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1. 发明申请

WO0170628A3 PLASMA PROCESSING FOR POROUS SILICA THIN FILM 审中-公开
标题翻译：多孔二氧化硅薄膜的等离子体处理
公开(公告)号：WO0170628A3
公开(公告)日：2002-04-18
申请号：PCT/US0108997
申请日：2001-03-20
申请人： DOW CORNING , AXCELIS TECH INC
发明人： BERRY IVAN LOUIS III , CHUNG KYUHA , HAN QINGYUAN , LIU YOUFAN , MOYER ERIC SCOTT , SPAULDING MICHAEL JOHN , WALDFRIED CARLO , BRIDGEWATER TODD , CHEN WEI
IPC分类号： C01B33/12 , H01L21/312 , H01L21/314 , H01L21/316 , C04B41/50
CPC分类号： H01L21/3122 , C01B33/126 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/0234 , H01L21/31695 , Y10T428/31663
摘要： Low dielectric constant films with improved elastic modulus. The method of making such coatings involves providing a porous network coating produced from a resin containing at least 2 Si-H groups. The coating can be thermally cured and has a dielectric constant in the range of from about 1.1 to about 3.5. Plasma treatment of the thermally cured coating will convert the coating into porous silica. Plasma treatment of the thermally cured porous network coating yields a coating with improved modulus, but with a higher dielectric constant. The coating is plasma treated for between about 15 and about 120 seconds at a temperature less than about 350 DEG C. Porous network coatings can also be plasma cured without prior thermal curing. The coating can be plasma cured at a temperature between about 200 DEG C and about 250 DEG C for less than about 5 minutes. The thermally cured plasma treated coating or plasma cured coating can optionally be annealed. Annealing by rapid thermal processing (RTP) of the thermally cured plasma treated or plasma cured coating reduces the dielectric constant of the coating while maintaining an improved elastic modulus. The annealing temperature is preferably less than about 475 DEG C, and the annealing time is preferably no more than about 180 seconds. The annealed, thermally cured plasma treated or plasma cured coating has a dielectric constant in the range of from about 1.1 to about 3.5 and an improved elastic modulus.
摘要翻译：具有改善的弹性模量的低介电常数膜。制备这种涂层的方法包括提供由含有至少2个Si-H基团的树脂制备的多孔网状涂层。涂层可以热固化，并且介电常数在约1.1至约3.5的范围内。热固化涂层的等离子体处理将将涂层转化为多孔二氧化硅。热固化多孔网络涂层的等离子体处理产生具有改进模量但具有较高介电常数的涂层。该涂层在小于约350℃的温度下进行等离子体处理约15至约120秒。多孔网络涂层也可以在没有预先热固化的情况下进行等离子体固化。涂层可以在约200℃至约250℃的温度下等离子体固化少于约5分钟。热固化的等离子体处理的涂层或等离子体固化涂层可以任选地退火。经热固化的等离子体处理或等离子体固化涂层的快速热处理（RTP）退火降低了涂层的介电常数，同时保持了改进的弹性模量。退火温度优选小于约475℃，退火时间优选不大于约180秒。经退火的热固化等离子体处理或等离子体固化涂层的介电常数在约1.1至约3.5的范围内并具有改进的弹性模量。

2. 发明申请

WO2011011139A3 METHOD AND MATERIALS FOR REVERSE PATTERNING 审中-公开
标题翻译：反向构图的方法和材料
公开(公告)号：WO2011011139A3
公开(公告)日：2011-04-21
申请号：PCT/US2010039408
申请日：2010-06-22
申请人： DOW CORNING , BRADFORD MICHAEL L , MOYER ERIC SCOTT , WANG SHENG
发明人： BRADFORD MICHAEL L , MOYER ERIC SCOTT , WANG SHENG
IPC分类号： G03F7/20 , H01L21/027
CPC分类号： H01L21/0337 , C08G77/04 , G03F7/405 , H01L21/02126 , H01L21/02216 , H01L21/3122
摘要： A silsesquioxane resin is applied on top of the patterned photo-resist and cured to produce a cured silsesquioxane resin on top of the pattern surface. Subsequently, a reactive ion etch recipe containing CF4 to "etch back" the silicon resin to the top of the photoresist material, exposing the entire top surface of the organic based photoresist. Then, a second reactive ion etch recipe containing O2 to etch away the organic photoresist. The result is a silicon resin film with via holes with the size and shape of the post that were patterned into the photoresist. Optionally, the new pattern can be transferred into the underlying layer(s).
摘要翻译：将倍半硅氧烷树脂施加在图案化的光致抗蚀剂上并固化以在图案表面的顶部上产生固化的倍半硅氧烷树脂。随后，包含CF 4的反应离子蚀刻配方将硅树脂“回蚀”到光致抗蚀剂材料的顶部，暴露有机基光致抗蚀剂的整个顶部表面。然后，包含O 2的第二反应离子蚀刻配方蚀刻掉有机光刻胶。其结果是具有过孔的硅树脂膜，其具有图案化到光刻胶中的柱的尺寸和形状。或者，可以将新模式传送到底层。

