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1. 发明申请

WO2006135688A3 POLAR SURFACE PREPARATION OF NITRIDE SUBSTRATES 审中-公开
标题翻译：氮化物基板的极性表面制备
公开(公告)号：WO2006135688A3
公开(公告)日：2007-03-15
申请号：PCT/US2006022329
申请日：2006-06-08
申请人： CRYSTAL IS INC , SLACK GLEN A , SCHUJMAN SANDRA B , MEYER NICHOLAS R , SCHOWALTER LEO J
发明人： SLACK GLEN A , SCHUJMAN SANDRA B , MEYER NICHOLAS R , SCHOWALTER LEO J
IPC分类号： C30B33/00 , C09G1/02 , C30B29/40 , H01L21/306
CPC分类号： C09G1/02 , C30B25/18 , C30B29/403 , H01L21/02024 , H01L21/31053
摘要： Fabrication of AlN substrates suitable for epitaxial deposition of high-quality nitride-based compounds thereon having at least one single-crystal and substantially planarized useful area exceeding 1 cm2 with a peak-to-valley surface topography in the useful area being less than 50 nm is accomplished by employing an active solution such as fluorine or chlorine-based compound that reacts non-selectively with the substrate material and abrasive particles.
摘要翻译：适用于外延沉积高质量氮化物基化合物的AlN衬底的制备具有至少一个单晶并且基本上平坦化的有用面积超过1cm 2，有用区域中的峰谷表面形貌小于50nm 是通过使用与基材和磨料颗粒无选择性反应的活性溶液如氟或氯基化合物来实现的。

2. 发明申请

WO2008042020A3 NITRIDE SEMICONDUCTOR HETEROSTRUCTURES AND RELATED METHODS 审中-公开
标题翻译：氮化物半导体异质结构及相关方法
公开(公告)号：WO2008042020A3
公开(公告)日：2008-09-12
申请号：PCT/US2007011075
申请日：2007-05-08
申请人： CRYSTAL IS INC , SCHOWALTER LEO J , SLACK GLEN A , LIU SHIWEN , BONDOKOV ROBERT T , MORGAN KENNETH E , SMART JOSEPH A , BETTLES TIMOTHY J , ROJO J CARLOS
发明人： SCHOWALTER LEO J , SLACK GLEN A , LIU SHIWEN , BONDOKOV ROBERT T , MORGAN KENNETH E , SMART JOSEPH A , BETTLES TIMOTHY J , ROJO J CARLOS
IPC分类号： H01L21/20 , H01L21/203
CPC分类号： H01L33/0075 , H01L21/02389 , H01L21/02458 , H01L21/0251 , H01L21/0254 , H01L2924/0002 , H01S5/32341 , H01S2301/173 , H01S2304/04 , H01L2924/00
摘要： Semiconductor structures and devices based thereon include an aluminum nitride single-crystal substrate and at least one layer epitaxially grown thereover. The epitaxial layer may comprise at least one of AlN, GaN, InN, or any binary or tertiary alloy combination thereof, and have an average dislocation density within the semiconductor heterostructure is less than about 10 6 cm -2 . Bulk single crystals of AlN have a diameter greater than about 25 mm and dislocation densities of about 10,000 cm -2 or less, and high-quality AlN substrates have surfaces of any desired crystallographic orientation fabricated from these bulk crystals.
摘要翻译：基于此的半导体结构和器件包括氮化铝单晶衬底和在其上外延生长的至少一个层。外延层可以包括AlN，GaN，InN或其任何二元或三元合金组合中的至少一种，并且具有在半导体异质结构内的平均位错密度小于大约10 6 cm / cm ^{-2 。 AlN的块状单晶具有大于约25mm的直径和约10,000cm -2或更小的位错密度，并且高质量的AlN衬底具有由这些块状晶体制造的任何期望的晶体取向的表面。}

3. 发明申请

WO2007062250A3 LARGE ALUMINUM NITRIDE CRYSTALS WITH REDUCED DEFECTS AND METHODS OF MAKING THEM 审中-公开
标题翻译：具有减少缺陷的大型氮化铝晶体及其制备方法
公开(公告)号：WO2007062250A3
公开(公告)日：2007-08-30
申请号：PCT/US2006045540
申请日：2006-11-28
申请人： CRYSTAL IS INC , BONDOKOV ROBERT T , MORGAN KENNETH , SLACK GLEN A , SCHOWALTER LEO J
发明人： BONDOKOV ROBERT T , MORGAN KENNETH , SLACK GLEN A , SCHOWALTER LEO J
IPC分类号： C30B23/00 , C30B29/40
CPC分类号： C30B23/02 , B28D5/00 , C23C16/34 , C30B23/00 , C30B25/02 , C30B25/08 , C30B25/10 , C30B25/18 , C30B29/403 , C30B33/02 , H01L21/0201 , H01L21/02389 , H01L21/0254 , H01L21/30625 , Y10T428/21
摘要： Reducing the microvoid (MV) density in AlN ameliorates numerous problems related to cracking during crystal growth, etch pit generation during the polishing, reduction of the optical transparency in an AlN wafer, and, possibly, growth pit formation during epitaxial growth of AlN and/or AlGaN. This facilitates practical crystal production strategies and the formation of large, bulk AlN crystals with low defect densities - e.g., a dislocation density below 10 4 cm -3 and an inclusion density below 10 4 cm -3 and/or a MV density below 10 4 cm -3 .
摘要翻译：降低AlN中的微孔（MV）密度改善了与晶体生长期间的开裂有关的许多问题，抛光期间的蚀刻坑产生，AlN晶片中的光学透明度的降低以及可能的AlN的外延生长期间的生长凹坑形成和/ 或AlGaN。这有助于实际的晶体生产策略和形成具有低缺陷密度的大的大块AlN晶体 - 例如，位错密度低于10 -4 cm -3，并且包含密度低于而且，或者低于10 -4 cm -3的MV密度。

