专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2005017983A2 PLASMA ASHING PROCESS 审中-公开
标题翻译：等离子流程
公开(公告)号：WO2005017983A2
公开(公告)日：2005-02-24
申请号：PCT/US2004/025962
申请日：2004-08-11
申请人： AXCELIS TECHNOLOGIES INC. , WALDFRIED, Carlo , ESCORCIA, Orlando , HAN, Qingyuan , BUCKLEY, Thomas , SAKTHIVEL, Palanikumaran
发明人： WALDFRIED, Carlo , ESCORCIA, Orlando , HAN, Qingyuan , BUCKLEY, Thomas , SAKTHIVEL, Palanikumaran
IPC分类号： H01L21/00
CPC分类号： H01L21/02071 , G03F7/427 , H01J2237/3342 , H01L21/31138
摘要： A substantially oxygen-free and nitrogen-free plasma ashing process for removing photoresist in the presence of a low k material from a semiconductor substrate includes forming reactive species by exposing a plasma gas composition to an energy source to form plasma. The plasma gas composition is substantially free from oxygen-bearing and nitrogen-bearing gases. The plasma selectively removes the photoresist from the underlying substrate containing low k material by exposing the photoresist to substantially oxygen and nitrogen free reactive species. The process can be used with carbon containing low k dielectric materials.
摘要翻译：在半导体衬底存在低k材料的情况下，基本上无氧的无氮等离子体灰化处理用于去除光致抗蚀剂包括通过将等离子体气体组合物暴露于能量源形成等离子体来形成反应性物质。等离子体气体组成基本上不含氧气和含氮气体。通过将光致抗蚀剂暴露于基本上无氧和无氮的反应性物质，等离子体通过含有低k材料的下面的基底选择性地除去光致抗蚀剂。该方法可与含碳低k电介质材料一起使用。

2. 发明申请

WO2005010971A2 ULTAVIOLET CURING PROCESSES FOR ADVANCED LOW-K MATERIALS 审中-公开
标题翻译：用于先进低K材料的ULTAVIOLET固化工艺
公开(公告)号：WO2005010971A2
公开(公告)日：2005-02-03
申请号：PCT/US2004/017838
申请日：2004-06-07
申请人： AXCELIS TECHNOLOGIES, INC. , WALDFRIED, Carlo , HAN, Qingyuan , ESCORCIA, Orlando , BERRY, III, Ivan, L.
发明人： WALDFRIED, Carlo , HAN, Qingyuan , ESCORCIA, Orlando , BERRY, III, Ivan, L.
IPC分类号： H01L21/312
CPC分类号： C09D183/02 , C09D183/04 , C23C16/56 , H01L21/02126 , H01L21/02337 , H01L21/0234 , H01L21/02348 , H01L21/3105 , H01L21/3121 , H01L21/3122 , H01L21/31695
摘要： Low dielectric constant materials with improved elastic modulus and material hardness. The process of making such materials involves providing a dielectric material and ultraviolet (UV) curing the material to produce a UV cured dielectric material. UV curing yields a material with improved modulus and material hardness. The improvement is each typically greater than or about 50 %. The UV cured dielectric material can optionally be post-UV treated. The post-UV treatment reduces the dielectric constant of the material while maintaining an improved elastic modulus and material hardness as compared to the LIV cured dielectric material. UV cured dielectrics can additionally exhibit a lower total thermal budget for curing than for furnace curing processes.
摘要翻译：低介电常数材料具有改进的弹性模量和材料硬度。制造这种材料的过程涉及提供介电材料并紫外（UV）固化该材料以产生UV固化的介电材料。 UV固化产生具有改进的模量和材料硬度的材料。每种改进通常大于或大约50％。 UV固化的电介质材料可以任选地进行UV后处理。与LIV固化的介电材料相比，UV后处理降低了材料的介电常数，同时保持了改进的弹性模量和材料硬度。紫外线固化电介质还可以显示出比固化炉工艺更低的总固化热预算。