3. 发明申请

WO2009111122A2 SILSESQUIOXANE RESINS 审中-公开
标题翻译： SILSESQUIOXANE树脂
公开(公告)号：WO2009111122A2
公开(公告)日：2009-09-11
申请号：PCT/US2009032907
申请日：2009-02-03
申请人： DOW CORNING , BRADFORD MICHAEL L , MOYER ERIC SCOTT , WANG SHENG , YEAKLE CRAIG ROLLIN
发明人： BRADFORD MICHAEL L , MOYER ERIC SCOTT , WANG SHENG , YEAKLE CRAIG ROLLIN
IPC分类号： C08G77/04
CPC分类号： C08G77/28 , C08G77/04 , C08G77/12 , C08G77/70 , C09D183/04 , C09D183/08 , G02B1/04 , G03F7/0752 , G03F7/091 , C08L83/08 , C08L83/04
摘要： A silsesquioxane resin comprised of the units (Ph(CH2)rSiO(3-x)/2(OR')x)m, (HSiO(3-x)/2(OR')x)n' (MeSiO(3-x)/2(OR' )x)o' (RSiO(3-x)/2(OR')x)p, (R1SiO(3-x)/2(OR')x)q where Ph is a phenyl group, Me is a methyl group; R' is hydrogen atom or a hydrocarbon group having from 1 to 4 carbon atoms; R is selected from an aryl sulfonate ester group; and R1 is selected from substituted phenyl groups, ester groups, polyether groups; mercapto groups, and reactive or curable organic functional groups; and r has a value of 0, 1,2, 3, or 4; x has a value of 0, 1 or 2; wherein in the resin m has a value of 0 to 0,95; n has a value of 0.05 to 0.95; o has a value of 0.05 to 0.95; p has a value of 0.05 to 0.5; q has a value of 0 to 0.5; and m + n + o + p + q = I.
摘要翻译：由单元（Ph（CH 2）r SiO（3-x）/ 2（OR'）x）m，（HSiO（3-x）/ 2（OR'）x）n'（MeSiO x）/ 2（OR'）x）o'（RSiO（3-x）/ 2（OR'）x）p，（R1SiO（3-x）/ 2（OR'）x）q其中Ph是苯基组，我是甲基; R'是氢原子或具有1至4个碳原子的烃基; R选自芳基磺酸酯基; 并且R 1选自取代的苯基，酯基，聚醚基团; 巯基和反应性或可固化的有机官能团; 并且r的值为0,1,2,3或4; x的值为0,1或2; 其中在树脂m中具有0至0.95的值; n的值为0.05〜0.95; o的值为0.05〜0.95; p的值为0.05〜0.5; q的值为0〜0.5; 并且m + n + o + p + q = I.

4. 发明申请

WO2012064633A3 NANOSCALE PHOTOLITHOGRAPHY 审中-公开
标题翻译：纳米级光刻
公开(公告)号：WO2012064633A3
公开(公告)日：2012-08-09
申请号：PCT/US2011059532
申请日：2011-11-07
申请人： DOW CORNING , UNIV MICHIGAN , FU PENG-FEI , GUO LINGJIE JAY , MOYER ERIC SCOTT , PINA-HERNANDEZ CARLOS
发明人： FU PENG-FEI , GUO LINGJIE JAY , MOYER ERIC SCOTT , PINA-HERNANDEZ CARLOS
IPC分类号： G03F7/00 , G03F7/16 , G03F7/40
CPC分类号： B05D1/36 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/165 , G03F7/405 , Y10T428/24479 , Y10T428/24612
摘要： A simple and practical method that can reduce the feature size of a patterned structure bearing surface hydroxyl groups is described. The patterned structure can be obtained by any patterning technologies, such as photo-lithography, e-beam lithography, nano-imprinting lithography. The method includes: (1) initially converting the hydroxyl or silanol-rich surface into an amine-rich surface with the treatment of an amine agent, preferably a cyclic compound; (2) coating an epoxy material on the top of the patterned structure; (3) forming an extra layer when applied heat via a surface-initiated polymerization; (4) applying an amine coupling agent to regenerate the amine-rich surface; (5) coating an epoxy material on the top of the patterned structure to form the next layer; (6) repeating step 4 and 5 to form multiple layers; This method allows the fabrication of feature sizes of various patterns and contact holes that are difficult to reach by conventional lithographic methods.
摘要翻译：描述了一种简单且实用的方法，其可以减小承载表面羟基的图案化结构的特征尺寸。图案化结构可以通过任何图案化技术获得，例如光刻，电子束光刻，纳米压印光刻。该方法包括：（1）通过处理胺试剂，优选环状化合物，将羟基或富含硅烷醇的表面初始转化成富胺表面; （2）在图案化结构的顶部涂布环氧树脂材料; （3）当通过表面引发的聚合反应加热时形成额外的层; （4）施加胺偶联剂以再生富胺表面; （5）在图案化结构的顶部涂布环氧材料以形成下一层; （6）重复步骤4和5以形成多个层; 该方法允许制造通过常规光刻方法难以达到的各种图案和接触孔的特征尺寸。

