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    • 2. 发明申请
    • VERFAHREN ZUR HERSTELLUNG EINES REFLEKTIVEN OPTISCHEN ELEMENTS UND REFLEKTIVES OPTISCHES ELEMENT
    • 制备反射光学元件和反射光学元件的方法
    • WO2017134020A1
    • 2017-08-10
    • PCT/EP2017/051961
    • 2017-01-30
    • CARL ZEISS SMT GMBH
    • ENKISCH, Hartmut
    • G02B5/08G02B5/09G03F7/20
    • G02B5/09G02B5/0891G03F7/70075G03F7/70116G03F7/7015
    • Zur Erhöhung der Reflektivität von aus mindestens zwei Obereinheiten zusammengesetzten reflektiven optischen Element für den extrem ultravioletten Wellenlängenbereich, bei denen jede Obereinheit (B1-B5) eine Vielzahl von Untereinheiten aufweist, beispielsweise reflektive optische Elemente in Form von Spiegelarrays, wird ein Verfahren zu deren Herstellung vorgeschlagen mit den Schritten: - Bestimmen von über die Fläche jeder Obereinheit (B1-B5) im Betrieb auftretenden Einfallswinkeln und Einfallswinkelbandbreiten; - Aufbringen einer reflektiven Beschichtung auf jeder Obereinheit (B1-B5), die an die jeweils über ihre Fläche bestimmten Einfallswinkel und Einfallswinkelbandbreiten angepasst ist. Dies eignet sich insbesondere zur Herstellung von reflektiven optischen Elementen, die als Feldfacettenspiegel, beispielsweise in Form von mikroelektromechanischen Spiegelarrays, für eine EUV-Lithographievorrichtung ausgebildet sind.
    • 对于每个子单元(B1-B5)具有多个子单元的极紫外波长范围,为了增加由至少两个子单元组成的反射光学元件的反射率, 例如,在反射镜阵列的形式的反射光学元件,提出一种方法,用于其包括以下步骤的制备: - 确定在所述F1Ä枝每个上部单元(B1-B5)的发病率和在操作中产生发生率带宽的角度的角度; - 在每个上部单元(B1-B5)上施加反射涂层,该涂层适合于由其表面确定的相应入射角和入射角带宽。 这特别适合于生产反射光学元件,其被设计为场分面镜,例如以微机电反射镜阵列的形式,用于EUV光刻设备
    • 3. 发明申请
    • MIRROR FOR USE IN A MICROLITHOGRAPHY PROJECTION EXPOSURE APPARATUS
    • 用于微观投影曝光装置的镜子
    • WO2011032813A1
    • 2011-03-24
    • PCT/EP2010/062426
    • 2010-08-26
    • CARL ZEISS SMT GMBHROCKTAESCHEL, MartinENKISCH, HartmutSTICKEL, Franz-JosefNATT, OliverMANN, Hans-JürgenMIGURA, Sascha
    • ROCKTAESCHEL, MartinENKISCH, HartmutSTICKEL, Franz-JosefNATT, OliverMANN, Hans-JürgenMIGURA, Sascha
    • G02B5/08
    • G03F7/70958G02B5/0833G03F7/70191G03F7/70308G03F7/70316
    • The invention relates to a mirror for use in a microlithography projection exposure apparatus, comprising a substrate and a reflective coating, wherein the reflective coating itself in turn comprises a first group of layers and a second group of layers. In this case, the second group of layers is arranged between the substrate and the first group of layers. Furthermore, both the first group of layers and the second group of layers comprise a plurality of alternating first and second layers arranged one above another, wherein the first layers comprise a first material, the refractive index of which for radiation having a wavelength in the range of 5-30 nm is greater than the refractive index of a second material, which the second layers comprise. In this case, the first group of layers is configured in such a way that it comprises a number of layers that is greater than 20, such that, upon irradiation with radiation having a wavelength in the range of 5-30 nm, less than 20% of the radiation reaches the second group of layers, and wherein the second group of layers has a layer thickness variation for the correction of the surface form of the mirror. What is thereby achieved is that the second group of layers, which has a layer thickness variation for the correction of the surface form of the mirror, does not significantly affect the reflectivity properties of the mirror.
