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1. 发明申请

WO2010051233A2 ADJUSTABLE GAS DISTRIBUTION APPARATUS 审中-公开
标题翻译：可调式燃气分配装置
公开(公告)号：WO2010051233A2
公开(公告)日：2010-05-06
申请号：PCT/US2009061893
申请日：2009-10-23
申请人： APPLIED MATERIALS INC , ZHANG LIN , TSUEI LUN , TSO ALAN , CHO TOM K , SHIEH BRIAN SY-YUAN
发明人： ZHANG LIN , TSUEI LUN , TSO ALAN , CHO TOM K , SHIEH BRIAN SY-YUAN
IPC分类号： H01L21/205 , H05H1/34
CPC分类号： H01J37/32935 , C23C16/45565 , C23C16/45589 , H01J37/3244
摘要： Embodiments of the present invention generally provide apparatus and methods for altering the contour of a gas distribution plate within a process chamber without breaking vacuum conditions within the chamber. In one embodiment, a central support device adjusted to vary the height of a central region of a gas distribution plate with respect to the periphery of the gas distribution plate. In another embodiment, a plurality of central support devices is adjusted to vary the height of a central region of a gas distribution plate with respect to the periphery of the plate. In yet another embodiment, a plurality of central support devices and a plurality of mid-range support devices are adjusted to vary the height of certain regions of the gas distribution plate with respect to other regions of the gas distribution plate. In one embodiment, the contour of the gas distribution plate is altered based on changes detected within the process chamber.
摘要翻译：本发明的实施例一般提供用于改变处理室内的气体分配板的轮廓而不破坏室内的真空条件的设备和方法。在一个实施例中，调节中央支撑装置以相对于气体分配板的周边改变气体分配板的中心区域的高度。在另一个实施例中，调节多个中央支撑装置以改变气体分配板的中心区域相对于板的周边的高度。在又一个实施例中，调节多个中央支撑装置和多个中档支撑装置以改变气体分配板的某些区域相对于气体分配板的其他区域的高度。在一个实施例中，气体分配板的轮廓基于在处理室内检测到的变化而改变。

2. 发明申请

WO2010065473A3 GAS DISTRIBUTION BLOCKER APPARATUS 审中-公开
标题翻译：燃气分配阻塞装置
公开(公告)号：WO2010065473A3
公开(公告)日：2010-08-19
申请号：PCT/US2009066145
申请日：2009-11-30
申请人： APPLIED MATERIALS INC , TSUEI LUN , TSO ALAN , CHO TOM K , SHIEH BRIAN SY-YUAN
发明人： TSUEI LUN , TSO ALAN , CHO TOM K , SHIEH BRIAN SY-YUAN
IPC分类号： H01L21/205 , H05H1/34
CPC分类号： C23C16/45565 , C23C16/45559 , H01L31/076 , H01L31/1824 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： Embodiments of the present invention generally provide apparatus and methods for altering the flow and pressure differential of process gases supplied across a showerhead of a processing chamber to provide improved deposition uniformity across the surface of a substrate disposed therein. In one embodiment, a blocker plate is disposed between a backing plate and a showerhead. In one embodiment, the distance between the blocker plate and the showerhead is adjustable. In another embodiment, the blocker plate has a non-planar surface contour. In another embodiment, a regional blocker plate is disposed between a backing plate and a showerhead. In another embodiment, a central blocker plate and a peripheral blocker plate are disposed between a backing plate and a showerhead.
摘要翻译：本发明的实施例通常提供用于改变在处理腔室的喷头上供应的处理气体的流动和压差的装置和方法，以在设置于其中的基板的表面上提供改善的沉积均匀性。在一个实施例中，阻挡板布置在背板和喷头之间。在一个实施例中，阻挡板和喷头之间的距离是可调的。在另一个实施例中，阻挡板具有非平面表面轮廓。在另一个实施例中，区域阻挡板设置在背板和喷头之间。在另一个实施例中，中心阻挡板和外围阻挡板设置在背板和喷头之间。

