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1. 发明申请

WO2007111676A3 METHOD OF DIRECT PLATING OF COPPER ON A SUBSTRATE STRUCTURE 审中-公开
标题翻译：在基板结构上直接镀铜的方法
公开(公告)号：WO2007111676A3
公开(公告)日：2007-12-27
申请号：PCT/US2006060072
申请日：2006-10-19
申请人： APPLIED MATERIALS INC , ROSENFELD ARON , HAFEZI HOOMAN , CHUNG HUA , DUKOVIC JOHN O , ZHU LEI , KOVARSKY NICOLAY , HE RENREN , SUN ZHI-WEN
发明人： ROSENFELD ARON , HAFEZI HOOMAN , CHUNG HUA , DUKOVIC JOHN O , ZHU LEI , KOVARSKY NICOLAY , HE RENREN , SUN ZHI-WEN
IPC分类号： C25D5/34
CPC分类号： C25D5/34 , C25D3/38 , C25D5/10 , C25D5/18 , C25D5/54 , H01L21/2885 , H01L21/76843 , H01L21/76846 , H01L21/76861 , H01L21/76862 , H01L21/76868 , H01L21/76873 , H01L21/76877 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： The present invention teaches a method for depositing a copper seed layer onto a substrate surface, generally onto a barrier layer. The barrier layer may include a refractory metal and/or a group 8, 9 or 10 metal. The method includes cathodically pre-treating the substrate in an acid-containing solution. The substrate is then placed into a copper solution that includes complexed copper ions and a current or bias is applied across the substrate surface. The complexed copper ions are reduced to deposit a copper seed layer onto the barrier layer. In one aspect, a complex alkaline bath is then used to electrochemically plate a gapfill layer on the substrate surface, followed by overfill in the same bath. In another aspect, an acidic bath ECP gapfill process and overfill process follow the alkaline seed layer process.
摘要翻译：本发明教导了一种用于将铜籽晶层沉积到衬底表面上的方法，通常在阻挡层上。阻挡层可以包括难熔金属和/或8,9或10族金属。该方法包括在含酸溶液中阴极预处理基材。然后将衬底放入包含复合铜离子的铜溶液中，并在衬底表面上施加电流或偏压。复合的铜离子被还原以在阻挡层上沉积铜晶种层。一方面，然后使用复杂的碱性电池在衬底表面上电化学沉积填隙层，然后在同一浴中过充。另一方面，酸性浴ECP间隙填充工艺和过度填充工艺遵循碱性种子层工艺。

2. 发明申请

WO2005123988B1 METHOD OF BARRIER LAYER SURFACE TREATMENT TO ENABLE DIRECT COPPER PLATING ON BARRIER METAL 审中-公开
标题翻译：阻挡层表面处理方法对直径铜镀层在边界金属上的影响
公开(公告)号：WO2005123988B1
公开(公告)日：2006-04-06
申请号：PCT/US2005019902
申请日：2005-06-07
申请人： APPLIED MATERIALS INC , SUN ZHI-WEN , HE RENREN
发明人： SUN ZHI-WEN , HE RENREN
IPC分类号： C25D5/34 , C25D7/04 , C25D7/12 , H01L21/02 , H01L21/288 , H01L21/768 , H01L23/532
CPC分类号： H01L21/02068 , C25D5/34 , C25D7/123 , H01L21/2885 , H01L21/76843 , H01L21/76861 , H01L21/76864 , H01L21/76871 , H01L21/76873 , H01L21/76877 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of a method of barrier layer surface treatment to enable direct copper plating without copper seed layer. In one embodiment, a method of plating copper on a substrate with a group VIII metal layer on top comprises pre-treating the substrate surface by removing a group VIII metal surface oxide layer and/or surface contaminants and plating copper on the pre-treated group VIII metal surface. Pre-treating the substrate can be accomplished by annealing the substrate in an environment with a hydrogen-containing gas environment and/or a non-reactive gas(es) to group VIII, by a cathodic treatment in an acid-containing bath, or by immersing the substrate in an acid-containing bath.
摘要翻译：一种阻挡层表面处理方法的实施例，以实现不含铜种子层的直接镀铜。在一个实施例中，在顶部上具有VIII族金属层的基板上镀铜的方法包括通过去除第八族金属表面氧化物层和/或表面污染物并在预处理组上镀铜来预处理该衬底表面 Ⅷ金属表面。通过在含酸浴中进行阴极处理，或通过在含酸浴中进行阴极处理，可以通过在具有含氢气体环境和/或非反应性气体至VIII族的环境中将基板退火来进行预处理将基板浸入含酸浴中。

