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2. 发明申请

WO1994013010A1 PROCESS OF SHAPING FEATURES OF SEMICONDUCTOR DEVICES 审中-公开
标题翻译：形成半导体器件特征的工艺
公开(公告)号：WO1994013010A1
公开(公告)日：1994-06-09
申请号：PCT/US1992010151
申请日：1992-11-25
申请人： FEI COMPANY
发明人： FEI COMPANY , SWANSON, Lynwood, W. , LINDQUIST, John, M.
IPC分类号： H01L21/306
CPC分类号： H01J37/3056 , H01J2237/006 , H01L21/30621 , H01L21/3065 , H01L21/32136
摘要： Semiconductor devices are modified and/or repaired by a gas enhanced physical puttering process. A sample (22) is positioned on a movable X-Y stage (24) located within a lower chamber (26) which is evacuated and under the control of vacuum controller (32). In an evacuated envelop (10) a focused ion beam (18) passes from a liquid metal ion source (14) through column (16) and deflection means (20) and is scanned over an area to be removed on the sample (22). Iodine vapor from source (46) is directed toward the same area to aid in the selective sputtering by enabling a chemical reaction at the scanned area. The iodine may be initially handled in a solid state and is then heated inside the focused ion beam system without presenting a toxic hazard.
摘要翻译：半导体器件通过气体增强的物理推杆过程进行修改和/或修复。样品（22）定位在位于下室（26）内的可移动X-Y台（24）上，该下室（28）被抽真空并在真空控制器（32）的控制下。在抽真空的包络（10）中，聚焦离子束（18）从液态金属离子源（14）通过色谱柱（16）和偏转装置（20）传送并扫描在样品（22）上待除去的区域上，。来自源极（46）的碘蒸气被引向相同的区域，以通过在扫描区域进行化学反应来帮助选择性溅射。碘可以最初以固态处理，然后在聚焦离子束系统内被加热，而不会产生毒性危险。

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