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1. 发明申请

WO2009013291A2 FIELD EFFECT ELEMENTS 审中-公开
标题翻译：场效应元素
公开(公告)号：WO2009013291A2
公开(公告)日：2009-01-29
申请号：PCT/EP2008/059598
申请日：2008-07-22
申请人： BASF SE , HENNIG, Ingolf , DÖTZ, Florian , ECKERLE, Peter , PARASHKOV, Radoslav , KASTLER, Marcel , VAIDYANATHAN, Subramanian
发明人： HENNIG, Ingolf , DÖTZ, Florian , ECKERLE, Peter , PARASHKOV, Radoslav , KASTLER, Marcel , VAIDYANATHAN, Subramanian
IPC分类号： H01L51/30
CPC分类号： H01L51/052 , H01L51/0529
摘要： A field effect element comprising: a source electrode (6) and a drain-electrode (7), a semiconducting layer (2) comprising a semiconducting compound being in contact with the source electrode (6) and the drain electrode (7), - a gate electrode (5), and a dielectric layer (3) comprising one or more compounds selected from hygroscopic organic compounds and/or from nanoparticulate inorganic compounds being arranged between the semiconducting layer (2) and the gate electrode (5), wherein said hygroscopic organic compounds have a water absorption capability of more than 1.2 % by weight, and a hydrophobic insulating layer (4) being arranged between the gate electrode (5) and the dielectric layer (3) preventing diffusion of water into the one or more hygroscopic compounds of the dielectric layer during the time of use of the field effect element, said hydrophobic insulating layer (4) having a water absorption capability of less than 1.2 % by weight, the semiconducting layer (2), the dielectric layer (3) or the hydrophobic insulating layer (4), or a combination thereof, being disposable from a liquid; and a process for producting the same.
摘要翻译：一种场效应元件，包括：源极（6）和漏电极（7）;包含与源电极（6）和漏电极（7）接触的半导体化合物的半导体层（2）栅电极（5）和包含一种或多种选自吸湿有机化合物和/或从纳米颗粒无机化合物组成的化合物的电介质层（3），其布置在半导电层（2）和栅电极（5）之间，其中所述吸湿性有机化合物具有大于1.2重量％的吸水能力，并且在栅电极（5）和电介质层（3）之间布置疏水绝缘层（4），防止水扩散到一个或多个吸湿性在场效应元件使用期间介电层的化合物，所述疏水绝缘层（4）的吸水能力小于1.2％（重量），半导体层（2），介电层 c层（3）或疏水绝缘层（4），或其组合，其是从液体中一次性的; 以及产品的制造过程。

2. 发明申请

WO2009098254A1 SEMICONDUCTOR MATERIALS PREPARED FROM RYLENE-(π-ACCEPTOR) COPOLYMERS 审中-公开
标题翻译：由RYLENE（对接受体）共聚物制备的半导体材料
公开(公告)号：WO2009098254A1
公开(公告)日：2009-08-13
申请号：PCT/EP2009/051315
申请日：2009-02-05
申请人： BASF SE , POLYERA CORPORATION , FACCHETTI, Antonio , CHEN, Zhihua , YAN, He , LU, Shaofeng , MARKS, Tobin J. , ZHENG, Yan , KASTLER, Marcel , VAIDYANATHAN, Subramanian , DÖTZ, Florian , KOEHLER, Silke
发明人： FACCHETTI, Antonio , CHEN, Zhihua , YAN, He , LU, Shaofeng , MARKS, Tobin J. , ZHENG, Yan , KASTLER, Marcel , VAIDYANATHAN, Subramanian , DÖTZ, Florian , KOEHLER, Silke
IPC分类号： C08G61/12 , H01L51/00 , H01L51/05 , H01B1/12
CPC分类号： H01L51/0043 , C08G61/10 , C08G61/12 , C09B5/62 , C09B69/102 , C09B69/105 , C09B69/106 , C09K11/06 , C09K2211/1458 , C09K2211/1483 , H01B1/127 , H01L51/0036 , H01L51/0053 , H01L51/0094 , H01L51/0541 , H01L51/0545 , H05B33/14 , Y02E10/549 , Y02P70/521
摘要： Disclosed are new semiconductor materials prepared from rylene-(π-acceptor) copolymers. Such copolymers can exhibit high n-type carrier mobility and/or good current modulation characteristics. In addition, the polymers of the present teachings can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.
摘要翻译：公开了由二烯（对 - 受体）共聚物制备的新的半导体材料。这种共聚物可表现出高的n型载流子迁移率和/或良好的电流调制特性。此外，本教导的聚合物可以具有某些加工优点，例如在环境条件下的溶液加工性和/或良好的稳定性。

