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1. 发明申请

WO2010144761A3 IONIZED PHYSICAL VAPOR DEPOSITION FOR MICROSTRUCTURE CONTROLLED THIN FILM DEPOSITION 审中-公开
标题翻译：用于微结构控制薄膜沉积的离子化物理气相沉积
公开(公告)号：WO2010144761A3
公开(公告)日：2011-03-10
申请号：PCT/US2010038249
申请日：2010-06-11
申请人： APPLIED MATERIALS INC , BROWN KARL , RITCHIE ALAN , PIPITONE JOHN A , HOFFMAN DANIEL J , RUI YING , OLGADO DONALD J K
发明人： BROWN KARL , RITCHIE ALAN , PIPITONE JOHN A , HOFFMAN DANIEL J , RUI YING , OLGADO DONALD J K
IPC分类号： H01L31/042 , H01L31/18
CPC分类号： C23C14/354 , C23C14/3471 , H01J37/32091 , H01J37/32165 , H01J37/3244 , H01J37/32449
摘要： Methods of processing a substrate in a PVD chamber comprising a target, a substrate and a process gas at a pressure sufficient to cause ionization of a substantial portion of species sputtered from the target are described. A capacitively coupled high density plasma is maintained by applying very high frequency power to the target. Sputtered material is ionized in the plasma and accelerated toward the substrate by a high frequency bias power applied to the substrate. The microstructure of the resultant film is controlled by modifying one or more of the pressure and the high frequency bias power.
摘要翻译：描述了在包括靶，衬底和工艺气体的PVD室中处理衬底的方法，其压力足以引起从靶溅射出的大部分物质的电离。通过对目标施加非常高频的功率来维持电容耦合的高密度等离子体。溅射的材料在等离子体中电离并通过施加到衬底的高频偏置功率朝向衬底加速。通过修改压力和高频偏压功率中的一个或多个来控制所得膜的微观结构。

2. 发明申请

WO2012036936A3 METHODS FOR DEPOSITING METAL IN HIGH ASPECT RATIO FEATURES 审中-公开
标题翻译：用于在高比例特征中沉积金属的方法
公开(公告)号：WO2012036936A3
公开(公告)日：2012-05-31
申请号：PCT/US2011050507
申请日：2011-09-06
申请人： APPLIED MATERIALS INC , BROWN KARL , RITCHIE ALAN , PIPITONE JOHN , RUI YING , HOFFMAN DANIEL J
发明人： BROWN KARL , RITCHIE ALAN , PIPITONE JOHN , RUI YING , HOFFMAN DANIEL J
IPC分类号： C23C14/40 , C23C14/02 , C23C14/58
CPC分类号： C23C14/046 , C23C14/185 , C23C14/3492
摘要： Methods of depositing metal in high aspect ratio features are provided herein. In some embodiments, a method of processing a substrate includes applying RF power at VHF frequency to a target comprising metal disposed in the PVD chamber above the substrate to form a plasma from a plasma-forming gas, sputtering metal atoms from the target using the plasma while maintaining a first pressure in the PVD chamber sufficient to ionize a predominant portion of the sputtered metal atoms, depositing the ionized metal atoms on a bottom surface of the opening and on a first surface of the substrate, applying a first RF power to redistribute at least some of the deposited metal atoms from the bottom surface and upper surface to sidewalls of the opening, and repeating the deposition the redistribution processes until a first layer of metal is deposited on substantially all surfaces of the opening.
摘要翻译：本文提供了以高纵横比特征沉积金属的方法。在一些实施例中，处理衬底的方法包括将VHF频率的RF功率施加到包括设置在衬底上的PVD室中的金属的靶以形成来自等离子体形成气体的等离子体，使用等离子体溅射来自靶的金属原子同时保持PVD室中的第一压力足以电离溅射的金属原子的主要部分，将离子化的金属原子沉积在开口的底表面上并在衬底的第一表面上，施加第一RF功率以在至少一些沉积的金属原子从开口的底表面和上表面到侧壁，并且重新沉积重新分布过程，直到第一金属层沉积在开口的基本上所有的表面上。

