专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2011146460A1 PRODUCTION OF LARGE, HIGH PURITY SINGLE CRYSTAL CVD DIAMOND 审中-公开
标题翻译：生产大型，高纯度单晶CVD金刚石
公开(公告)号：WO2011146460A1
公开(公告)日：2011-11-24
申请号：PCT/US2011/036780
申请日：2011-05-17
申请人： CARNEGIE INSTITUTION OF WASHINGTON , HEMLEY, Russell , MENG, Yu-fei , YAN, Chih-shiue , MAO, Ho-kwang
发明人： HEMLEY, Russell , MENG, Yu-fei , YAN, Chih-shiue , MAO, Ho-kwang
IPC分类号： C23C16/511 , C23C16/50 , C23C16/26 , C23C16/27
CPC分类号： C30B29/04 , C30B25/105
摘要： The invention relates to single crystal diamond with high optical quality and methods of making the same. The diamond possesses an intensity ratio of the second-order Raman peak to the fluorescence background of around 5 or greater.
摘要翻译：本发明涉及具有高光学质量的单晶金刚石及其制造方法。钻石具有二级拉曼峰与荧光背景的强度比约为5或更大。

2. 发明申请

WO2007018555A3 ULTRATOUCH CVD SINGLE CRYSTAL DIAMOND AND THREE DIMENSIONAL GROWTH THEREOF 审中-公开
公开(公告)号：WO2007018555A3
公开(公告)日：2007-02-15
申请号：PCT/US2005/032199
申请日：2005-09-09
申请人： CARNEGIE INSTITUTION OF WASHINGTON , HEMLEY, Russell, J. , MAO, Ho-kwang , YAN, Chih-Shiue
发明人： HEMLEY, Russell, J. , MAO, Ho-kwang , YAN, Chih-Shiue
IPC分类号： C01B31/06 , C30B25/00 , C30B29/04
摘要： The invention relates to a single-crystal diamond grown by microwave plasma chemical vapor deposition that has a toughness of at least about 30 MPa m 1/2 . The invention also relates to a method of producing a single-crystal diamond with a toughness of at least about 30 MPa m 1/2 . The invention further relates to a process for producing a single crystal CVD diamond in three dimensions on a single crystal diamond substrate.

3. 发明申请

WO2008094491A1 NEW LASER USES FOR SINGLE-CRYSTAL CVD DIAMOND 审中-公开
标题翻译：新型激光用于单晶CVD金刚石
公开(公告)号：WO2008094491A1
公开(公告)日：2008-08-07
申请号：PCT/US2008/001071
申请日：2008-01-28
申请人： CARNEGIE INSTITUTION OF WASHINGTON , HEMLEY, Russell, J. , MAO, Ho-kwang , YAN, Chih-Shiue
发明人： HEMLEY, Russell, J. , MAO, Ho-kwang , YAN, Chih-Shiue
IPC分类号： C30B25/10 , C30B25/12 , C30B25/16 , C30B25/20 , C30B29/04
CPC分类号： C30B29/04 , C30B25/105 , C30B25/12 , H01S3/0405 , H01S3/0612 , H01S5/02484
摘要： A single-crystal CVD diamond produced with a method wherein the temperature of the diamond growth surface is in the range of 900 - 1400°C and wherein the diamond is mounted in a heat sink. The diamond is grown by a microwave plasma CVD, in a deposition chamber under 150 torr, wherein the CH 4 is over 8% per unit of H 2 . Said diamond can be used as a heat sink for a laser. Another use, is as a frequency converter, as a χ (3) nonlinear crystalline material for Raman laser converters comprising single crystal diamond.
摘要翻译：一种采用其中金刚石生长表面的温度在900-1400℃范围内并且其中金刚石安装在散热器中的方法生产的单晶CVD金刚石。金刚石通过微波等离子体CVD在150托下的沉积室中生长，其中CH 4单位单位H 2超过8％。所述金刚石可用作激光器的散热器。另一种用途是作为变频器，作为包括单晶金刚石的拉曼激光转换器的非线性结晶材料。

