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1. 发明申请

WO2005098085A2 MULTI-STAGE CURING OF LOW K NANO-POROUS FILMS 审中-公开
标题翻译：低K纳米多孔膜的多段固化
公开(公告)号：WO2005098085A2
公开(公告)日：2005-10-20
申请号：PCT/US2005/010238
申请日：2005-03-24
申请人： APPLIED MATERIALS, INC. , SCHMITT, Francimar , ZHENG, Yi , YIM, Kang, Sub , AHN, Sang, H. , D'CRUZ, Lester, A. , HO, Dustin, W. , DEMOS, Alexandros, T. , XIA, Li-Qun , WITTY, Derek, R. , M'SAAD, Hichem
发明人： SCHMITT, Francimar , ZHENG, Yi , YIM, Kang, Sub , AHN, Sang, H. , D'CRUZ, Lester, A. , HO, Dustin, W. , DEMOS, Alexandros, T. , XIA, Li-Qun , WITTY, Derek, R. , M'SAAD, Hichem
IPC分类号： C23C16/40
CPC分类号： H01L21/76825 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02203 , H01L21/02208 , H01L21/02274 , H01L21/02304 , H01L21/02351 , H01L21/02362 , H01L21/3105 , H01L21/3121 , H01L21/31695 , H01L21/76811 , H01L21/76813 , H01L21/7682 , H01L2221/1047 , Y10T428/249978
摘要： Embodiments in accordance with the present invention relate to multi-stage curing processes for chemical vapor deposited low K materials. In certain embodiments, a combination of electron beam irradiation and thermal exposure steps may be employed to control selective outgassing of porogens incorporated into the film, resulting in the formation of nanopores. In accordance with one specific embodiment, a low K layer resulting from reaction between a silicon-containing component and a non-silicon containing component featuring labile groups, may be cured by the initial application of thermal energy, followed by the application of radiation in the form of an electron beam.
摘要翻译：根据本发明的实施例涉及用于化学气相沉积的低K材料的多阶段固化方法。在某些实施方案中，可以采用电子束照射和热暴露步骤的组合来控制掺入薄膜中的孔原子的选择性除气，从而形成纳米孔。根据一个具体实施方案，由含硅组分和含有不稳定基团的不含硅组分之间的反应产生的低K层可以通过初始施加热能来固化，随后在形式的电子束。

2. 发明申请

WO2005098925A1 TECHNIQUES PROMOTING ADHESION OF POROUS LOW K FILM TO UNDERLYING BARRIER LAYER 审中-公开
标题翻译：技术促进多孔低K膜粘合到相对较低的障碍层
公开(公告)号：WO2005098925A1
公开(公告)日：2005-10-20
申请号：PCT/US2005/009969
申请日：2005-03-24
申请人： APPLIED MATERIALS, INC. , SCHMITT, Francimar , DEMOS, Alexandros, T. , WITTY, Derek, R. , M'SAAD, Hichem , AHN, Sang, H. , D'CRUZ, Lester, A. , ELSHEREF, Khaled, A. , CUI, Zhenjiang
发明人： SCHMITT, Francimar , DEMOS, Alexandros, T. , WITTY, Derek, R. , M'SAAD, Hichem , AHN, Sang, H. , D'CRUZ, Lester, A. , ELSHEREF, Khaled, A. , CUI, Zhenjiang
IPC分类号： H01L21/316
CPC分类号： H01L21/31633 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02203 , H01L21/02274 , H01L21/02304 , H01L21/02351 , H01L21/02362 , H01L21/31058 , H01L21/31695 , H01L21/76801 , H01L21/76811 , H01L21/76813 , H01L21/7682 , H01L21/76825 , H01L21/76828 , H01L21/76832 , H01L2221/1047
摘要： Adhesion of a porous low K film to an underlying barrier layer is improved by forming an intermediate layer lower in carbon content, and richer in silicon oxide, than the overlying porous low K film. This adhesion layer can be formed utilizing one of a number of techniques, alone or in combination. In one approach, the adhesion layer can be formed by introduction of a rich oxidizing gas such as O2/CO2/etc. to oxidize Si precursors immediately prior to deposition of the low K material. In another approach, thermally labile chemicals such as alpha-terpinene, cymene, and any other non-oxygen containing organics are removed prior to low K film deposition. In yet another approach, the hardware or processing parameters, such as the manner of introduction of the non-silicon containing component, may be modified to enable formation of an oxide interface prior to low K film deposition. In still another approach, parameters of ebeam treatment such as dosage, energy, or the use of thermal annealing, may be controlled to remove carbon species at the interface between the barrier and the low K film. In a further approach, a pre-treatment plasma may be introduced prior to low k deposition to enhance heating of the barrier interface, such that a thin oxide interface is formed when low K deposition gases are introduced and the low K film is deposited.
摘要翻译：通过与上覆的多孔低K膜形成碳含量较低的中间层和富含氧化硅的多孔低K膜与下面的阻挡层的粘附性得到改善。可以利用单独或组合的多种技术之一形成该粘附层。在一种方法中，粘合层可以通过引入富氧化气体如O 2 / CO 2等形成。以在沉积低K材料之前立即氧化Si前体。在另一种方法中，在低K膜沉积之前，除去热不稳定化学品如α-萜品烯，伞花烃和任何其它不含氧的有机物。在另一种方法中，可以修改硬件或处理参数，例如引入非硅含量组分的方式，以使得能够在低K膜沉积之前形成氧化物界面。在另一种方法中，可以控制ebeam处理的参数，例如剂量，能量或使用热退火，以去除阻挡层和低K膜之间的界面处的碳物质。在另一种方法中，可以在低k沉积之前引入预处理等离子体以增强阻挡界面的加热，使得当引入低K沉积气体并沉积低K膜时，形成薄氧化物界面。