3. 发明申请

WO2010079064A3 SEMICONDUCTOR MATERIALS PREPARED FROM DITHIENYLVINYLENE COPOLYMERS 审中-公开
公开(公告)号：WO2010079064A3
公开(公告)日：2010-07-15
申请号：PCT/EP2009/067330
申请日：2009-12-16
申请人： BASF SE , POLYERA CORPORATION , MISHRA, Ashok Kumar , VAIDYANATHAN, Subramanian , NOGUCHI, Hiroyoshi , DÖTZ, Florian , KOEHLER, Silke , KASTLER, Marcel
发明人： MISHRA, Ashok Kumar , VAIDYANATHAN, Subramanian , NOGUCHI, Hiroyoshi , DÖTZ, Florian , KOEHLER, Silke , KASTLER, Marcel
IPC分类号： C08G61/12 , C09K11/06 , H01B1/12 , H01L51/50 , H01L51/00 , H01L51/42 , H01L51/05
摘要： Disclosed are new semiconductor materials prepared from dithienylvinylene copolymers with aromatic or heteroaromatic π-conjugated systems. Such copolymers, with little or no post-deposition heat treatment, can exhibit high charge carrier mobility and/or good current modulation characteristics. In addition, the polymers of the present teachings can possess certain processing advantages such as improved solution- processability and low annealing temperature.

4. 发明申请

WO2009016107A1 METHOD FOR DEPOSITING A SEMICONDUCTING LAYER FROM A LIQUID 审中-公开
标题翻译：从液体中沉积半导体层的方法
公开(公告)号：WO2009016107A1
公开(公告)日：2009-02-05
申请号：PCT/EP2008/059767
申请日：2008-07-25
申请人： BASF SE , VAIDYANATHAN, Subramanian , KASTLER, Marcel , DÖTZ, Florian
发明人： VAIDYANATHAN, Subramanian , KASTLER, Marcel , DÖTZ, Florian
IPC分类号： H01L51/05
CPC分类号： H01L51/0003 , H01L51/0068 , H01L51/0541
摘要： A method for depositing a semiconducting layer comprising: a) providing a substrate having a surface; b) providing a mixture comprising one or more semiconducting compounds and one or more polymeric insulating compounds in a liquid; c) bringing at least part of the surface into contact with the mixture; d) moving a zone of the mixture being in contact with the surface along the surface in a moving direction, said zone providing a concentration gradient in the moving direction by evaporating at least part of the solvent; and e) if necessary, removing the non-evaporated part of the solvent.
摘要翻译：一种用于沉积半导体层的方法，包括：a）提供具有表面的衬底; b）在液体中提供包含一种或多种半导体化合物和一种或多种聚合物绝缘化合物的混合物; c）使至少部分表面与混合物接触; d）沿着移动方向沿着表面移动与表面接触的混合物的区域，所述区域通过蒸发至少一部分溶剂而在移动方向上提供浓度梯度; 和e）如果需要，除去未蒸发的溶剂部分。