3. 发明申请

WO2011139574A3 HYDROTHERMAL SYNTHESIS OF ACTIVE MATERIALS AND IN SITU SPRAYING DEPOSITION FOR LITHIUM ION BATTERY 审中-公开
标题翻译：活性材料的氢热合成和锂离子电池的喷涂沉积
公开(公告)号：WO2011139574A3
公开(公告)日：2012-04-05
申请号：PCT/US2011033304
申请日：2011-04-20
申请人： APPLIED MATERIALS INC , YANG LU , BOLANDI HOOMAN , BROWN KARL , PEBENITO VICTOR , OLGADO DONALD J K
发明人： YANG LU , BOLANDI HOOMAN , BROWN KARL , PEBENITO VICTOR , OLGADO DONALD J K
IPC分类号： H01M4/139 , H01M4/48 , H01M4/58 , H01M10/0525
CPC分类号： C23C4/121 , C23C4/123 , C23C26/02 , H01M4/0419 , H01M4/0421 , H01M4/139 , H01M4/625 , Y02E60/122 , Y02P70/54
摘要： A method and apparatus for forming an electrochemical layer of a lithium ion battery is provided. A precursor mixture in a carrying medium is activated in a reactor chamber by application of energy to synthesize active materials. The activated precursor mixture is then spray deposited on a substrate. A binder and conductive materials may be blended, or sprayed separately, with the nano- or micro-crystals as they deposit on the surface to enhance adhesion and conductivity.
摘要翻译：提供了一种用于形成锂离子电池的电化学层的方法和装置。携带介质中的前体混合物通过施加能量在反应器室中活化以合成活性材料。然后将活化的前体混合物喷雾沉积在基底上。当粘合剂和导电材料沉积在表面上时，粘合剂和导电材料可以与纳米或微晶分别共混或喷涂，以增强粘合性和导电性。

4. 发明申请

WO2012015656A3 METHODS FOR DEPOSITING METAL IN HIGH ASPECT RATIO FEATURES 审中-公开
标题翻译：用于在高比例特征中沉积金属的方法
公开(公告)号：WO2012015656A3
公开(公告)日：2012-04-12
申请号：PCT/US2011044781
申请日：2011-07-21
申请人： APPLIED MATERIALS INC , RITCHIE ALAN , BROWN KARL , PIPITONE JOHN
发明人： RITCHIE ALAN , BROWN KARL , PIPITONE JOHN
IPC分类号： H01L21/203 , H01L21/28
CPC分类号： H01L21/76898 , C23C14/046 , C23C14/34 , C23C14/345 , C23C14/3492 , C23C14/354 , C23C16/503 , C23C16/52 , C23C16/56 , H01J37/3408 , H01J2237/3327 , H01L21/2855 , H01L21/76865 , H01L21/76873
摘要： Methods for depositing metal in high aspect ratio features formed on a substrate are provided herein. In some embodiments, a method includes applying first RF power at VHF frequency to target comprising metal disposed above substrate to form plasma, applying DC power to target to direct plasma towards target, sputtering metal atoms from target using plasma while maintaining pressure in PVD chamber sufficient to ionize predominant portion of metal atoms, depositing first plurality of metal atoms on bottom surface of opening and on first surface of substrate, applying second RF power to redistribute at least some of first plurality from bottom surface to lower portion of sidewalls of the opening, and depositing second plurality of metal atoms on upper portion of sidewalls by reducing amount of ionized metal atoms in PVD chamber, wherein first and second pluralities form a first layer deposited on substantially all surfaces of opening.
摘要翻译：本文提供了在基板上形成的高纵横比特征中沉积金属的方法。在一些实施例中，一种方法包括将VHF频率的第一RF功率应用于设置在衬底上方的金属以形成等离子体，施加直流电力以将等离子体引向目标，使用等离子体从靶中溅射金属原子，同时保持PVD室中的压力足够以电离金属原子的主要部分，在开口的底表面和衬底的第一表面上沉积第一多个金属原子，施加第二RF功率以重新分配从开口的侧壁的底表面到下部的至少一些，以及通过减少PVD室中的电离金属原子的量将第二多个金属原子沉积在侧壁的上部，其中第一和第二多个形成沉积在开口的基本上所有表面上的第一层。

5. 发明申请

WO2012122331A3 PLASMA-ASSISTED MOCVD FABRICATION OF P-TYPE GROUP III-NITRIDE MATERIALS 审中-公开
标题翻译： P型III族氮化物材料的等离子体辅助MOCVD制备
公开(公告)号：WO2012122331A3
公开(公告)日：2012-11-22
申请号：PCT/US2012028187
申请日：2012-03-08
申请人： APPLIED MATERIALS INC , BROWN KARL , GRIFFIN KEVIN , BOUR DAVID , KRYLIOUK OLGA
发明人： BROWN KARL , GRIFFIN KEVIN , BOUR DAVID , KRYLIOUK OLGA
IPC分类号： H01L21/205 , H01L21/318
CPC分类号： H01L21/0262 , C23C16/303 , C23C16/452 , C23C16/56 , H01L21/0237 , H01L21/0254 , H01L21/02579 , H01L33/007
摘要： The plasma-assisted metal-organic chemical vapor deposition (MOCVD) fabrication of a p-type group III-nitride material is described. For example, a method of fabricating a p-type group III-nitride material includes generating a nitrogen-based plasma. A nitrogen-containing species from the nitrogen-based plasma is reacted with a group III precursor and a p-type dopant precursor in a metal-organic chemical vapor deposition (MOCVD) chamber. A group III-nitride layer including p-type dopants is then formed above a substrate.
摘要翻译：描述了p型III族氮化物材料的等离子辅助金属有机化学气相沉积（MOCVD）制造。例如，制造p型III族氮化物材料的方法包括产生氮基等离子体。来自氮基等离子体的含氮物质在金属有机化学气相沉积（MOCVD）室中与III族前体和p型掺杂剂前体反应。然后在衬底上方形成包括p型掺杂剂的III族氮化物层。

