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2. 发明申请

WO2008091285A2 DONOR ELEMENTS AND PROCESSES FOR THERMAL TRANSFER OF NANOPARTICLE LAYERS 审中-公开
标题翻译：纳米颗粒层的热传递的供体元件和过程
公开(公告)号：WO2008091285A2
公开(公告)日：2008-07-31
申请号：PCT/US2007/016120
申请日：2007-07-16
申请人： E. I. DU PONT DE NEMOURS AND COMPANY , ANDREWS, Gerald, Donald , BAILEY, Richard, Kevin , BLANCHET, Graciela, Beatriz , CASPAR, Jonathan, V. , CATRON, John, W. , CHESTERFIELD, Reid, John , FELDER, Thomas, C. , GAO, Feng , GLICKSMAN, Howard, David , GOLDFINGER, Marc, B. , HARMER, Mark, Andrew , JAYCOX, Gary, Delmar , JOHNSON, Lynda, Kaye , KEUSSEYAN, Roupen, Leon , KEYS, Dalen, E. , MALAJOVICH, Irina , MARSHALL, William, J. , MCCORD, Elizabeth, Forrester , MCEWEN, Charles, Nehemiah , METH, Jeffrey, Scott , NUNES, Geoffrey , SCHIFFINO, Rinaldo, S. , SHANNON, Paul, J. , SHARP, Kenneth, George , TASSI, Nancy, G. , VISSCHER, Karyn, B.
发明人： ANDREWS, Gerald, Donald , BAILEY, Richard, Kevin , BLANCHET, Graciela, Beatriz , CASPAR, Jonathan, V. , CATRON, John, W. , CHESTERFIELD, Reid, John , FELDER, Thomas, C. , GAO, Feng , GLICKSMAN, Howard, David , GOLDFINGER, Marc, B. , HARMER, Mark, Andrew , JAYCOX, Gary, Delmar , JOHNSON, Lynda, Kaye , KEUSSEYAN, Roupen, Leon , KEYS, Dalen, E. , MALAJOVICH, Irina , MARSHALL, William, J. , MCCORD, Elizabeth, Forrester , MCEWEN, Charles, Nehemiah , METH, Jeffrey, Scott , NUNES, Geoffrey , SCHIFFINO, Rinaldo, S. , SHANNON, Paul, J. , SHARP, Kenneth, George , TASSI, Nancy, G. , VISSCHER, Karyn, B.
IPC分类号： H01L51/05 , H01L51/40 , H01L51/30
CPC分类号： H01L51/0013 , H01L51/0545 , H05K1/097 , H05K3/046 , H05K2203/0528 , H05K2203/107 , Y10T428/24901
摘要： The invention discloses processes for thermal transfer patterning of a nanoparticle layer and a corresponding proximate portion of a carrier layer, and optionally additional transfer layers, together onto a thermal imaging receiver. The invention is useful for dry fabrication of electronic devices. Additional embodiments of the invention include multilayer thermal imaging donors comprising in layered sequence: a base film, a carrier layer and a nanoparticle layer. The carrier layer can be a dielectric or conducting layer. When the carrier layer is a dielectric layer, the base film includes a light attenuating agent in the form of a dye or pigment.
摘要翻译：本发明公开了将纳米颗粒层和载体层的相应近端部分以及可选地附加的转印层一起热转印图案化在热成像接收器上的方法。本发明可用于干式制造电子器件。本发明的另外的实施方案包括多层热成像供体，其以分层顺序包括：基膜，载体层和纳米粒子层。载体层可以是电介质或导电层。当载体层是介电层时，基膜包含染料或颜料形式的光衰减剂。