5. 发明申请

WO2009098252A1 PERYLENE SEMICONDUCTORS AND METHODS OF PREPARATION AND USE THEREOF 审中-公开
标题翻译： PERYLENE SEMICONDUCTORS及其制备和使用方法
公开(公告)号：WO2009098252A1
公开(公告)日：2009-08-13
申请号：PCT/EP2009/051313
申请日：2009-02-05
申请人： BASF SE , POLYERA CORPORATION , KASTLER, Marcel , VAIDYANATHAN, Subramanian , DÖTZ, Florian , KOEHLER, Silke , YAN, He , FACCHETTI, Antonio , LU, Shaofeng , ZHENG, Yan
发明人： KASTLER, Marcel , VAIDYANATHAN, Subramanian , DÖTZ, Florian , KOEHLER, Silke , YAN, He , FACCHETTI, Antonio , LU, Shaofeng , ZHENG, Yan
IPC分类号： H01L51/30 , C07D471/06
CPC分类号： C07D471/06 , C09B5/62 , H01L51/0053 , H01L51/0541 , H01L51/0545 , H01L51/42 , Y02E10/549 , Y02P70/521
摘要： The present teachings provide semiconducting compounds, materials prepared from such compounds, methods of preparing such compounds and semiconductor materials, as well as various compositions, composites, and devices that incorporate the compounds and semiconductor materials. Specifically, compounds of the present teachings can have higher electron-transport efficiency and higher solubility in common solvents compared to related representative compounds.
摘要翻译：本发明提供半导体化合物，由这些化合物制备的材料，制备这种化合物和半导体材料的方法，以及掺入化合物和半导体材料的各种组合物，复合材料和器件。具体而言，与相关的代表性化合物相比，本发明的化合物可具有较高的电子传输效率和较高的溶解度。

6. 发明申请

WO2012146506A1 SEMICONDUCTOR MATERIALS BASED ON THIENOTHIOPHENE-2,5-DIONE OLIGOMERS AND POLYMERS 审中-公开
标题翻译：基于噻吩基-2,5-二醇低聚物和聚合物的半导体材料
公开(公告)号：WO2012146506A1
公开(公告)日：2012-11-01
申请号：PCT/EP2012/056957
申请日：2012-04-17
申请人： BASF SE , MISHRA, Ashok Kumar , VAIDYANATHAN, Subramanian , NOGUCHI, Hiroyoshi , DÖTZ, Florian , ZHU, Bo
发明人： MISHRA, Ashok Kumar , VAIDYANATHAN, Subramanian , NOGUCHI, Hiroyoshi , DÖTZ, Florian , ZHU, Bo
IPC分类号： C08G61/12
CPC分类号： H01L51/0036 , C08G61/126 , C08G2261/124 , C08G2261/1412 , C08G2261/3223 , C08G2261/334 , C08G2261/364 , C08G2261/414 , C08G2261/51 , C08G2261/91 , C08G2261/92 , H01L51/0043 , H01L51/0541 , Y02E10/549
摘要： The present invention provides a polymer comprising a unit of formula (1), and an electronic device comprising the polymer as semiconducting material.
摘要翻译：本发明提供包含式（1）单元的聚合物和包含聚合物作为半导体材料的电子器件。

7. 发明申请

WO2010149451A1 FUSED BITHIOPHENE-VINYLENE POLYMERS 审中-公开
标题翻译：熔融二苯乙烯 - 乙烯聚合物
公开(公告)号：WO2010149451A1
公开(公告)日：2010-12-29
申请号：PCT/EP2010/057225
申请日：2010-05-26
申请人： BASF SE , POLYERA CORPORATION , MISHRA, Ashoki Kumar , VAIDYANATHAN, Subramanian , NOGUCHI, Hiroyoshi , DOETZ, Florian , KOEHLER, Silke Annika , KASTLER, Marcel
发明人： MISHRA, Ashoki Kumar , VAIDYANATHAN, Subramanian , NOGUCHI, Hiroyoshi , DOETZ, Florian , KOEHLER, Silke Annika , KASTLER, Marcel
IPC分类号： C08G61/12 , H01L51/00 , C08F301/00
CPC分类号： H01L51/0036 , C08G61/123 , C08G61/126 , C08G2261/3247 , C08G2261/344 , C08G2261/414 , H01L51/0035 , H01L51/0043 , H01L51/0541 , H01L51/0545 , Y02E10/549
摘要： A polymer comprising repeating units A and optionally repeating units B wherein Z = S, Se, N-R and O; W is at each occurrence independently a monocyclic or polycylic moiety optionally substituted with 1 - 4 R a groups; Y,at each occurrence, is independently a divalent C 1-6 alkyl group, a divalent C 1-6 haloalkyl group, or a covalent bond; c is from 1 to 6.
摘要翻译：包含重复单元A和任选的重复单元B的聚合物，其中Z = S，Se，N-R和O; W在每次出现时独立地为任选被1-4个R a基团取代的单环或多环基团; Y在每次出现时独立地为二价C 1-6烷基，二价C 1-6卤代烷基或共价键; c为1〜6。