4. 发明申请

WO2007065018A2 DOPED ALUMINUM NITRIDE CRYSTALS AND METHODS OF MAKING THEM 审中-公开
标题翻译：掺杂的氮化铝晶体及其制造方法
公开(公告)号：WO2007065018A2
公开(公告)日：2007-06-07
申请号：PCT/US2006046300
申请日：2006-12-04
申请人： CRYSTAL IS INC , SCHOWALTER LEO J , SLACK GLEN A
发明人： SCHOWALTER LEO J , SLACK GLEN A
CPC分类号： H01L29/207 , C30B23/00 , C30B29/403 , H01L21/0254 , H01L21/02579 , H01L21/2258 , H01L29/2003 , H01L33/325
摘要： Fabrication of doped AlN crystals and/or AIGaN epitaxial layers with high conductivity and mobility is accomplished by, for example, forming mixed crystals including a plurality of impurity species and electrically activating at least a portion of the crystal.
摘要翻译：通过例如形成包括多种杂质物质的混合晶体并且电激活至少一部分晶体来实现具有高导电性和迁移率的掺杂AlN晶体和/或AlGaN外延层的制造。

5. 发明申请

WO2008094464A2 THICK PSEUDOMORPHIC NITRIDE EPITAXIAL LAYERS 审中-公开
标题翻译：厚度拟伪晶体氮化物外延层
公开(公告)号：WO2008094464A2
公开(公告)日：2008-08-07
申请号：PCT/US2008001003
申请日：2008-01-25
申请人： CRYSTAL IS INC , SCHOWALTER LEO J , SMART JOSEPH A , GRANDUSKY JAMES R , LIU SHIWEN
发明人： SCHOWALTER LEO J , SMART JOSEPH A , GRANDUSKY JAMES R , LIU SHIWEN
IPC分类号： H01L21/20
CPC分类号： H01L21/0262 , H01L21/02389 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/0251 , H01L21/0254 , H01L33/08 , H01L33/12
摘要： Semiconductor structures are fabricated to include strained epitaxial layers exceeding a predicted critical thickness thereof.
摘要翻译：半导体结构被制造成包括超过预测的临界厚度的应变外延层。

6. 发明申请

WO2004061896A3 METHOD AND APPARATUS FOR PRODUCING MONOCRYSTALLINE AIN 审中-公开
标题翻译：用于生产单晶AIN的方法和装置
公开(公告)号：WO2004061896A3
公开(公告)日：2004-09-10
申请号：PCT/US0314579
申请日：2003-05-07
申请人： CRYSTAL IS INC
发明人： SCHOWALTER LEO J , SLACK GLEN A , ROJO J CARLOS
IPC分类号： C30B11/00 , C30B23/00 , C30B25/00 , C30B35/00
CPC分类号： C30B23/00 , C30B11/003 , C30B29/403 , Y10T117/10
摘要： A method and apparatus for producing bulk single crystals (7) of AIN includes a crystal growth enclosure (9) with Al and N2 source (11) material therein, capable of forming bulk crystals. The apparatus maintains the N2 partial pressure at greater than stoichiometric pressure relative to the Al within the crystal growth enclosure (9), while maintaining the total vapor pressure in the crystal growth enclosure (9) at super-atmospheric pressure. At least one nucleation site (19) is provided in the crystal growth enclosure (9), and provision is made for cooling the nucleation site relative to other locations in the crystal growth enclosure (9). The Al and N2 vapor is then deposited to grow single crystalline AIN (7) at the nucleation site (19).
摘要翻译：用于制造AIN的本体单晶（7）的方法和装置包括其中具有Al和N2源（11）材料的晶体生长封壳（9），其能够形成本体晶体。该装置相对于晶体生长壳体（9）内的Al保持大于化学计量压力的N2分压，同时在超大气压力下保持晶体生长壳体（9）中的总蒸气压。在晶体生长封壳（9）中提供至少一个成核位点（19），并且提供用于相对于晶体生长封壳（9）中的其它位置冷却成核位置。然后沉积Al和N 2蒸气以在成核位点（19）处生长单晶AIN（7）。

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