6. 发明申请

WO2012122365A2 MOCVD FABRICATION OF GROUP III-NITRIDE MATERIALS USING IN-SITU GENERATED HYDRAZINE OR FRAGMENTS THERE FROM 审中-公开
标题翻译：使用原位生成的HYDRAZINE或其片段的III类氮化物材料的MOCVD制造
公开(公告)号：WO2012122365A2
公开(公告)日：2012-09-13
申请号：PCT/US2012028253
申请日：2012-03-08
申请人： APPLIED MATERIALS INC , BROWN KARL , GRIFFIN KEVIN , BOUR DAVID , KRYLIOUK OLGA
发明人： BROWN KARL , GRIFFIN KEVIN , BOUR DAVID , KRYLIOUK OLGA
IPC分类号： H01L21/205 , H01L21/318
CPC分类号： H01L21/0237 , C23C16/303 , C23C16/4488 , C23C16/452 , H01L21/02458 , H01L21/0254 , H01L21/0262
摘要： The metal-organic chemical vapor deposition (MOCVD) fabrication of group III-nitride materials using in-situ generated hydrazine or fragments there from is described. For example, a method of fabricating a group III-nitride material includes forming hydrazine in an in-situ process. The hydrazine, or fragments there from, is reacted with a group ?? precursor in a metal-organic chemical vapor deposition (MOCVD) chamber. From the reacting, a group III-nitride layer is formed above a substrate.
摘要翻译：描述了使用原位产生的肼或其碎片的III族氮化物材料的金属有机化学气相沉积（MOCVD）制造。例如，制造III族氮化物材料的方法包括在原位工艺中形成肼。肼或其中的片段与基团反应在金属有机化学气相沉积（MOCVD）室中的前体。从反应中，在衬底上形成III族氮化物层。

7. 发明申请

WO2008079722A3 NON-CONTACT PROCESS KIT 审中-公开
标题翻译：非接触式工艺包
公开(公告)号：WO2008079722A3
公开(公告)日：2009-04-16
申请号：PCT/US2007087466
申请日：2007-12-13
申请人： APPLIED MATERIALS INC , BROWN KARL , BAJAJ PUNEET
发明人： BROWN KARL , BAJAJ PUNEET
IPC分类号： F16J15/40
CPC分类号： C23C14/564 , C23C14/50 , H01L21/68735
摘要： A process kit for use in a physical vapor deposition (PVD) chamber, along with a PVD chamber having a non-contact process kit are provided. In one embodiment, a process kit includes a generally cylindrical shield that has a substantially flat cylindrical body, at least one elongated cylindrical ring extending downward from the body, and a mounting portion extending upwards from an upper surface of the body. In another embodiment, a process kit includes a generally cylindrical deposition ring. The deposition ring includes a substantially flat cylindrical body, at least one downwardly extending u-channel coupled to an outer portion of the body, an inner wall extending upward from an upper surface of an inner region of the body, and a substrate support ledge extending radially inward from the inner wall.
摘要翻译：提供了一种用于物理气相沉积（PVD）室的工艺试剂盒，以及具有非接触式工艺试剂盒的PVD室。在一个实施例中，处理套件包括大致圆柱形的屏蔽件，其具有基本平坦的圆柱形主体，从主体向下延伸的至少一个细长圆柱形环以及从主体的上表面向上延伸的安装部分。在另一个实施例中，处理套件包括大致圆柱形的沉积环。沉积环包括基本上平坦的圆柱体，至少一个向下延伸的u通道，其耦合到主体的外部部分，从主体的内部区域的上表面向上延伸的内壁，以及延伸的基板支撑凸缘从内壁径向向内。

