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1. 发明申请

WO2007149761A3 METHODS TO IMPROVE THE IN-FILM DEFECTIVITY OF PECVD AMORPHOUS CARBON FILMS 审中-公开
标题翻译：提高PECVD非晶碳膜薄膜缺陷度的方法
公开(公告)号：WO2007149761A3
公开(公告)日：2008-03-06
申请号：PCT/US2007071182
申请日：2007-06-14
申请人： APPLIED MATERIALS INC , PADHI DEENESH , CHAN CHIU , RATHI SUDHA , BALASUBRAMANIAN GANESH , ZHOU JIANHUA , JANAKIRAMAN KARTHIK , SEAMONS MARTIN JAY , SIVARAMAKRISHNAN VISWESWAREN , WITTY DEREK R , M SAAD HICHEM
发明人： PADHI DEENESH , CHAN CHIU , RATHI SUDHA , BALASUBRAMANIAN GANESH , ZHOU JIANHUA , JANAKIRAMAN KARTHIK , SEAMONS MARTIN JAY , SIVARAMAKRISHNAN VISWESWAREN , WITTY DEREK R , M SAAD HICHEM
IPC分类号： C23C16/26 , C23C16/00 , H05H1/24
CPC分类号： C23C16/45565 , C23C16/0254 , C23C16/26 , C23C16/4404
摘要： An article having a protective coating for use in semiconductor applications and methods for making the same are provided. In one embodiment, a method of coating an aluminum surface of an article utilized in a semiconductor processing chamber is provided. The method comprises providing a processing chamber, placing the article into the processing chamber, flowing a first gas comprising a carbon source into the processing chamber, flowing a second gas comprising a nitrogen source into the processing chamber, forming a plasma in the chamber, and depositing a coating material on the aluminum surface. In one embodiment, the coating material comprises an amorphous carbon nitrogen containing layer. In one embodiment, the article comprises a showerhead configured to deliver a gas to the processing chamber.
摘要翻译：提供了具有用于半导体应用的保护涂层的制品及其制造方法。在一个实施例中，提供了一种涂覆在半导体处理室中的制品的铝表面的方法。该方法包括提供处理室，将物品放入处理室，将包含碳源的第一气体流入处理室，将包含氮源的第二气体流入处理室，在室内形成等离子体;以及在铝表面上沉积涂层材料。在一个实施方案中，涂料包含无定形含碳氮层。在一个实施例中，制品包括被配置为将气体输送到处理室的喷头。

2. 发明申请

WO2009111395A3 METHOD FOR DEPOSITING AN AMORPHOUS CARBON FILM WITH IMPROVED DENSITY AND STEP COVERAGE 审中-公开
标题翻译：用改进密度和阶跃覆盖率沉积非晶碳膜的方法
公开(公告)号：WO2009111395A3
公开(公告)日：2009-10-29
申请号：PCT/US2009035726
申请日：2009-03-02
申请人： APPLIED MATERIALS INC , PADHI DEENESH , HA HYOUNG-CHAN , RATHI SUDHA , WITTY DEREK R , CHAN CHIU , PARK SOHYUN , BALASUBRAMANIAN GANESH , JANAKIRAMAN KARTHIK , SEAMONS MARTIN JAY , SIVARAMAKRISHNAN VISWESWAREN , KIM BOK HOEN , M SAAD HICHEM
发明人： PADHI DEENESH , HA HYOUNG-CHAN , RATHI SUDHA , WITTY DEREK R , CHAN CHIU , PARK SOHYUN , BALASUBRAMANIAN GANESH , JANAKIRAMAN KARTHIK , SEAMONS MARTIN JAY , SIVARAMAKRISHNAN VISWESWAREN , KIM BOK HOEN , M SAAD HICHEM
IPC分类号： H01L21/205
CPC分类号： C23C16/045 , C23C16/26 , C23C16/5096 , C23C16/56 , H01L21/31144 , H01L21/3146
摘要： A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.
摘要翻译：一种用于在衬底上沉积无定形碳层的方法包括以下步骤：将衬底定位在腔室中;将烃源引入处理腔室;将重稀有气体引入处理腔室;以及在处理腔室中产生等离子体。重稀有气体选自氩，氪，氙及其组合，稀有气体的摩尔流率大于烃源的摩尔流率。可以包括后沉积终止步骤，其中烃源和惰性气体的流动停止并且等离子体在腔室中保持一段时间以从其中去除颗粒。

