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1. 发明申请

WO2015131981A1 PLASMA TREATMENT OF SUBSTRATES 审中-公开
标题翻译：基板等离子体处理
公开(公告)号：WO2015131981A1
公开(公告)日：2015-09-11
申请号：PCT/EP2015/000394
申请日：2015-02-21
申请人： DOW CORNING FRANCE , CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS)
发明人： DESCAMPS, Pierre , MASSINES, Françoise , GAUDY, Thomas , CAMPEOL, Frederick , KAISER, Vincent
IPC分类号： H05H1/24 , H05H1/42 , H05H1/48
CPC分类号： H05H1/42 , H05H1/48 , H05H2001/245 , H05H2240/10 , H05H2240/20 , H05H2245/123
摘要： Apparatus for depositing an oxide film on a substrate comprises a first chamber (13) defined by a dielectric housing (14) and having an inlet for process gas and an outlet (15), at least one first electrode (10,12) positioned between an inlet for process gas and the first chamber, means for introducing an oxide precursor into process gas flowing from the said inlet through the said first chamber (13) to the outlet (15), and means for applying a high voltage to the first electrode to generate a non-thermal equilibrium atmospheric pressure plasma in the first chamber (13); a second chamber (23) defined by a dielectric housing and having an inlet for process gas comprising oxygen and an outlet (25), at least one second electrode (21,22) positioned between the inlet for process gas comprising oxygen and the second chamber (23), the first chamber (13) and the second chamber (23) being interconnected at their outlets, and means for applying a high voltage to the second electrode to generate a non-thermal equilibrium atmospheric pressure plasma in the second chamber; and support means (37) for the substrate (35) positioned adjacent to the interconnected outlets of the first chamber and second chamber.
摘要翻译：用于在衬底上沉积氧化膜的设备包括由绝缘壳体（14）限定并具有用于工艺气体的入口和出口（15）的第一腔室（13），位于第二腔室之间的至少一个第一电极用于处理气体的入口和第一室，用于将氧化物前体引入从所述入口通过所述第一室（13）流到出口（15）的工艺气体的装置，以及用于向第一电极施加高电压的装置以在所述第一室（13）中产生非热平衡大气压等离子体; 由绝缘壳体限定并具有包括氧气和出口（25）的工艺气体入口的第二腔室（23），至少一个第二电极（21,22），其位于用于包含氧的工艺气体的入口和第二腔室（23），第一室（13）和第二室（23）在其出口处相互连接，以及用于向第二电极施加高电压以在第二室中产生非热平衡大气压等离子体的装置; 以及用于所述基底（35）的支撑装置（37），所述支撑装置邻近所述第一腔室和所述第二腔室的互连出口定位。

2. 发明申请

WO2013068085A1 PLASMA TREATMENT OF SUBSTRATES 审中-公开
标题翻译：基板等离子体处理
公开(公告)号：WO2013068085A1
公开(公告)日：2013-05-16
申请号：PCT/EP2012/004579
申请日：2012-11-02
申请人： DOW CORNING FRANCE , CENTRE NATIONAL DE LA RECHERCHE SICIENTIFIQUE
发明人： GAUDY, Thomas , DESCAMPS, Pierre , LEEMPOEL, Patrick , KAISER, Vincent , ASAD, Syed Salman
IPC分类号： H05H1/00 , H05H1/42 , H05H1/48
CPC分类号： C23C16/50 , H05H1/2406 , H05H1/42 , H05H1/48 , H05H2001/2418 , H05H2245/123
摘要： An apparatus for plasma treating a substrate comprises a high voltage source of frequency 3kHz to 30kHz connected to at least one needle electrode (11) positioned within a channel (16) inside a dielectric housing (14) having an inlet for process gas and an outlet. The channel (16) has an entry (16a) which forms the said inlet for process gas and an exit (16e) into the dielectric housing arranged so that process gas flows from the inlet through the channel (16) past the electrode (11) to the outlet of the dielectric housing. The apparatus includes means for introducing an atomised surface treatment agent in the dielectric housing, and support means (27, 28) for the substrate (25) adjacent to the outlet of the dielectric housing. The needle electrode (11) extends from the channel entry (16a) to a tip (11t) close to the exit (16e) of the channel and projects outwardly from the channel (16) so that the tip (11t) of the needle electrode is positioned in the dielectric housing close to the exit (16e) of the channel at a distance outside the channel of at least 0.5mm up to 5 times the hydraulic diameter of the channel. The channel (16) has a ratio of length to hydraulic diameter greater than 10:1.
摘要翻译：用于等离子体处理衬底的装置包括频率为3kHz至30kHz的高电压源，其连接到位于电介质壳体（14）内部的通道（16）内的至少一个针电极（11），所述电极具有用于处理气体的入口和出口。通道（16）具有形成用于处理气体的所述入口的入口（16a）和布置成使得处理气体从入口通过通道（16）流过电极（11）的入口（16e）到介电壳体的出口。该装置包括用于将介电壳体中的雾化表面处理剂引入的装置和用于与介质壳体的出口相邻的衬底（25）的支撑装置（27,28）。针状电极（11）从通道入口（16a）延伸到靠近通道出口（16e）的尖端（11t），并从通道（16）向外突出，使针电极（11t）的尖端位于介质壳体中，靠近通道的出口（16e），通道外通道的距离至少为0.5mm至通道的液压直径的5倍。通道（16）的长度与水力直径之比大于10：1。

