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1. 发明申请

WO03029515A2 FORMATION OF COMPOSITE TUNGSTEN FILMS 审中-公开
标题翻译：形成复合陶瓷薄膜
公开(公告)号：WO03029515A2
公开(公告)日：2003-04-10
申请号：PCT/US0222585
申请日：2002-07-16
申请人： APPLIED MATERIALS INC , LAI KEN K , BYUN JEONG SOO , WU FREDERICK C , SRINIVAS RAMANUJAPURAM A , GELATOS AVGERINOS , CHANG MEI , KORI MORIS , SINHA ASHOK K , CHUNG HUA , FANG HONGBIN , MAK ALFRED W , YANG MICHAEL X , XI MING
发明人： LAI KEN K , BYUN JEONG SOO , WU FREDERICK C , SRINIVAS RAMANUJAPURAM A , GELATOS AVGERINOS , CHANG MEI , KORI MORIS , SINHA ASHOK K , CHUNG HUA , FANG HONGBIN , MAK ALFRED W , YANG MICHAEL X , XI MING
IPC分类号： C23C16/14 , C23C16/02 , C23C16/04 , C23C16/08 , C23C16/44 , C23C16/455 , H01L21/28 , H01L21/285 , H01L21/768 , C23C16/16
CPC分类号： C23C16/45525 , C23C16/0281 , C23C16/08 , C23C16/14 , C23C16/45523 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and depositing a bulk layer of tungsten over the nucleation layer.
摘要翻译：提供了沉积钨膜的方法。所述方法包括通过交替地将钨前体和还原气体吸附在基底上沉积成核层，以及在成核层上沉积钨层。

2. 发明申请

WO2006078779A3 METHODS FOR DEPOSITING TUNGSTEN LAYERS EMPLOYING ATOMIC LAYER DEPOSITION TECHNIQUES 审中-公开
标题翻译：沉积原子层沉积技术的沉积层的方法
公开(公告)号：WO2006078779A3
公开(公告)日：2009-04-23
申请号：PCT/US2006001838
申请日：2006-01-19
申请人： APPLIED MATERIALS INC , LAI KEN KAUNG , RAJAGOPALAN RAVI , KHANDELWAL AMIT , MOORTHY MADHU , GANDIKOTA SRINIVAS , CASTRO JOSEPH , GELATOS AVGERINOS V , KNEPFLER CHERYL , JIAN PING , FANG HONGBIN , HUANG CHAO-MING , XI MING , YANG MICHAEL X , CHUNG HUA , BYUN JEONG SOO
发明人： LAI KEN KAUNG , RAJAGOPALAN RAVI , KHANDELWAL AMIT , MOORTHY MADHU , GANDIKOTA SRINIVAS , CASTRO JOSEPH , GELATOS AVGERINOS V , KNEPFLER CHERYL , JIAN PING , FANG HONGBIN , HUANG CHAO-MING , XI MING , YANG MICHAEL X , CHUNG HUA , BYUN JEONG SOO
IPC分类号： H01L21/44
CPC分类号： H01L21/28562 , C23C16/0281 , C23C16/08 , C23C16/14 , C23C16/45525 , H01L21/28556 , H01L21/76843 , H01L21/76855 , H01L21/76856 , H01L21/7687 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： In one embodiment, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer within a process chamber, exposing the substrate to a first soak process (220) for a first tune period and depositing a nucleation layer (230) on the barrier layer by flowing a tungsten-containing precursor and a reductant into the process chamber. The method further includes exposing the substrate to a second soak process (240) for a second time period and depositing a bulk layer (250) on the nucleation layer In one example, the barrier layer contains titanium nitride and the first and second soak processes contain at least one reducing gas. The nucleation layer may be deposited by an atomic layer deposition process or a pulsed chemical vapor deposition process and the bulk layer may be deposited by a chemical vapor deposition process or a physical vapor deposition process.
摘要翻译：在一个实施例中，提供了一种在衬底上形成含钨层的方法，其包括将包含阻挡层的衬底定位在处理室内，将衬底暴露于第一调谐周期的第一浸泡工艺（220）和沉积通过使含钨前体和还原剂流入处理室中的阻挡层上的成核层（230）。该方法还包括将基板暴露于第二时间段的第二浸泡工艺（240）并在成核层上沉积体层（250）。在一个示例中，阻挡层包含氮化钛，并且第一和第二浸泡工艺包含至少一种还原气体。可以通过原子层沉积工艺或脉冲化学气相沉积工艺沉积成核层，并且通过化学气相沉积工艺或物理气相沉积工艺沉积本体层。