3. 发明申请

WO2008043047B1 APPARATUS AND METHOD FOR SUBSTRATE CLAMPING IN A PLASMA CHAMBER 审中-公开
标题翻译：用于在等离子体室中衬底夹紧的装置和方法
公开(公告)号：WO2008043047B1
公开(公告)日：2008-10-02
申请号：PCT/US2007080491
申请日：2007-10-04
申请人： APPLIED MATERIALS INC , BALASUBRAMANIAN GANESH , BANSAL AMIT , JUCO ELLER Y , AYOUB MOHAMAD , KIM HYUNG-JOON , JANAKIRAMAN KARTHIK , RATHI SUDHA , PADHI DEENESH , SEAMONS MARTIN JAY , SIVARAMAKRISHNAN VISWESWAREN , KIM BOK HOEN , AL-BAYATI AMIR , WITTY DEREK R , M SAAD HICHEM , BARYSHNIKOV ANTON , CHAN CHIU , LIU SHUANG
发明人： BALASUBRAMANIAN GANESH , BANSAL AMIT , JUCO ELLER Y , AYOUB MOHAMAD , KIM HYUNG-JOON , JANAKIRAMAN KARTHIK , RATHI SUDHA , PADHI DEENESH , SEAMONS MARTIN JAY , SIVARAMAKRISHNAN VISWESWAREN , KIM BOK HOEN , AL-BAYATI AMIR , WITTY DEREK R , M SAAD HICHEM , BARYSHNIKOV ANTON , CHAN CHIU , LIU SHUANG
IPC分类号： G06F11/30 , G06F19/00 , G21C17/00
CPC分类号： H01L21/6831 , C23C16/52 , H01J37/32431 , H01L21/67069 , H01L21/67253
摘要： The present invention generally provides methods and apparatus for monitoring and maintaining flatness of a substrate in a plasma reactor. Certain embodiments of the present invention provide a method for processing a substrate comprising positioning the substrate on an electrostatic chuck, applying an RF power between the an electrode in the electrostatic chuck and a counter electrode positioned parallel to the electrostatic chuck, applying a DC bias to the electrode in the electrostatic chuck to clamp the substrate on the electrostatic chuck, and measuring an imaginary impedance of the electrostatic chuck.
摘要翻译：本发明总体上提供了用于监测和维持等离子体反应器中的基板的平整度的方法和装置。本发明的某些实施例提供了一种用于处理衬底的方法，包括将衬底定位在静电吸盘上，在静电吸盘中的电极和平行于静电吸盘的位置之间施加RF功率，将DC偏压施加到静电卡盘中的电极将基板夹在静电卡盘上，并测量静电卡盘的假想阻抗。

4. 发明申请

WO2008002844A3 METHOD FOR DEPOSITING AN AMORPHOUS CARBON FILM WITH IMPROVED DENSITY AND STEP COVERAGE 审中-公开
标题翻译：用改进的密度和步骤覆盖沉积非晶碳膜的方法
公开(公告)号：WO2008002844A3
公开(公告)日：2008-08-07
申请号：PCT/US2007071923
申请日：2007-06-22
申请人： APPLIED MATERIALS INC , PADHI DEENESH , HA HYOUNG-CHAN , RATHI SUDHA , WITTY DEREK R , CHAN CHIU , PARK SOHYUN , BALASUBRAMANIAN GANESH , JANAKIRAMAN KARTHIK , SEAMONS MARTIN JAY , SIVARAMAKRISHNAN VISWESWAREN , KIM BOK HOEN , M SAAD HICHEM
发明人： PADHI DEENESH , HA HYOUNG-CHAN , RATHI SUDHA , WITTY DEREK R , CHAN CHIU , PARK SOHYUN , BALASUBRAMANIAN GANESH , JANAKIRAMAN KARTHIK , SEAMONS MARTIN JAY , SIVARAMAKRISHNAN VISWESWAREN , KIM BOK HOEN , M SAAD HICHEM
IPC分类号： H05H1/24
CPC分类号： H01L21/3146 , C23C16/045 , C23C16/26 , C23C16/5096 , C23C16/56 , H01L21/31144
摘要： A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.
摘要翻译：在基板上沉积无定形碳层的方法包括以下步骤：将基板定位在室中，将烃源引入处理室，将重稀有气体引入处理室，以及在处理室中产生等离子体。重稀土气体选自氩，氪，氙及其组合，惰性气体的摩尔流量大于烃源的摩尔流量。可以包括沉积终止步骤，其中停止烃源和惰性气体的流动，并且将等离子体保持在室中一段时间以从中除去颗粒。