8. 发明申请

WO02082511A3 PEDESTAL ASSEMBLY WITH ENHANCED THERMAL CONDUCTIVITY 审中-公开
标题翻译：具有增强的热导率的PEDESTAL装配
公开(公告)号：WO02082511A3
公开(公告)日：2003-02-20
申请号：PCT/US0208373
申请日：2002-03-19
申请人： APPLIED MATERIALS INC
发明人： TSAI CHENG-HSIUNG , BROWN KARL , BREZOCZKY THOMAS
IPC分类号： C23C16/458 , H01L21/00 , H01L21/683 , H01L21/687 , H01L21/68
CPC分类号： H01L21/68785 , C23C16/4586 , H01L21/67103 , H01L21/6833 , Y10T29/41
摘要： A pedestal assembly for supporting a substrate within a semiconductor process chamber is provided. In one embodiment, the pedestal assembly generally includes a ceramic body, a metallic housing and a cooling plate. The ceramic body is coupled to the housing and is adapted to support the substrate. The cooling plate is disposed against the ceramic body. A conformal graphite interstitial layer disposed between the cooling plate and the ceramic body to provide enhanced thermal conductivity therebetween over a thermal operating range of the pedestal assembly. In another embodiment, a pedestal assembly generally includes a removable ceramic body disposed on a cover. A conformal graphite interstitial layer disposed in a vacuum environment surrounding the pedestal assembly between the ceramic body and the cover. Optionally, a second conformal graphite interstitial layer disposed in an internal volume of the pedestal assembly between the cooling plate and the cover.
摘要翻译：提供了一种用于在半导体处理室内支撑衬底的基座组件。在一个实施例中，基座组件通常包括陶瓷体，金属壳体和冷却板。陶瓷体联接到壳体并且适于支撑衬底。冷却板抵靠陶瓷体设置。布置在冷却板和陶瓷体之间的保形石墨间隙层，以在基座组件的热操作范围之间提供增强的导热性。在另一个实施例中，基座组件通常包括设置在盖上的可移除陶瓷体。安置在陶瓷体和盖之间的基座组件周围的真空环境中的保形石墨间隙层。可选地，设置在冷却板和盖之间的基座组件的内部容积中的第二共形石墨间隙层。

9. 发明申请

WO0206555A9 SPUTTERING TARGET 审中-公开
标题翻译：飞溅目标
公开(公告)号：WO0206555A9
公开(公告)日：2002-06-20
申请号：PCT/US0122763
申请日：2001-07-16
申请人： APPLIED MATERIALS INC
发明人： VAN GOGH JIM , THOMPSON JIM , SCHWEITZER MARC , TANAKA YOICHIRO , LIU ALAN , CHAN ANTHONY CT , BROWN KARL , FORSTER JOHN C
IPC分类号： C23C14/34 , C23C14/56 , H01L21/285 , H01J37/34
CPC分类号： H01J37/3423 , C23C14/3407 , C23C14/564
摘要： An apparatus for a physical vapor deposition system includes a target (208, 210) having a sidewall (212) having an undercut thereon defining a net erosion area and a net redeposition area.
摘要翻译：一种用于物理气相沉积系统的设备包括具有侧壁（212）的靶（208,210），所述侧壁具有限定净侵蚀区域和净再沉积区域的底切。

10. 发明申请

WO0201611A3 ELECTROSTATIC CHUCK AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：静电切割机及其制造方法
公开(公告)号：WO0201611A3
公开(公告)日：2002-05-23
申请号：PCT/US0119292
申请日：2001-06-15
申请人： APPLIED MATERIALS INC
发明人： BROWN KARL , SANSONI STEVEN , CROCKER STEVEN C
IPC分类号： H01L21/683 , H01L21/68
CPC分类号： H01L21/6833
摘要： Apparatus for protecting a substrate and a support surface of a substrate support chuck comprising a protective coating (100) of a diamond-like carbon-based material deposited upon the support surface. The protective coating may also contain silicon-based materials. The protective coating is deposited via plasma-enhanced CVD and is approximately in the range of 1 - 5 mu m thick. The apparatus may also have a wafer spacing mask (110) disposed upon the protective coating. A method of fabricating a substrate support chuck is also disclosed and comprises the steps of forming a chuck body having a support surface and depositing a carbon-based material over the support surface of said chuck body to form a protective coating (100). Optionally, a step of depositing a wafer spacing mask (110) upon the protective coating may be added. The protective coating results in a substantial decrease in contamination of chucks, wafers and the process chamber environment.
摘要翻译：用于保护基板支撑卡盘的基板和支撑表面的装置，其包括沉积在支撑表面上的类金刚石碳基材料的保护涂层（100）。保护涂层还可以含有硅基材料。保护涂层通过等离子体增强CVD沉积，其厚度约为1-5μm。该装置还可以具有设置在保护涂层上的晶片间隔掩模（110）。还公开了一种制造基板支撑卡盘的方法，包括以下步骤：形成具有支撑表面的卡盘主体并将碳基材料沉积在所述卡盘主体的支撑表面上以形成保护涂层（100）。可选地，可以添加在保护涂层上沉积晶片间隔掩模（110）的步骤。保护涂层导致卡盘，晶片和处理室环境污染的显着减少。

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