3. 发明申请

WO2008010982A2 THERMALLY IMAGEABLE DIELECTRIC LAYERS, THERMAL TRANSFER DONORS AND RECEIVERS 审中-公开
标题翻译：热成像介质层，热转印器和接收器
公开(公告)号：WO2008010982A2
公开(公告)日：2008-01-24
申请号：PCT/US2007/016118
申请日：2007-07-16
申请人： E. I. DU PONT DE NEMOURS AND COMPANY , ANDREWS, Gerald, Donald , BAILEY, Richard, Kevin , BLANCHET, Graciela, Beatriz , CASPAR, Jonathan, V. , CATRON, John, W. , CHESTERFIELD, Reid, John , GAO, Feng , GOLDFINGER, Marc, B. , JAYCOX, Gary, Delmar , JOHNSON, Lynda, Kaye , MALAJOVICH, Irina , MARSHALL, William, J. , MCCORD, Elizabeth, Forrester , MCEWEN, Charles, Nehemiah , METH, Jeffrey, Scott , NUNES, Geoffrey , O'NEIL, Gerard , SHANNON, Paul, J. , SHARP, Kenneth, George , VISSCHER, Karyn, B.
发明人： ANDREWS, Gerald, Donald , BAILEY, Richard, Kevin , BLANCHET, Graciela, Beatriz , CASPAR, Jonathan, V. , CATRON, John, W. , CHESTERFIELD, Reid, John , GAO, Feng , GOLDFINGER, Marc, B. , JAYCOX, Gary, Delmar , JOHNSON, Lynda, Kaye , MALAJOVICH, Irina , MARSHALL, William, J. , MCCORD, Elizabeth, Forrester , MCEWEN, Charles, Nehemiah , METH, Jeffrey, Scott , NUNES, Geoffrey , O'NEIL, Gerard , SHANNON, Paul, J. , SHARP, Kenneth, George , VISSCHER, Karyn, B.
IPC分类号： H01G4/14 , H01L21/02 , H01L23/532 , H01L51/00 , B41M5/382 , B41M5/26
CPC分类号： H01L21/02118 , B41M5/38214 , B41M5/395 , B41M5/46 , B41M5/465 , B41M2205/06 , C08J7/123 , H01G4/18 , H01G4/33 , H01L21/02288 , H01L21/312 , H01L51/0035 , H01L51/0043 , Y10S430/106 , Y10T428/24942 , Y10T428/25 , Y10T428/31909 , Y10T428/31928
摘要： The invention is related to thermal imageable dielectric layers and thermal transfer donors and receivers comprising dielectric layers. The thermal transfer donors are useful in making electronic devices by thermal transfer of dielectric layers having excellent resistivity, good transfer properties and good adhesion to a variety of receivers.
摘要翻译：本发明涉及可热成像的电介质层和包含电介质层的热转移供体和接收器。热转移供体可用于通过电介质层的热传递制造电子器件，所述电介质层具有优异的电阻率，良好的转移性能和对各种接收器的良好粘合性。

4. 发明申请

WO2008010978A2 METAL COMPOSITIONS, THERMAL IMAGING DONORS AND PATTERNED MULTILAYER COMPOSITIONS DERIVED THEREFROM 审中-公开
标题翻译：金属组合物，热成像助剂和图案化的多层复合材料
公开(公告)号：WO2008010978A2
公开(公告)日：2008-01-24
申请号：PCT/US2007/016111
申请日：2007-07-16
申请人： E. I. DU PONT DE NEMOURS AND COMPANY , BAILEY, Richard, Kevin , BLANCHET, Graciela, Beatriz , CASPAR, Jonathan, V. , CATRON, John, W. , CHESTERFIELD, Reid, John , FELDER, Thomas, C. , GAO, Feng , JOHNSON, Lynda, Kaye , KEUSSEYAN, Roupen, Leon , KEYS, Dalen, E. , MALAJOVICH, Irina , METH, Jeffrey, Scott , NUNES, Geoffrey , O'NEIL, Gerard , SCHIFFINO, Rinaldo, S. , TASSI, Nancy, G.
发明人： BAILEY, Richard, Kevin , BLANCHET, Graciela, Beatriz , CASPAR, Jonathan, V. , CATRON, John, W. , CHESTERFIELD, Reid, John , FELDER, Thomas, C. , GAO, Feng , JOHNSON, Lynda, Kaye , KEUSSEYAN, Roupen, Leon , KEYS, Dalen, E. , MALAJOVICH, Irina , METH, Jeffrey, Scott , NUNES, Geoffrey , O'NEIL, Gerard , SCHIFFINO, Rinaldo, S. , TASSI, Nancy, G.
IPC分类号： H05K1/02 , H05K1/09 , H05K3/12 , H05K3/04 , C08K3/08 , H05K3/10 , G06F3/041 , G06F3/044 , B41M5/382
CPC分类号： B41M5/38207 , B41M3/006 , B41M5/385 , B41M5/395 , B41M5/41 , B41M5/44 , B41M5/465 , B41M2205/02 , B41M2205/38 , H01B1/22 , H01L51/0013 , H01L51/0035 , H01L51/0036 , H05K1/095 , H05K3/046 , H05K2201/0329 , H05K2203/0528 , H05K2203/107 , Y10T428/24893 , Y10T428/24909 , Y10T428/24917
摘要： The invention provides metal compositions, including silver compositions, and thermal imaging donors prepared with the compositions. The donors are useful for thermal transfer patterning of a metal layers and optionally, a corresponding proximate portion of an additional transfer layer onto a thermal imaging receiver. The compositions are useful for dry fabrication of electronic devices. Also provided are patterned multilayer compositions comprising one or more base film(s), and one or more patterned metal layers, including EMI shields and touchpad sensors.
摘要翻译：本发明提供了金属组合物，包括银组合物和用该组合物制备的热成像供体。供体可用于金属层的热转移图案化，以及任选的附加转印层的相应的近似部分到热成像接收器上。该组合物可用于电子设备的干法制造。还提供了包含一个或多个基膜和一个或多个图案化金属层（包括EMI屏蔽和触摸板传感器）的图案化多层组合物。