5. 发明申请

WO2008043047A3 APPARATUS AND METHOD FOR SUBSTRATE CLAMPING IN A PLASMA CHAMBER 审中-公开
标题翻译：在等离子室中用于衬底夹紧的装置和方法
公开(公告)号：WO2008043047A3
公开(公告)日：2008-07-31
申请号：PCT/US2007080491
申请日：2007-10-04
申请人： APPLIED MATERIALS INC , BALASUBRAMANIAN GANESH , BANSAL AMIT , JUCO ELLER Y , AYOUB MOHAMAD , KIM HYUNG-JOON , JANAKIRAMAN KARTHIK , RATHI SUDHA , PADHI DEENESH , SEAMONS MARTIN JAY , SIVARAMAKRISHNAN VISWESWAREN , KIM BOK HOEN , AL-BAYATI AMIR , WITTY DEREK R , M SAAD HICHEM , BARYSHNIKOV ANTON , CHAN CHIU , LIU SHUANG
发明人： BALASUBRAMANIAN GANESH , BANSAL AMIT , JUCO ELLER Y , AYOUB MOHAMAD , KIM HYUNG-JOON , JANAKIRAMAN KARTHIK , RATHI SUDHA , PADHI DEENESH , SEAMONS MARTIN JAY , SIVARAMAKRISHNAN VISWESWAREN , KIM BOK HOEN , AL-BAYATI AMIR , WITTY DEREK R , M SAAD HICHEM , BARYSHNIKOV ANTON , CHAN CHIU , LIU SHUANG
IPC分类号： G06F11/30 , G06F19/00 , G21C17/00
CPC分类号： H01L21/6831 , C23C16/52 , H01J37/32431 , H01L21/67069 , H01L21/67253
摘要： The present invention generally provides methods and apparatus for monitoring and maintaining flatness of a substrate in a plasma reactor. Certain embodiments of the present invention provide a method for processing a substrate comprising positioning the substrate on an electrostatic chuck, applying an RF power between the an electrode in the electrostatic chuck and a counter electrode positioned parallel to the electrostatic chuck, applying a DC bias to the electrode in the electrostatic chuck to clamp the substrate on the electrostatic chuck, and measuring an imaginary impedance of the electrostatic chuck.
摘要翻译：本发明总体上提供了用于监测和维持等离子体反应器中的衬底的平坦度的方法和设备。本发明的某些实施例提供了一种用于处理衬底的方法，包括：将衬底定位在静电吸盘上;在静电吸盘中的电极和平行于静电吸盘定位的反电极之间施加RF功率;将DC偏压施加到静电吸盘中的电极夹紧静电吸盘上的基片，并测量静电吸盘的虚阻抗。

6. 发明申请

WO2007097822A3 ENHANCEMENT OF REMOTE PLASMA SOURCE CLEAN FOR DIELECTRIC FILMS 审中-公开
标题翻译：用于电介质膜的远程等离子体源清洁的增强
公开(公告)号：WO2007097822A3
公开(公告)日：2008-02-07
申请号：PCT/US2006061154
申请日：2006-11-21
申请人： APPLIED MATERIALS INC , NOWAK THOMAS , YIM KANG SUB , TANG SUM-YEE BETTY , LEE KWANGDUK DOUGLAS , NGUYEN VU NGOC TRAN , SINGLETON DENNIS , SEAMONS MARTIN JAY , JANAKIRAMAN KARTHIK , BALASUBRAMANIAN GANESH , AYOUB MOHAMED , YEH WENDY H , DEMOS ALEXANDROS T , M SAAD HICHEM
发明人： NOWAK THOMAS , YIM KANG SUB , TANG SUM-YEE BETTY , LEE KWANGDUK DOUGLAS , NGUYEN VU NGOC TRAN , SINGLETON DENNIS , SEAMONS MARTIN JAY , JANAKIRAMAN KARTHIK , BALASUBRAMANIAN GANESH , AYOUB MOHAMED , YEH WENDY H , DEMOS ALEXANDROS T , M SAAD HICHEM
IPC分类号： B08B6/00 , B08B9/00
CPC分类号： C23C16/4405 , B08B7/0035 , H01J37/32357 , H01J37/32862
摘要： Methods for cleaning semiconductor processing chambers used to process carbon-containing films, such as amorphous carbon films, barrier films comprising silicon and carbon, and low dielectric constant films including silicon, oxygen, and carbon are provided. The methods include using a remote plasma source to generate reactive species that clean interior surfaces of a processing chamber in the absence of RF power in the chamber. The reactive species are generated from an oxygen-containing gas, such as O2, and/or a halogen-containing gas, such as NF3. An oxygen-based ashing process may also be used to remove carbon deposits from the interior surfaces of the chamber before the chamber is exposed to the reactive species from the remote plasma source.
摘要翻译：提供了用于处理用于处理含碳膜的半导体处理室的方法，例如非晶碳膜，包含硅和碳的阻挡膜以及包括硅，氧和碳的低介电常数膜。这些方法包括使用远程等离子体源来产生在腔室中没有RF功率的情况下清洁处理室的内表面的反应物质。反应性物质由含氧气体如O 2和/或含卤素气体如NF 3产生。在室暴露于来自远程等离子体源的反应物质之前，还可以使用氧基灰化方法从室的内表面去除碳沉积物。

