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1. 发明申请

WO2008100718A3 SUBSTRATE HEATING METHOD AND APPARATUS 审中-公开
标题翻译：基板加热方法和装置
公开(公告)号：WO2008100718A3
公开(公告)日：2008-10-23
申请号：PCT/US2008052711
申请日：2008-01-31
申请人： APPLIED MATERIALS INC , CUI ANQING , SEUTTER SEAN M , SMITH JACOB W , IYER R SURYANARAYANAN
发明人： CUI ANQING , SEUTTER SEAN M , SMITH JACOB W , IYER R SURYANARAYANAN
IPC分类号： H05B3/68 , G03F7/20 , H01L21/00 , H05B3/08
CPC分类号： H01L21/67103 , H01L21/67109 , H01L21/6875
摘要： Embodiments of substrate heating methods and apparatus are provided herein. In one embodiment, a substrate heater is provided including a heater plate having a top surface and an opposing bottom surface, a recess formed in the top surface, the recess having a feature having an upper surface for supporting a substrate, wherein the depth from a bottom surface of the recess to the upper surface of the feature is at least 5 mils. One or more pads may be disposed in the recess for supporting a substrate. The heater plate may have a thickness of about 19 mm. One or more indentations may be formed in the bottom surface of the recess for altering the rate of heat transfer to a portion of a substrate disposed above the indentation during processing. The heater plate may be utilized in a process chamber for performing heat-assisted processes.
摘要翻译：本文提供了基板加热方法和装置的实施例。在一个实施例中，提供了一种衬底加热器，其包括具有顶表面和相对底表面的加热器板，在顶表面中形成的凹部，该凹部具有用于支撑衬底的上表面的特征，其中，该凹槽的底表面至该特征的上表面至少为5密耳。一个或多个垫可以设置在凹槽中用于支撑基底。加热器板可以具有约19mm的厚度。可以在凹部的底表面中形成一个或多个凹口，用于改变在处理期间设置在压痕之上的衬底的一部分的热传递速率。加热器板可以用在用于执行热辅助工艺的处理室中。

2. 发明申请

WO2010123877A3 CVD APPARATUS FOR IMPROVED FILM THICKNESS NON-UNIFORMITY AND PARTICLE PERFORMANCE 审中-公开
标题翻译：改善薄膜厚度的CVD装置非均匀性和颗粒性能
公开(公告)号：WO2010123877A3
公开(公告)日：2011-01-20
申请号：PCT/US2010031723
申请日：2010-04-20
申请人： APPLIED MATERIALS INC , TRAN BINH , CUI ANQING , HWANG BERNARD L , NGUYEN SON T , NGUYEN ANH N , SEUTTER SEAN M , TAO XIANZHI
发明人： TRAN BINH , CUI ANQING , HWANG BERNARD L , NGUYEN SON T , NGUYEN ANH N , SEUTTER SEAN M , TAO XIANZHI
IPC分类号： H01L21/205
CPC分类号： H01L21/6719 , C23C16/4401 , C23C16/4409 , C23C16/45512 , C23C16/45561 , H01L21/68742 , H01L21/68785
摘要： Embodiments of the invention provide improved apparatus for depositing layers on substrates, such as by chemical vapor deposition (CVD). The inventive apparatus disclosed herein may advantageously facilitate one or more of depositing films having reduced film thickness non-uniformity within a given process chamber, improved particle performance (e.g., reduced particles on films formed in the process chamber), chamber-to-chamber performance matching amongst a plurality of process chambers, and improved process chamber serviceability.
摘要翻译：本发明的实施例提供了用于在衬底上沉积层（例如通过化学气相沉积（CVD））的改进的装置。本文公开的本发明的装置可以有利地促进一种或多种在给定的处理室内具有减小的膜厚度不均匀的沉积膜，改善的颗粒性能（例如，在处理室中形成的膜上的还原颗粒），室到室的性能在多个处理室之间进行匹配，以及改进的处理室可维护性。

3. 发明申请

WO2013003266A3 SUBSTRATE SUPPORT WITH SUBSTRATE HEATER AND SYMMETRIC RF RETURN 审中-公开
标题翻译：基板加热器和对称RF返回基板支持
公开(公告)号：WO2013003266A3
公开(公告)日：2013-03-21
申请号：PCT/US2012043967
申请日：2012-06-25
申请人： APPLIED MATERIALS INC , CHANG YU , TZU GWO-CHUAN , CUI ANQING , KUANG WILLIAM W , CUVALCI OLKAN
发明人： CHANG YU , TZU GWO-CHUAN , CUI ANQING , KUANG WILLIAM W , CUVALCI OLKAN
IPC分类号： H01L21/205 , H01L21/3065 , H01L21/683
CPC分类号： F27B17/0025 , H01J37/32091 , H01J37/32715 , H01L21/67103 , H01L21/67248
摘要： Apparatus for processing a substrate are provided herein. In some embodiments, a substrate support includes a substrate support surface and a shaft; an RF electrode disposed in the substrate support proximate the substrate support surface to receive RF current from an RF source; a heater disposed proximate the substrate support surface to provide heat to a substrate when disposed on the substrate support surface, the heater having one or more conductive lines to provide power to the heater; a thermocouple to measure the temperature of a substrate when disposed on the substrate support surface; and a conductive element having an interior volume with the one or more conductive lines and the thermocouple disposed through the interior volume, the conductive element coupled to the RF electrode and having an electric field of about zero in the interior volume when RF current is provided to the conductive element.
摘要翻译：这里提供了用于处理衬底的设备。在一些实施例中，衬底支撑件包括衬底支撑表面和轴; RF电极，所述RF电极设置在靠近所述衬底支撑表面的所述衬底支撑件中以接收来自RF源的RF电流; 加热器，所述加热器设置在所述基板支撑表面附近，以当设置在所述基板支撑表面上时向基板提供热量，所述加热器具有一个或多个导电线以向所述加热器提供功率; 当布置在基板支撑表面上时测量基板的温度的热电偶; 以及具有内部容积的导电元件，其中所述一个或多个导电线和所述热电偶设置为穿过所述内部容积，所述导电元件联接至所述RF电极并且当向所述RF电极提供RF电流时在所述内部容积中具有大约零的电场导电元件。

4. 发明申请

WO2004032187A3 MULTI-ZONE RESITIVE HEATER 审中-公开
标题翻译：多区耐热加热器
公开(公告)号：WO2004032187A3
公开(公告)日：2004-07-01
申请号：PCT/US0329689
申请日：2003-09-19
申请人： APPLIED MATERIALS INC
发明人： HO HENRY , CUI ANQING , YUAN XIAOXIONG
IPC分类号： H01L21/00 , C23C16/458 , H05B3/28
CPC分类号： H01L21/67248 , H01L21/67103 , H01L21/67109
摘要： A heating apparatus including a stage comprising a surface having an area to support a wafer and a body, a shaft coupled to the stage, and a first and a second heating element. The first heating element is disposed within a first plane of the body of the stage. The second heating element is disposed within a second plane of the body of the stage at a greater distance from the surface of the stage than the first heating element, and the second heating element is offset from the first heating element in a plane substantially parallel to at least one of the first plane and the second plane.
摘要翻译：一种加热装置，包括一个台，该平台包括具有支撑晶片和主体的区域的表面，联接到该台的轴以及第一和第二加热元件。第一加热元件设置在台的主体的第一平面内。所述第二加热元件设置在所述台体的第二平面内，距离所述台的表面比所述第一加热元件更远的距离处，并且所述第二加热元件在与所述第一加热元件基本平行的平面中偏离所述第一加热元件第一平面和第二平面中的至少一个。

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