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1. 发明申请

WO0104937A3 METHOD AND APPARATUS FOR DIRECTING CONSTITUENTS THROUGH A PROCESSING CHAMBER 审中-公开
标题翻译：通过加工室指导构件的方法和装置
公开(公告)号：WO0104937A3
公开(公告)日：2001-07-12
申请号：PCT/US0040340
申请日：2000-07-10
申请人： APPLIED MATERIALS INC
发明人： HO HENRY , YU YING , CHEN STEVEN A
IPC分类号： H01L21/00
CPC分类号： H01L21/67017 , Y10S118/90
摘要： A method and apparatus for directing a process gas through a processing apparatus, such as a vapor deposition chamber. The apparatus comprises a pumping plate for a processing chamber having an annular body member wherein said body member has a first portion and a second defining a circumferential edge and a central opening. The first portion comprises a sidewall of the circumferential edge having a plurality of circumferentially spaced through holes and the second portion comprises a lateral portion that protrudes from the circumferential edge, such that, in a processing chamber, the first portion defines a first gas flow region comprising the central opening and a second gas flow region comprising the lateral portion of the second portion.
摘要翻译：一种用于将工艺气体引导通过诸如蒸镀室的处理装置的方法和装置。该装置包括用于处理室的泵板，其具有环形主体构件，其中所述本体构件具有第一部分，第二限定周向边缘和中心开口。第一部分包括圆周边缘的侧壁具有多个周向间隔开的通孔，第二部分包括从周向边缘突出的侧向部分，使得在处理室中，第一部分限定第一气体流动区域包括中心开口和包括第二部分的侧部的第二气流区域。

2. 发明申请

WO0201615A3 CRYSTAL STRUCTURE CONTROL OF POLYCRYSTALLINE SILICON IN A SINGLE WAFER CHAMBER 审中-公开
标题翻译：单晶硅中单晶硅的晶体结构控制
公开(公告)号：WO0201615A3
公开(公告)日：2002-04-04
申请号：PCT/US0120102
申请日：2001-06-22
申请人： APPLIED MATERIALS INC
发明人： WANG SHULIN , CHEN STEVEN A , LEE LUO , SANCHEZ ERROL
IPC分类号： H01L21/28 , C23C16/24 , H01L21/205 , H01L21/285 , H01L29/78 , C23C14/24
CPC分类号： C23C16/24 , H01L21/02381 , H01L21/02532 , H01L21/02609 , H01L21/0262
摘要： A method and apparatus for forming a polycrystalline silicon film. According to the present invention a process gas mix comprising a silicon source gas and a dilution gas mix is fed into a chamber wherein the dilution gas mix comprises H2 and an inert gas. A polycrystalline silicon film is then formed from the process gas mix.
摘要翻译：一种形成多晶硅膜的方法和装置。根据本发明，将包含硅源气体和稀释气体混合物的工艺气体混合物进料到室中，其中稀释气体混合物包含H 2和惰性气体。然后从工艺气体混合物形成多晶硅膜。

3. 发明申请

WO0104929A3 A METHOD OF FORMING A FILM IN A CHAMBER 审中-公开
标题翻译：一种形成室内薄膜的方法
公开(公告)号：WO0104929A3
公开(公告)日：2001-08-09
申请号：PCT/US0018829
申请日：2000-07-10
申请人： APPLIED MATERIALS INC
发明人： YANG MICHAEL X , HO HENRY , CHEN STEVEN A
IPC分类号： H01L21/00
CPC分类号： H01L21/67017
摘要： Methods and apparatuses of forming a film on a substrate including introducing a pretreatment material into a processing chamber sufficient to form a film as a portion of an inner surface of the processing chamber to inhibit outgassing from that portion of the chamber, introducing a substrate into the chamber, and forming a film on the substrate.
摘要翻译：在基板上形成膜的方法和装置，包括将预处理材料引入到足以形成膜作为处理室的内表面的一部分的处理室中，以阻止从该室的部分排气，将基板引入到并在衬底上形成膜。

4. 发明申请

WO0104376A9 A METHOD OF FORMING A SILICON NITRIDE LAYER ON A SEMICONDUCTOR WAFER 审中-公开
标题翻译：一种在半导体陶瓷上形成氮化硅层的方法
公开(公告)号：WO0104376A9
公开(公告)日：2002-08-15
申请号：PCT/US0040339
申请日：2000-07-10
申请人： APPLIED MATERIALS INC
发明人： YANG MICHAEL X , KAO CHIEN-TEH , LITTAU KARL , CHEN STEVEN A , HO HENRY , YU YING
IPC分类号： C23C16/42 , C23C16/34 , C23C16/44 , H01L21/31 , H01L21/318
CPC分类号： C23C16/4412 , C23C16/345
摘要： The invention provides methods and apparatuses of forming a silicon nitride layer on a semiconductor wafer. A semicondutor wafer is located on a susceptor within a semiconductor processing chamber. A carrier gas, a nitrogen source gas, and a silicon source gas are introduced into the semiconductor processing chamber and a semiconductor wafer is exposed to the mixture of gases at a pressure in the chamber in the range of approximately 100 to 500 Torr.
摘要翻译：本发明提供了在半导体晶片上形成氮化硅层的方法和装置。半导体晶片位于半导体处理室内的基座上。将载气，氮源气体和硅源气体引入到半导体处理室中，并且将半导体晶片在室内的压力下暴露于大约100至500托的范围内的气体混合物。

5. 发明申请

WO0208489A2 EMISSIVITY-CHANGE-FREE PUMPING PLATE KIT IN A SINGLE WAFER CHAMBER 审中-公开
标题翻译：在一个单一的卧室里的无噪音换尿布板
公开(公告)号：WO0208489A2
公开(公告)日：2002-01-31
申请号：PCT/US0122405
申请日：2001-07-17
申请人： APPLIED MATERIALS INC
发明人： LUO LEE , HO HENRY , WANG SHULIN , TRAN BINH HOA , TAM ALEXANDER , SANCHEZ ERROL A C , TAO XIANZHI , CHEN STEVEN A
IPC分类号： C23C16/44 , C23C16/455 , C23C16/46
CPC分类号： C23C16/45521 , C23C16/4401 , C23C16/4412 , C23C16/45591 , C23C16/46
摘要： Provided herein is an emissivity-change-free pumping plate kit used in a single wafer chamber. This kit comprises a top open pumping plate, and optionally a skirt and/or a second stage choking plate. The skirt may be installed around wafer heater, underneath wafer heater, or along chamber body inside the chamber. The choking plate is installed downstream of the top open pumping plate along the purge gas flow. Also provided is a method of preventing emissivity change and further providing optimal film thickness uniformity during wafer processing by utilizing such kit in the chamber.
摘要翻译：本文提供了在单个晶片室中使用的无发射率变化的泵浦板组件。该套件包括顶部开放抽吸板，以及任选的裙部和/或第二级阻塞板。裙子可以安装在晶片加热器周围，晶片加热器下面，或者沿着腔室内的腔室主体安装。扼流板沿着吹扫气流安装在顶部开放式泵板的下游。还提供了一种防止发射率变化的方法，并且在晶片加工期间通过在室中利用这种试剂盒进一步提供最佳的膜厚均匀性。

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