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1. 发明申请

WO2014110292A1 SYSTEMS AND METHODS FOR THERMALLY MANAGING HIGH-TEMPERATURE PROCESSES ON TEMPERATURE SENSITIVE SUBSTRATES 审中-公开
标题翻译：温度敏感基板高温处理的系统与方法
公开(公告)号：WO2014110292A1
公开(公告)日：2014-07-17
申请号：PCT/US2014/010931
申请日：2014-01-09
申请人： ASCENT SOLAR TECHNOLOGIES, INC.
发明人： WOODS, Lawrence, M. , RIBELIN, Rosine , ARMSTRONG, Joseph, H.
IPC分类号： H01L31/18 , H01L31/04
CPC分类号： H01L31/18 , C23C14/0021 , C23C14/20 , C23C14/541 , H01L21/02422 , H01L21/02568 , H01L21/67115 , H01L31/0322 , H01L31/03928 , Y02E10/541
摘要： A method for depositing one or more thin-film layers on a flexible polyimide substrate having opposing front and back outer surfaces includes the following steps: (a) heating the flexible polyimide substrate such that a temperature of the front outer surface of the flexible polyimide substrate is higher than a temperature of the back outer surface of the flexible polyimide substrate, and (b) depositing the one or more thin-film layers on the front outer surface of the flexible polyimide substrate. A deposition zone for executing the method includes (a) one of more physical vapor deposition sources adapted to deposit one or more metallic materials on the front outer surface of the substrate, and (b) one or more radiant zone boundary heaters.
摘要翻译：在具有相对的前后外表面的柔性聚酰亚胺基板上沉积一层或多层薄膜层的方法包括以下步骤：（a）加热柔性聚酰亚胺基板，使得柔性聚酰亚胺基板的前外表面的温度高于柔性聚酰亚胺基板的后外表面的温度，和（b）在柔性聚酰亚胺基板的前外表面上沉积一个或多个薄膜层。用于执行该方法的沉积区包括（a）适于在衬底的前外表面上沉积一种或多种金属材料的更多物理气相沉积源中的一种，和（b）一个或多个辐射区边界加热器。

2. 发明申请

WO2015138728A1 MULTILAYER THIN-FILM BACK CONTACT SYSTEM FOR FLEXIBLE PHOTOVOLTAIC DEVICES ON POLYMER SUBSTRATES 审中-公开
标题翻译：用于聚合物基板上的柔性光电器件的多层薄膜接触系统
公开(公告)号：WO2015138728A1
公开(公告)日：2015-09-17
申请号：PCT/US2015/020184
申请日：2015-03-12
申请人： ASCENT SOLAR TECHNOLOGIES, INC.
发明人： WOODS, Lawrence, M. , STEVENS, Hobart , ARMSTRONG, Joseph, H.
IPC分类号： H01L31/0224 , H01L31/0256 , H01L31/0392 , H01L31/18
CPC分类号： H01L31/03928 , H01L31/022425 , Y02E10/541
摘要： A polymer substrate and back contact structure for a photovoltaic element, and a photovoltaic element include a CIGS photovoltaic structure, a polymer substrate having a device side at which the photovoltaic element can be located and a back side opposite the device side. A layer of dielectric is formed at the back side of the polymer substrate. A metal structure is formed at the device side of the polymer substrate.
摘要翻译：用于光电元件的聚合物基板和背接触结构，以及光电元件包括CIGS光伏结构，具有光电元件可以位于其中的器件侧的聚合物基板和与器件侧相对的背面。在聚合物基材的背面形成介电层。在聚合物基板的器件侧形成金属结构。

