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    • 10. 发明申请
    • ARRANGEMENT FOR REDUCING CONTAMINATION IN A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS
    • 减少微波投影曝光装置污染的装置
    • WO2016113113A1
    • 2016-07-21
    • PCT/EP2015/081412
    • 2015-12-30
    • CARL ZEISS SMT GMBHHARTJES, JoachimGRUNER, Toralf
    • HARTJES, JoachimGRUNER, Toralf
    • G03F7/20
    • G03F7/70916G03F7/70033H05G2/005H05G2/008
    • The invention relates to an arrangement for reducing contamination in a microlithographic projection exposure apparatus, wherein the projection exposure apparatus is designed for operation in the EUV and comprises an illumination device, wherein during the operation of the projection exposure apparatus EUV light generated by a plasma excitation of a target material brought about by a first laser light source enters the illumination device via an intermediate focus (IF). The arrangement comprises a second laser light source (140), which directs directional electromagnetic radiation into a region adjoining the intermediate focus (IF) within the illumination device, wherein said second laser light source (140) is designed in such a way that the directional electromagnetic radiation of the second laser light source (140) brings about an evaporation or plasma excitation for at least part of target material that has entered said region during the operation of the projection exposure apparatus.
    • 本发明涉及一种用于减少微光刻投影曝光装置中的污染的装置,其中投影曝光装置被设计为在EUV中操作并且包括照明装置,其中在投影曝光装置的操作期间由等离子体激发产生的EUV光 由第一激光光源引起的目标材料经由中间焦点(IF)进入照明装置。 该装置包括第二激光源(140),其将定向电磁辐射引导到与照明装置内的中间聚焦(IF)相邻的区域中,其中所述第二激光源(140)被设计成使得定向 第二激光光源(140)的电磁辐射在投影曝光装置的操作期间对已经进入所述区域的目标材料的至少一部分产生蒸发或等离子体激发。