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1. 发明申请

WO2022066503A1 METHOD OF USING DUAL FREQUENCY RF POWER IN A PROCESS CHAMBER 审中-公开
公开(公告)号：WO2022066503A1
公开(公告)日：2022-03-31
申请号：PCT/US2021/050681
申请日：2021-09-16
申请人： APPLIED MATERIALS, INC.
发明人： SINGH, Anup Kumar , KUSTRA, Rick , HASSAN, Vinayak Vishwanath , KUMAR, Bhaskar , NITTALA, Krishna , MANNA, Pramit , ALAYAVALLI, Kaushik Comandoor , BALASUBRAMANIAN, Ganesh
IPC分类号： H01L21/02 , H01L21/033 , C23C16/26 , C23C16/44 , C23C16/505 , H01J37/32
摘要： Embodiments of the present disclosure generally relate to methods of depositing carbon film layers greater than 3,000 A in thickness over a substrate and surface of a lid of a chamber using dual frequency, top, sidewall and bottom sources. The method includes introducing a gas to a processing volume of a chamber. A first radiofrequency (RF) power is provided having a first frequency of about 40 MHz or greater to a lid of the chamber. A second RF power is provided having a second frequency to a bias electrode disposed in a substrate support within the processing volume. The second frequency is about 10 MHz to about 40 MHz. An additional third RF power is provided having lower frequency of about 400 kHz to about 2 MHz to the bias electrode.

2. 发明申请

WO2018187679A1 PLASMA DENSITY CONTROL ON SUBSTRATE EDGE 审中-公开
公开(公告)号：WO2018187679A1
公开(公告)日：2018-10-11
申请号：PCT/US2018/026441
申请日：2018-04-06
申请人： APPLIED MATERIALS, INC.
发明人： KUMAR, Bhaskar , KOTHNUR, Prashanth , BHATIA, Sidharth , SINGH, Anup Kumar , SHAH, Vivek Bharat , BALASUBRAMANIAN, Ganesh , WANG, Changgong
IPC分类号： H01L21/67 , H01L21/02 , H01L21/687 , H01L21/683
摘要： Implementations of the present disclosure generally relate to an apparatus for reducing particle contamination on substrates in a plasma processing chamber. The apparatus for reduced particle contamination includes a chamber body, a lid coupled to the chamber body. The chamber body and the lid define a processing volume therebetween. The apparatus also includes a substrate support disposed in the processing volume and an edge ring. The edge ring includes an inner lip disposed over a substrate, a top surface connected to the inner lip, a bottom surface opposite the top surface and extending radially outward from the substrate support, and an inner step between the bottom surface and the inner lip. To avoid depositing the particles on the substrate being processed when the plasma is de-energized, the edge ring shifts the high plasma density zone away from the edge area of the substrate.

3. 发明申请

WO2022119735A1 CARBON CVD DEPOSITION METHODS TO MITIGATE STRESS INDUCED DEFECTS 审中-公开
公开(公告)号：WO2022119735A1
公开(公告)日：2022-06-09
申请号：PCT/US2021/060280
申请日：2021-11-22
申请人： APPLIED MATERIALS, INC.
发明人： HASSAN, Vinayak Vishwanath , SINGH, Anup Kumar , KUMAR, Bhaskar
IPC分类号： C23C16/26 , C23C16/505 , C23C16/448
摘要： A method includes flowing a carbon-containing precursor and a carrier gas into a processing volume having a substrate positioned therein, generating a plasma in the processing volume by applying a first RF bias to a substrate support to deposit a first portion of carbon film onto the substrate, and terminating flow of the carbon-containing precursor while maintaining flow of the carrier gas to maintain the plasma within the processing volume. The method also includes flowing a nitrogen-containing gas into the processing volume and ionizing the nitrogen-containing gas in the presence of the plasma, exposing the substrate having the carbon film thereon to the ionized nitrogen- containing gas for a time period less than three seconds, and terminating flow of the nitrogen-containing gas while maintaining the plasma and reintroducing the carbon- containing precursor into the processing volume in the presence of the plasma to deposit a second portion of the carbon film.

