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1. 发明申请

WO2009119280A3 PHOTO-SENSING DEVICE, PHOTOSENSOR, AND DISPLAYDEVICE 审中-公开
标题翻译：照相感光装置，照相机和显示设备
公开(公告)号：WO2009119280A3
公开(公告)日：2010-07-15
申请号：PCT/JP2009054242
申请日：2009-02-27
申请人： CASIO COMPUTER CO LTD , YAMAGUCHI IKUHIRO
发明人： YAMAGUCHI IKUHIRO
IPC分类号： H01L31/113 , H01L27/146 , H01L31/105
CPC分类号： H01L31/105 , G09G3/3406 , G09G3/36 , G09G2320/0242 , G09G2320/0626 , G09G2360/144 , G09G2360/145 , H01L27/14603 , H01L27/14692 , H01L31/1136 , H01L2924/0002 , H01L2924/00
摘要： A photo-sensing device is disclosed, comprising a photoelectric conversion semiconductor thin film (14), thin films (16a, 16b) for ohmic contacts to be provided to form an incident light window on one face of the photoelectric conversion semiconductor thin film (14), first and second ohmic electrodes (17, 18) installed on the thin films (16a, 16b) for the ohmic contacts, a connection wiring (15) for short-circuiting the first and the second ohmic electrodes (17, 18), an insulating film (13) provided on the other face of the photoelectric conversion semiconductor thin film (14), and a first electrode (12) provided on the face of the insulating film (13) that does not contact the photoelectric conversion semiconductor thin film (14).
摘要翻译：公开了一种感光装置，包括光电转换半导体薄膜（14），用于欧姆接触的薄膜（16a，16b），用于在光电转换半导体薄膜（14）的一个面上形成入射光窗口），安装在用于欧姆接触的薄膜（16a，16b）上的第一和第二欧姆电极（17,18），用于使第一和第二欧姆电极（17,18）短路的连接布线（15）设置在所述光电转换半导体薄膜（14）的另一面上的绝缘膜（13），以及设置在所述绝缘膜（13）的与所述光电转换半导体薄膜不接触的面上的第一电极（12）（14）。

2. 发明申请

WO2006025609A3 THIN FILM TRANSISTOR AND ITS MANUFACTURING METHOD 审中-公开
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：WO2006025609A3
公开(公告)日：2006-04-27
申请号：PCT/JP2005016566
申请日：2005-09-02
申请人： CASIO COMPUTER CO LTD , ISHII HIROMITSU , HOKARI HITOSHI , YOSHIDA MOTOHIKO , YAMAGUCHI IKUHIRO
发明人： ISHII HIROMITSU , HOKARI HITOSHI , YOSHIDA MOTOHIKO , YAMAGUCHI IKUHIRO
IPC分类号： H01L29/45 , H01L21/336 , H01L29/417 , H01L29/786
CPC分类号： H01L29/7869 , H01L29/41733 , H01L29/45 , H01L29/66969 , H01L29/78618
摘要： A thin film transistor of the present invention includes a semiconductor thin film (8); a gate insulating film (7) formed on one surface of the semiconductor thin film (8); a gate electrode (6) formed to be opposite to the semiconductor thin film (8) through the gate insulating film (7); a source electrode (15) and a drain electrode (16) electrically connected to the semiconductor thin film (8); a source region; a drain region; and a channel region. The thin film transistor further includes an insulating film (9) formed on a peripheral portion corresponding to at least the source region and the drain region of the semiconductor thin film (8), and having a contact hole (10, 11) through which at least a part of each of the source region and the drain region is exposed wherein the source electrode (15) and the drain electrode (16) are connected to the semiconductor thin film (8) through the contact hole (10, 11).
摘要翻译：本发明的薄膜晶体管包括半导体薄膜（8）; 形成在半导体薄膜（8）的一个表面上的栅极绝缘膜（7）; 通过栅极绝缘膜形成为与半导体薄膜（8）相对的栅电极（6）; 电连接到半导体薄膜（8）的源电极（15）和漏电极（16）。源区; 漏区; 和通道区域。薄膜晶体管还包括形成在至少对应于半导体薄膜（8）的源极区域和漏极区域的周边部分上的绝缘膜（9），并且具有接触孔（10,11）源极区域和漏极区域中的至少一部分被暴露，其中源电极（15）和漏电极（16）通过接触孔（10,11）连接到半导体薄膜（8）。

3. 发明申请

WO2008084650A3 PHOTOSENSOR 审中-公开
标题翻译：光传感器
公开(公告)号：WO2008084650A3
公开(公告)日：2008-09-18
申请号：PCT/JP2007074587
申请日：2007-12-14
申请人： CASIO COMPUTER CO LTD , MATSUMOTO HIROSHI , YAMAGUCHI IKUHIRO , KOBAYASHI HIROKAZU
发明人： MATSUMOTO HIROSHI , YAMAGUCHI IKUHIRO , KOBAYASHI HIROKAZU
IPC分类号： H01L31/0224 , H01L29/417 , H01L29/786 , H01L31/0392 , H01L31/113
CPC分类号： H01L31/022408 , H01L27/14678 , H01L31/03921 , H01L31/1136 , Y02E10/50
摘要： A photosensor includes a semiconductor thin film (5) for photoelectric conversion having a first side portion and a second side portion. A source electrode (9) extends in the longitudinal direction of the semiconductor thin film (5) and has a side edge portion (9b, 9c) that overlaps the first side portion of the semiconductor thin film (5), and a drain electrode (10) extends in the longitudinal direction and has a side edge portion (10b, 10c) that overlaps the second side portion of the semiconductor thin film (5). At least one of the side edge portions (9b, 9c, 10b, 10c) of the source and drain electrodes (9, 10) has protruding portions (9b, 10b) which are arranged along the longitudinal direction and which overlap the semiconductor thin film (5), and notched portions (9c, 10c) formed between the protruding portions (9b, 10b). An ohmic contact layer (7, 8) is formed between the semiconductor thin film (5) and the protruding portions (9b, 10b) of the at least one of the side edge portions (9b, 9c, 10b, 10c) of the source and drain electrodes (9, 10).
摘要翻译：光电传感器包括具有第一侧部和第二侧部的用于光电转换的半导体薄膜（5）。源电极（9）在半导体薄膜（5）的长度方向上延伸，具有与半导体薄膜（5）的第一侧面重叠的侧缘部（9b，9c）和漏电极 10）在长度方向上延伸并且具有与半导体薄膜（5）的第二侧部重叠的侧边缘部分（10b，10c）。源电极和漏电极（9,10）的侧边缘部分（9b，9c，10b，10c）中的至少一个具有突出部分（9b，10b），沿着纵向方向布置并与半导体薄膜（5），以及形成在突出部（9b，10b）之间的切口部（9c，10c）。在半导体薄膜（5）和源极的至少一个侧边缘部分（9b，9c，10b，10c）的突出部分（9b，10b）之间形成欧姆接触层（7,8）和漏电极（9,10）。

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