5. 发明申请

WO2009111121A3 SILSESQUIOXANE RESINS 审中-公开
标题翻译： SILSESQUIOXANE树脂
公开(公告)号：WO2009111121A3
公开(公告)日：2009-11-12
申请号：PCT/US2009032906
申请日：2009-02-03
申请人： DOW CORNING , FU PENG-FEI , MOYER ERIC SCOTT
发明人： FU PENG-FEI , MOYER ERIC SCOTT
IPC分类号： C08G77/38 , C08G77/04 , C08G77/08 , C08G77/18 , C08G77/20 , C08L83/04 , C08L83/06 , C09D183/04 , C09D183/06 , H01L21/027
CPC分类号： C09D183/04 , C08G77/04 , C08G77/045 , C08G77/12 , C08G77/14 , C08G77/70 , G02B1/111 , G03F7/0752 , G03F7/091
摘要： This invention pertains to silsesquioxane resins useful in antireflective coatings wherein the silsesquioxane resin is comprised of the units (Ph(CH2)rSiO(3-x)/2(OR')x)m (HSiO(3-x)/2(OR')x)n (MeSiO(3-x)/2(OR')x)o (RSiO(3-x)/2(OR')x)p (R1SiO(3-x)/2(OR')x)q where Ph is a phenyl group, Me is a methyl group; R' is hydrogen atom or a hydrocarbon group having from 1 to 4 carbon atoms; R is selected from a hydroxyl producing group; and R1 is selected from substituted phenyl groups, ester groups, polyether groups; mercapto groups, and reactive or curable organic functional groups; and r has a value of 0, 1, 2, 3, or 4; x has a value of 0, 1 or 2; wherein in the resin m has a value of 0 to 0.95; n has a value of 0.05 to 0.95; o has a value of 0.05 to 0.95; p has a value of 0.05 to 0.5; q has a value of 0 to 0.5; and m + n + o + p + q ~ 1.
摘要翻译：本发明涉及可用于抗反射涂料的倍半硅氧烷树脂，其中倍半硅氧烷树脂由单元（Ph（CH 2）r SiO（3-x）/ 2（OR'）x）m（HSiO（3-x）/ 2 '（x'）x（x）n（MeSiO（3-x）/ 2（OR'）x）o（RSiO（3-x）/ 2 其中Ph是苯基，Me是甲基; R'是氢原子或具有1至4个碳原子的烃基; R选自羟基生成基团; 并且R 1选自取代的苯基，酯基，聚醚基团; 巯基和反应性或可固化的有机官能团; 并且r的值为0,1,2,3或4; x的值为0,1或2; 其中，所述树脂m的值为0〜0.95; n的值为0.05〜0.95; o的值为0.05〜0.95; p的值为0.05〜0.5; q的值为0〜0.5; 和m + n + o + p + q〜1。