3. 发明申请

WO2012146348A1 PLASMA TREATMENT OF SUBSTRATES 审中-公开
标题翻译：基板等离子体处理
公开(公告)号：WO2012146348A1
公开(公告)日：2012-11-01
申请号：PCT/EP2012/001628
申请日：2012-04-16
申请人： DOW CORNING FRANCE , CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (C.N.R.S.) , MASSINES, Françoise , GAUDY, Thomas , DESCAMPS, Pierre , LEEMPOEL, Patrick , KAISER, Vincent
发明人： MASSINES, Françoise , GAUDY, Thomas , DESCAMPS, Pierre , LEEMPOEL, Patrick , KAISER, Vincent
IPC分类号： H05H1/42 , H05H1/24 , H05H1/48
CPC分类号： H05H1/2406 , H05H1/42 , H05H1/46 , H05H1/48 , H05H2001/2418 , H05H2001/4697 , H05H2245/123
摘要： A process for plasma treating a substrate comprises applying a radio frequency high voltage to at least one electrode positioned within a dielectric housing having an inlet and an outlet while causing a process gas, usually comprising helium, to flow from the inlet past the electrode to the outlet, thereby generating a non-equilibrium atmospheric pressure plasma. An atomised or gaseous surface treatment agent is incorporated in the non-equilibrium atmospheric pressure plasma. The substrate is positioned adjacent to the plasma outlet so that the surface is in contact with the plasma and is moved relative to the plasma outlet. The velocity of the process gas flowing past the electrode is less than 100 m/s. Process gas is also injected into the dielectric housing at a velocity greater than 100m/s. The volume ratio of process gas injected at a velocity greater than 100m/s to process gas flowing past the electrode at less than 100 m/s is from 1 :20 to 5:1.
摘要翻译：用于等离子体处理衬底的方法包括将射频高压施加到位于具有入口和出口的电介质外壳内的至少一个电极，同时使通常包括氦的工艺气体从入口流过电极流到电极从而产生非平衡大气压等离子体。将雾化或气态表面处理剂并入非平衡大气压等离子体中。衬底位于等离子体出口附近，使得表面与等离子体接触并且相对于等离子体出口移动。流过电极的工艺气体的速度小于100m / s。工艺气体也以大于100m / s的速度注入绝缘壳体。以大于100m / s的速度喷射的工艺气体的体积比以小于100m / s的速度流过电极的气体的体积比为1:20至5:1。

4. 发明申请

WO2012010299A1 PLASMA TREATMENT OF SUBSTRATES 审中-公开
标题翻译：基板等离子体处理
公开(公告)号：WO2012010299A1
公开(公告)日：2012-01-26
申请号：PCT/EP2011/003624
申请日：2011-07-20
申请人： DOW CORNING FRANCE , CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE , MASSINES, Françoise , GAUDY, Thomas , TOUTANT, Adrien , DESCAMPS, Pierre , LEEMPOEL, Patrick , KAISER, Vincent
发明人： MASSINES, Françoise , GAUDY, Thomas , TOUTANT, Adrien , DESCAMPS, Pierre , LEEMPOEL, Patrick , KAISER, Vincent
IPC分类号： H05H1/24
CPC分类号： B05D1/62 , C23C16/509 , H05H1/2406 , H05H1/42 , H05H2001/2412 , H05H2240/10 , H05H2240/20
摘要： A process for plasma treating a substrate comprises applying a radio frequency high voltage to at least one electrode positioned within a dielectric housing having an inlet and an outlet while causing a process gas to flow from the inlet past the electrode to the outlet, thereby generating a non-equilibrium atmospheric pressure plasma. An atomised or gaseous surface treatment agent is incorporated in the non-equilibrium atmospheric pressure plasma. The substrate is positioned adjacent to the plasma outlet so that the surface is in contact with the plasma and is moved relative to the plasma outlet. The flow of process gas and the gap between the plasma outlet and the substrate are controlled so that the process gas has a turbulent flow regime within the dielectric housing.
摘要翻译：用于等离子体处理衬底的方法包括将射频高压施加到位于具有入口和出口的电介质外壳内的至少一个电极，同时使处理气体从入口流过电极流到出口，从而产生非平衡大气压等离子体。将雾化或气态表面处理剂并入非平衡大气压等离子体中。衬底位于等离子体出口附近，使得表面与等离子体接触并且相对于等离子体出口移动。控制处理气体的流动和等离子体出口与衬底之间的间隙，使得处理气体在介电壳体内具有湍流状态。

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