7. 发明申请

WO2009117173A4 TUNABLE GROUND PLANES IN PLASMA CHAMBERS 审中-公开
标题翻译：等离子体燃烧室中的接地平台
公开(公告)号：WO2009117173A4
公开(公告)日：2009-11-12
申请号：PCT/US2009031966
申请日：2009-01-26
申请人： APPLIED MATERIALS INC , JANAKIRAMAN KARTHIK , NOWAK THOMAS , ROCHA-ALVAREZ JUAN CARLOS , FODOR MARK A , DUBOIS DALE R , BANSAL AMIT , AYOUB MOHAMAD , JUCO ELLER Y , SIVARAMAKRISHNAN VISWESWAREN , M SAAD HICHEM
发明人： JANAKIRAMAN KARTHIK , NOWAK THOMAS , ROCHA-ALVAREZ JUAN CARLOS , FODOR MARK A , DUBOIS DALE R , BANSAL AMIT , AYOUB MOHAMAD , JUCO ELLER Y , SIVARAMAKRISHNAN VISWESWAREN , M SAAD HICHEM
IPC分类号： H01L21/205 , H01L21/26 , H01L21/30 , H05H1/34
CPC分类号： C23C16/45565 , C23C16/4412 , C23C16/458 , C23C16/4586 , C23C16/503 , C23C16/505 , C23C16/5096 , H01J37/32091 , H01J37/32165 , H01J37/32532 , H01J37/32541
摘要： An apparatus and method are provided for controlling the intensity and distribution of a plasma discharge in a plasma chamber. In one embodiment, a shaped electrode is embedded in a substrate support to provide an electric field with radial and axial components inside the chamber. In another embodiment, the face plate electrode of the showerhead assembly is divided into zones by isolators, enabling different voltages to be applied to the different zones. Additionally, one or more electrodes may be embedded in the chamber side walls.
摘要翻译：提供了一种用于控制等离子体室中的等离子体放电的强度和分布的装置和方法。在一个实施例中，成形电极嵌入在基板支撑件中以在腔室内提供具有径向和轴向分量的电场。在另一个实施例中，喷头组件的面板电极被隔离器分成区域，使不同的电压能够施加到不同的区域。另外，一个或多个电极可以嵌入在腔室侧壁中。

8. 发明申请

WO2009134588A3 NONPLANAR FACEPLATE FOR A PLASMA PROCESSING CHAMBER 审中-公开
标题翻译：用于等离子体加工室的不锈钢板
公开(公告)号：WO2009134588A3
公开(公告)日：2010-03-18
申请号：PCT/US2009039674
申请日：2009-04-06
申请人： APPLIED MATERIALS INC , ZHOU JIANHUA , PADHI DEENESH , JANAKIRAMAN KARTHIK , CHENG SIU F , YU HANG , SARIPALLI YOGANAND N , SUMMAN TERSEM
发明人： ZHOU JIANHUA , PADHI DEENESH , JANAKIRAMAN KARTHIK , CHENG SIU F , YU HANG , SARIPALLI YOGANAND N , SUMMAN TERSEM
IPC分类号： H05H1/34 , H01L21/205 , H01L21/3065
CPC分类号： C23C16/5096 , H01J37/32541 , Y10T117/10
摘要： A method and apparatus for adjust local plasma density during a plasma process. One embodiment provides an electrode assembly comprising a conductive faceplate having a nonplanar surface. The nonplanar surface is configured to face a substrate during processing and the conductive faceplate is disposed so that the nonplanar surface is opposing a substrate support having an electrode. The conductive faceplate and the substrate support form a plasma volume. The nonplanar surface is configured to adjust electric field between the conductive faceplate and the electrode by varying a distance between the conductive faceplate and the electrode.
摘要翻译：一种用于在等离子体工艺期间调节局部等离子体密度的方法和装置。一个实施例提供一种电极组件，其包括具有非平面表面的导电面板。非平面表面被配置为在处理期间面向衬底，并且设置导电面板使得非平面表面与具有电极的衬底支撑件相对。导电面板和基板支撑件形成等离子体体积。非平面被配置为通过改变导电面板和电极之间的距离来调节导电面板和电极之间的电场。