3. 发明申请

WO2010048165A3 MULTIPLE GAS FEED APPARATUS AND METHOD 审中-公开
标题翻译：多种气体送料装置及方法
公开(公告)号：WO2010048165A3
公开(公告)日：2010-08-12
申请号：PCT/US2009061303
申请日：2009-10-20
申请人： APPLIED MATERIALS INC , TSO ALAN , TSUEI LUN , CHO TOM K , SHIEH BRIAN SY-YUAN
发明人： TSO ALAN , TSUEI LUN , CHO TOM K , SHIEH BRIAN SY-YUAN
IPC分类号： H01L21/205
CPC分类号： C23C16/45565 , C23C16/45574
摘要： Embodiments of the present invention generally provide apparatus and methods for introducing process gases into a processing chamber at a plurality of locations. In one embodiment, a central region of a showerhead and corner regions of a showerhead are fed process gases from a central gas source with a first mass flow controller regulating the flow in the central region and a second mass flow controller regulating the flow in the corner regions. In another embodiment, a central region of a showerhead is fed process gases from a first gas source and corner regions of the showerhead are fed process gases from a second gas source. In another embodiment, a central region of a showerhead is fed process gases from a first gas source and each corner region of the showerhead is fed process gases from a separate gas source.
摘要翻译：本发明的实施例通常提供用于将处理气体引入多个位置处的处理室中的装置和方法。在一个实施例中，喷头的中心区域和喷头的拐角区域从中心气体源供给处理气体，第一质量流量控制器调节中心区域中的流动，第二质量流量控制器调节角落中的流动区域。在另一个实施例中，喷头的中心区域从第一气体源供给工艺气体，并且喷头的拐角区域从第二气体源供给工艺气体。在另一个实施例中，喷头的中心区域从第一气体源供给工艺气体，喷头的每个拐角区域从单独的气体源供给工艺气体。

4. 发明申请

WO2010036657A3 METHODS FOR FABRICATING FACEPLATE OF SEMICONDUCTOR APPARATUS 审中-公开
标题翻译：用于制备半导体装置的方法
公开(公告)号：WO2010036657A3
公开(公告)日：2010-07-01
申请号：PCT/US2009057882
申请日：2009-09-22
申请人： APPLIED MATERIALS INC , TAN TIEN FAK , TSUEI LUN , CHEN SHAOFENG , RABINOVICH FELIX , LUBOMIRSKY DMITRY , HINCKLEY KIMBERLY
发明人： TAN TIEN FAK , TSUEI LUN , CHEN SHAOFENG , RABINOVICH FELIX , LUBOMIRSKY DMITRY , HINCKLEY KIMBERLY
IPC分类号： H01L21/205 , H01L21/3065
CPC分类号： C23C16/45565 , H01J37/3244 , Y10T29/49401
摘要： A method for manufacturing a faceplate of a semiconductor apparatus is provided. The method includes selecting a size of a tool in response to a predetermined specification of a predetermined gas parameter. The tool is used to form the holes within the faceplate. A first gas parameter of the holes of the faceplate is measured by an apparatus to determine if the measured first gas parameter of the holes of the faceplate is within the predetermined specification.
摘要翻译：提供一种制造半导体装置的面板的方法。该方法包括响应于预定气体参数的预定规格来选择工具的尺寸。该工具用于在面板内形成孔。面板的孔的第一气体参数由装置测量以确定面板的孔的测量的第一气体参数是否在预定规格内。

5. 发明申请

WO2009140153A3 APPARATUS FOR ETCHING SEMICONDUCTOR WAFERS 审中-公开
标题翻译：用于蚀刻半导体波长的装置
公开(公告)号：WO2009140153A3
公开(公告)日：2010-04-01
申请号：PCT/US2009043261
申请日：2009-05-08
申请人： APPLIED MATERIALS INC , LUBOMIRSKY DMITRY , TAN TIEN FAK , TSUEI LUN
发明人： LUBOMIRSKY DMITRY , TAN TIEN FAK , TSUEI LUN
IPC分类号： H01L21/683 , H01L21/205 , H01L21/3065 , H01L21/687
CPC分类号： H01L21/67126 , H01L21/6838 , Y10T279/23
摘要： A wafer pedestal of a semiconductor apparatus is provided. The wafer pedestal is capable of supporting a substrate. The wafer pedestal includes a pedestal having at least one purge opening configured to flow a purge gas and at least one chucking opening configured to chuck the substrate over the pedestal. The pedestal includes a sealing band disposed between the at least one purge opening and the at least one chucking opening. The sealing band is configured to support the substrate.
摘要翻译：提供半导体装置的晶片基座。晶片基座能够支撑基板。晶片基座包括具有至少一个净化开口的基座，该至少一个净化开口构造成流过净化气体;以及至少一个夹紧开口，其构造成将衬底夹在基座上。基座包括设置在至少一个吹扫开口和至少一个夹紧开口之间的密封带。密封带构造成支撑基底。

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