3. 发明申请

WO2004066374A1 FLUORINE-FREE PLASMA CURING PROCESS FOR POROUS LOW-K-MATERIALS 审中-公开
标题翻译：无氟等离子体固化方法用于多孔低K材料
公开(公告)号：WO2004066374A1
公开(公告)日：2004-08-05
申请号：PCT/US2004/001178
申请日：2004-01-16
申请人： AXCELIS TECHNOLOGIES, INC. , JSR CORPORATION , WALDFRIED, Carlo , HAN, Qingyuan , ESCORCIA, Orlando , ALBANO, Ralph , BERRY, Ivan, L, III , SHIOTA, Atsushi
发明人： WALDFRIED, Carlo , HAN, Qingyuan , ESCORCIA, Orlando , ALBANO, Ralph , BERRY, Ivan, L, III , SHIOTA, Atsushi
IPC分类号： H01L21/3065
CPC分类号： H01L21/3105 , C01B33/126 , C23C16/56 , H01B3/46 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/0234 , H01L21/31116 , H01L21/31138 , H01L21/3124 , H01L21/31695 , Y10T428/31663
摘要： Low dielectric constant porous materials with improved elastic modulus and material hardness. The process of making such porous materials involves providing a porous dielectric material and plasma curing the porous dielectric material with a fluorine-free plasma gas to produce a fluorine-free plasma cured porous dielectric material. Fluorine-free plasma curing of the porous dielectric material yields a material with improved modulus and material hardness, and with comparable dielectric constant. The improvement in elastic modulus is typically greater than or about 50%.
摘要翻译：低介电常数多孔材料具有改善的弹性模量和材料硬度。制造这种多孔材料的过程包括提供多孔电介质材料，并用无氟等离子体气体等离子体固化多孔介电材料，以产生无氟等离子体固化的多孔电介质材料。多孔电介质材料的无氟等离子体固化产生具有改善的模量和材料硬度以及相当的介电常数的材料。弹性模量的改善通常大于或约50％。

4. 发明申请

WO2006135369A1 ULTRAVIOLET ASSISTED PROPGEN REMOVAL AND/OR CURING PROCESSES FOR FORMING POROUS LOW K DIELECTRICS 审中-公开
标题翻译：用于形成多孔低K电介质的ULTRAVIOLET辅助的去除和/或固化方法
公开(公告)号：WO2006135369A1
公开(公告)日：2006-12-21
申请号：PCT/US2005/020862
申请日：2005-06-10
申请人： AXCELIS TECHNOLOGIES, INC. , WALDFRIED, Carlo , HAN, Qingyuan , ESCORCIA, Orlando , BERRY, Ivan
发明人： WALDFRIED, Carlo , HAN, Qingyuan , ESCORCIA, Orlando , BERRY, Ivan
IPC分类号： H01L21/316
CPC分类号： H01L21/31695 , H01L21/02126 , H01L21/02203 , H01L21/02271 , H01L21/02348 , H01L21/7682 , H01L21/76825 , H01L2221/1047
摘要： Processes for forming porous low k dielectric materials from low k dielectric films containing a porogen material include exposing the low k dielectric film to ultraviolet radiation. In one embodiment, the film is exposed to broadband ultraviolet radiation of less than 240 nm for a period of time and intensity effective to remove the porogen material. In other embodiments, the low k dielectric film is exposed to a first ultraviolet radiation pattern effective to increase a crosslinking density of the film matrix while maintaining a concentration of the porogen material substantially the same before and after exposure to the first ultraviolet radiation pattern. The low k dielectric film can be then be processed to form a metal interconnect structure therein and subsequently exposed to a second ultraviolet radiation pattern effective to remove the porogen material from the low k dielectrics film and form a porous low k dielectric film.
摘要翻译：从含有致孔剂材料的低k电介质膜形成多孔低k电介质材料的方法包括将低k电介质膜暴露于紫外线辐射。在一个实施方案中，将薄膜暴露于小于240nm的宽带紫外线辐射一段时间和强度以有效去除致孔剂材料。在其他实施例中，低k电介质膜暴露于有效地增加膜基质的交联密度的第一紫外线辐射图，同时在暴露于第一紫外线辐射图之前和之后保持致孔剂材料的浓度基本相同。然后可以处理低k电介质膜以在其中形成金属互连结构，随后暴露于有效从低k电介质膜去除致孔剂材料并形成多孔低k电介质膜的第二紫外线图案。

