的输入但具有不同的单独响应曲线并且理想地但不基本形成在相同衬底上。

8. 发明申请

WO2007016010A2 TUNNEL JUNCTION SENSOR WITH MAGNETIC CLADDING 审中-公开
标题翻译：隧道式连接传感器
公开(公告)号：WO2007016010A2
公开(公告)日：2007-02-08
申请号：PCT/US2006/028574
申请日：2006-07-24
申请人： FREESCALE SEMICONDUCTOR , CHUNG, Young Sir , BAIRD, Robert W.
发明人： CHUNG, Young Sir , BAIRD, Robert W.
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： G01R33/06 , B82Y25/00 , G01R33/093 , G01R33/098
摘要： Methods and apparatus are provided for sensing physical parameters. The apparatus (30) comprises a magnetic tunnel junction (MTJ) [32] and a magnetic field source (34) whose magnetic field (35) overlaps the MTJ and whose proximity to the MTJ varies in response to an input to the sensor. A magnetic shield (33) is provided at least on a face of the MFS away from the MTJ. The MTJ comprises first and second magnetic electrodes (36, 38) separated by a dielectric (37) configured to permit significant tunneling conduction therebetween. The first magnetic region has its spin axis pinned and the second magnetic electrode has its spin axis free. The magnetic field source is oriented closer to the second magnetic electrode than the first magnetic electrode. The overall sensor dynamic range is extended by providing multiple electrically coupled sensors receiving the same input but with different individual response curves and desirably but not essentially formed on the same substrate.
摘要翻译：提供了用于感测物理参数的方法和装置。该装置（30）包括一个磁性隧道结（MTJ）[32]和一个磁场源（34），其磁场（35）与MTJ重叠，并且其与MTJ的接近度响应于传感器的输入而变化。至少在远离MTJ的MFS的面上设置磁屏蔽（33）。 MTJ包括由电介质（37）分开的第一和第二磁极（36,38），其被配置为允许它们之间的显着的隧道传导。第一磁性区域的自旋轴被固定，第二磁极的自由轴自由。磁场源比第一磁极更靠近第二磁极。通过提供多个电耦合传感器来接收相同的输入但是具有不同的单个响应曲线并且期望地但不是基本上形成在相同的基板上来扩展总传感器动态范围。

9. 发明申请

WO2007005303A3 MRAM EMBEDDED SMART POWER INTEGRATED CIRCUITS 审中-公开
公开(公告)号：WO2007005303A3
公开(公告)日：2007-01-11
申请号：PCT/US2006/024228
申请日：2006-06-22
申请人： FREESCALE SEMICONDUCTOR , GRYNKEWICH, Gregory W. , CHUNG, Young Sir , BAIRD, Robert W. , DURLAM, Mark A. , SALTER, Eric J.
发明人： GRYNKEWICH, Gregory W. , CHUNG, Young Sir , BAIRD, Robert W. , DURLAM, Mark A. , SALTER, Eric J.
IPC分类号： G11C11/00
摘要： An integrated circuit device (300) includes a magnetic random access memory ("MRAM") architecture and a smart power integrat circuit architecture formed on the same substrate (302) using the same fabrication process technology The fabrication process technology is a modular process having a front end process and a back end process In the example embodiment, the smart power architecture includes a power circuit component (304), a digital logic component (306), and an analog control component (312) form by the front end process, and a sensor architecture (308) formed by the back end process The MRAM architecture (310) includes an MRAM circuit component (314) formed by the front end process and an MRAM cell array (316) formed by the back end process In one practical embodiment, the sensor architecture (308) includes a sensor component that is formed from the same magnetic tunnel junction core material utilized by the MRAM cell array (316).

10. 发明申请

WO2008024572A2 SUPERJUNCTION TRENCH DEVICE AND METHOD 审中-公开
标题翻译：超级接合装置和方法
公开(公告)号：WO2008024572A2
公开(公告)日：2008-02-28
申请号：PCT/US2007/073837
申请日：2007-07-19
申请人： FREESCALE SEMICONDUCTOR INC. , DE FRESART, Edouard D. , BAIRD, Robert W.
发明人： DE FRESART, Edouard D. , BAIRD, Robert W.
IPC分类号： H01L21/336
CPC分类号： H01L29/7813 , H01L29/0634 , H01L29/1054 , H01L29/165 , H01L29/42368 , H01L29/66734
摘要： Semiconductor structures and methods are provided for a semiconductor device (40) employing a superjunction structure (41) and overlying trench (91) with embedded control gate (48). The method comprises, forming (52-6, 52-9) interleaved first (70-1, 70-2, 70-3, 70-4, etc.) and second (74-1, 74-2, 74-3, etc.) spaced-apart regions of first (70) and second (74) semiconductor materials of different conductivity type and different mobilities so that, in a first embodiment, the second semiconductor material (74) has a higher mobility for the same carrier type than the first semiconductor material (70), and providing (52-14) an overlying third semiconductor material (82) in which a trench (90, 91) is formed with sidewalls (913) having thereon a fourth semiconductor material (87) that has a higher mobility than the third material (82), adapted to carry current (50) between source regions (86), through the fourth (87) semiconductor material in the trench (91) and the second semiconductor material (74) in the device drift space (42) to the drain (56). In a further embodiment, the first (70) and third (82) semiconductor materials are relaxed materials and the second (74) and fourth (87) semiconductor materials are strained semiconductor materials.
摘要翻译：半导体结构和方法被提供用于采用超级结结构（41）并覆盖具有嵌入式控制栅极（48）的沟槽（91）的半导体器件（40）。该方法包括：形成（52-6,52-9）交错的第一（70-1,70-2,70-3,70-4等）和第二（74-1,74-2,74-3）等）第一半导体材料（70）和第二半导体材料（74）的不同导电类型和不同迁移率的半导体材料的间隔开的区域，使得在第一实施例中，第二半导体材料（74）对于同一载体（70），以及提供（52-14）其中形成沟槽（90,91）的上覆的第三半导体材料（82），其上具有第四半导体材料（87）的侧壁（913），其具有比第三材料（82）更高的迁移率，适于在源极区域（86）之间，沟槽（91）中的第四（87）半导体材料和第二半导体材料（74）中承载电流（50）器件漂移空间（42）流向漏极（56）。在另一实施例中，第一（70）和第三（82）半导体材料是松弛材料，第二（74）和第四（87）半导体材料是应变半导体材料。

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