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1. 发明申请

WO2015195295A1 PHOTOPATTERNABLE SILICONES FOR WAFER LEVEL Z-AXIS THERMAL INTERPOSER 审中-公开
标题翻译：用于水平光轴的热可控硅Z轴轴承热交换器
公开(公告)号：WO2015195295A1
公开(公告)日：2015-12-23
申请号：PCT/US2015/033163
申请日：2015-05-29
申请人： DOW CORNING CORPORATION
发明人： JOHN, Ranjith, Samuel , MEYNEN, Herman , YEAKLE, Craig
IPC分类号： H01L23/34 , H01L23/12
CPC分类号： H01L23/3737 , C08G77/12 , C08G77/20 , C09D183/04 , C09K5/14 , G03F7/038 , G03F7/0755 , G03F7/0757 , G03F7/16 , G03F7/168 , G03F7/2002 , G03F7/32 , G03F7/325 , G03F7/38 , G03F7/40 , H01L21/4882 , H01L21/78 , H01L23/3675 , H01L23/3677 , H01L23/3736 , H01L23/42 , H01L2924/0002 , H01L2924/00 , C08L83/00 , C08K5/56
摘要： Methods for fabrication of thermal interposers, using a low stress photopatternable silicone are provided, for use in production of electronic products that feed into packaging of LEDs, logic and memory devices and other such semiconductor products where thermal management is desired. A photopatternable silicone composition, thermally conductive material and a low melting point compliant solder form a complete semiconductor package module. The photopatternable silicone is applied on a surface of a wafer and selectively radiated to form openings which provided user defined bondline thickness control. The openings are then filled with high conductivity pastes to form high conductivity thermal links. A low melting point curable solder is then applied where the solder wets the silicone as well as the thermally conductive path that leads to low thermal contact resistance between the structured z-axis thermal interposer and the heat sink and/or substrate which can be a wafer or PCB.
摘要翻译：提供了使用低应力光图案化硅树脂制造热插入件的方法，用于生产供应LED封装，逻辑和存储器件以及其它需要热管理的其它半导体产品的电子产品。可光致图案的硅氧烷组合物，导热材料和低熔点柔性焊料形成完整的半导体封装模块。将可光致编码的硅胶施加在晶片的表面上并选择性地辐射以形成提供用户限定的粘结层厚度控制的开口。然后用高电导率浆料填充开口以形成高导电性热连接。然后施加低熔点可固化焊料，其中焊料润湿硅树脂以及导致结构化的z轴热插入件与可以是晶片的散热器和/或衬底之间的低热接触电阻的导热路径或PCB。

2. 发明申请

WO2010068336A1 SILSESQUIOXANE RESINS 审中-公开
标题翻译： SILSESQUIOXANE树脂
公开(公告)号：WO2010068336A1
公开(公告)日：2010-06-17
申请号：PCT/US2009/061125
申请日：2009-10-19
申请人： DOW CORNING CORPORATION , FU, Peng-Fei , MOYER, Eric , YEAKLE, Craig
发明人： FU, Peng-Fei , MOYER, Eric , YEAKLE, Craig
IPC分类号： C08G77/04 , C09D183/04
CPC分类号： C08G77/14 , C08G77/04 , C08G77/12 , C09D183/06 , G03F7/0752 , G03F7/091
摘要： This invention pertains to silsesquioxane resins useful in antireflective coatings wherein the silsesquioxane resin is comprised of the units (Ph(CH 2 ) r SiO (3-x)/2 (OR')x)m (HSiO (3-x)/2 (OR') x ) n (MeSiO (3-x)/2 (OR') x)o (RSiO (3-x)/2 (OR') x ) p (R 1 SiO (3-x)/2 (OR' ) x ) q where Ph is a phenyl group, Me is a methyl group; R 1 is hydrogen atom or a hydrocarbon group having from 1 to 4 carbon atoms; R is selected from a carboxylic acid group or a carboxylic acid forming group or mixtures thereof; and R is selected from substituted phenyl groups, ester groups, polyether groups; mercapto groups, sulfur-containing organic functional groups, hydroxyl producing group, aryl sulphonic ester groups, and reactive or curable organic functional groups; and r has a value of 0, 1, 2, 3, or 4; x has a value of 0, 1 or 2; wherein in the resin m has a value of 0 to 0.90; n has a value of 0.05 to 0.99; o has a value of 0 to 0.95; p has a value of 0.01 to 0.5; q has a value of 0 to 0.5; and m + n + o + p + q ≈ 1.
摘要翻译：本发明涉及可用于抗反射涂料的倍半硅氧烷树脂，其中倍半硅氧烷树脂由单元（Ph（CH 2）r SiO（3-x）/ 2（OR'）x）m（HSiO（3-x）/ 2 '（x'）x（x）n（MeSiO（3-x）/ 2（OR'）x）o（RSiO（3-x）/ 2 其中Ph是苯基，Me是甲基; R 1是氢原子或具有1至4个碳原子的烃基; R选自羧酸基团或羧酸形成基团或其混合物; 并且R选自取代的苯基，酯基，聚醚基团; 巯基，含硫有机官能团，羟基产生基团，芳基磺酸酯基团和反应性或可固化的有机官能团; 并且r的值为0,1,2,3或4; x的值为0,1或2; 其中在树脂中m为0至0.90; n的值为0.05〜0.99; o的值为0〜0.95; p的值为0.01〜0.5; q的值为0〜0.5; 和m + n + o + p + q〜1。

