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1. 发明申请

WO2010051982A8 METHOD AND DEVICE FOR PLASMA TREATMENT OF A FLAT SUBSTRATE 审中-公开
标题翻译：等离子体处理平板基板的方法和装置
公开(公告)号：WO2010051982A8
公开(公告)日：2010-08-19
申请号：PCT/EP2009007905
申请日：2009-11-04
申请人： FRAUNHOFER GES FORSCHUNG , LEYBOLD OPTICS GMBH , UNIV RUHR BOCHUM , BECKMANN RUDOLF , GEISLER MICHAEL , ZEUNER ARNDT , FIEDLER MARKS , GRABOSCH GUENTER , PFLUG ANDREAS , CZARNETZKI UWE , BRINKMANN RALF-PETER , SIEMERS MICHAEL
发明人： BECKMANN RUDOLF , GEISLER MICHAEL , ZEUNER ARNDT , FIEDLER MARKS , GRABOSCH GUENTER , PFLUG ANDREAS , CZARNETZKI UWE , BRINKMANN RALF-PETER , SIEMERS MICHAEL
IPC分类号： H01J37/32
CPC分类号： H01J37/32165 , H01J37/32091
摘要： Method and device for the plasma treatment of a substrate in a plasma device, wherein - the substrate (110) is arranged between an electrode (112) and a counter-electrode (108) having a distance d between a surface area of the substrate to be treated and the electrode, - a capacitively coupled plasma discharge is excited, forming a DC self-bias between the electrode (112) and the counter-electrode (108), - in an area of the plasma discharge between the surface area to be treated and the electrode having a quasineutral plasma bulk (114), a quantity of at least one activatable gas species, to which a surface area of the substrate to be treated is subjected, is present - it is provided that a plasma discharge is excited, - wherein the distance d has a value comparable to s = se+sg, where se denotes a thickness of a plasma boundary layer (119) in front of the electrode, and sg denotes a thickness of a plasma boundary layer (118) in front of the substrate surface to be treated or - wherein the quasineutral plasma bulk (114) between the surface area to be treated and the electrode has a linear extension dp, where dp
摘要翻译：一种用于在等离子体装置的基板的等离子体处理方法和装置，其特征在于， - 一个电极（112）和带之间的距离d的对置电极（108）之间的所述衬底（110）被放置在基板和电极表面区域被处理， - 所述间电极（112）和对置电极（108）与DC赛义夫的形成的电容耦合等离子体放电 - 偏压被激励时， - 在所述表面之间的等离子体放电的区域来进行处理区域和所述电极与准中性等离子体散装（114）的至少一个的量活化Gasspezie存在时，与其中待处理表面被施加在衬底的区域中， - 它提供了一个等离子体放电被激发， - 其中所述距离d具有值这与S = S + SG，其中知的厚度的在电极前面的等离子体边缘层（119）和等离子体边缘层（118）的厚度，称为或之前的经处理的基材表面 - 在其中间的准中性等离子体散装（114）要被处理的表面区域和所述电极具有线性膨胀DP DP <1 / 3D，DP

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