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1. 发明申请

WO2006012112A3 ELECTROCHEMICAL PLATING CELL WITH AN AUXILIARY ELECTRODE IN AN ISOLATED ANOLYTE COMPARTMENT 审中-公开
标题翻译：电化学镀膜电池与分离电极在独立的分离室
公开(公告)号：WO2006012112A3
公开(公告)日：2006-06-22
申请号：PCT/US2005021894
申请日：2005-06-20
申请人： APPLIED MATERIALS INC , KOVARSKY NICOLAY , CHANG ANZHONG , SINGH SARAVJEET , WANG YOU , DUKOVIC JOHN O
发明人： KOVARSKY NICOLAY , CHANG ANZHONG , SINGH SARAVJEET , WANG YOU , DUKOVIC JOHN O
IPC分类号： C25D7/12 , C25B9/08 , C25D17/00 , C25D19/00 , H01L21/288 , H01L21/768
CPC分类号： H01L21/2885 , C25D7/123 , C25D17/001 , C25D17/002 , C25D21/22 , H01L21/76843 , H01L21/76873 , H01L21/76877
摘要： An apparatus and method for plating a metal layer onto a substrate is provided. A catholyte volume is positioned to receive a substrate for plating. An anolyte volume having one or more anode segments positioned therein is ionically separated from the catholyte volume. An auxiliary volume having an auxiliary electrode positioned therein is provided to be electrically isolated from the anolyte fluid volume and in ionic communication with the catholyte volume. A method of plating includes a first stage of plating a thin metal seed uniformly in the center and near the edges of the substrate by providing a current pulse from two power supplies which are in reverse electrical polarity with one anode segment and the auxiliary electrode. Thereafter, gap filling of features and bulk metal plating are performed by applying a second current pulse to all anode segments.
摘要翻译：提供了将金属层电镀到基板上的装置和方法。阴极电解液体积被定位成接收用于电镀的基底。具有位于其中的一个或多个阳极段的阳极电解液体与阴极电解液体积离子地分离。提供具有位于其中的辅助电极的辅助体积以与阳极电解液体积电离并与阴极电解液体积离子连通。电镀方法包括：通过从与一个阳极段和辅助电极反向电极性的两个电源提供电流脉冲，在第一阶段中均匀地在基板的中心和边缘处电镀薄金属种子。此后，通过向所有阳极段施加第二电流脉冲来执行特征和体金属电镀的间隙填充。

2. 发明申请

WO2012173790A3 HYBRID LASER AND PLASMA ETCH WAFER DICING USING SUBSTRATE CARRIER 审中-公开
标题翻译：使用基板载体的混合激光和等离子体蚀刻波
公开(公告)号：WO2012173790A3
公开(公告)日：2013-03-14
申请号：PCT/US2012040289
申请日：2012-05-31
申请人： APPLIED MATERIALS INC , SINGH SARAVJEET , EATON BRAD , KUMAR AJAY , LEI WEI-SHENG , HOLDEN JAMES M , YALAMANCHILI MADHAVA RAO , EGAN TODD J
发明人： SINGH SARAVJEET , EATON BRAD , KUMAR AJAY , LEI WEI-SHENG , HOLDEN JAMES M , YALAMANCHILI MADHAVA RAO , EGAN TODD J
IPC分类号： H01L21/301
CPC分类号： H01L21/67069 , B23K26/0624 , B23K26/064 , B23K26/36 , B23K26/364 , B23K26/40 , B23K26/402 , B23K2203/172 , B23K2203/50 , H01L21/3065 , H01L21/3081 , H01L21/67092 , H01L21/67207 , H01L21/6836 , H01L21/68707 , H01L21/78 , H01L2221/68327 , H01L2221/68377
摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The semiconductor wafer is supported by a substrate carrier. The mask is then patterned with a laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the integrated circuits while supported by the substrate carrier.
摘要翻译：对半导体晶片的切割方法，具有多个集成电路的各晶片进行说明。一种方法包括在半导体晶片上形成掩模，掩模由覆盖并保护集成电路的层组成。半导体晶片由衬底载体支撑。然后用激光划线工艺对掩模进行构图，以提供具有间隙的图案化掩模，暴露集成电路之间的半导体晶片的区域。然后通过图案化掩模中的间隙蚀刻半导体晶片，以在由衬底载体支撑的同时对集成电路进行分离。