3. 发明申请

WO03009360B1 METHOD AND APPARATUS FOR DEPOSITING TUNGSTEN AFTER SURFACE TREATMENT TO IMPROVE FILM CHARACTERISTICS 审中-公开
标题翻译：表面处理后沉积钨铁的方法和装置，以改善膜片特性
公开(公告)号：WO03009360B1
公开(公告)日：2003-12-04
申请号：PCT/US0222487
申请日：2002-07-16
申请人： APPLIED MATERIALS INC , BYUN JEONG SOO
发明人： BYUN JEONG SOO
IPC分类号： C23C16/14 , C23C16/44 , C23C16/455 , H01L21/28 , H01L21/285 , H01L21/768
CPC分类号： C23C16/45525 , C23C16/0281 , C23C16/14 , C23C16/45529 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： A method and system to form a refractory metal layer over a substrate includes introduction of a reductant, such as PH3 or B2H6, followed by introduction of a tungsten containing compound, such as WF6, to form a tungsten layer. It is believed that the reductant reduces the fluorine content of the tungsten layer while improving the step coverage and resistivity of the tungsten layer. It is believed that the improved characteristics of the tungsten film are attributable to the chemical affinity between the reductants and the tungsten containing compound. The chemical affinity provides better surface mobility of the adsorbed chemical species and better reduction of WF6 at the nucleation stage of the tungsten layer. The method can further include sequentially introducing a reductant, such as PH3 or B2H6, and a tungsten containing compound to deposit a tungsten layer. The formed tungsten layer can be used as a nucleation layer followed by bulk deposition of a tungsten layer utilizing standard CVD techniques. Alternatively, the formed tungsten layer can be used to fill an aperture.
摘要翻译：在衬底上形成难熔金属层的方法和系统包括引入还原剂如PH3或B2H6，然后引入含钨化合物如WF 6，形成钨层。据信，还原剂降低了钨层的氟含量，同时改善了钨层的阶梯覆盖和电阻率。据信，钨膜的改进的特性可归因于还原剂和含钨化合物之间的化学亲和力。化学亲和性提供吸附的化学物质的更好的表面迁移率，并且在钨层的成核阶段更好地还原WF6。该方法可以进一步包括顺序地引入还原剂，例如PH 3或B 2 H 6，以及含钨化合物以沉积钨层。形成的钨层可以用作成核层，随后使用标准CVD技术大量沉积钨层。或者，形成的钨层可用于填充孔。

4. 发明申请

WO2005024094A2 IN-SITU-ETCH-ASSISTED HDP DEPOSITION USING SIF4 AND HYDROGEN 审中-公开
标题翻译：使用SIF4和氢气进行现场辅助的HDP沉积
公开(公告)号：WO2005024094A2
公开(公告)日：2005-03-17
申请号：PCT/US2004026610
申请日：2004-08-16
申请人： APPLIED MATERIALS INC , KARIM ZIAUL M , LI DONGQUIN , BYUN JEONG SOO , PHAM THANH N
发明人： KARIM ZIAUL M , LI DONGQUIN , BYUN JEONG SOO , PHAM THANH N
IPC分类号： C23C16/04 , C23C16/40 , C23C16/50 , H01L21/316
CPC分类号： C23C16/402 , C23C16/045 , H01L21/02164 , H01L21/02274 , H01L21/31612 , H01L21/76837
摘要： A process is provided for depositing an undoped silicon oxide film on a substrate disposed in a process chamber. A process gas that includes SiF4, H2, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 10 ions/cm is formed from the process gas. The undoped silicon oxide film is deposited over the substrate with the plasma using a process that has simultaneous deposition and sputtering components. A temperature of the substrate during such depositing is greater than 450 °C.
摘要翻译：提供了一种用于在设置在处理室中的衬底上沉积未掺杂的氧化硅膜的工艺。包括SiF4，H2，硅源和氧化性气体反应物的工艺气体流入处理室。从工艺气体形成具有至少10 11 / cm 3离子密度的等离子体。使用具有同时沉积和溅射组分的工艺，用等离子体在衬底上沉积未掺杂的氧化硅膜。在这种沉积过程中，衬底的温度大于450℃。