3. 发明申请

WO2011068766A1 STABILIZATION OF SILSESQUIOXANE RESINS 审中-公开
标题翻译：硅氧烷树脂的稳定性
公开(公告)号：WO2011068766A1
公开(公告)日：2011-06-09
申请号：PCT/US2010/058251
申请日：2010-12-02
申请人： DOW CORNING CORPORATION , MACMILLAN, Andrew , MOYER, Eric, Scott , REITER, Michael, Robert , TAKEUCHI, Kasumi , WANG, Sheng , YEAKLE, Craig
发明人： MACMILLAN, Andrew , MOYER, Eric, Scott , REITER, Michael, Robert , TAKEUCHI, Kasumi , WANG, Sheng , YEAKLE, Craig
IPC分类号： C08L83/06 , C08L83/04 , C08K5/1535 , C08K5/1539 , C08K5/13 , C08K5/00 , C08G77/20 , C08G77/14
CPC分类号： C08L83/06 , C08G77/14 , C08G77/20 , C08G77/70 , C08G77/80 , C08K5/15
摘要： Disclosed is silsesquioxane resin composition that contains a free radical curable functional group that is stabilized with a hydrophilic inhibitor. The hydrophilic inhibitor that has the capability to scavenge free radicals such as ascorbic acid or salicylic acid is used to stabilize the resin. The resins are useful in semiconductor formation such as for anti - reflective coatings, hardmasks or photoresist layers.
摘要翻译：公开了含有由亲水性抑制剂稳定的自由基固化性官能团的倍半硅氧烷树脂组合物。使用具有清除自由基如抗坏血酸或水杨酸的能力的亲水性抑制剂来稳定树脂。树脂可用于半导体形成，例如用于抗反射涂层，硬掩模或光致抗蚀剂层。

4. 发明申请

WO2010068337A1 WET-ETCHABLE ANTIREFLECTIVE COATINGS 审中-公开
标题翻译：可湿性抗反射涂层
公开(公告)号：WO2010068337A1
公开(公告)日：2010-06-17
申请号：PCT/US2009/061130
申请日：2009-10-19
申请人： DOW CORNING CORPORATION , FU, Peng-Fei , MOYER, Eric , YEAKLE, Craig
发明人： FU, Peng-Fei , MOYER, Eric , YEAKLE, Craig
IPC分类号： C09D183/04 , G03F7/11 , H01L21/30 , C09D183/06
CPC分类号： C09D183/06 , C08G77/04 , C08G77/14 , G03F7/0752 , G03F7/091
摘要： Antireflective coatings produced from silsesquioxane resin is comprised of the units (Ph(CH 2 ) r SiO (3_x)/2 (OR') x ) m (HSiO (3_x)/2 (OR') x ) n (MeSiO (3.x)/2 (OR') x ) o (RSiO (3-x)/2 (OR') x ) p (R 1 SiO (3-x)/2 (OR') x ) q where Ph is a phenyl group, Me is a methyl group; R' is hydrogen atom or a hydrocarbon group having from 1 to 4 carbon atoms; R is selected from a carboxylic acid group or a carboxylic acid forming group with the proviso that there is a sufficient amount of carboxylic acid groups to make the resin wet etchable after cure; and R is selected from substituted phenyl groups, ester groups, polyether groups; mercapto groups, sulfur-containing organic functional groups, hydroxyl producing group, aryl sulphonic ester groups, and reactive or curable organic functional groups; and r has a value of 0, 1, 2, 3, or 4; x has a value of 0, 1 or 2; wherein in the resin m has a value of 0 to 0.90; n has a value of 0.05 to 0.99; o has a value of 0 to 0.95; p has a value of 0.01 to 0.5; q has a value of 0 to 0.5; and m + n + o + p + q ≈ 1.
摘要翻译：由倍半硅氧烷树脂制成的抗反射涂层由单元（Ph（CH2）rSiO（3_x）/ 2（OR'）x）m（HSiO（3_x）/ 2（OR'）x）n（MeSiO（3.x） / 2（OR'）x）o（RSiO（3-x）/ 2（OR'）x）p（R1SiO（3-x）/ 2（OR'）x）q其中Ph是苯基，Me是甲基; R'是氢原子或具有1至4个碳原子的烃基; R选自羧酸基团或羧酸形成基团，条件是存在足够量的羧酸基团以使树脂在固化后可湿法蚀刻; 并且R选自取代的苯基，酯基，聚醚基团; 巯基，含硫有机官能团，羟基产生基团，芳基磺酸酯基团和反应性或可固化的有机官能团; 并且r的值为0,1,2,3或4; x的值为0,1或2; 其中在树脂中m为0至0.90; n的值为0.05〜0.99; o的值为0〜0.95; p的值为0.01〜0.5; q的值为0到0.5; 和m + n + o + p + q〜1。