3. 发明申请

WO2017079008A1 MULTILAYER THIN-FILM BACK CONTACT SYSTEM FOR FLEXIBLE PHOTOVOLTAIC DEVICES ON POLYMER SUBSTRATES 审中-公开
标题翻译：用于聚合物基底上柔性光伏器件的多层薄膜背接触系统
公开(公告)号：WO2017079008A1
公开(公告)日：2017-05-11
申请号：PCT/US2016/058933
申请日：2016-10-26
申请人： ASCENT SOLAR TECHNOLOGIES, INC.
发明人： WOODS, Lawrence, M. , STEVENS, Hobart , ARMSTRONG, Joseph, H. , TREGLIO, Richard, Thomas
IPC分类号： H01L31/0224 , H01L21/00 , H01L31/0264
CPC分类号： H01L31/0749 , H01L31/022425 , H01L31/03928 , Y02E10/541
摘要： A polymer substrate and back contact structure for a photovoltaic element, and a photovoltaic element include a CIGS photovoltaic structure, a polymer substrate having a device side at which the photovoltaic element can be located and a back side opposite the device side. A layer of dielectric is optionally formed at the back side of the polymer substrate. A metal structure is formed at the device side of the polymer substrate.
摘要翻译：用于光电元件的聚合物基板和背接触结构以及光电元件包括CIGS光伏结构，具有设备侧的聚合物基板，光伏元件可位于该侧上，以及背侧设备端。可选地在聚合物基板的背面形成电介质层。金属结构形成在聚合物衬底的器件侧。

4. 发明申请

WO2012082772A2 APPARATUS AND METHOD FOR HYBRID PHOTOVOLTAIC DEVICE HAVING MULTIPLE, STACKED, HETEROGENEOUS, SEMICONDUCTOR JUNCTIONS 审中-公开
标题翻译：具有多个，堆叠，异质，半导体结的混合光电器件的装置和方法
公开(公告)号：WO2012082772A2
公开(公告)日：2012-06-21
申请号：PCT/US2011/064697
申请日：2011-12-13
申请人： ASCENT SOLAR TECHNOLOGIES, INC. , WOODS, Lawrence, M. , ARMSTRONG, Joseph, H.
发明人： WOODS, Lawrence, M. , ARMSTRONG, Joseph, H.
IPC分类号： H01L31/078
CPC分类号： H01L31/0304 , H01L31/043 , H01L31/0465 , H01L31/065 , H01L31/1896 , H01L2924/0002 , Y02E10/50 , H01L2924/00
摘要： A photovoltaic (PV) device has at least one lower PV cell on a substrate, the cell having a metallic back contact, and a I-III-VI absorber, and a transparent conductor layer. An upper PV cell is adhered to the lower PV cell, electrically in series to form a stack. The upper PV cell has III- V absorber and junction layers, the cells are adhered by transparent conductive adhesive having filler of conductive nanostructures or low temperature solder. The upper PV cell has no substrate. An embodiment has at least one shape of patterned conductor making contact to both a top of the upper and a back contact of the lower cells to couple them together in series. In an embodiment, a shape of patterned conductor draws current from excess area of the lower cell to the upper cell, in an alternative embodiment shapes of patterned conductor couples I-III-VI cells not underlying upper cells in series strings, a string being in parallel with at least one stack. In an embodiment, the bonding agent is a polymeric adhesive containing conductive nanostructures. In an embodiment the III-V absorber is grown on single crystal, substrate. A method for forming the device is described.
摘要翻译：光伏（PV）器件在衬底上具有至少一个下部PV电池，电池具有金属背接触，以及I-III-VI吸收体和透明导体层。上部PV电池被电连接到下部PV电池，以形成堆叠。上部PV电池具有III-V吸收体和接合层，电池通过具有导电纳米结构或低温焊料填料的透明导电粘合剂粘合。上部PV电池没有基板。一个实施例具有图案化导体的至少一种形状，其与下电池的上部和下部接触的顶部接触，以将它们串联在一起。在一个实施例中，图案化导体的形状从下部单元的多余区域吸取电流到上部单元，在替代实施例中，图案化导体的形状将I-III-VI单元不连接在串联串中的上部单元下方，与至少一个堆叠平行。在一个实施方案中，粘合剂是含有导电纳米结构的聚合物粘合剂。在一个实施方案中，III-V吸收剂在单晶衬底上生长。描述了用于形成装置的方法。