8. 发明申请

WO2013004730A1 DITHIENOPHTHALIMIDE SEMICONDUCTOR POLYMERS 审中-公开
标题翻译：二苯基二胺半导体聚合物
公开(公告)号：WO2013004730A1
公开(公告)日：2013-01-10
申请号：PCT/EP2012/062996
申请日：2012-07-04
申请人： BASF SE , NOGUCHI, Hiroyoshi , DÖTZ, Florian , MISHRA, Ashok, Kumar , VAIDYANATHAN, Subramanian , MINH-TIEN, Mai
发明人： NOGUCHI, Hiroyoshi , DÖTZ, Florian , MISHRA, Ashok, Kumar , VAIDYANATHAN, Subramanian , MINH-TIEN, Mai
IPC分类号： C08G61/12 , C09K11/00 , H01B1/00 , H01L51/00
CPC分类号： H01L51/0036 , C08G61/126 , C08G2261/124 , C08G2261/1412 , C08G2261/3223 , C08G2261/3327 , C08G2261/344 , C08G2261/364 , C08G2261/92 , H01L51/0043 , H01L51/0558 , Y02E10/549
摘要： The invention concerns apolymer of the formula (I): wherein: M1 is an optionally substituted dithienophthalimide formula (II): wherein: X is N or C-R, wherein R is H or a C 1 -C 40 alkyl group, R 1 , at each occurrence, is independently selected from H, a C 1-40 alkyl group, a C 2-40 alkenyl group, a C 1-40 haloalkyl group, and a monocyclicor polycyclic moiety, wherein: each of the C 1-40 alkyl group, the C 2-40 alkenyl group, and the C 1-40 haloalkyl group can be optionally substituted with 1-10 substituents independently selected from a halogen, CN, -NO 2 , OH, NH 2 , -NH(C 1-20 alkyl), N(C 1-20 alkyl) 2 , -S(O) 2 OH, -CHO, -C(O)-C 1-20 alkyl, -C(O)OH, -C(O)-OC 1-20 alkyl, -C(O)NH 2 , -C(O)NH-C 1-20 alkyl, -C(O)N(C 1-20 alkyl) 2 , -OC 1-20 alkyl, -SiH 3 , -SiH(C 1-20 alkyl) 2 , -SiH 2 (C 1-20 alkyl), and -Si(C 1-20 alkyl) 3 ; and the monocyclic or polycyclic moiety can be covalently bonded to the imide nitrogen via an optional linker, and can be optionally substituted with 1-5 substituentsindependently selected from a halogen, oxo, -CN, -NO 2 , OH, =C(CN) 2 , -NH 2 , -NH(C 1-20 alkyl), N(C 1-20 alkyl) 2 , -S(O) 2 OH,-CHO, -C(O)OH, -C(O)-C 1-20 alkyl, -C(O)-OC 1-20 alkyl, -C(O)NH 2 , -C(O)NH-C 1-20 alkyl, -C(O)N(C 1-20 alkyl) 2 , -SiH 3 , -SiH(C 1-20 alkyl) 2 , -SiH 2 (C 1-20 alkyl), -Si(C 1-20 alkyl) 3 ,-O-C 1-20 alkyl, -O-C 1-20 alkenyl, -O-C 1-20 haloalkyl, C 1-20 alkyl, C 1-20 alkenyl, C 1-20 haloalkyl, C 7-20 arylalkyl, C 6-20 aryloxy and C 7-20 arylcarbonyl. M 2 is a repeating unit comprising one or more cyclic moieties; and n is an integer between 2 and 5,000.
摘要翻译：本发明涉及式（I）的聚合物：其中：M1是任选取代的二噻吩邻苯二甲酰亚胺式（II）：其中：X是N或CR，其中R是H或C 1 -C 40烷基，独立地选自H，C 1-4烷基，C 2-40链烯基，C 1-40卤代烷基和单环多环部分，其中：C 1-4烷基，C 2-40链烯基，C 1-4卤代烷基可以任选地被1-10个独立地选自卤素，CN，-NO 2，OH，NH 2，-NH（C 1-20烷基），N（C 1-20烷基） -S（O）2 OH，-CHO，-C（O）-C 1-20烷基，-C（O）OH，-C（O）-OC 1-20烷基，-C（O）NH 2，-C ）NH-C 1-20烷基，-C（O）N（C 1-20烷基）2，-OC 1-20烷基，-SiH 3，-SiH（C 1-20烷基）2，-SiH 2（C 1-20烷基）和-Si（C 1-20烷基）3; 并且单环或多环部分可以经由任选的接头共价键合到酰亚胺氮上，并且可以任选被1-5个取代基取代，所述取代基独立地选自卤素，氧代，-CN，-NO 2，OH，= C（CN）2 ，-NH 2，-NH（C 1-20烷基），N（C 1-20烷基）2，-S（O）2 OH，-CHO，-C（O）OH，-C（O） -C（O）-OC 1-20烷基，-C（O）NH 2，-C（O）NH-C 1-20烷基，-C（O）N（C 1-20烷基）2，-SiH 3，-SiH C 1-20烷基）2，-SiH 2（C 1-20烷基），-Si（C 1-20烷基）3，-O-C 1-20烷基，-O-C 1-20烯基，-O-C 1-20卤代烷基， C 1-20烷基，C 1-20烯基，C 1-20卤代烷基，C 7-20芳基烷基，C 6-20芳氧基和C 7-20芳基羰基。 M2是包含一个或多个环状部分的重复单元; n为2〜5,000的整数。