4. 发明申请

WO2022086788A1 METHODS OF SEASONING PROCESS CHAMBERS 审中-公开
公开(公告)号：WO2022086788A1
公开(公告)日：2022-04-28
申请号：PCT/US2021/055029
申请日：2021-10-14
申请人： APPLIED MATERIALS, INC.
发明人： HASSAN, Vinayak Vishwanath , KUMAR, Bhaskar , SINGH, Anup Kumar
IPC分类号： C23C16/44 , C23C16/505 , H01J37/32 , C23C16/26 , C23C16/4404 , C23C16/4405 , H01J37/32082 , H01J37/32449 , H01J37/32522 , H01J37/32862
摘要： Embodiments of the present disclosure relate to semiconductor processing. More specifically, embodiments of the present disclosure relate to methods for seasoning one or more components of a process chamber. In at least one embodiment, a method for seasoning a process chamber includes depositing a seasoning film onto a component of the process chamber at a chamber pressure of about 4 mTorr to about 20 mTorr and a temperature below about 200 °C or about 200 °C to about 400 °C. The method includes depositing a deposition film onto the seasoning film. In at least one embodiment, a method includes introducing a nitrogen-containing gas to the seasoning film to form a nitrogen-treated seasoning film. Introducing the nitrogen-containing gas to the seasoning film is performed before depositing the deposition film onto the seasoning film.

5. 发明申请

WO2018187494A1 GAS PHASE PARTICLE REDUCTION IN PECVD CHAMBER 审中-公开
公开(公告)号：WO2018187494A1
公开(公告)日：2018-10-11
申请号：PCT/US2018/026117
申请日：2018-04-04
申请人： APPLIED MATERIALS, INC.
发明人： KUMAR, Bhaskar , BHATIA, Sidharth , SINGH, Anup Kumar , SHAH, Vivek Bharat , BALASUBRAMANIAN, Ganesh
IPC分类号： H01L21/02 , H01J37/32 , H05H1/46
CPC分类号： H01J37/32137 , C23C16/4401 , C23C16/503 , C23C16/505 , C23C16/52 , H01J37/32082 , H01J37/3244 , H01J37/32541 , H01J37/32568 , H01J2237/3321 , H01L21/02274 , H01L21/0262 , H01L21/28556
摘要： The present disclosure relates to methods and apparatus for reducing particle contamination on substrates in a plasma process chamber. In one embodiment, by applying a DC power to an electrode surrounding a processing region, the boundary of a plasma region formed in the processing region extends closer to the chamber body and outside of the diameter of the substrate support. In another embodiment, by applying a negative bias to an electrode or a positive bias to the lid, negatively charged species located at the boundary of the plasma region are lifted by the electrostatic force created by the negative bias or the positive bias. As a result, species located at the boundary of the plasma region will not fall onto the edge of the substrate disposed on the substrate support as the electric power for sustaining the plasma region is turned off, leading to reduced particle contamination on the substrate.

6. 发明申请

WO2022051079A1 SHOWERHEAD DESIGN TO CONTROL STRAY DEPOSITION 审中-公开
公开(公告)号：WO2022051079A1
公开(公告)日：2022-03-10
申请号：PCT/US2021/046114
申请日：2021-08-16
申请人： APPLIED MATERIALS, INC.
发明人： DHANAKSHIRUR, Akshay , ROCHA-ALVAREZ, Juan Carlos , ALAYAVALLI, Kaushik Comandoor , PINSON, Jay D., II , KUSTRA, Rick , RAMAMURTHI, Badri N. , SINGH, Anup Kumar , BALASUBRAMANIAN, Ganesh , KUMAR, Bhaskar , HASSAN, Vinayak Vishwanath , LAI, Canfeng , BERA, Kallol , GANTA, Sathya Swaroop
IPC分类号： C23C16/455 , C23C16/44 , C23C16/505
摘要： A lid for a process chamber includes a plate having a first surface and a second surface opposite the first surface. The first surface has a recess and a seal groove formed in the first surface and surrounding the recess. The lid further includes an array of holes extending from the recess to the second surface.