5. 发明申请

WO2009012346A1 METHODS FOR FABRICATING P-TYPE CADMIUM SELENIDE 审中-公开
标题翻译：制造P型硒化镉的方法
公开(公告)号：WO2009012346A1
公开(公告)日：2009-01-22
申请号：PCT/US2008/070240
申请日：2008-07-16
申请人： ASCENT SOLAR TECHNOLOGIES, INC. , WOODS, Lawrence, M. , RIBELIN, Rosine, M.
发明人： WOODS, Lawrence, M. , RIBELIN, Rosine, M.
IPC分类号： H01L21/385
CPC分类号： H01L31/18 , H01L21/0256 , H01L21/02579 , H01L21/385 , H01L31/0336 , H01L31/0392 , H01L31/046 , H01L31/0725 , H01L31/073 , H01L31/1828 , H01L31/1884 , Y02E10/543 , Y02P70/521
摘要： A method of making a p-type Cadmium Selenide semiconductor material includes depositing an initial doped Cadmium Selenide layer, using a dopant that includes at least one element selected from the group consisting of Group IIIB elements and Group VIIB elements. The doped layer of Cadmium Selenide is then coated with a solution including a solvent and at least one of the following chlorides: chlorides of Group IA elements, chlorides of group IB elements, and chlorides of Group IIIB elements. The doped layer of Cadmium Selenide is then heated in an environment having an ambient temperature of between 300 and 500 degrees Celsius for a time between three and thirty minutes while at least partially preventing the evaporation of Selenium from the doped layer of Cadmium Selenide.
摘要翻译：制造p型硒化镉半导体材料的方法包括使用掺杂剂来沉积初始掺杂硒化镉层，所述掺杂剂包括选自由IIIB族元素和VIIB族组成的组中的至少一种元素元素。然后用包含溶剂和至少一种下列氯化物的溶液涂覆硒化镉掺杂层：IA族元素的氯化物，IB族元素的氯化物和IIIB族元素的氯化物。然后在环境温度为300-500摄氏度的环境中加热硒化镉掺杂层三至三十分钟的时间，同时至少部分地防止硒从硒化镉掺杂层中蒸发。 p>

6. 发明申请

WO2009012345A2 HYBRID MULTI-JUNCTION PHOTOVOLTAIC CELLS AND ASSOCIATED METHODS 审中-公开
标题翻译：混合多结节光电池及相关方法
公开(公告)号：WO2009012345A2
公开(公告)日：2009-01-22
申请号：PCT/US2008/070239
申请日：2008-07-16
申请人： ASCENT SOLAR TECHNOLOGIES, INC. , WOODS, Lawrence, M. , RIBELIN, Rosine, M. , NATH, Prem
发明人： WOODS, Lawrence, M. , RIBELIN, Rosine, M. , NATH, Prem
IPC分类号： H01L31/18
CPC分类号： H01L31/18 , H01L21/0256 , H01L21/02579 , H01L21/385 , H01L31/0336 , H01L31/0392 , H01L31/046 , H01L31/0725 , H01L31/073 , H01L31/1828 , H01L31/1884 , Y02E10/543 , Y02P70/521
摘要： A multi-junction photovoltaic cell includes a substrate and a back contact layer formed on the substrate. A low bandgap Group IB-IIIB-VIB 2 material solar absorber layer is formed on the back contact layer. A heterojunction partner layer is formed on the low bandgap solar absorber layer, to help form the bottom cell junction, and the heterojunction partner layer includes at least one layer of a high resistivity material having a resistivity of at least 100 ohms-centimeter. The high resistivity material has the formula (Zn and/or Mg)(S, Se, O, and/or OH). A conductive interconnect layer is formed above the heterojunction partner layer, and at least one additional single-junction photovoltaic cell is formed on the conductive interconnect layer, as a top cell. The top cell may have an amorphous Silicon or p-type Cadmium Selenide solar absorber layer. Cadmium Selenide may be converted from n-type to p-type with a chloride doping process.
摘要翻译：多结光伏电池包括在基板上形成的基板和背接触层。在背面接触层上形成低带隙IB-IIIB-VIB2族材料太阳能吸收层。异质结伙伴层形成在低带隙太阳能吸收层上，以帮助形成底部电池结，异质结伙伴层包括至少一层具有至少100欧姆 - 厘米电阻率的高电阻率材料层。高电阻率材料具有式（Zn和/或Mg）（S，Se，O和/或OH）。在异质结伙伴层之上形成导电互连层，并且在导电互连层上形成至少一个附加的单结光伏电池作为顶部电池。顶部单元可以具有非晶硅或p型硒化镉太阳能吸收层。硒化镉可以用氯化物掺杂工艺从n型转变成p型。

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