5. 发明申请

WO03001590A3 SYSTEM AND METHOD TO FORM A COMPOSITE FILM STACK UTILIZING SEQUENTIAL DEPOSITION TECHNIQUES 审中-公开
标题翻译：使用顺序沉积技术形成复合膜片的系统和方法
公开(公告)号：WO03001590A3
公开(公告)日：2003-02-20
申请号：PCT/US0219481
申请日：2002-06-20
申请人： APPLIED MATERIALS INC
发明人： MAK ALFRED W , CHANG MEI , BYUN JEONG SOO , CHUNG HUA , SINHA ASHOK , KORI MORIS
IPC分类号： C23C16/30 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/768 , H01L23/52
CPC分类号： H01L21/76846 , H01L21/28562
摘要： A system and method to form a stacked barrier layer for copper contacts formed on a substrate. The substrate is serially exposed to first and second reactive gases to form an adhesion layer (58). Then, the adhesion layer is serially exposed to third and fourth reactive gases to form a barrier layer (60) adjacent to the adhesion layer. This is followed by deposition of a copper layer adjacent to the barrier layer.
摘要翻译：一种在基板上形成用于铜触点的层叠阻挡层的系统和方法。衬底连续地暴露于第一和第二反应气体以形成粘合层（58）。然后，粘附层连续地暴露于第三和第四反应气体，以形成邻近粘合层的阻挡层（60）。随后在阻挡层附近沉积铜层。

6. 发明申请

WO0201628A3 FORMATION OF BORIDE BARRIER LAYERS USING CHEMISORPTION TECHNIQUES 审中-公开
标题翻译：使用化学技术形成硼化物屏障层
公开(公告)号：WO0201628A3
公开(公告)日：2002-04-11
申请号：PCT/US0120310
申请日：2001-06-26
申请人： APPLIED MATERIALS INC
发明人： BYUN JEONG SOO , MAK ALFRED W
IPC分类号： C23C16/38 , C23C16/44 , C23C16/455 , H01L21/285 , H01L21/768
CPC分类号： C23C16/45529 , C23C16/38 , C23C16/45531 , C23C16/45553 , H01L21/28562 , H01L21/76843 , H01L21/76846
摘要： A method of forming a boride layer for integrated circuit fabrication is disclosed. In one embodiment, the boride layer is formed by chemisorbing monolayers of a boron-containing compound (305) and one refractory metal compound (307) onto a substrate. In an alternate embodiment, the boride layer has a composite structure. The composite boride layer structure (409) comprises two or more refractory metals (M1, M2). The composite boride layer is formed by sequentially chemisorbing monolayers of a boron compound (405) and two or more refractory metal compounds (407) on a substrate.
摘要翻译：公开了形成用于集成电路制造的硼化物层的方法。在一个实施方案中，硼化物层通过将含硼化合物（305）和一种难熔金属化合物（307）的单层化学吸附到基底上而形成。在替代实施例中，硼化物层具有复合结构。复合硼化物层结构（409）包括两种或更多种难熔金属（M1，M2）。复合硼化物层通过在基底上依次化学吸附硼化合物（405）和两种或更多种难熔金属化合物（407）的单层而形成。

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