3. 发明申请

WO2003050853A2 A METHOD OF FORMING A SILICON NITRIDE LAYER ON A SUBSTRATE 审中-公开
标题翻译：在基底上形成硅氮化层的方法
公开(公告)号：WO2003050853A2
公开(公告)日：2003-06-19
申请号：PCT/US2002/039168
申请日：2002-12-05
申请人： APPLIED MATERIALS, INC.
发明人： CHEN, Steven, A. , TAO, Xianzhi , WANG, Shulin , LUO, Lee , HUANG, Kegang , AHN, Sang, H.
IPC分类号： H01L21/00
CPC分类号： C23C16/345 , H01L21/3185 , Y10S438/958
摘要： A silicon nutride layer is formed over transistor gates while the processing temperature is relatively high, typically at least 500°C, and the pressure is relatively high, typically at least 50 Torr, to obtain a relatively high rate of formation of the silicon nitride layer. Processing conditions are controlled so as to more uniformly form the silicon nitride layer. Generally, the radio of the NH 3 gas to the silicon-containing gas by volume is selected sufficiently high so that, should the surface have a low region between transistor gates which is less than 0.15 microns wide and have a height-to-width ratio of at least 1.0, as well as an entirely flat area of at least 5 microns by 5 microns, the layer forms at a rate of not more than 25% faster on the flat area than on a base of the low region.
摘要翻译：硅晶闸管层形成在晶体管栅极上，而处理温度相对较高，通常至少为500℃，压力相对较高，通常至少为50托，以获得较高的氮化硅层形成速率。控制处理条件以更均匀地形成氮化硅层。通常，将NH 3气体与体积含硅气体的无线电选择得足够高，使得如果表面在小于0.15微米宽的晶体管栅极之间具有低区域，并且具有高度 - 宽度比至少为1.0，以及至少为5微米×5微米的完全平坦的面积，该层在平坦区域上比在低区域的基底上以不超过25％的速率形成。

4. 发明申请

WO2004055881A1 NITROGEN-FREE DIELECTRIC ANTI-REFLECTIVE COATING AND HARDMASK 审中-公开
标题翻译：无氮电介质抗反射涂层和硬质合金
公开(公告)号：WO2004055881A1
公开(公告)日：2004-07-01
申请号：PCT/US2003/039270
申请日：2003-12-10
申请人： APPLIED MATERIALS, INC.
发明人： KIM, Bok, H. , RATHI, Sudah , AHN, Sang, H. , BENCHER, Christopher, D. , WANG, Yuxiang, M. , M'SAAD, Hichem , SILVETTI, Mario, D. , FUNG, Miguel, S. , JUNG, Kee Bum , ZHU, Lei
IPC分类号： H01L21/316
CPC分类号： H01L21/76828 , H01L21/02126 , H01L21/022 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/0234 , H01L21/0276 , H01L21/31144 , H01L21/31633 , H01L21/7681 , H01L21/76826
摘要： Methods are provided for depositing a dielectric material. The dielectric material may be used for an anti-reflective coating or as a hardmask. In one aspect, a method is provided for processing a substrate including introducing a processing gas comprising a silane-based compound and an oxygen and carbon containing compound to the processing chamber and reacting the processing gas to deposit a nitrogen-free dielectric material on the substrate. The dielectric material comprises silicon and oxygen. In another aspect, the dielectric material forms one or both layers in a dual layer anti-reflective coating.
摘要翻译：提供了沉积电介质材料的方法。电介质材料可用于抗反射涂层或硬掩模。一方面，提供了一种处理基板的方法，包括将包含硅烷类化合物和含氧和碳的化合物的处理气体引入处理室，并使处理气体在基板上沉积无氮介电材料。介电材料包括硅和氧。在另一方面，电介质材料在双层抗反射涂层中形成一层或两层。

5. 发明申请

WO2003050853A3 A METHOD OF FORMING A SILICON NITRIDE LAYER ON A SUBSTRATE 审中-公开
公开(公告)号：WO2003050853A3
公开(公告)日：2003-06-19
申请号：PCT/US2002/039168
申请日：2002-12-05
申请人： APPLIED MATERIALS, INC.
发明人： CHEN, Steven, A. , TAO, Xianzhi , WANG, Shulin , LUO, Lee , HUANG, Kegang , AHN, Sang, H.
IPC分类号： H01L21/318
摘要： A silicon nutride layer is formed over transistor gates while the processing temperature is relatively high, typically at least 500°C, and the pressure is relatively high, typically at least 50 Torr, to obtain a relatively high rate of formation of the silicon nitride layer. Processing conditions are controlled so as to more uniformly form the silicon nitride layer. Generally, the radio of the NH 3 gas to the silicon-containing gas by volume is selected sufficiently high so that, should the surface have a low region between transistor gates which is less than 0.15 microns wide and have a height-to-width ratio of at least 1.0, as well as an entirely flat area of at least 5 microns by 5 microns, the layer forms at a rate of not more than 25% faster on the flat area than on a base of the low region.

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