3. 发明申请

WO2012173768A3 WATER SOLUBLE MASK FOR SUBSTRATE DICING BY LASER AND PLASMA ETCH 审中-公开
标题翻译：用于基材的水溶性掩模用激光和等离子体蚀刻
公开(公告)号：WO2012173768A3
公开(公告)日：2013-02-21
申请号：PCT/US2012039746
申请日：2012-05-25
申请人： APPLIED MATERIALS INC , LEI WEI-SHENG , SINGH SARAVJEET , YALAMANCHILI MADHAVA RAO , EATON BRAD , KUMAR AJAY
发明人： LEI WEI-SHENG , SINGH SARAVJEET , YALAMANCHILI MADHAVA RAO , EATON BRAD , KUMAR AJAY
IPC分类号： H01L21/301
CPC分类号： H01L21/67207 , B23K26/0624 , B23K26/064 , B23K26/364 , B23K26/40 , B23K2201/40 , B23K2203/172 , B23K2203/50 , H01L21/30655 , H01L21/3081 , H01L21/67069 , H01L21/6836 , H01L21/78 , H01L2221/68327
摘要： Methods of dicing substrates having a plurality of ICs. A method includes forming a mask comprising a water soluble material layer over the semiconductor substrate. The mask is patterned with a femtosecond laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the substrate between the ICs. The substrate is then etched through the gaps in the patterned mask to singulate the IC and the water soluble material layer washed off.
摘要翻译：具有多个IC的切割基板的方法。一种方法包括在半导体衬底上形成包含水溶性材料层的掩模。用飞秒激光划线工艺对掩模进行图案化以提供具有间隙的图案化掩模。图案化使IC之间的衬底的区域暴露。然后将衬底通过图案化掩模中的间隙进行蚀刻，以对IC进行分离，并洗涤掉水溶性材料层。

4. 发明申请

WO2009117565A3 METHOD AND APPARATUS OF A SUBSTRATE ETCHING SYSTEM AND PROCESS 审中-公开
标题翻译：基底蚀刻系统和方法的方法和设备
公开(公告)号：WO2009117565A3
公开(公告)日：2009-11-12
申请号：PCT/US2009037647
申请日：2009-03-19
申请人： APPLIED MATERIALS INC , PAMARTHY SHARMA V , FARR JON C , SIRAJUDDIN KHALID , GOLD EZRA R , CRUSE JAMES P , OLSZEWSKI SCOTT , NANGOY ROY C , SINGH SARAVJEET , BUCHBERGER DOUGLAS A , LEE JARED A , ZHANG CHUNLEI
发明人： PAMARTHY SHARMA V , FARR JON C , SIRAJUDDIN KHALID , GOLD EZRA R , CRUSE JAMES P , OLSZEWSKI SCOTT , NANGOY ROY C , SINGH SARAVJEET , BUCHBERGER DOUGLAS A , LEE JARED A , ZHANG CHUNLEI
IPC分类号： H01L21/3065
CPC分类号： H01L21/30655 , Y10T137/0318 , Y10T137/87169
摘要： Embodiments of the invention relate to a substrate etching system and process. In one embodiment, a method may include depositing material on the substrate during a deposition process, etching a first layer of the substrate during a first etch process, and etching a second layer of the substrate during a second etch process, wherein a first bias power is applied to the substrate during the first process, and wherein a second bias power is applied to the substrate during the second etch process. In another embodiment, a system may include a gas delivery system containing a first gas panel for supplying a first gas to a chamber, a second gas panel for supplying a second gas to the chamber, and a plurality of flow controllers for directing the gases to the chamber to facilitate rapid gas transitioning between the gases to and from the chamber and the panels.
摘要翻译：本发明的实施例涉及衬底蚀刻系统和处理。在一个实施例中，一种方法可以包括在沉积工艺期间在衬底上沉积材料，在第一蚀刻工艺期间蚀刻衬底的第一层，并且在第二蚀刻工艺期间蚀刻衬底的第二层，其中第一偏置功率在第一工艺期间施加到衬底，并且其中在第二蚀刻工艺期间将第二偏压功率施加到衬底。在另一个实施例中，系统可以包括气体输送系统，该气体输送系统包含用于向腔室供应第一气体的第一气体面板，用于向腔室供应第二气体的第二气体面板，以及用于将气体引导至腔室的多个流量控制器该室有助于在进出室和面板的气体之间的快速气体转换。