    • 本发明涉及一种用于微光刻投影曝光设备的反射镜,其包括基底和反射涂层,其中反射涂层本身又包括第一组层和第二组层。 在这种情况下,第二组层布置在衬底和第一组层之间。 此外,第一组层和第二组层都包括多个彼此排列的交替的第一和第二层,其中第一层包括第一材料,其第一材料的折射率用于具有在该范围内的波长的辐射 5-30nm的厚度大于第二层包含的第二材料的折射率。 在这种情况下,第一组层被配置成使得其包括大于20的多个层,使得当辐射具有5-30nm的波长的辐射时,小于20 辐射的百分比达到第二组层,并且其中第二组层具有用于校正反射镜的表面形式的层厚度变化。 由此实现的是,具有用于校正反射镜的表面形式的层厚度变化的第二组层不会显着影响反射镜的反射性质。
    • 4. 发明申请
    • PROJECTION OPTICAL UNIT FOR EUV PROJECTION LITHOGRAPHY
    • 用于EUV投影光刻的投影光学单元
    • WO2018010960A1
    • 2018-01-18
    • PCT/EP2017/065936
    • 2017-06-28
    • CARL ZEISS SMT GMBH
    • SCHWAB, MarkusENKISCH, HartmutSCHICKETANZ, Thomas
    • G03F7/20G02B17/06
    • A projection optical unit (7) for EUV projection lithography has a plurality of mirrors (M1 to M10) for imaging an object field (4) into an image field (8) with illumination light (3). At least one of the mirrors (M1, M9, M10) is embodied as an NI mirror and at least one of the mirrors (M2 to M8) is embodied as a GI mirror. A mirror dimension Dx of the at least one NI mirror in a plane of extent (xz) perpendicular to a plane of incidence (yz) satisfies the following relationship: 4 LLWx/IWPV max max cos(a)) max denotes the maximum difference between a maximum angle of incidence and a minimum angle of incidence of the illumination light (3) on the reflection surface of the NI mirror (M1, M9, M10) and on the reflection surface of the GI mirror (M2 to M8). a denotes the angle of incidence of a chief ray (16) of the central field point on the reflection surface of the GI mirror (M2 to M8). This results in a projection optical unit which is optimizable, in particular for very short EUV illumination light wavelengths.
    • 用于EUV投影光刻的投影光学单元(7)具有用于利用照明光(3)将物场(4)成像到像场(8)中的多个反射镜(M1至M10) 。 至少一个反射镜(M1,M9,M10)被实施为NI反射镜,并且至少一个反射镜(M2至M8)被实施为GI反射镜。 至少一个NI反射镜在垂直于入射平面(yz)的范围平面(xz)中的反射镜维度Dx满足以下关系式:4 LLWx / IWPV max DX。 所述至少一个GI反射镜在入射平面(yz)中的反射镜维度Dy满足以下关系式:4 LLWy /(IWPV max cos(a))< 镝。 这里,LLWx和LLWy分别表示投影光学单元(7)在范围平面(xz)和入射平面(yz)中的面积,IWPV max表示在 在NI反射镜(M1,M9,M10)的反射表面上以及在GI反射镜(M2至M8)的反射表面上的照明光(3)的最大入射角和最小入射角。 a表示GI镜(M2至M8)的反射表面上的中心视场点的主光线(16)的入射角。 这导致可优化的投影光学单元,特别是对于非常短的EUV照明光波长。
    • 10. 发明申请
    • OPTICAL SYSTEM, IN PARTICULAR FOR A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS
    • 光学系统,特别是用于微型投影曝光设备
    • WO2018007081A1
    • 2018-01-11
    • PCT/EP2017/063715
    • 2017-06-06
    • CARL ZEISS SMT GMBHENKISCH, HartmutSCHICKETANZ, ThomasKALISKY, MatusDIER, Oliver
    • ENKISCH, HartmutSCHICKETANZ, ThomasKALISKY, MatusDIER, Oliver
    • G03F7/20G21K1/06
    • The invention relates to an optical system, in particular for a microlithographic projection exposure apparatus, with at least one mirror (200) which has an optically effective surface and, for electromagnetic radiation of a predefined operating wavelength impinging on the optically effective surface at an angle of incidence of at least 65° relative to the respective surface normal, has a reflectivity of at least 0.5, wherein the mirror has a reflection layer (210) and a compensation layer (220) which is arranged above this reflection layer (210) in the direction of the optically effective surface, wherein the compensation layer (220), for an intensity distribution generated in a pupil plane or a field plane of the optical system during operation thereof, reduces the difference between the maximum and the minimum intensity value by at least 20% compared to an analogous structure without the compensation layer (220).
    • 本发明涉及一种光学系统,特别是用于微光刻投影曝光装置的光学系统,其具有至少一个反射镜(200),该反射镜具有光学有效表面,并且对于预定工作波长入射的电磁辐射 以至少65°的入射角在光学有效表面上; 相对于相应的表面法线具有至少0.5的反射率,其中该反射镜具有反射层(210)和补偿层(220),该补偿层布置在该反射层(210)上方的光学有效表面 ,其中对于在其操作期间在光学系统的光瞳平面或场平面中产生的强度分布,补偿层(220)将最大强度值与最小强度值之间的差减小至少20%,与类似 结构没有补偿层(220)。