7. 发明申请

WO2019139809A1 TECHNIQUES TO IMPROVE ADHESION AND DEFECTS FOR TUNGSTEN CARBIDE FILM 审中-公开
公开(公告)号：WO2019139809A1
公开(公告)日：2019-07-18
申请号：PCT/US2019/012143
申请日：2019-01-03
申请人： APPLIED MATERIALS, INC.
发明人： SHAH, Vivek Bharat , SINGH, Anup Kumar , KUMAR, Bhaskar , BALASUBRAMANIAN, Ganesh
IPC分类号： H01L21/02 , H01L21/285 , H01L21/033
摘要： Implementations of the present disclosure generally relate to hardmask films and methods for depositing hardmask films. More particularly, implementations of the present disclosure generally relate to tungsten carbide hardmask films and processes for depositing tungsten carbide hardmask films. In one implementation, a method of forming a tungsten carbide film is provided. The method comprises forming a tungsten carbide initiation layer on a silicon-containing surface of a substrate at a first deposition rate. The method further comprises forming a tungsten carbide film on the tungsten carbide initiation layer at a second deposition rate, wherein the second deposition rate is greater than the first deposition rate.

8. 发明申请

WO2018026509A1 ALUMINUM FLUORIDE MITIGATION BY PLASMA TREATMENT 审中-公开
标题翻译：氟化铝减蚀等离子体处理
公开(公告)号：WO2018026509A1
公开(公告)日：2018-02-08
申请号：PCT/US2017/042621
申请日：2017-07-18
申请人： APPLIED MATERIALS, INC.
发明人： SHAH, Vivek Bharat , SINGH, Anup Kumar , KUMAR, Bhaskar , BALASUBRAMANIAN, Ganesh , KIM, Bok Hoen
IPC分类号： H01L21/02 , H01J37/32
摘要： Implementations described herein generally relate to methods and apparatus for in-situ removal of unwanted deposition buildup from one or more interior surfaces of a semiconductor substrate-processing chamber. In one implementation, the method comprises forming a reactive fluorine species from a fluorine-containing cleaning gas mixture. The method further comprises delivering the reactive fluorine species into a processing volume of a substrate-processing chamber. The processing volume includes one or more aluminum-containing interior surfaces having unwanted deposits formed thereon. The method further comprises permitting the reactive fluorine species to react with the unwanted deposits and aluminum-containing interior surfaces of the substrate-processing chamber to form aluminum fluoride. The method further comprises exposing nitrogen-containing cleaning gas mixture to in-situ plasma to form reactive nitrogen species in the processing volume. The method further comprises permitting the reactive nitrogen species to react with the ammonium fluoride to convert the aluminum fluoride to aluminum nitride.
摘要翻译：这里描述的实施方式一般涉及用于从半导体衬底处理室的一个或多个内表面原位去除不希望的沉积物堆积的方法和设备。在一个实施方式中，该方法包括由含氟清洁气体混合物形成反应性氟物质。该方法还包括将反应性氟物质输送到衬底处理室的处理体积中。处理体积包括一个或多个含铝内表面，其上形成有不需要的沉积物。该方法还包括允许反应性氟物质与衬底处理室的不需要的沉积物和含铝内表面反应以形成氟化铝。该方法还包括将含氮清洁气体混合物暴露于原位等离子体中以在处理体积中形成反应性氮物质。该方法还包括允许反应性氮物种与氟化铵反应以将氟化铝转化为氮化铝。

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