6. 发明申请

WO2008002975A3 SILSESQUIOXANE RESIN SYSTEMS WITH BASE ADDITIVES BEARING ELECTRON- ATTRACTING FUNCTIONALITIES 审中-公开
标题翻译：带有电子吸附功能的基础添加剂的SILSESQUIOXANE树脂体系
公开(公告)号：WO2008002975A3
公开(公告)日：2008-04-03
申请号：PCT/US2007072232
申请日：2007-06-27
申请人： DOW CORNING , HU SANLIN , MOYER ERIC SCOTT
发明人： HU SANLIN , MOYER ERIC SCOTT
IPC分类号： B32B27/00 , C08G77/04
CPC分类号： C08L83/04 , C08G77/04 , C08G77/38 , C08K5/16 , Y10S430/106 , Y10S430/108 , Y10S430/115
摘要： Silsesquioxane-based compositions that contain (a) silsesquioxane resins that contain HSiO3/2 units and RSiO 3/2 units wherein; R is an acid dissociable group, and (b) least one organic base additive selected from bulky tertiary amines, imides, amides and the polymeric amines wherein the organic base additive contains an electron-attracting group with the provision that the organic base additive is not 7-diethylamino-4-methylcoumarin. The silsesquioxane-based compositions are useful as positive resist compositions in forming patterned features on substrate, particularly useful for multi-layer layer (i.e. bilayer) 193 nm & 157 nm photolithographic applications.
摘要翻译：基于倍半硅氧烷的组合物，其含有（a）含有HSiO 3/2单元和RS 3 O 3/2/2单元的倍半硅氧烷树脂， R是酸解离基团，和（b）选自大体积叔胺，酰亚胺，酰胺和聚合胺的至少一种有机碱添加剂，其中有机碱添加剂含有吸电子基团，条件是有机碱添加剂不是 7-二乙基氨基-4-甲基香豆素。基于倍半硅氧烷的组合物可用作在衬底上形成图案特征的正性抗蚀剂组合物，特别适用于193nm和157nm多层（即双层）光刻应用。

7. 发明申请

WO2007094848A3 ANTIREFLECTIVE COATING MATERIAL 审中-公开
标题翻译：抗反射涂料
公开(公告)号：WO2007094848A3
公开(公告)日：2007-12-06
申请号：PCT/US2006046810
申请日：2006-12-07
申请人： DOW CORNING , FU PENG-FEI , MOYER ERIC SCOTT
发明人： FU PENG-FEI , MOYER ERIC SCOTT
IPC分类号： G03F7/075 , G03F7/09
CPC分类号： G03F7/091 , G03F7/0752 , Y10T428/31663
摘要： Antireflective coatings comprising (i) a silsesquioxane resin having the formula (PhSiO (3-x) /2 (OH) x) mHSiO (3-x) /2 (OH) x) n (MeSiO (3-x) /2 (OH) x) p where Ph is a phenyl group, Me is a methyl group, x has a value of 0, 1 or 2; m has a value of 0.01 to 0.99, n has a value of 0.01 to 0.99, p has a value of 0.01 to 0.99, and m + n + p = 1; (ii) a polyethylene oxide fluid; and (iii) a solvent; and a method of forming said antireflective coatings on an electronique device.
摘要翻译：抗反射涂层，其包含（i）具有式（PhSiO（3-x）/ 2（OH）x）mHSiO（3-x）/ 2（OH）x）n（MeSiO（3-x）/ 2 OH）x）p其中Ph是苯基，Me是甲基，x具有0,1或2的值; m的值为0.01〜0.99，n为0.01〜0.99，p为0.01〜0.99，m + n + p = 1。（ii）聚环氧乙烷流体; 和（iii）溶剂; 以及在电子器件上形成所述抗反射涂层的方法。

8. 发明申请

WO2007094849A2 ANTIREFLECTIVE COATING MATERIAL 审中-公开
标题翻译：抗反射涂料
公开(公告)号：WO2007094849A2
公开(公告)日：2007-08-23
申请号：PCT/US2006046811
申请日：2006-12-07
申请人： DOW CORNING , FU PENG-FEI , MOYER ERIC SCOTT
发明人： FU PENG-FEI , MOYER ERIC SCOTT
CPC分类号： C09D183/06 , G03F7/0752 , G03F7/091
摘要： Silsesquioxane resins useful in forming the antireflective coating having the formula (PhSiO (3-x)/2 (OH) x ) m HSiO (3-x)/2 (OH) x ) n (MeSiO (3-x)/2 (OH) x ) p (RSiO (3-x) /2(OH) x ) q where Ph is a phenyl group, Me is a methyl group, R is a polyethylene oxide group, x has a value of 0, 1 or 2; m has a value of 0.01 to 0.99, n has a value of 0.01 to 0.99, p has a value of 0.01 to 0.99, q has a value of 0.01 to 0.50 and m + n + p + q ~ l.
摘要翻译：可用于形成具有式（PhSiO 3（3-x）/ 2（OH）x）的抗反射涂层的倍半硅氧烷树脂 >（3-x）/ 2 （OH）_{X ）_{名词（近远_{（3-x）/ 2 （OH ）_{X ）_{p （RSiO _{（3-x）的 / 2（OH）_{X ）_{q 其中Ph是苯基，Me是甲基，R是聚环氧乙烷基团，x的值是0,1或2; m的值为0.01〜0.99，n为0.01〜0.99，p为0.01〜0.99，q为0.01〜0.50，m + n + p + q〜l。}}}}}}}}