5. 发明申请

WO2012166265A2 APPARATUS AND METHODS FOR DRY ETCH WITH EDGE, SIDE AND BACK PROTECTION 审中-公开
标题翻译：具有边缘，侧面和背面保护的干燥蚀刻的装置和方法
公开(公告)号：WO2012166265A2
公开(公告)日：2012-12-06
申请号：PCT/US2012034922
申请日：2012-04-25
申请人： APPLIED MATERIALS INC , SINGH SARAVJEET , SCOTT GRAEME JAMIESON , SABHARWAL AMITABH , KUMAR AJAY
发明人： SINGH SARAVJEET , SCOTT GRAEME JAMIESON , SABHARWAL AMITABH , KUMAR AJAY
IPC分类号： H01L21/3065
CPC分类号： H01J37/32082 , H01J37/32477 , H01J37/32651
摘要： Embodiments of the present invention generally relate to a method and apparatus for plasma etching substrates and, more specifically, to a method and apparatus with protection for edges, sides and backs of the substrates being processed. Embodiments of the present invention provide an edge protection plate with an aperture smaller in size than a substrate being processed, wherein the edge protection plate may be positioned in close proximity to the substrate in a plasma chamber. The edge protection plate overlaps edges and/or sides on the substrate to provide protection to reflective coatings on the edge, sides, and back of the substrate.
摘要翻译：本发明的实施例一般涉及用于等离子体蚀刻基板的方法和装置，更具体地说，涉及一种对被处理的基板的边缘，侧面和背面进行保护的方法和装置。本发明的实施例提供了一种边缘保护板，该边缘保护板的尺寸小于被加工的基板，其中边缘保护板可以位于等离子体室中靠近基板的位置。边缘保护板与基板上的边缘和/或侧面重叠以对基板的边缘，侧面和背面上的反射涂层提供保护。

6. 发明申请

WO2006091937A3 AUXILIARY ELECTRODE ENCASED IN CATION EXCHANGE MEMBRANE TUBE FOR ELECTROPLATING CELL 审中-公开
标题翻译：辅助电极用于电镀细胞的交换膜管
公开(公告)号：WO2006091937A3
公开(公告)日：2009-04-23
申请号：PCT/US2006006839
申请日：2006-02-24
申请人： APPLIED MATERIALS INC , SINGH SARAVJEET , HAFEZI HOOMAN , BIRANG MANOOCHER , ROSENFELD ARON , BEHNKE JOSEPH
发明人： SINGH SARAVJEET , HAFEZI HOOMAN , BIRANG MANOOCHER , ROSENFELD ARON , BEHNKE JOSEPH
IPC分类号： C25D17/00 , C25D7/12 , C25D17/10 , C25D17/12 , C25D21/00 , C25D21/12
CPC分类号： C25D17/10 , C25D5/04 , C25D5/18 , C25D7/123 , C25D17/001 , C25D17/002 , C25D17/007 , C25D17/02 , H01L21/2885
摘要： A method and apparatus for plating a metal onto a substrate. One embodiment of the invention provides an apparatus for electrochemically plating a substrate. The apparatus comprises a fluid basin configured to retain a plating solution therein, an anode assembly disposed in the fluid basin, a substrate support member configured to support the substrate and contact the substrate electrically, and an encased auxiliary electrode assembly disposed in the fluid basin. The encased auxiliary electrode assembly generally comprises an auxiliary electrode disposed in a protective tube.
摘要翻译：一种用于将金属电镀到基底上的方法和装置。本发明的一个实施例提供了一种用于对基底进行电化学电镀的装置。该装置包括被配置为在其中保持电镀液的流体池，设置在流体池中的阳极组件，被配置为支撑基板并电连接基板的基板支撑构件以及设置在流体池中的封装辅助电极组件。包封的辅助电极组件通常包括设置在保护管中的辅助电极。