4. 发明申请

WO2003040440A3 APPARATUS AND METHOD FOR DIAMOND PRODUCTION 审中-公开
公开(公告)号：WO2003040440A3
公开(公告)日：2003-05-15
申请号：PCT/US2002/035659
申请日：2002-11-07
申请人： CARNEGIE INSTITUTION OF WASHINGTON , THE UAB RESEARCH FOUNDATION , HEMLEY, Russell, J. , MAO, Ho-kwang , YAN, Chih-shiue , VOHRA, Yogesh, K.
发明人： HEMLEY, Russell, J. , MAO, Ho-kwang , YAN, Chih-shiue , VOHRA, Yogesh, K.
IPC分类号： C30B25/02
摘要： An apparatus for producing diamond in a deposition chamber including a heat/sinking holder for holding a diamond and for making thermal contact with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, a noncontact temperature measurement device positioned to measure temperature of the diamond across the growth surface of the diamond and a main process controller for receiving a temperature measurement from the noncontact temperature measurement device and controlling temperature of the growth surface such that all temperature gradients across the growth surface are less than 20 ° C. The method for producing diamond includes positioning diamond in a holder such that a thermal contact is made with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, measuring temperature of the growth surface of the diamond to generate temperature measurements, controlling temperature of the growth surface based upon the temperature measurements, and growing single-crystal diamond by microwave plasma chemical vapor deposition on the growth surface, wherein a growth rate of the diamond is greater than 1 micrometer per hour.

5. 发明申请

WO2003040440A2 APPARATUS AND METHOD FOR DIAMOND PRODUCTION 审中-公开
标题翻译：钻石生产的装置和方法
公开(公告)号：WO2003040440A2
公开(公告)日：2003-05-15
申请号：PCT/US2002/035659
申请日：2002-11-07
申请人： CARNEGIE INSTITUTION OF WASHINGTON , THE UAB RESEARCH FOUNDATION , HEMLEY, Russell, J. , MAO, Ho-kwang , YAN, Chih-shiue , VOHRA, Yogesh, K.
发明人： HEMLEY, Russell, J. , MAO, Ho-kwang , YAN, Chih-shiue , VOHRA, Yogesh, K.
IPC分类号： C30B
CPC分类号： C30B25/105 , C30B25/12 , C30B29/04 , Y10T117/1004 , Y10T117/1008 , Y10T117/1016 , Y10T117/108
摘要： An apparatus for producing diamond in a deposition chamber including a heat/sinking holder for holding a diamond and for making thermal contact with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, a noncontact temperature measurement device positioned to measure temperature of the diamond across the growth surface of the diamond and a main process controller for receiving a temperature measurement from the noncontact temperature measurement device and controlling temperature of the growth surface such that all temperature gradients across the growth surface are less than 20° C. The method for producing diamond includes positioning diamond in a holder such that a thermal contact is made with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, measuring temperature of the growth surface of the diamond to generate temperature measurements, controlling temperature of the growth surface based upon the temperature measurements, and growing single-crystal diamond by microwave plasma chemical vapor deposition on the growth surface, wherein a growth rate of the diamond is greater than 1 micrometer per hour.
摘要翻译：一种用于在沉积室中制造金刚石的装置，包括用于保持金刚石并用于与金刚石的生长表面的边缘相邻的菱形的侧表面进行热接触的加热/沉没支架，非接触式温度测量装置，测量钻石在金刚石的生长表面上的温度，以及用于接收来自非接触式温度测量装置的温度测量并控制生长表面的温度的主过程控制器，使得生长表面上的所有温度梯度都小于20℃ 制造金刚石的方法包括将金刚石定位在保持器中，使得与钻石的生长表面的边缘相邻的金刚石的侧表面进行热接触，测量金刚石的生长表面的温度以产生温度测量，基于温度测量控制生长表面的温度杂质和通过微波等离子体化学气相沉积在生长表面上生长的单晶金刚石，其中金刚石的生长速率大于1微米/小时。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式