9. 发明申请

WO2010008827A2 PEDESTAL HEATER FOR LOW TEMPERATURE PECVD APPLICATION 审中-公开
标题翻译：用于低温PECVD应用的PEDESTAL加热器
公开(公告)号：WO2010008827A2
公开(公告)日：2010-01-21
申请号：PCT/US2009048253
申请日：2009-06-23
申请人： APPLIED MATERIALS INC , ZHOU JIANHUA , YAP LIPYEOW , SKLYAR DMITRY , AYOUB MOHAMAD , JANAKIRAMAN KARTHIK , ROCHA-ALVAREZ JUAN CARLOS
发明人： ZHOU JIANHUA , YAP LIPYEOW , SKLYAR DMITRY , AYOUB MOHAMAD , JANAKIRAMAN KARTHIK , ROCHA-ALVAREZ JUAN CARLOS
IPC分类号： H01L21/683 , H01L21/205 , H01L21/687
CPC分类号： C23C16/4586 , C23C16/46 , C23C16/52 , H01L21/67103 , H01L21/68792
摘要： A method and apparatus for providing power to a heated support pedestal is provided. In one embodiment, a process kit is described. The process kit includes a hollow shaft made of a conductive material coupled to a substrate support at one end and a base assembly at an opposing end, the base assembly adapted to couple to a power box disposed on a semiconductor processing tool. In one embodiment, the base assembly comprises at least one exposed electrical connector disposed in an insert made of a dielectric material, such as a plastic resin.
摘要翻译：提供了用于向加热的支撑基座提供动力的方法和装置。在一个实施例中，描述了处理套件。该处理套件包括由导电材料制成的空心轴，该空心轴在一端耦合到衬底支撑件并且在相对端耦合到基底组件，该基底组件适于耦合到布置在半导体处理工具上的功率盒。在一个实施例中，基座组件包括至少一个暴露的电连接器，该暴露的电连接器设置在由诸如塑料树脂的介电材料制成的插入件中。

10. 发明申请

WO2005052998A3 GAS DISTRIBUTION SHOWERHEAD FEATURING EXHAUST APERTURES 审中-公开
标题翻译：气体分布式淋浴器特色排气口
公开(公告)号：WO2005052998A3
公开(公告)日：2007-11-01
申请号：PCT/US2004039065
申请日：2004-11-19
申请人： APPLIED MATERIALS INC , GIANOULAKIS STEVEN , JANAKIRAMAN KARTHIK
发明人： GIANOULAKIS STEVEN , JANAKIRAMAN KARTHIK
IPC分类号： C30B25/14 , C23C16/44 , C23C16/455
CPC分类号： C23C16/455 , C23C16/4412 , C23C16/45565
摘要： Embodiments in accordance with the present invention relate to systems and methods for distributing process gases over the surface of a workpiece. In accordance with one embodiment of the present invention, process gases are flowed from a source to a workpiece surface through a gas distribution showerhead defining a plurality of orifices. The gas distribution showerhead also features a plurality of exhaust orifices for removing material above the wafer surface. The supplemental exhaust afforded by the showerhead exhaust orifices serves to reduce variations in gas velocity attributable to radial flow across the wafer surface, thereby enhancing the uniformity between resulting processing at the wafer edge and center. The ratio of the distribution and exhaust aperture areas may vary or remain constant across the faceplate. Additionally, the size and number of distribution and exhaust apertures may be selected to optimize gas distribution across the semiconductor wafer surface.
摘要翻译：根据本发明的实施例涉及用于在工件的表面上分配工艺气体的系统和方法。根据本发明的一个实施例，工艺气体通过限定多个孔的气体分配喷头从源流向工件表面。气体分配喷头还具有用于去除晶片表面之上的材料的多个排气孔。由喷头排气孔提供的补充排气用于减少归因于晶片表面上的径向流动的气体速度的变化，由此增强晶片边缘和中心处的所得到的处理之间的均匀性。分布和排放孔径面积的比例可能在面板上变化或保持恒定。此外，可以选择分配和排气孔径的尺寸和数量以优化半导体晶片表面上的气体分布。

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