7. 发明申请

WO2012166264A3 DYNAMIC ION RADICAL SIEVE AND ION RADICAL APERTURE FOR AN INDUCTIVELY COUPLED PLASMA (ICP) REACTOR 审中-公开
标题翻译：用于感应耦合等离子体（ICP）反应器的动态离子光栅和离子射线孔
公开(公告)号：WO2012166264A3
公开(公告)日：2013-01-24
申请号：PCT/US2012034915
申请日：2012-04-25
申请人： APPLIED MATERIALS INC , SINGH SARAVJEET , SCOTT GRAEME JAMIESON , KUMAR AJAY
发明人： SINGH SARAVJEET , SCOTT GRAEME JAMIESON , KUMAR AJAY
IPC分类号： H01L21/3065
CPC分类号： H01J37/321 , H01J37/32623 , H01J37/32633 , H01J2237/334
摘要： Embodiments described herein provide apparatus and methods of etching a substrate using an ion etch chamber having a movable aperture. The ion etch chamber has a chamber body enclosing a processing region, a substrate support disposed in the processing region and having a substrate receiving surface, a plasma source disposed at a wall of the chamber body facing the substrate receiving surface, an ion-radical shield disposed between the plasma source and the substrate receiving surface, and a movable aperture member between the ion-radical shield and the substrate receiving surface. The movable aperture member is actuated by a lift assembly comprising a lift ring and lift supports from the lift ring to the aperture member. The ion-radical shield is supported by shield supports disposed through the aperture member. The aperture size, shape, and/or central axis location may be changed using inserts.
摘要翻译：本文描述的实施例提供了使用具有可移动孔径的离子蚀刻室蚀刻衬底的设备和方法。离子蚀刻室具有包围处理区域的室主体，设置在处理区域中并具有基板接收表面的基板支撑件，设置在与主体接收表面相对的室主体的壁处的等离子体源，离子基屏蔽设置在等离子体源和基板接收表面之间，以及位于离子基屏蔽和基板接收表面之间的可移动孔径构件。可移动孔径构件由包括提升环的提升组件和从提升环提升到孔径构件的提升支撑件致动。离子基屏蔽由通过孔径构件设置的屏蔽支撑件支撑。孔径尺寸，形状和/或中心轴位置可以使用插入来改变。

8. 发明申请

WO2012173770A2 MULTI-STEP AND ASYMMETRICALLY SHAPED LASER BEAM SCRIBING 审中-公开
标题翻译：多步和不对称形状的激光束
公开(公告)号：WO2012173770A2
公开(公告)日：2012-12-20
申请号：PCT/US2012039753
申请日：2012-05-25
申请人： APPLIED MATERIALS INC , LEI WEI-SHENG , EATON BRAD , YALAMANCHILI MADHAVA RAO , SINGH SARAVJEET , KUMAR AJAY , HOLDEN JAMES M
发明人： LEI WEI-SHENG , EATON BRAD , YALAMANCHILI MADHAVA RAO , SINGH SARAVJEET , KUMAR AJAY , HOLDEN JAMES M
IPC分类号： H01L21/78 , H01L21/301
CPC分类号： H01L21/78 , B23K26/0624 , B23K26/364 , B23K26/40 , B23K2203/172 , B23K2203/42 , B23K2203/50 , H01L21/3065 , H01L21/30655 , H01L21/67207
摘要： Methods of dicing substrates by both laser scribing and plasma etching. A method includes laser ablating material layers, the ablating leading with a first irradiance and following with a second irradiance, lower than the first. Multiple passes of a beam adjusted to have different fluence level or multiple laser beams having various fluence levels may be utilized to ablate mask and IC layers to expose a substrate with the first fluence level and then clean off redeposited materials from the trench bottom with the second fluence level. A laser scribe apparatus employing a beam splitter may provide first and second beams of different fluence from a single laser.
摘要翻译：通过激光划线和等离子体蚀刻来切割基板的方法。一种方法包括激光烧蚀材料层，具有第一辐照度的烧蚀导线，并且具有低于第一辐照度的第二辐照度。调整为具有不同注量级的光束的多次通过或具有各种注量级的多个激光束可以用于消除掩模和IC层以暴露具有第一注量级的衬底，然后用第二通量级从沟槽底部清除再沉积的材料注量水平使用分束器的激光划片装置可以从单个激光器提供不同注量的第一和第二光束。