5. 发明申请

WO2002093634A1 PLASMA ASHING PROCESS 审中-公开
标题翻译：等离子流程
公开(公告)号：WO2002093634A1
公开(公告)日：2002-11-21
申请号：PCT/US2002/015165
申请日：2002-05-14
申请人： AXCELIS TECHNOLOGIES, INC.
发明人： WALDFRIED, Carlo , BERRY, Ivan , ESCORCIA, Orlando , HAN, Qingyuan , SAKTHIVEL, Palani
IPC分类号： H01L21/311
CPC分类号： H01L21/02071 , H01J2237/3342 , H01L21/31138
摘要： A plasma ashing process and apparatus for selectively ashing photoresist and/or post etch residues from a semiconductor substrate includes generating a reduced ion density plasma in a plasma generation region at a pressure of at least 2 torr greater than the processing chamber pressure; and exposing the wafer surface having the photoresist and/or post etch residues thereon to the reduced ion density plasma to selectively remove the photoresist and/or post etch residues from the surface and leave the surface substantially the same as before exposing the substrate to the reduced ion density plasma.
摘要翻译：用于从半导体衬底选择性地灰化光致抗蚀剂和/或后蚀刻残余物的等离子体灰化处理和装置包括在比处理室压力大至少2乇的压力下在等离子体产生区域中产生还原离子密度等离子体; 并将其上具有光致抗蚀剂和/或后蚀刻残余物的晶片表面暴露于还原离子密度等离子体，以从表面选择性地去除光致抗蚀剂和/或后蚀刻残留物，并使表面基本上与将底物暴露于还原离子密度等离子体。

6. 发明申请

WO2003010799A3 PLASMA ASHING PROCESS 审中-公开
公开(公告)号：WO2003010799A3
公开(公告)日：2003-02-06
申请号：PCT/US2002/023344
申请日：2002-07-22
申请人： AXCELIS TECHNOLOGIES, INC.
发明人： HAN, Qingyuan , BERRY, Ivan , SAKTHIVEL, Palani , WALDFRIED, Carlo
IPC分类号： H01L21/311
摘要： A plasma ashing process and apparatus for selectively ashing photoresist and/or post etch residues from a semiconductor substrate includes generating a reduced ion density plasma in a plasma generation region at a pressure of at least 2 torr greater than the processing chamber pressure; and exposing the wafer surface having the photoresist and/or post etch residues thereon to the reduced ion density plasma to selectively remove the photoresist and /or post etch residues from the surface and leave the surface substantially the same as before exposing the substrate to the reduced ion density plasma.

7. 发明申请

WO2004049073A2 DRYING PROCESS FOR LOW-K DIELECTRIC FILMS 审中-公开
标题翻译：低K电介质膜的干燥过程
公开(公告)号：WO2004049073A2
公开(公告)日：2004-06-10
申请号：PCT/US2003/038019
申请日：2003-11-26
申请人： AXCELIS TECHNOLOGIES INC.
发明人： WALDFRIED, Carlo , HAN, Qingyuan , HALLOCK, John , BERRY, Ivan , MARGOLIS, Ari , ESCORCIA, Orlando
IPC分类号： G03F7/42
CPC分类号： H01L21/31058 , G03F7/42 , H01L21/3105 , H01L21/31111 , H01L21/31116
摘要： A method for drying and removing contaminants from a low-k dielectric film of an integrated circuit wafer, the method comprising exposing the low k dielectric layer to photons; and simultaneously with, prior to, or subsequent to the photon exposure, exposing the substrate to a process effective to remove the contaminants without causing degradation of the low k dielectric layer, wherein the process is selected from the group consisting of a heat process, a vacuum process, an oxygen free plasma process, and combinations thereof.
摘要翻译：一种用于从集成电路晶片的低k电介质膜中干燥和去除污染物的方法，所述方法包括：将所述低k电介质层暴露于光子; 并且在光子暴露的同时，之前或之后，将衬底暴露于有效去除污染物的过程而不会引起低k电介质层的劣化，其中所述过程选自由加热工艺，真空处理，无氧等离子处理，以及它们的组合。