9. 发明申请

WO2012146574A1 SEMICONDUCTOR MATERIALS BASED ON DIKETOPIPERIDINOPIPERIDINE COPOLYMERS 审中-公开
标题翻译：基于二酮磷酸双膦酸共聚物的半导体材料
公开(公告)号：WO2012146574A1
公开(公告)日：2012-11-01
申请号：PCT/EP2012/057438
申请日：2012-04-24
申请人： BASF SE , MISHRA, Ashok Kumar , VAIDYANATHAN, Subramanian , NOGUCHI, Hiroyoshi , DÖTZ, Florian , GUAN, Yucui
发明人： MISHRA, Ashok Kumar , VAIDYANATHAN, Subramanian , NOGUCHI, Hiroyoshi , DÖTZ, Florian , GUAN, Yucui
IPC分类号： C08G61/12
CPC分类号： C08G61/126 , C08G2261/124 , C08G2261/1412 , C08G2261/3223 , C08G2261/3243 , C08G2261/344 , C08G2261/414 , C08G2261/91 , C08G2261/92 , C09B57/00 , C09B69/109 , H01L51/0558
摘要： The present invention provides a polymer comprising a unit of formula (1) and an electronic device comprising the polymer as semiconducting material.
摘要翻译：本发明提供包含式（1）单元的聚合物和包含聚合物作为半导体材料的电子器件。

10. 发明申请

WO2012016925A3 SEMICONDUCTOR MATERIALS PREPARED FROM BRIDGED BITHIAZOLE COPOLYMERS 审中-公开
公开(公告)号：WO2012016925A3
公开(公告)日：2012-02-09
申请号：PCT/EP2011/063109
申请日：2011-07-29
申请人： BASF SE , POLYERA CORPORATION , MISHRA, Ashok Kumar , VAIDYANATHAN, Subramanian , NOGUCHI, Hiroyoshi , DÖTZ, Florian , ZHU, Bo , BASUKI, Johan Sebastian
发明人： MISHRA, Ashok Kumar , VAIDYANATHAN, Subramanian , NOGUCHI, Hiroyoshi , DÖTZ, Florian , ZHU, Bo , BASUKI, Johan Sebastian
IPC分类号： C07D513/04 , C08G61/12 , H01L51/05 , H01L51/00
摘要： The present invention provides semiconducting compounds, oligomers and polymers of formula wherein A 1 and A 2 can be the same or different and are S or Se, E is selected from the group consisting of The compounds, oligomers and polymers of formula of formula (1) are suitable for use in electronic devices such as organic field effect transistors.

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