9. 发明申请

WO2012173760A2 LASER AND PLASMA ETCH WAFER DICING USING WATER-SOLUBLE DIE ATTACH FILM 审中-公开
标题翻译：激光和等离子切割使用水溶性电缆连接薄膜
公开(公告)号：WO2012173760A2
公开(公告)日：2012-12-20
申请号：PCT/US2012039209
申请日：2012-05-23
申请人： APPLIED MATERIALS INC , LEI WEI-SHENG , YALAMANCHILI MADHAVA RAO , EATON BRAD , SINGH SARAVJEET , KUMAR AJAY
发明人： LEI WEI-SHENG , YALAMANCHILI MADHAVA RAO , EATON BRAD , SINGH SARAVJEET , KUMAR AJAY
IPC分类号： H01L21/301
CPC分类号： H01L21/67069 , B23K26/0624 , B23K26/364 , B23K26/40 , B23K2203/172 , B23K2203/50 , H01L21/3065 , H01L21/3081 , H01L21/67207 , H01L21/6836 , H01L21/78 , H01L2221/68327
摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer. The semiconductor wafer is disposed on a water-soluble die attach film. The mask covers and protects the integrated circuits. The mask is patterned with a laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to form singulated integrated circuits. The water-soluble die attach film is then patterned with an aqueous solution.
摘要翻译：对半导体晶片的切割方法，具有多个集成电路的各晶片进行说明。一种方法包括在半导体晶片上形成掩模。半导体晶片设置在水溶性芯片附着膜上。面罩覆盖并保护集成电路。用激光划线工艺对掩模进行图案化以提供具有间隙的图案化掩模。图案化使得集成电路之间的半导体晶片的区域露出。然后通过图案化掩模中的间隙蚀刻半导体晶片，以形成单独的集成电路。然后用水溶液对水溶性贴片膜进行构图。

10. 发明申请

WO2013009575A3 WAFER DICING USING HYBRID SPLIT-BEAM LASER SCRIBING PROCESS WITH PLASMA ETCH 审中-公开
标题翻译：使用混合分光光束激光扫描工艺与等离子体蚀刻
公开(公告)号：WO2013009575A3
公开(公告)日：2013-05-10
申请号：PCT/US2012045603
申请日：2012-07-05
申请人： APPLIED MATERIALS INC , LEI WEI-SHENG , EATON BRAD , YALAMANCHILI MADHAVA RAO , SINGH SARAVJEET , KUMAR AJAY , IYER APARNA
发明人： LEI WEI-SHENG , EATON BRAD , YALAMANCHILI MADHAVA RAO , SINGH SARAVJEET , KUMAR AJAY , IYER APARNA
IPC分类号： H01L21/78 , H01L21/301 , H01L21/3065
CPC分类号： H01L21/3065 , B23K26/00 , B23K26/0006 , B23K26/0057 , B23K26/0624 , B23K26/0661 , B23K26/0676 , B23K26/083 , B23K26/0869 , B23K26/361 , B23K26/40 , B23K37/047 , B23K2203/50 , B23K2203/56 , H01L21/67207 , H01L21/78
摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer. The mask is composed of a layer covering and protecting the integrated circuits. The mask is patterned with a split-beam laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the integrated circuits.
摘要翻译：对半导体晶片的切割方法，具有多个集成电路的各晶片进行说明。一种方法包括在半导体晶片上形成掩模。掩模由覆盖和保护集成电路的层组成。掩模用分光束激光划线工艺图案化，以提供具有间隙的图案化掩模。图案化使得集成电路之间的半导体晶片的区域露出。然后通过图案化掩模中的间隙蚀刻半导体晶片，以对集成电路进行分离。

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