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1. 发明申请

WO2012094634A3 FUNCTIONALIZED CARBON MEMBRANES 审中-公开
标题翻译：功能性碳膜
公开(公告)号：WO2012094634A3
公开(公告)日：2012-11-01
申请号：PCT/US2012020545
申请日：2012-01-06
申请人： DUNE SCIENCES INC , MILLER JOHN M , TESHIMA JANET , HUTCHISON JAMES E
发明人： MILLER JOHN M , TESHIMA JANET , HUTCHISON JAMES E
IPC分类号： G01N1/28 , B82B1/00 , H01J37/26
CPC分类号： B05D1/185 , B05D3/044 , G01N1/2813 , H01J37/20 , H01J37/26
摘要： Embodiments provide electron-conducting, electron-transparent substrates that are chemically derivatized (e.g., functional ized) to enhance and facilitate the deposition of nanoscale materials thereupon, including both hard and soft nanoscale materials. In various embodiments, the substrates may include an electron- conducting mesh support, for example, a carbon, copper, nickel, molybdenum, beryllium, gold, silicon, GaAs, or oxide (e.g., SiO2, TiO2, ITO, or AI2O3) support, or a combination thereof, having one or more apertures. In various embodiments, the mesh support may be coated with an electron conducting, electron transparent carbon film membrane that has been chemically derivatized to promote adhesion and/or affinity for various materials, including hard inorganic materials and soft materials, such as polymers and biological molecules.
摘要翻译：实施例提供了化学衍生化（例如功能化）的电子传导的电子透明基底，以增强和促进纳米尺度材料的沉积，包括硬和软纳米尺度材料。在各种实施例中，基底可以包括电子传导网支撑体，例如碳，铜，镍，钼，铍，金，硅，GaAs或氧化物（例如，SiO 2，TiO 2，ITO或Al 2 O 3）载体，或其组合，具有一个或多个孔。在各种实施例中，网状支撑体可以涂覆有电子传导的电子透明碳膜膜，其被化学衍生化以促进对各种材料的粘合和/或亲和力，包括硬无机材料和软材料，例如聚合物和生物分子。

2. 发明申请

WO2004044596A2 DEFECT ANALYZER 审中-公开
标题翻译：缺陷分析仪
公开(公告)号：WO2004044596A2
公开(公告)日：2004-05-27
申请号：PCT/US0336017
申请日：2003-11-12
申请人： FEI CO , TESHIMA JANET , PARTIN DANIEL E , HUDSON JAMES E
发明人： TESHIMA JANET , PARTIN DANIEL E , HUDSON JAMES E
IPC分类号： H01L21/00 , G01R
CPC分类号： H01J37/28 , H01J37/302 , H01J37/304 , H01J37/3056 , H01J2237/24592 , H01J2237/2485 , H01J2237/2817 , H01J2237/31745 , H01L21/67253 , H01L21/67276
摘要： The present invention provides methods, devices, and systems for analyzing defects in an object such as a semiconductor wafer. In one embodiment, it provides a method of characterizing defects in semiconductor wafers during fabrication in a semiconductor fabrication facility. This method comprises the following actions. The semiconductor wafers are inspected to locate defects. Locations corresponding to the located defects are then stored in a defect file. A dual charged-particle beam system is automatically navigated to the vicinity defect location using information from the defect file. The defect is automatically identified and a charged particle beam image of the defect is then obtained. The charged particle beam image is then analyzed to characterize the defect. A recipe is then determined for further analysis of the defect. The recipe is then automatically executed to cut a portion of the defect using a charged particle beam. The position of the cut is based upon the analysis of the charged particle beam image. Ultimately, a surface exposed by the charged particle beam cut is imaged to obtain additional information about the defect.
摘要翻译：本发明提供了用于分析诸如半导体晶片等物体中的缺陷的方法，设备和系统。在一个实施例中，它提供了在半导体制造设施中制造期间表征半导体晶片中的缺陷的方法。此方法包含以下操作。检查半导体晶片以定位缺陷。然后将对应于定位缺陷的位置存储在缺陷文件中。双电荷粒子束系统使用来自缺陷文件的信息自动导航到附近的缺陷位置。自动识别缺陷并获得缺陷的带电粒子束图像。然后分析带电粒子束图像以表征缺陷。然后确定配方以进一步分析缺陷。然后使用带电粒子束自动执行配方以切割缺陷的一部分。切割的位置基于对带电粒子束图像的分析。最终，通过带电粒子束切割暴露的表面被成像以获得关于缺陷的附加信息。

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