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1. 发明申请

WO2004044596A2 DEFECT ANALYZER 审中-公开
标题翻译：缺陷分析仪
公开(公告)号：WO2004044596A2
公开(公告)日：2004-05-27
申请号：PCT/US0336017
申请日：2003-11-12
申请人： FEI CO , TESHIMA JANET , PARTIN DANIEL E , HUDSON JAMES E
发明人： TESHIMA JANET , PARTIN DANIEL E , HUDSON JAMES E
IPC分类号： H01L21/00 , G01R
CPC分类号： H01J37/28 , H01J37/302 , H01J37/304 , H01J37/3056 , H01J2237/24592 , H01J2237/2485 , H01J2237/2817 , H01J2237/31745 , H01L21/67253 , H01L21/67276
摘要： The present invention provides methods, devices, and systems for analyzing defects in an object such as a semiconductor wafer. In one embodiment, it provides a method of characterizing defects in semiconductor wafers during fabrication in a semiconductor fabrication facility. This method comprises the following actions. The semiconductor wafers are inspected to locate defects. Locations corresponding to the located defects are then stored in a defect file. A dual charged-particle beam system is automatically navigated to the vicinity defect location using information from the defect file. The defect is automatically identified and a charged particle beam image of the defect is then obtained. The charged particle beam image is then analyzed to characterize the defect. A recipe is then determined for further analysis of the defect. The recipe is then automatically executed to cut a portion of the defect using a charged particle beam. The position of the cut is based upon the analysis of the charged particle beam image. Ultimately, a surface exposed by the charged particle beam cut is imaged to obtain additional information about the defect.
摘要翻译：本发明提供了用于分析诸如半导体晶片等物体中的缺陷的方法，设备和系统。在一个实施例中，它提供了在半导体制造设施中制造期间表征半导体晶片中的缺陷的方法。此方法包含以下操作。检查半导体晶片以定位缺陷。然后将对应于定位缺陷的位置存储在缺陷文件中。双电荷粒子束系统使用来自缺陷文件的信息自动导航到附近的缺陷位置。自动识别缺陷并获得缺陷的带电粒子束图像。然后分析带电粒子束图像以表征缺陷。然后确定配方以进一步分析缺陷。然后使用带电粒子束自动执行配方以切割缺陷的一部分。切割的位置基于对带电粒子束图像的分析。最终，通过带电粒子束切割暴露的表面被成像以获得关于缺陷的附加信息。

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