9. 发明申请

WO2005007747A3 PHOTOSENSITIVE SILSESQUIOXANE RESIN 审中-公开
标题翻译：感光硅胶树脂
公开(公告)号：WO2005007747A3
公开(公告)日：2006-04-13
申请号：PCT/US2004020888
申请日：2004-06-30
申请人： DOW CORNING , HU SANLIN , MOYER ERIC SCOTT , WANG SHENG , WYMAN DAVID LEE
发明人： HU SANLIN , MOYER ERIC SCOTT , WANG SHENG , WYMAN DAVID LEE
IPC分类号： C08G77/04 , C08G77/12 , C08G77/24 , G03F7/004 , G03F7/038 , G03F7/039 , G03F7/075
CPC分类号： G03F7/0757 , C08G77/04 , C08G77/12 , G03F7/0046 , G03F7/0382 , G03F7/0392 , Y10S430/106 , Y10S430/115 , Y10S430/12 , Y10S430/122 , Y10S430/126 , Y10S430/143
摘要： This invention pertains to a silsesquioxane resin with improved lithographic properties (such as etch-resistance, transparency, resolution, sensitivity, focus latitude, line edge roughness, and adhesion) suitable as a photoresist; a method for incorporating the fluorinated or non-fluorinated functional groups onto silsesquioxane backbone. The silsesquioxane resins of this invention has the general structure (HSiO 3/2 ) a (RSiO 3/2 ) b wherein; R is an acid dissociable group, ahas a value of 0.2 to 0.9 and b has a value of 0.1 to 0.8 and 0.9
摘要翻译：本发明涉及适合作为光致抗蚀剂的具有改进的光刻性质（例如耐蚀刻性，透明度，分辨率，灵敏度，聚焦宽度，线边缘粗糙度和粘合）的倍半硅氧烷树脂; 将氟化或非氟化官能团引入倍半硅氧烷主链上的方法。本发明的倍半硅氧烷树脂具有通式（HSiO 3/2/2）a（RS 3 O 3/2）其中; R为酸解离基团，其值为0.2〜0.9，b为0.1〜0.8，0.9

10. 发明申请

WO2011011142A3 METHOD AND MATERIALS FOR REVERSE PATTERNING 审中-公开
标题翻译：反向图案的方法和材料
公开(公告)号：WO2011011142A3
公开(公告)日：2011-04-21
申请号：PCT/US2010039415
申请日：2010-06-22
申请人： DOW CORNING , BRADFORD MICHAEL L , MOYER ERIC SCOTT , TAKEUCHI KASUMI , WANG SHENG , YEAKLE CRAIG
发明人： BRADFORD MICHAEL L , MOYER ERIC SCOTT , TAKEUCHI KASUMI , WANG SHENG , YEAKLE CRAIG
IPC分类号： C08G77/18 , C08L83/04 , C09D183/04 , G03F7/075 , G03F7/20
CPC分类号： C08G77/18 , C08L83/04 , C09D183/04 , H01L21/02137 , H01L21/02282 , H01L21/0337
摘要： A silsesquioxane resin is applied on top of the patterned photo-resist and cured to produce a cured silsesquioxane resin on top of the pattern surface. Subsequently, an aqueous base stripper or a reactive ion etch recipe containing CF4 is used to "etch back" the silicon resin to the top of the photoresist material, exposing the entire top surface of the photoresist. Then, a second reactive ion etch recipe containing O2 to etch away the photoresist. The result is a silicon resin film with via holes with the size and shape of the post that were patterned into the photoresist. Optionally, the new pattern can be transferred into the underlying layer(s).
摘要翻译：将一倍半硅氧烷树脂施加在图案化的光致抗蚀剂的顶部并固化，以在图案表面的顶部上产生固化的倍半硅氧烷树脂。随后，使用包含CF 4的水性碱性剥离剂或反应性离子蚀刻配方将硅树脂“回蚀”到光致抗蚀剂材料的顶部，暴露光致抗蚀剂的整个顶表面。然后，第二反应离子蚀刻配方含有O 2以蚀刻掉光致抗蚀剂。结果是具有图案化为光致抗蚀剂的柱的尺寸和形状的通孔的硅树脂膜。可选地，新图案可以被转移到下层中。

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