5. 发明申请

WO2011011142A2 METHOD AND MATERIALS FOR REVERSE PATTERNING 审中-公开
标题翻译：反向构图的方法和材料
公开(公告)号：WO2011011142A2
公开(公告)日：2011-01-27
申请号：PCT/US2010/039415
申请日：2010-06-22
申请人： DOW CORNING CORPORATION , BRADFORD, Michael, L. , MOYER, Eric, Scott , TAKEUCHI, Kasumi , WANG, Sheng , YEAKLE, Craig
发明人： BRADFORD, Michael, L. , MOYER, Eric, Scott , TAKEUCHI, Kasumi , WANG, Sheng , YEAKLE, Craig
IPC分类号： C08G77/18 , C08L83/04 , C09D183/04 , G03F7/20 , G03F7/075
CPC分类号： C08G77/18 , C08L83/04 , C09D183/04 , H01L21/02137 , H01L21/02282 , H01L21/0337
摘要： A silsesquioxane resin is applied on top of the patterned photo-resist and cured to produce a cured silsesquioxane resin on top of the pattern surface. Subsequently, an aqueous base stripper or a reactive ion etch recipe containing CF 4 is used to "etch back" the silicon resin to the top of the photoresist material, exposing the entire top surface of the photoresist. Then, a second reactive ion etch recipe containing O 2 to etch away the photoresist. The result is a silicon resin film with via holes with the size and shape of the post that were patterned into the photoresist. Optionally, the new pattern can be transferred into the underlying layer(s).
摘要翻译：将倍半硅氧烷树脂施加在图案化的光致抗蚀剂上并固化以在图案表面的顶部上产生固化的倍半硅氧烷树脂。随后，使用包含CF 4的水性碱性汽提器或反应性离子蚀刻配方来“回蚀” 硅树脂到光致抗蚀剂材料的顶部，暴露光致抗蚀剂的整个顶表面。然后，包含O 2的第二反应离子蚀刻配方蚀刻掉光致抗蚀剂。其结果是具有过孔的硅树脂膜，其具有图案化到光刻胶中的柱的尺寸和形状。可选地，新模式可以被转移到底层（s）。

6. 发明申请

WO2003035720A1 ETCH-STOP RESINS 审中-公开
标题翻译：止蚀树脂
公开(公告)号：WO2003035720A1
公开(公告)日：2003-05-01
申请号：PCT/US2002/031824
申请日：2002-10-04
申请人： DOW CORNING CORPORATION , BOISVERT, Ronald , GRIGORAS, Stelian , HA, David , HARKNESS, Brian , YEAKLE, Craig
发明人： BOISVERT, Ronald , GRIGORAS, Stelian , HA, David , HARKNESS, Brian , YEAKLE, Craig
IPC分类号： C08G77/12
CPC分类号： C08L83/04 , C08G77/06 , C08G77/12 , C08G77/16 , C08G77/70 , C09D183/04 , H01L21/02126 , H01L21/02282 , H01L21/3122 , H01L21/76801 , Y10T428/24917
摘要： Silicone resins comprising 5 to 50 mole% of (PhSiO 3-x)/2 (OH) x ) units and 50 to 95 mole% (HSiO (3-x)/2 (OH) x ), where Ph is a phenyl group, x has a value of 0, 1 or 2 and wherein the cured silicone resin has a critical surface free energy of 30 dynes/cm or higher. These resins are useful as etch stop layers for organic dielectric materials having a critical surface free energy of 40 dynes/cm or higher.
摘要翻译：包含5〜50摩尔％的（PhSiO 3-x）/ 2（OH）x）单元和50〜95摩尔％（HSiO（3-x）/ 2（OH）x）的硅氧烷树脂，其中Ph为苯基， x的值为0,1或2，其中固化的有机硅树脂具有30达因/厘米或更高的临界表面自由能。这些树脂可用作具有40达因/厘米或更高的临界表面自由能的有机介电材料的蚀刻停止层。

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