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    • 1. 发明申请
    • METHOD FOR PRODUCING SEMICONDUCTIVE LAYERS
    • 用于生产半导体层
    • WO2010125011A3
    • 2011-03-31
    • PCT/EP2010055499
    • 2010-04-26
    • BASF SEKARPOV ANDREYFLEISCHHAKER FRIEDERIKEDOMKE IMMEKASTLER MARCELWLOKA VERONIKAWEBER LOTHAR
    • KARPOV ANDREYFLEISCHHAKER FRIEDERIKEDOMKE IMMEKASTLER MARCELWLOKA VERONIKAWEBER LOTHAR
    • C23C18/12H01L21/288
    • C23C18/1216C23C18/1245H01L21/02381H01L21/02488H01L21/02554H01L21/02565H01L21/02628H01L27/1292H01L29/66742H01L29/66969H01L29/7869
    • The present invention relates to a method for producing a layer containing at least one semiconductive metal oxide on a substrate, comprising at least the steps of: (A) producing a solution containing at least one precursor compound of the at least one metal oxide selected from the group of carboxylates from monocarboxylic, dicarbonic, or polycarboxylic acids with at least three carbon atoms or derivatives of monocarboxylic, dicarbonic, or polycarboxylic acids, alcoholates, hydroxides, semicarbazides, carbamates, hydroxamates, isocyanates, amidins, amidrazones, carbamide derivatives, hydroxylamines, oximes, urethanes, ammonia, amines, phosphines, ammonium compounds, azides of the corresponding metal and compounds thereof, in at least one solvent; (B) application of the solvent of step (A) on the substrate; and (C) thermal treatment of the substrate of step (B) at a temperature of 20 to 200 degrees Celsius, in order to transfer the at least one precursor compound in at least one semiconductive metal oxide. In the event that in step (A), electrically neutral [(OH)x(NH3)yZn]z with x, y, and z independently from one another 0.01 to 10, is used as precursor compound, said precursor compound is obtained by conversion of zinc oxide or zinc hydroxide with ammonia; a substrate, which is coated with at least one semiconductive metal oxide, obtainable by said method; the application of said substrate in electronic components; and a method for producing electronically neutral [(OH)x(NH3)yZn]z with x, y, and z independently from one another 0.01 to 10, by conversion of zinc oxide and/or zinc hydroxide with ammonia.
    • 本发明涉及一种方法,用于制造至少包括以下步骤:在基材上含有至少一个半导电金属氧化物的层:(A)制备含有选自单 - 羧酸盐组成的组中的至少一种金属氧化物的至少一种前体化合物的溶液中,二 - 或者具有至少三个碳原子,或单 - ,二 - 或多元羧酸,醇化物,氢氧化物,氨基脲衍生物的多羧酸,Carbaminaten,异羟肟酸盐,异氰酸酯,脒,氨基腙,脲衍生物,羟胺,肟,氨基甲酸乙酯,氨,胺,膦,铵 化合物,,相应金属的叠氮化物和它们的混合物,在至少一种溶剂中,(B)将来自步骤溶液(a)以20〜200的温度的基板和(C)热处理步骤(B)的基板 ℃,在wenigst所述至少一种前体化合物 到ENS转换半导体金属氧化物,其中,如果在步骤(A)是电中性的[(OH)X(NH 3)YZN】Z,其中x,y和z,各自独立地选自0.01通过使用10作为前体化合物,即 涂有至少一个半导电金属氧化物的基板,获得通过该方法,使用该基板的电子部件,以及用于产生电中性的方法[(OH)由氧化锌或者与氨,X氢氧化锌得到的(NH 3) YZN】Z,其中x,y和z独立地是从0.01到10,由氧化锌和/或氢氧化锌与氨反应。