5. 发明申请

WO2011026078A3 APPARATUS FOR GASEOUS VAPOR DEPOSITION 审中-公开
公开(公告)号：WO2011026078A3
公开(公告)日：2011-03-03
申请号：PCT/US2010/047245
申请日：2010-08-31
申请人： E. I. du Pont de Nemours and Company , CARCIA, Peter Francis , KINARD, Richard, Dale , MCLEAN, Robert Scott , NUNES, Geoffrey , SHILKITUS, Kirstin H
发明人： CARCIA, Peter Francis , KINARD, Richard, Dale , MCLEAN, Robert Scott , NUNES, Geoffrey , SHILKITUS, Kirstin H
IPC分类号： C23C16/458 , C23C16/54 , B29C35/00 , B29C59/00 , B65D83/00 , B65H45/00 , C23C16/455
摘要： A vapor deposition apparatus includes an insert within which a material is deposited on the surface of a film. A cassette includes end plates each having a rib that edgewise receive a spiral wrapping of a film at least 300 mm wide. Spaces between turns of the wrapping define a gas flow channel and spaces between adjacent turns of one rib define inlet openings that communicate with the channel. Each rib has a predetermined width dimension, a predetermined average thickness dimension, and a width-to-thickness aspect ratio of at least 2:1. The spacing between end plates is at least 300 mm and is also greater than the film width at deposition temperature. The width dimension of each rib is between about 0.5% to about 2.0% of the end plate spacing. A diverging flow director contacts one end plate to directing gaseous fluid toward the inlet openings in that end plate.

6. 发明申请

WO2011014762A1 APPARATUS FOR ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：用于原子层沉积的装置
公开(公告)号：WO2011014762A1
公开(公告)日：2011-02-03
申请号：PCT/US2010/043888
申请日：2010-07-30
申请人： E. I. du Pont de Nemours and Company , NUNES, Geoffrey , KINARD, Richard, Dale
发明人： NUNES, Geoffrey , KINARD, Richard, Dale
IPC分类号： C23C16/54 , C23C16/455
CPC分类号： C23C16/45551 , C23C16/45582 , C23C16/545
摘要： An apparatus for atomic layer deposition of a material on a moving substrate comprises a conveying arrangement for moving a substrate along a predetermined planar or curved path of travel and a coating bar having at least one precursor delivery channel. The precursor delivery channel conducts a fluid containing a material to be deposited on a substrate toward the path of travel. When in use, a substrate movable along the path of travel defines a gap between the outlet end of the precursor delivery channel and the substrate. The gap defines an impedance Z g to a flow of fluid from the precursor delivery channel. A flow restrictor is disposed within the precursor delivery channel that presents a predetermined impedance Z fc to the flow there through. The restrictor is sized such that the impedance Z fc is at least five (5) times, and more preferably at least fifteen (15) times, the impedance Z g . The impedance Z fc has a friction factor f . The restrictor in the precursor delivery channel is sized such that the impedance Z f has a friction factor f that is less than 100, and preferably less than 10.
摘要翻译：用于在移动的衬底上原子层沉积材料的装置包括用于沿着预定的平面或弯曲行进路径移动衬底的输送装置和具有至少一个前体输送通道的涂布条。前体输送通道将包含要沉积在基底上的材料的流体传导到行进路径。当使用时，沿着行进路径移动的基板限定了前体输送通道的出口端和基底之间的间隙。间隙限定了来自前体输送通道的流体流动的阻抗Zg。流量限制器设置在前体输送通道内，其向通过的流动提供预定阻抗Zfc。限流器的尺寸使得阻抗Zfc为阻抗Zg至少五（5）倍，更优选为至少十五（15）倍。阻抗Zfc具有摩擦系数f。前体输送通道中的限制器的尺寸使得阻抗Zf的摩擦系数f小于100，优选小于10。

7. 发明申请

WO2005031890A1 PROCESS FOR LAMINATING A DIELECTRIC LAYER ONTO A SEMICONDUCTOR 审中-公开
标题翻译：将介电层层叠在半导体上的工艺
公开(公告)号：WO2005031890A1
公开(公告)日：2005-04-07
申请号：PCT/US2004/031971
申请日：2004-09-24
申请人： E.I. DUPONT DE NEMOURS AND COMPANY , METH, Jeffrey , NUNES, Geoffrey , SHARP, Kenneth , WHELAND, Robert
发明人： METH, Jeffrey , NUNES, Geoffrey , SHARP, Kenneth , WHELAND, Robert
IPC分类号： H01L51/20
CPC分类号： H01L21/441 , H01L21/47 , H01L21/76801 , H01L29/4908 , H01L29/66742 , H01L29/66969 , H01L29/78648 , H01L29/78681 , H01L51/0516
摘要： This invention relates to processes useful for fabricating electronic devices, more particularly to a process for laminating a layer of dielectric material onto a semiconductor.
摘要翻译：本发明涉及用于制造电子器件的方法，更具体地说，涉及将电介质材料层层压到半导体上的方法。

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