3. 发明申请

WO2010111197A2 ACID CHEMISTRIES AND METHODOLOGIES FOR TEXTURING TRANSPARENT CONDUCTIVE OXIDE MATERIALS 审中-公开
标题翻译：用于纹理透明导电氧化物材料的酸化学和方法
公开(公告)号：WO2010111197A2
公开(公告)日：2010-09-30
申请号：PCT/US2010028199
申请日：2010-03-22
申请人： INTERMOLECULAR INC , SUN ZHI-WEN , KUMAR NITIN , ZHANG GUIZHEN , NGUYEN MINH ANH , KALYANKAR NIKHIL
发明人： SUN ZHI-WEN , KUMAR NITIN , ZHANG GUIZHEN , NGUYEN MINH ANH , KALYANKAR NIKHIL
IPC分类号： H01L31/042
CPC分类号： C23C14/5873 , C03C17/36 , C03C17/3678 , C03C2217/944 , C03C2218/32 , C09K13/04 , C23C14/086 , H01L31/02366 , Y02E10/50
摘要： Surface texturing of the transparent conductive oxide (TCO) front contact of a thin film photovoltaic (TFPV) solar cell is needed to enhance the light-trapping capability of the TFPV solar cells and thus improving the solar cell efficiency. Embodiments of the current invention describe chemical formulations and methods for the wet etching of the TCO. The formulations and methods may be optimized to tune the surface texturing of the TCO as desired.
摘要翻译：需要薄膜光伏（TFPV）太阳能电池的透明导电氧化物（TCO）前触点的表面纹理来增强TFPV太阳能电池的光捕获能力，从而提高太阳能电池效率。本发明的实施方案描述了用于湿法蚀刻TCO的化学配方和方法。可以优化配方和方法以根据需要调整TCO的表面纹理。

4. 发明申请

WO02068712A3 REMOVAL OF ETCHANT RESIDUES 审中-公开
标题翻译：去除残留物
公开(公告)号：WO02068712A3
公开(公告)日：2003-05-01
申请号：PCT/US0203093
申请日：2002-01-25
申请人： APPLIED MATERIALS INC
发明人： SUN ZHI-WEN , JIANG ANBEI , HUANG TUO-CHUAN
IPC分类号： B08B7/00 , C03C15/00 , C23C16/44 , C23F1/00 , H01J37/32 , H01L21/00 , H01L21/304 , H01L21/306 , H01L21/3065
CPC分类号： H01L21/02046 , H01J37/321 , H01J37/32449 , H01J37/32935
摘要： A substrate processing apparatus has a chamber (108) with a subs trate transport to transport a substrate onto a substrate support (170) in the chamber, a gas supply (42), to provide a gas in th e chamber, a gas energizer (158) to energize the gas, and a gas exhaust to exhaust (152) the gas. A controller (300) operates one or more of the substrate support, gas supply, gas energizer, and gas exhaust, to set etching process conditions in the chamber to etch a plurality of substrates, thereby depositing etchant residues on surfaces in the chamber. The controller also operates one or more of the substrate support, gas supply, gas energizer, and gas exhaust, to set cleaning process conditions in the chamber to clean the etchant residues. The cleaning process conditions comprise a volumetric flow ratio of O2 to CF4 of from about 1:1 to about 1:40.
摘要翻译：衬底处理装置具有一个腔室（108），该腔室具有将衬底输送到腔室中的衬底支撑件（170）上的辅助输送器，气体供应器（42），以在腔室中提供气体，气体激发器（ 158）以使气体通电，并且排气排出（152）气体。控制器（300）操作衬底支撑件，气体供应器，气体激发器和气体排出中的一个或多个，以在腔室中设置蚀刻工艺条件以蚀刻多个衬底，由此在腔室中的表面上沉积蚀刻剂残留物。控制器还操作一个或多个衬底支撑件，气体供应器，气体激励器和气体排出器，以设置腔室中的清洁工艺条件以清洁蚀刻剂残留物。清洗过程条件包括O2至CF4的体积流量比为约1:1至约1:40。

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