8. 发明申请

WO2003025994A1 ULTRAVIOLET CURING PROCESS FOR POROUS LOW-K MATERIALS 审中-公开
标题翻译：用于多孔低K材料的超紫外线固化方法
公开(公告)号：WO2003025994A1
公开(公告)日：2003-03-27
申请号：PCT/US2002/029173
申请日：2002-09-13
申请人： AXCELIS TECHNOLOGIES, INC.
发明人： ALBANO, Ralph , BARGERON, Cory , BERRY, Ivan , BREMMER, Jeff , ESCORCIA, Orlando , HAN, Qingyuan , MARGOLIS, Ari , WALDFRIED, Carlo
IPC分类号： H01L21/316
CPC分类号： H01L21/02126 , C09D183/02 , C09D183/04 , H01L21/0234 , H01L21/02348 , H01L21/3121 , H01L21/3122 , H01L21/31695
摘要： Low dielectric constant porous materials with improved elastic modulus. The process of making such porous materials involves providing a porous dielectric material and ultraviolet (UV) curing of the porous dielectric material to produce a UV cured porous dielectric material. UV curing of the porous dielectric material yields a material with improved modulus and comparable dielectric constant. The improvement in elastic modulus is typically greater than about 50%. The porous dielectric material is UV cured for no more than about 300 seconds at a temperature less than about 450°C. The UV cured porous dielectric material can optionally be post-UV treated. Rapid Anneal Processing (RAP) of the UV cured porous dielectric material reduces the dielectric constant of the material while maintaining an improved elastic modulus as compared to the UV cured porous dielectric material. The annealing temperature is typically less than about 450°C, and the annealing time is typically less than about 60 minutes. The post-UV treated, UV cured porous dielectric material has a dielectric constant between about 1.1 and about 3.5 and an improved elastic modulus.
摘要翻译：具有改善弹性模量的低介电常数多孔材料。制造这种多孔材料的过程包括提供多孔电介质材料和多孔介电材料的紫外线（UV）固化以产生UV固化的多孔介电材料。多孔介电材料的UV固化产生具有改进的模量和相当的介电常数的材料。弹性模量的改善通常大于约50％。多孔绝缘材料在小于约450℃的温度下UV固化不超过约300秒。UV固化的多孔电介质材料可以任选地进行后UV处理。与UV固化的多孔介电材料相比，UV固化的多孔电介质材料的快速退火处理（RAP）降低了材料的介电常数，同时保持了改进的弹性模量。退火温度通常小于约450℃，退火时间通常小于约60分钟。后UV处理的UV固化多孔电介质材料的介电常数在约1.1和约3.5之间，并且具有改善的弹性模量。

9. 发明申请

WO2003015150A1 PLASMA CURING OF MSQ-BASED POROUS LOW-K FILM MATERIALS 审中-公开
标题翻译：基于MSQ的多孔低K薄膜材料的等离子体固化
公开(公告)号：WO2003015150A1
公开(公告)日：2003-02-20
申请号：PCT/US2002/022213
申请日：2002-07-15
申请人： AXCELIS TECHNOLOGIES, INC. , CHEMAT TECHNOLOGY, INC.
发明人： HAN, Qingyuan , WALDFRIED, Carlo , ESCORCIA, Orlando , ALBANO, Ralph , BERRY, Ivan, L., III , JANG, Jeff , BALL, Ian
IPC分类号： H01L21/312
CPC分类号： C01B33/126 , H01L21/02137 , H01L21/02203 , H01L21/02282 , H01L21/0234 , H01L21/31058 , H01L21/3122 , H01L21/31695
摘要： Low dielectric constant film materials with improved elastic modulus. The method of making such film materials involves providing a porous methyl silsesquioxane based dielectric film material produced from a resin containing at least 2 Si-CH 3 groups and plasma curing the porous film material to convert the film into porous silica. Plasma curing of the porous film material yields a film with improved modulus and outgassing properties. The improvements in elastic modulus is typically greater than or about 100 %, and more typically greater than or about 200 %. The film is plasma cured for between about 15 and about 120 seconds at a temperature less than or about 350 °C. The plasma cured porous film material can optionally be annealed. The annealing of the plasma cured film may reduce the dielectric constant of the film while maintaining an improved elastic modulus as compared to the plasma cured porous film material. The annealing temperature is typically less than or about 450 °C. The annealed, plasma cured film has a dielectric constant in the range of from about 1.1 to about 2.4 and an improved elastic modulus.
摘要翻译：具有改善弹性模量的低介电常数薄膜材料。制造这种膜材料的方法包括提供由含有至少2个Si-CH 3基团的树脂制备的多孔甲基倍半硅氧烷基电介质膜材料和等离子体固化多孔膜材料以将膜转化为多孔二氧化硅。多孔膜材料的等离子体固化产生具有改进的模量和除气性质的膜。弹性模量的改善通常大于或约100％，更典型地大于或约200％。该膜在小于或约350℃的温度下等离子体固化约15至约120秒。等离子体固化的多孔膜材料可任选地退火。与等离子体固化的多孔膜材料相比，等离子体固化膜的退火可以降低膜的介电常数，同时保持改善的弹性模量。退火温度通常小于或约450℃。退火的等离子体固化膜具有约1.1至约2.4的介电常数和改进的弹性模量。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式